Publication

2017

Original paper

[1] Eun Sung Kim, Jae-Yeol Hwang, Kyu Hyoung Lee, Hiromichi Ohta, Young Hee Lee, and Sung Wng Kim, “Graphene Substrate for Van der Waals Epitaxy of Layer Structured Bismuth Antimony Telluride Thermoelectric Film”, Adv. Mater. 29, 1604899 (2017). (DOI: 10.1002/adma.201604899).

[2] Kazuma Funahashi, Naoki Tanaka, Yoshiaki Shoji, Naoki Imazu, Ko Nakayama, Kaito Kanahashi, Hiroyuki Shirae, Suguru Noda, Hiromichi Ohta, Takanori Fukushima, and Taishi Takenobu, “Remarkably air- and moisture-stable hole-doped carbon nanotube films by a boron-based oxidant”, Appl. Phys. Express 10, 035101 (2017). (DOI:10.7567/APEX.10.035101).

[3] Shota Katayama, Takayoshi Katase, Tetsuya Tohei, Bin Feng, Yuichi Ikuhara, and Hiromichi Ohta, “Reactive solid-phase epitaxy and electrical conductivity of layered sodium manganese oxide films”, Cryst. Growth Des. 17, 1849-1853 (2017).(doi: 10.1021/acs.cgd.6b01810)

[4] Takayoshi Katase, Kenji Endo, and Hiromichi Ohta, “Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate”, APL Mater. 5, 056105 (2017). (doi: 10.1061/1.4983276)

[5] Yuqiao Zhang, Bin Feng, Hiroyuki Hayashi, Tetsuya Tohei, Isao Tanaka, Yuichi Ikuhara, and Hiromichi Ohta, “Thermoelectric phase diagram of the SrTiO3-SrNbO3 solid solution system”, J. Appl. Phys. 121, 185102-1-7(2017). (doi: 10.10631/1.4983359)

[6] Amit Khare, Dongwon Shin, Taesup Yoo, Minu Kim, Tae Dong Kang, Jaekwang Lee, Seulki Roh, Jungseek Hwang, Sung Wng Kim, Tae Won Noh, Hiromichi Ohta, and Woo Seok Choi, “Topotactic Metal-Insulator Transition in Epitaxial SrFeOx Thin Films”, Adv. Mater. 29, 1606566 (2017). (DOI: 10.1002/adma.201606566)

[7] A.V. Sanchela, T. Onozato, B. Feng, Y. Ikuhara, and H. Ohta, “Thermopower modulation clarification of the intrinsic effective mass in a transparent oxide semiconductor, BaSnO3“, Phys. Rev. Materials 1, 034603 (2017). (DOI: 10.1103/PhysRevMaterials.1.034603)

[8] Shao-Pin Chiu, Michihiko Yamanouchi, Tatsuro Oyamada, Hiromichi Ohta, and Juhn-Jong Lin, “Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La2/3Sr1/3MnO3 thin film”, Phys. Rev. B 96, 085143 (2017). (DOI: 10.1103/PhysRevB.96.085143)

[9] Jae-Yeol Hwang, Young-Min Kim, Kyu Hyoung Lee, Hiromichi Ohta, Sung Wng Kim, “Te monolayer-driven spontaneous van der Waals epitaxy of two-dimensional pnictogen chalcogenide film on sapphire”, Nano Lett. Article ASAP (DOI: 10.1021/acs.nanolett.7b02737)

[10] Takayoshi Katase, Yuki Suzuki , Hiromichi Ohta, “Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device”, J. Appl. Phys. in press

[11] Yukio Nezu, Yu-Qiao Zhang, Chunlin Chen, Yuichi Ikuhara, and Hiromichi Ohta, “Solid-phase epitaxial film growth and optical properties of a ferroelectric oxide, Sr2Nb2O7“, J. Appl. Phys. in press

Pre-print

[1] Yuqiao Zhang, Bin Feng, Hiroyuki Hayashi, Tetsuya Tohei, Isao Tanaka, Yuichi Ikuhara, and Hiromichi Ohta, “Thermoelectric phase diagram of the SrTiO3-SrNbO3 solid solution system”, arXiv:1704.03613.

[2] Anup V. Sanchela, Takaki Onozato, Bin Feng, Yuichi Ikuhara, and Hiromichi Ohta, “Thermopower modulation clarification of the intrinsic effective mass in a transparent oxide semiconductor, BaSnO3“, arXiv:1704.03653.

[3] Michihiko Yamanouchi, Tatsuro Oyamada, Takayoshi Katase, and Hiromichi Ohta, “Current-induced effective magnetic field in a half-metallic oxide La0.67Sr0.33MnO3“, arXiv:1704.05989.

[4] Takayoshi Katase, Kenji Endo, and Hiromichi Ohta, “Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate”, arXiv:1705.00130.

 

Book

[1] Hiromichi Ohta, Chapter 4.3 Thermoelectrics in “Metal Oxide-Based Thin Film Structures (1st Edition) Formation, Characterization and Application of Interface-based Phenomena”, Ed. Nini Pryds, Vicenzo Esposito (ISBN 9780128111666), ELSEVIER (to be published September 2017)

Review

[1] Takayoshi Katase and Hiromichi Ohta, “Transition-metal-oxide based functional thin-film device using leakage-free electrolyte”, J. Ceram. Soc. Jpn. 125, 608-615 (2017). The 71st CerSJ Awards for Advancements in Ceramic Science and Technology (Dr. Katase): Review

Invited talk

[1] H. Ohta, “Thermoelectric Seebeck effect of two dimensional electron gas in SrTiO3“, International conference on Advances in Functional Materials, Anna University, Chennai, India, 6-8 January, 2017 (Invited)

[2] H. Ohta, “Electrochemical function modulation of oxides using three-terminal thin film transistor structure with water infiltrated insulator”, The 3rd Functional Oxide Thin Films for Advanced Energy and Information Technology, Sheraton Roma, Roma, Italy, 5-8 July, 2017 (Invited)

[3] H. Ohta, “Electric Field Modulation of Thermopower in Two-dimensional Electron Gas”, IUMRS-ICAM (The 15th International Conference on Advanced Materials), Yoshida Campus, Kyoto University, Kyoto, Japan, 27 August-1 September, 2017 (Invited)

[4] Hiromichi Ohta, “Epitaxial film growth and some applications of functional oxides”, Distinguished Lecture Series at Materials Science & Engineering, University of Toronto, Toronto (Canada), 3rd October, 2017 (Invited)

[5] Hiromichi Ohta and Yu-Qiao Zhang, “Double enhancement of thermoelectric power factor in oxide two-dimensional electron system via precise dimensionality control”, 2017 Fall Korean Physical Society (KPS) Meeting, Gyeongju, Korea, 25-27 October, 2017 (Invited)

[6] Takayoshi Katase and Hiromichi Ohta, “Room-temperature-protonation-driven optoelectronic device with water-gated thin-film-transistor structure”, the 8th International Conference and Exhibition on Lasers, Optics & Photonics, Las Vegas, USA, 15-17 November, 2017 (Invited)

[7] H. Ohta and A. Sanchela, “Thermopower of oxide heterostructure”, ICAMD2017 (The 11th International Conference on Advanced Materials and Devices), Jeju, Korea, 5-8 December, 2017 (Invited)

Contributed talk

[1] Kaito Kanahashi, Jiang Pu, Nguyen Thanh Cuong, Chang-Hsiao Chen, Lain-Jong Li, Susumu Okada, Hiromichi Ohta, Shinya Takaishi and Taishi Takenobu, “Thermoelectric Properties in Two-Dimensional Transition Metal Dichalcogenide Monolayers and One-Dimensional Metal Complexes”, 3rd International Symposium on π-System Figuration, Nagoya University, Nagoya, 27th-28th Jan. 2017

Award

[1] The 71st CerSJ Awards for advancements in ceramic science and technology, Takayoshi Katase, “Development of functional thin film devices utilizing Redox of transition metal oxides”

Other

[1] Hiromichi Ohta, “The switch that could double USB memory”,  Spotlight on Research (2016-2017 Hokkaido University)17-18 (2017). PDF

2016

Original paper

[1] B. Feng, I. Sugiyama, H. Hojo, H. Ohta, N. Shibata, and Y. Ikuhara, “Atomic structures and oxygen dynamics of CeO2 grain boundaries”, Sci. Rep. 6, 20288 (2016).(doi:10.1038/srep20288)

[2] Katase, Y. Suzuki, and H. Ohta, “Reversibly switchable electromagnetic device with leakage-free electrolyte”, Adv. Electron. Mater. (2016.3.29 online).(doi:10.1002/aelm.201600044) (Cond-mat arXiv) (Press release)

[3] T. Onozato, T. Katase, A. Yamamoto, S. Katayama, K. Matsushima, N. Itagaki, H. Yoshida, and H. Ohta, “Optoelectronic properties of valence-state-controlled amorphous niobium oxide”, J. Phys. Condens. Mater. 28, 255001 (2016).(doi:10.1088/0953-8984/28/25/255001)

[4] T. Katase, T. Onozato, M. Hirono, T. Mizuno, and H. Ohta, “A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry”, Sci. Rep. 6, 25819 (2016). (doi:10.1038/srep25819)

[5] K. Yokoyama, S. Yokoyama, Y. Sato, K. Hirano, S. Hashiguchi, K. Motomiya, H. Ohta, H. Takahashi, K. Tohji, and Y. Sato, “Efficiency and long-term durability of nitrogen-doped single-walled carbon nanotube electrocatalyst synthesized by defluorination-assisted nanotube-substitution for oxygen reduction reaction”, J. Mater. Chem. A (in press).(doi:10.1039/C6TA02722A )

[6] Jiang Pu, Kaito Kanahashi, Nguyen Thanh Cuong, Chang-Hsiao Chen, Lain-Jong Li, Susumu Okada, Hiromichi Ohta, and Taishi Takenobu, “Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers”, Phys. Rev. B 94, 014312 (2016). (doi:10.1103/PhysRevB.94.014312).

[7] Ning Li, Takayoshi Katase, Yanbei Zhu, Takao Matsumoto, Tomonari Umemura, Yuichi Ikuhara, and Hiromichi Ohta, “Solid-liquid phase epitaxial growth of Li4Ti5O12 thin film”, Appl. Phys. Express 9, 125501 (2016).(doi:10.7567/APEX.9.125501)

Proceeding

[1] Katase, K. Endo, and H. Ohta, “Electrolysis-induced protonation of VO2 thin film transistor for the metal-insulator phase modulation”, Proc. SPIE 9749, Oxide-based Materials and Devices VII, 974916, 974916 (2016).(doi:10.1117/12.2222255)

Invited talk

[1] H. Ohta and T. Katase, “Electro-chemical redox switching of functional oxide thin films using water-infiltrated nanoporous glass”, International Workshop on Oxide Surfaces (IWOX-X), Dalian / Liaoyang, China, 10-15 January, 2016 (Invited)

[2] T. Katase and H. Ohta, “All-Solid-State Electro-Magnetic Phase Switching Device Operating at Room Temperature”, Energy Materials Nanotechnology (EMN) Meeting on Ceramics, Hong Kong, China, 25-28 January, 2016 (Invited)

[3] T. Katase and H. Ohta, “Reversible switching of optoelectric and electromagnetic properties of functional oxides using water-infiltrated glass”, Oxide-based Materials and Devices VII, San Francisco, USA, 13-18 February, 2016 (Invited)

[4] T. Katase and H. Ohta, “Electrochemically switchable electromagnetic device with water electrolysis”, Mini-workshop on oxides and related materials, Tohoku University, Sendai, Japan, 24-25 February, 2016 (Invited)

[5] T. Katase and H. Ohta, “Reversibly tunable opto-electronic and electro-magnetic device of transition metal oxides using water-infiltrated glass”, Seminar at Institute of Physics, Academia Sinica (hosted by Dr. Wei-Li Lee), Academia Sinica, Taiwan, 27 July, 2016 (Invited)

[6] T. Katase, Y. Suzuki, and H. Ohta, “Reversible switching from an insulator to a conducting magnet-New way toward high capacity memory device-“, International Research School: Electronic States and Phases Induced by Electric or Optical Impacts (IMPACT 2016), Cargese, France, 23 Aug.-2 Sep., 2016 (Invited)

[7] T. Katase and H. Ohta, “Optoelectronic and electromagnetic switching device with transition metal oxides using water-leakage-free electrolyte”, Seminar at Soochow University (hosted by Prof. Steffen Duhm), Suzhou, China, 10 October, 2016 (Invited)

[8] H. Ohta and W. S. Choi, “Unusually large thermopower of nanostructured oxides”, ENGE 2016 (International Conference on Electronic Materials and Nanotechnology for Green Environment), Ramada Plaza Jeju Hotel, Jeju, South Korea, Nov. 6-9, 2016 (Invited)

Contributed talk

[1] Michihiko Yamanouchi, Tatsuro Oyamada, Takayoshi Katase, Hiromichi Ohta, “Current dependence of switching magnetic field in La0.67Sr0.33MnO3/SrTiO3“, HOKUDAI-NCTU International Joint Symposium on Nano, Opto and Bio Sciences, Hokkaido University, Sapporo, Japan, 4-5 Oct. 2016 (poster)

[2] Yuqiao Zhang, Takaki Onozato, Takayoshi Katase, Hiromichi Ohta, “Electron transport properties of SrTiO3-SrNbO3 full range solid solutions”, HOKUDAI-NCTU International Joint Symposium on Nano, Opto and Bio Sciences, Hokkaido University, Sapporo, Japan, 4-5 Oct. 2016 (poster)

[3] Takaki Onozato, Takayoshi Katase, Tetsuya Tohei, Yuichi Ikuhara, Hiromichi Ohta, “Anomalous thermopower of ultrathin LaTiO3 epitaxial layers”, HOKUDAI-NCTU International Joint Symposium on Nano, Opto and Bio Sciences, Hokkaido University, Sapporo, Japan, 4-5 Oct. 2016 (poster)

[4] Yuki Suzuki, Takayoshi Katase, Hiromichi Ohta, “Leakage-free alkaline electrolyte: Amorphous NaTaO3 nanopillar array”, HOKUDAI-NCTU International Joint Symposium on Nano, Opto and Bio Sciences, Hokkaido University, Sapporo, Japan, 4-5 Oct. 2016 (poster)

[5] Hiromichi Ohta, Shota Kaneki, Tamotsu Hashizume, “Verification of 2D enhanced thermopower theory by electric field thermopower modulation”, HOKUDAI-NCTU International Joint Symposium on Nano, Opto and Bio Sciences, Hokkaido University, Sapporo, Japan, 4-5 Oct. 2016 (poster)

[6] Y. Zhang, T. Onozato, T. Katase, and H. Ohta, “Thermoelectric properties of SrTiO3-SrNbO3 full range solid solutions”, International Workshop on Oxide Electronics 23, Nanjing International Conference Hotel, Nanjing, China, 12-14 Oct. 2016

[7] T. Onozato, T. Katase, T. Tohei, Y. Ikuhara, and H. Ohta, “Anomalous thermopower of ultrathin LaTiO3 epitaxial layers”, International Workshop on Oxide Electronics 23, Nanjing International Conference Hotel, Nanjing, China, 12-14 Oct. 2016

[8] Y. Suzuki, T. Katase, and H. Ohta, “Leakage-free alkaline electrolyte: Amorphous NaTaO3 nanopillar array”, International Workshop on Oxide Electronics 23, Nanjing International Conference Hotel, Nanjing, China, 12-14 Oct. 2016

[9] T. Katase, Y. Suzuki, and H. Ohta, “Reversible switching from an insulator to a conducting magnet – New way toward high capacity memory device-“, International Workshop on Oxide Electronics 23, Nanjing International Conference Hotel, Nanjing, China, 12-14 Oct. 2016 Best poster award

[10] M. Yamanouchi, T. Oyamada, T. Katase and H. Ohta, “Current-induced modulation of switching magnetic field in La0.67Sr0.33MnO3/SrTiO3 structures”, 61st Annual Conference on Magnetism and Magnetic Materials (2016 MMM Conference), New Orleans, USA, Oct. 31-Nov. 4, 2016

[11] T. Katase, T. Onozato, Y. Suzuki, K. Endo, M. Hirono, T. Mizuno, T. Tohei, Y. Ikuhara, and H. Ohta, “Water-gated thin film transistors on functional oxides – Toward multifunctional memory devices –”, 2016 MRS Fall Meeting & Exhibit, Boston, MA, USA, 27 Nov.-2 Dec. 2016

[12] K. Yokoyama, S. Yokoyama, Y. Sato, K. Hirano, S. Hashiguchi, K. Motomiya, H. Ohta, H. Takahashi, K. Tohji, and Y. Sato, “Oxygen reduction reaction of nitrogen-doped single-walled carbon nanotubes synthesized by defluorination”, 2016 MRS Fall Meeting & Exhibit, Boston, MA, USA, 27 Nov.-2 Dec. 2016

[13] M. Yamanouchi, T. Oyamada, T. Katase, and H. Ohta, “Current-induced effects on switching magnetic field in an oxide half-metal heterostructure”, Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-21, Hokkaido University, Sapporo, Japan, 12-13 Dec. 2016

[14] T. Onozato, T. Katase, M. Hirono, T. Mizuno, and H. Ohta, “Amorphous WO3 electrochromic device with thin-film transistor electrode geometry”, The 17th RIES-Hokudai International Symposium 柔 [Ju], Chateraise Gateaux Kingdom Sapporo, Sapporo, Japan, 13-14 Dec. 2016 (poster) Poster Award

[15] K. Nakamura, T. Katase, T. Oshikiri, K. Ueno, H. Ohta, and H. Misawa, “Switchable photocurrent polarity of plasmonic photoelectric conversion by irradiation wavelengths”, The 17th RIES-Hokudai International Symposium 柔 [Ju], Chateraise Gateaux Kingdom Sapporo, Sapporo, Japan, 13-14 Dec. 2016 (poster)

[16] Y. Zhang, T. Katase, T. Onozato, B. Feng, H. Hayashi, T. Tohei, I. Tanaka, Y. Ikuhara, and H. Ohta, “Thermoelectric properties of SrTiO3-SrNbO3 full range solid solutions”, The 17th RIES-Hokudai International Symposium 柔 [Ju], Chateraise Gateaux Kingdom Sapporo, Sapporo, Japan, 13-14 Dec. 2016 (poster)

[17] A. V. Sanchela and H. Ohta, “Thermoelectric properties of Nb-doped BaSnO3 thin film”, The 17th RIES-Hokudai International Symposium 柔 [Ju], Chateraise Gateaux Kingdom Sapporo, Sapporo, Japan, 13-14 Dec. 2016 (poster)

[18] Y. Suzuki, T. Katase, and H. Ohta, “Characterization of amorphous NaTaO3 nanopillar array film”, The 17th RIES-Hokudai International Symposium 柔 [Ju], Chateraise Gateaux Kingdom Sapporo, Sapporo, Japan, 13-14 Dec. 2016 (poster)

News

[1] “The switch that could double USB memory”, Phys.org, 24 June, 2016

[2] “The switch that could double USB memory”, Science Daily, June 24, 2016

[3] “Magnetic switch holds promise for double capacity solid state storage”, gizmag, June 28, 2016

[4] “Magnetic switch holds promise for double capacity solid state storage”, truemag, 28 June, 2016

[5] “The switch that could double USB memory”, new electronics, 1 July, 2016

[6] “Switching States To Deliver Double USB Memory”, Crazy Engineers, July 2, 2016

[7] “The switch that could double USB memory”, News Dog, July 2, 2016

[8] “A New Method to Double USB Memory”, Iscanews, July 2, 2016

[9] “The Switch That Could Double USB Memory”, Science Newsline Technology, 2 July, 2016

[10] “The Switch That Could Double USB Memory”, Technobahn, 2 July, 2016

[11] “The switch that could double USB memory”, RtoZ.org, July 3, 2016 Youtube

[12] “The switch that could double USB memory”, Space Daily, 6 July 2016

[13] “Hitting The Magnetic Switches”, Tom’s Hardware, July 9, 2016

[14] “New Device Could Double USB Storage Capacity”, Electronics 360, 11 July, 2016

[15] “磁電雙穩態材料倍增儲存容量”, EET Taiwan, 12 July, 2016

[15] “Double memory storage with magnetic and electric signals”, COSMOS Magazine, 12 July, 2016

Patent

[1] United States Patent US2015/0148218 A1, “Strontium Cobaltite Oxygen Sponge Catalyst and Methods of USE”, Published May 28, 2015, HoNyung Lee (Oak Ridge, US), Hyoungjeen Jeen (Knoxville, KR), Woo Seok Choi (Suwon, KR), Michael Biegalski (Oak Ridge, US), Chad M. Folkman (San Jose, US), I-Cheng Tung (Chicago, US), Dillon D. Fong (Elmhurst, US), John W. Freeland (Oak Park, US), Dongwon Shin (Knoxville, KR), Hiromichi Ohta (Kita, JP), Matthew F. Chisholm (Oak Ridge, US)

Award

[1] Best poster award, T. Katase, Y. Suzuki, and H. Ohta, “Reversible switching from an insulator to a conducting magnet – New way toward high capacity memory device-“, International Workshop on Oxide Electronics 23, Nanjing International Conference Hotel, Nanjing, China, 12-14 Oct. 2016 (poster)

[2] Poster Award, T. Onozato, T. Katase, M. Hirono, T. Mizuno, and H. Ohta, “Amorphous WO3 electrochromic device with thin-film transistor electrode geometry”, The 17th RIES-Hokudai International Symposium [Ju], Chateraise Gateaux Kingdom Sapporo, Sapporo, Japan, 13-14 Dec. 2016

2015

Original paper

[1] W. S. Choi, H. K. Yoo, and H. Ohta, “Polaron transport and thermoelectric behavior in La-doped SrTiO3 thin films with elemental vacancies”,Adv. Funct. Mater. 25, 799-804 (2015).(DOI: 10.1002/adfm.201403023)

[2] T. Katase, K. Endo, and H. Ohta, “Characterization of electronic structure around metal-insulator transition in V1-xWxO2 thin films by thermopower measurement “, J. Ceram. Soc. Jpn. 123, 307-311 (2015).(DOI: 10.2109/jcersj2.123.P5-1)

[3] T. Katase, K. Endo, T. Tohei, Y. Ikuhara, and H. Ohta, “Room-temperature-protonation-driven on-demand metal-insulator conversion of a transition metal oxide”, Adv. Electron. Mater.1, 1500063 (2015).(DOI: 10.1002/aelm.201500063)

[4] T. Katase, K. Endo, and H. Ohta, “Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion”, Phys. Rev. B 92, 035302 (2015).(DOI: 10.1103/PhysRevB.92.035302)

[5] K. Yokoyama, Y. Sato, K. Hirano, H. Ohta, M. Kenichi, K. Tohji, Y. Sato, “Defluorination-assisted nanotube-substitution reaction with ammonia gas for synthesis of nitrogen-doped single-walled carbon nanotubes”, Carbon 94, 1052-1060 (2015).(DOI:10.1016/j.carbon.2015.07.090) 

[6] T. Katase, H. Takahashi, T. Tohei, Y. Suzuki, M. Yamanouchi, Y. Ikuhara, I. Terasaki, and H. Ohta, “Solid-phase epitaxial growth of A-site-ordered perovskite Sr4-xErxCo4O12-d: A room temperature ferrimagnetic p-type semiconductor”, Adv. Electron. Mater. 1, 1500199 (2015).(DOI: 10.1002/aelm.201500199)

Review

[1] I. Terasaki, R. Okazaki, and H. Ohta, “Search for non-equilibrium thermoelectrics”, Scripta Materialia 111, 23–28 (2016). (DOI:10.1016/j.scriptamat.2015.04.033)

Invited talk

[1] H. Ohta, “Thermopower enhancement of two-dimensional electron gas in oxide semiconductors”, The American Ceramic Society’s Electronic Materials and Applications 2015 (EMA2015), Orlando, Florida USA, 21-23 January, 2015 (Invited)

[2] H. Ohta, “Thermoelectric effect of extremely thin electron doped SrTiO3“, The 1st IOP-RIES Joint Workshop, Hokkaido Univ.,23 March, 2015 (Invited)

[3] T. Katase, H. Ohta, “Electro-magnetic properties control of functional oxides by pseudo solid-state electrochemistry”, 2015 EMN Qingdao Meeting, Qingdao, China, 14-17 June, 2015 (Invited)

[4] H. Ohta, “Two-dimensional giant thermopower –SrTiO3-based superlattices and transistors-“, The American Ceramic Society’s 11th International Conference on Ceramic Materials and Components for Energy and Environmental Applications (CMCEE-11), Vancouver, Canada, 14-19 June, 2015 (Invited)

[5] H. Ohta, “Development of oxide-based nanostructured thermoelectric materials”, 4th International Symposium on Energy Challenges and Mechanics -working on small scales”, Scotland, UK, 11-13 August, 2015 (Invited, Keynote)

[6] Hiromichi Ohta, “Epitaxial film growth and characterization of functional oxides”, Seminar talk (60 min), National Chiao Tung University, Taiwan, 1 October, 2015 (Invited)

[7] H. Ohta,T. Katase, “Water electrolysis induced modification of functional oxides−Thermoelectric properties−”, IUMRS-ICAM 2015, Jeju island, Korea, 25-29 October, 2015 (Invited)

Contributed talk

[1] Kaito Kanahashi, Jiang Pu, Nguyen Thanh Cuoug, Lain-Jong Li, Susumu Okada, Hiromichi Ohta, Taishi Takenobu, “Thermoelectric properties of CVD-grown transition metal dichalcogenide monolayers”, NT15 The Sixteenth International Conference on the Science and Application of Nanotubes, Nagoya University, Nagoya, Japan, 29 June-3 July, 2015 (poster)

[2] Ya-Nan Wu, Misako Hirono, Takayoshi Katase, Hiromichi Ohta, and Juhn-Jong Lin, “Thermoelectric and transport properties of epitaxial ITO and In2O3 films”, Workshop on Renewable Energies – Thermoelectrics and Photovoltaics -, Academia Sinica, Taipei, Taiwan,27-28 August, 2015 (poster)

[3] T. Katase, Y. Suzuki, H. Ohta, “Room-temperature-operatable electro-magnetic phase switching device”, Workshop on Oxide Electronics 22, College de France, Paris, 7-9 October, 2015 (oral)

[4] T. Katase, Y. Suzuki, and H. Ohta, “All-solid-state non-volatile electro-magnetic phase switching device”, STAC-9 & TOEO-9, Epocal Rsukuba, Ibaraki, Japan, 19-21 October, 2015 (oral)

[5] M. Yamanouchi, A. Sakagami, K. Takoshima, N. Kumashiro, T. Katase, and H. Ohta, “Domain wall motion devices using ferromagnetic oxides”, 2015 CRL Forum International, Tokyo Institute Technology,Tokyo,19-20 Ocotber, 2015 (poster)

[6] S. Katayama, T. Katase, and H. Ohta, “Reactive solid-phase epitaxial growth of layered alkali transition metal oxide, NaxMnO2“, THE 16th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “術” [JUTSU] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 10-11 November, 2015 (poster)

[7] Y. Suzuki, T. Katase, and H. Ohta, “All-solid-state non-volatile electromagnetic phase switching device”, THE 16th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “術” [JUTSU] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 10-11 November, 2015 (poster) Poster Award

[8] T. Onozato, T. Katase, S. Katayama, and H. Ohta, “Opto-electronic properties of amorphous NbOx thin films”, THE 16th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “術” [JUTSU] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 10-11 November, 2015 (poster)

[9] M. Hirono, T. Katase, H. Ohta, “A transparent electro-chromic transistor”, PACIFICHEM2015 (The International Chemical Congress of Pacific Basin Societies 2015), Honolulu, Hawaii, 15-20 December, 2015 (oral)

[10] T. Katase, Y. Suzuki, H. Ohta, “Electrically controlled electro-magnetic phase conversion in magnetic oxide at room temperature”, PACIFICHEM2015 (The International Chemical Congress of Pacific Basin Societies 2015), Honolulu, Hawaii, 15-20 December, 2015 (oral)

[11] K. Nakamura, T. Katasei, T. Oshikiri, K. Ueno, H. Ohta, and H. Misawa, “Fabrication of thin film plasmonic solar cell using controlled nano structure”, PACIFICHEM2015 (The International Chemical Congress of Pacific Basin Societies 2015), Honolulu, Hawaii,15-20 December, 2015 (Poster)

Award

[1] THE 16th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM [JUTSU] Poster Award, Y. Suzuki, T. Katase, and H. Ohta, “All-solid-state non-volatile electromagnetic phase switching device”, THE 16th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM [JUTSU] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 10-11 Nov. 2015

Others

[1] Organizer, THE 16th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “術” [JUTSU] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 10-11 November, 2015

2014

Original paper

[1] W. S. Choi, H. Ohta, H. N. Lee, “Thermopower Enhancement by Fractional Layer Control in 2D Oxide Superlattices”, Adv. Mater. 26, 6701-6705 (2014). (DOI: 10.1002/adma.201401676) Inside Back Cover

[2] T. Katase, K. Endo, and H. Ohta, “Thermopower analysis of the electronic structure around metal-insulator transition in V1-xWxO2“, Phys. Rev. B 90, 161105(R) (2014). (arXiv) (DOI: 10.1103/PhysRevB.90.161105)

Invited talk

[1] T. Katase, K. Endo, and H. Ohta, “Metal-insulator transition and thermopower modulation of VO2 thin film by electric-field induced hydrogenation “, Oxide Thin Films for Advanced Energy and Information Applications; Materials Chemistry of Thin Film Oxides, Chicago, USA, July 13-16, 2014

[2] M. Yamanouchi, “Current-induced domain wall motion for spintronics devices”, The 1st Korea-Japan Bilateral Workshop on Functional Materials Science -Thermoelectrics, Spintronics, Low-dimensional Materials, and Soft Matter-, Sapporo, Japan, August 1, 2014

[3] H. Ohta, “Epitaxial Film Growth and Application of Functional Oxides”, HOKUDAI-NCTU Joint Symposium on Nano, Photo and Bio Sciences, RIES, Hokkaido University, Japan, 10-11 September 2014

Contributed talk

[1] T.Katase, K. Endo, and H. Ohta, “Electric-field induced hydrogenation of VO2 thin films; toward the modulation of metal-insulator transition and thermopower”, The 8th International Conference on the Science and Technology for Advanced Ceramics (STAC-8), Kanagawa, Japan, June 25-27, 2014

[2] K. Endo, T. Katase, and H. Ohta, “Electric-field induced hydrogenation of VO2 thin film transistor for modulation of metal-insulator phase transition” (Poster), The 1st Korea-Japan Bilateral Workshop on Functional Materials Science -Thermoelectrics, Spintronics, Low-dimensional Materials, and Soft Matter-, Sapporo, Japan, August 1, 2014

[3] T. Katase, Y. Suzuki, M. Yamanouchi, H. Takahashi, R. Okazaki, I. Terasaki, and H. Ohta, “Epitaxial film growth of ferromagnetic semiconductor Sr4-xAxCo4O10+δ (A = Y, Er) by pulsed laser deposition” (Poster), The 1st Korea-Japan Bilateral Workshop on Functional Materials Science -Thermoelectrics, Spintronics, Low-dimensional Materials, and Soft Matter-, Sapporo, Japan, August 1, 2014

[4] T. Katase, K. Endo, and H. Ohta, “Field-induced hydrogenation of VO2 thin film transistor for modulation of metal-insulator transition and thermopower”, 21st International Workshop on Oxide Electronics (WOE21), The Sagamore Resort, NY, USA,September 28 – October 1, 2014 (Poster)

[5] K. Endo, T. Katase, and H. Ohta, “AFM lithography using water infiltrated nanoporous glass”, THE 15th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “響” [Hibiki] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 16-17 December, 2014 (poster)

[6] T. Katase, Y. Suzuki, M. Yamanouchi, H. Takahashi, R. Okazaki, I. Terasaki, and H. Ohta, “Epitaxial film growth of room temperature ferromagnetic semiconductor Sr4-xErxCo4O10+d with A-site ordered structure”, THE 15th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “響” [Hibiki] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 16-17 December, 2014 (poster)

[7] M. Yamanouchi, A. Sakagami, T. Katase, and H. Ohta, “Domain wall motion in ferromagnetic oxide La0.67Sr0.33MnO3“, THE 15th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “響” [Hibiki] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 16-17 December, 2014 (poster)

Others

[1] H. Ohta, S-W. Kim, M. Yamanouchi, T. Katase, Organizer, The 1st Korea-Japan Bilateral Workshop on Functional Materials Science -Thermoelectrics, Spintronics, Low-dimensional Materials, and Soft Matter-, Sapporo, Japan, August 1, 2014

2013

Original paper

[1] H. Jeen, W. S. Choi, J. W. Freeland, H. Ohta, C. U. Jung, H. N. Lee, “Topotactic Phase Transformation of the Brownmillerite SrCoO2.5 to the Perovskite SrCoO3–δ“, Adv. Mater. 25, 3651-3656 (2013). (DOI: 10.1002/adma.201300531)

[2] H. Jeen,W-S. Choi, M. D. Biegalski, C. M. Folkman, I-C. Tung, D. D. Fong, J. W. Freeland, D. Shin, H. Ohta, M. F. Chisholm and H-N. Lee, “Reversible redox reactions in an epitaxially stabilized SrCoOx oxygen sponge”, Nature Mater. 12, 1057 (2013). (DOI:10.1038/nmat3736)

Review

[1] H. Ohta, “Electric-field thermopower modulation in SrTiO3-based field-effect transistors”, J. Mater. Sci. 48, 2797 (2013). (DOI 10.1007/s10853-012-6856-6)

Invited talk

[1] H. Ohta, “Electric Field Modulation of a Thermoelectric Material”, Thermec 2013, Las Vegas, USA, 2013.12.2-6

Contributed talk

[1] Ning Li, Takayoshi Katase, Yanbei Zhu, Tomonari Umemura, Takao Matsumoto, Yuichi Ikuhara and Hiromichi Ohta, “Solid-Liquid Phase Epitaxy of Li4Ti5O12 Thin Film”, 10th Thin Film Materials & Devices Meeting, Kyoto, Japan, Oct. 31 – Nov. 2, 2013 (in Japanese) (Proceeding) (Poster)

[2] Ning Li, Takayoshi Katase, Yanbei Zhu, Tomonari Umemura, Takao Matsumoto, Yuichi Ikuhara and Hiromichi Ohta, “Solid-Liquid Phase Epitaxy”, THE 14th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “網” [mou] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 2013.12.11-12 (Poster)

Others

[1] H. Ohta, 2013 MRS Spring Meeting Organizer (Symposium XX: Epitaxial Oxide Thin Films and Heterostructures for Advanced Information and Energy Technologies), with Dr. Gervasi Herranz (ICMAB-CSIC), Dr. Ho-Nyung Lee (Oak Ridge National Laboratory), and Dr. Jens Kreisel (Centre de Recherche Gabriel Lippmann)

2012

Original paper

[1] H. Ohta, T. Mizuno, S. Zheng, T. Kato, Y. Ikuhara, K. Abe, H. Kumomi, K. Nomura, and H. Hosono, “Unusually large enhancement of thermopower in an electric field induced two-dimensional electron gas”, Adv. Mater. 24, 740-744 (2012). (DOI: 10.1002/adma.201103809) (arXiv:1112.2030) Hlighted in Advanced Materials (7 Feb. 2012 issue)

[2] S. Zheng, C. A. J. Fisher, T. Kato, Y. Nagao, H. Ohta, and Y. Ikuhara, “Domain formation in anatase TiO2 thin films on LaAlO3 substrates”,Appl. Phys. Lett. 101, 191602 (2012).(DOI:10.1063/1.4766338)

[3] B. Feng, H. Hojo, T. Mizoguchi, H. Ohta, S. D. Findlay, Y. Sato, N. Shibata, T. Yamamoto, and Y. Ikuhara, “Atomic structure of a sigma3 [110]/(111) grain boundary in CeO2“, Appl. Phys. Lett. 100, 073109 (2012).(DOI:10.1063/1.3682310)

[4] [Retracted] H. Ohta, T. Mizoguchi, N. Aoki, T. Yamamoto, A. Sabarudin, and T. Umemura, “Lithium-ion conducting La2/3–xLi3xTiO3 solid electrolyte thin films with stepped and terraced surfaces”, Appl. Phys. Lett. 100, 173107 (2012). (DOI:10.1063/1.4709402) Retraction (DOI:10.1063/1.4794148)

Book

[1] H. Ohta and K. Koumoto, Chapter 10 “Thermoelectric oxides: films and heterostructures”, Multifunctional Oxide Heterostructures, (Eds.) E. Y. Tsymbal, E. R. A. Dagotto, C-B. Eom, and R. Ramesh, Oxford (2012).

Invited talk

[1] H. Ohta, “Two dimensional thermoelectric effect”, Distinguished Lecture Series for 2012 fall semester in Sungkyunkwan University, Korea, 12 December 2012

[2] H. Ohta, “Electric field thermopower modulation of 2DEG in oxide semiconductor based field effect transistors”, MRS 2012 Fall Meeting, Boston, MA, 26-30 November 2012

[3] H. Ohta, “Unusually large thermopower enhancement in an electric field induced two-dimensional electron gas”, E-MRS 2012 Spring Meeting, Strasbourg, France, 14-18 May 2012

[4] H. Ohta, “Electric-Field Thermopower Modulation Method”, Japan-Finland March Meeting for the future in thermoelectrics, Nagoya University, 13-14 March 2012

Contributed talk

[1] Hiromichi Ohta, Teruyasu Mizuguchi, Noriyuki Aoki, Takashi Yamamoto, Akhmad Sabarudin, Tomonari Umemura: “Single crystalline thin films of lithium-ion conducting La2/3-xLi3xTiO3 solid electrolyte: A solution towards interfacial lithium-ion conductivity”, MRS 2012 Fall Meeting, Boston (USA), 26-30 November 2012

[2] H. Ohta, “Electric Field Thermopower Modulation Method”, THE 13th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM, Gateaux Kingdom SAPPORO, Sapporo、13-14 December 2012 (poster)

[3] Noriyuki Aoki and Hiromichi Ohta: “Fabrication of atomically flat lithium-ion conducting La2/3-xLi3xTiO3 solid electrolyte”, THE 13th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM, Gateaux Kingdom SAPPORO, Sapporo、13-14 December 2012 (poster)

-2011

Original paper
  1. M. Seki, H. Tabata, H. Ohta, K. Inaba, and S. Kobayashi, “Epitaxial thin films of p-type spinel ferrite grown by pulsed laser deposition”,Appl. Phys. Lett. 99, 242504 (2011).
  2. T. Mizuno, Y. Nagao, A. Yoshikawa, K. Koumoto, T. Kato, Y. Ikuhara, and H. Ohta, “Electric field thermopower modulation analysis of an interfacial conducting layer formed between Y2O3 and rutile TiO2”, J. Appl. Phys. 110, 063719 (2011).
  3. H. Hojo, E. Tochigi, T. Mizoguchi, H. Ohta, N. Shibata, B. Feng, and Y. Ikuhara, Atomic structure and strain field of threading dislocations in CeO2 thin films on yttria-stabilized ZrO2, Appl. Phys. Lett. 98, 153104 (2011).
  4. T. Mizoguchi, H. Ohta, H-S. Lee, N. Takahashi, and Y. Ikuhara, “Controlling interface intermixing and properties of SrTiO3-based superlattices”, Adv. Funct. Mater. 21, 2258–2263 (2011).
  5. Y. Kozuka, M. Kim, H. Ohta, Y. Hikita, C. Bell, and H. Y. Hwang, “Enhancing the electron mobility via delta-doping in SrTiO3”, Appl. Phys. Lett. 97, 222115 (2010).
  6. H. Hojo, T. Mizoguchi, H. Ohta, S. D. Findlay, N. Shibata, T. Yamamoto, and Y. Ikuhara, “Atomic Structure of a CeO2 Grain Boundary: The Role of Oxygen Vacancies”, Nano Lett. 10, 4668–4672 (2010).
  7. H. Ohta, Y. Sato, T. Kato, S-W. Kim, K. Nomura, Y. Ikuhara and H. Hosono, “Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal”, Nature Communications 1:118 (2010).
  8. H. Koide, Y. Nagao, K. Koumoto, Y. Takasaki, T. Umemura, T. Kato, Y. Ikuhara, and H. Ohta, “Electric field modulation of thermopower for transparent amorphous oxide thin film transistors”, Appl. Phys. Lett. 97, 182105 (2010).
  9. Y. Nagao, A. Yoshikawa, K. Koumoto, T. Kato, Y. Ikuhara, and H. Ohta, “Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation”, Appl. Phys. Lett. 97, 172112 (2010).
  10. Y. Ishida, A. Mizutani, K. Sugiura,H. Ohta, and K. Koumoto, “Metal-nonmetal transition in LixCoO2thin films and thermopower enhancement at high Li concentration”, Phys. Rev. B 82, 075325 (2010).
  11. W-S. Choi, H. Ohta, S-J. Moon, Y-S. Lee, and T-W. Noh, “Dimensional crossover of the polaron dynamics in thermoelectric Nb:SrTiO3/SrTiO3 superlattices: Possible mechanism of thermopower enhancement”, Phys. Rev. B 82, 024301 (2010).
  12. K. Uchida, A. Yoshikawa, K. Koumoto, T. Kato, Y. Ikuhara, andH. Ohta, “A single crystalline strontium titanate thin film transistor”,J. Appl. Phys. 107, 096103 (2010).
  13. T. Katase, K. Nomura,H. Ohta, H. Yanagi, T. Kamiya, M. Hirano and H. Hosono, “Fabrication of atomically flat ScAlMgO4epitaxial buffer layer and low-temperature growth of high-mobility ZnO films”, Cryst. Growth Des. 10, 1084–1089 (2010).
  14. A. Yoshikawa, K. Uchida, K. Koumoto, T. Kato, Y. Ikuhara, andH. Ohta, “Electric-Field Modulation of Thermopower for the KTaO3Field Effect Transistors”, Appl. Phys. Express 2, 121103 (2009).
  15. H. Ohta, Y. Masuoka, R. Asahi, T. Kato, Y. Ikuhara, K. Nomura, and H. Hosono, “Field-modulated thermopower in a SrTiO3-based field-effect transistor with amorphous 12CaO·7Al2O3glass gate insulator”, Appl. Phys. Lett. 95, 113505 (2009).
  16. S-W. Kim, Y. Tarumi, H. Iwasaki, H. Ohta, M. Hirano, and H.Hosono, “Thermal conductivity and Seebeck coefficient of 12CaO·7Al2O3electride with a cage structure”, Phys. Rev. B 80, 075201 (2009).
  17. T. Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Large domain growth of GaN epitaxial films on lattice-matched buffer layer ScAlMgO4”, Mater. Sci. Eng. B 161, 66–70 (2009).
  18. Y. Wang, K-H. Lee,H. Ohta, and K. Koumoto, “Thermoelectric properties of electron doped SrO(SrTiO3)n(n = 1, 2) ceramics”, J. Appl. Phys. 105, 103701 (2009).
  19. K. Sugiura,H. Ohta, S. Nakagawa, R. Huang, Y. Ikuhara, K. Nomura, H. Hosono, and K. Koumoto, “Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy”,Appl. Phys. Lett. 94, 152105 (2009).
  20. K. Sugiura,H. Ohta, Y. Ishida, R. Huang, T. Saito, Y. Ikuhara, K. Nomura, H. Hosono, and K. Koumoto, “Structural Transformation of Ca-Arrangements and Carrier Transport Properties in Ca0.33CoO2Epitaxial Films”, Appl. Phys. Express 2, 035503 (2009).
  21. R. Huang, T. Mizoguchi, K. Sugiura, S. Nakagawa,H. Ohta, T. Saito, K. Koumoto, T. Hirayama, and Y. Ikuhara, “Microstructure evolution of Ca0.33CoO2thin films investigated by high-angle annular dark-field scanning transmission electron microscopy”, J. Mater. Res. 24, 279–287 (2009).
  22. K. Nomura, T. Kamiya,H. Ohta, M. Hirano, and H. Hosono, “Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2annealing”, Appl. Phys. Lett. 93, 192107 (2008).
  23. R. Huang, T. Mizoguchi, K. Sugiura,H. Ohta, K. Koumoto, T. Hirayama and Y. Ikuhara, “Direct observations of Ca ordering in Ca0.33CoO2thin films with different superstructures”,Appl. Phys. Lett. 93, 181907 (2008).
  24. K. Nomura, T. Kamiya,H. Ohta, K. Shimizu, M. Hirano, and H. Hosono, “Relationship between non-localized tail states and carrier transport in amorphous oxide semiconductor, In-Ga-Zn-O”,Phys. Stat. Sol. (a) 205, 1910–1914 (2008).
  25. H. Ohta, R. Huang, and Y. Ikuhara, “Large enhancement of the thermoelectric Seebeck coefficient for amorphous oxide semiconductor superlattices with extremely thin conductive layers”,Phys. Stat. Sol. (Rapid Research Letter) 2, 105–107 (2008).
  26. Y. Ishida, R. Eguchi, M. Matsunami, K. Horiba, M. Taguchi, A. Chainani, Y. Senba, H. Ohashi,H. Ohta, and S. Shin, “Coherent and Incoherent States of Electron-doped SrTiO3”,Phys. Rev. Lett. 100, 056401 (2008).
  27. K-H. Lee, Y. Mune,H. Ohta, and K. Koumoto, “Thermal stability of giant thermoelectric Seebeck coefficient for SrTiO3/SrTi0.8Nb0.2O3superlattices at high temperature”,Appl. Phys. Express 1, 015007 (2008).
  28. Y. Wang, K-H. Lee,H. Ohta, and K. Koumoto, “Fabrication and thermoelectric properties of heavily rare-earth metal-doped SrO(SrTiO3)n(n= 1, 2) ceramics”, Ceram. Int. 34, 849–852 (2008).
  29. A. Mizutani, K. Sugiura,H. Ohta, and K. Koumoto, “Epitaxial film growth of LixCoO2(0.6 < x < 0.9) via topotactic ion exchange of Na0.8CoO2”, Cryst. Growth Des. 8, 755–758 (2008).
  30. K. Sugiura,H. Ohta, K. Nomura, T. Saito, Y. Ikuhara, M. Hirano, H. Hosono, and K. Koumoto, “Thermoelectric properties of the layered cobaltite Ca3Co4O9epitaxial films fabricated by topotactic ion-exchange method”, Mater. Trans. 48, 2104–2107 (2007).
  31. Y. Wang, K-H. Lee, H. Hyuga, H. Kita, K. Inaba,H. Ohta, and K. Koumoto, “Enhancement of Seebeck coefficient for SrO(SrTiO3)2by Sm-substitution: Crystal symmetry restoration of disordered TiO6 octahedra”, Appl. Phys. Lett. 91, 242102 (2007).
  32. K. Kato, M. Yamamoto, S. Ohta, H. Muta, K. Kurosaki, S. Yamanaka, H. Iwasaki,H. Ohta, and K. Koumoto, “The effect of Eu-substitution on thermoelectric properties of SrTi0.8Nb0.2O3”,J. Appl. Phys. 102, 116107 (2007).
  33. Y. Mune,H. Ohta, K. Koumoto, T. Mizoguchi, and Y. Ikuhara, “Enhanced Seebeck coefficient of quantum-confined electrons in SrTiO3/SrTi0.8Nb0.2O3superlattices”, Appl. Phys. Lett. 91, 192105 (2007).
  34. Y. Ishida,H. Ohta, A. Fujimori, and H. Hosono, “Temperature dependence of the chemical potential in NaxCoO2: Implications for the large thermoelectric power”,J. Phys. Soc. Jpn. 76, 103709 (2007).
  35. K-H. Lee, S-W. Kim, A. Ishizaki,H. Ohta, and K. Koumoto, “Preparation and thermoelectric properties of heavily Nb-doped SrO(SrTiO3)1epitaxial films”,J. Appl. Phys. 102, 033702 (2007).
  36. H. Hiramatsu, K. Ueda,H. Ohta, M. Hirano, M. Kikuchi, H. Yanagi, T. Kamiya, and H. Hosono, “Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass”,Appl. Phys. Lett. 91, 012104 (2007).
  37. K-H. Lee, S-W. Kim,H. Ohta, and K. Koumoto, “Thermoelectric properties of layered perovskite-type (Sr1-xCax)(Ti1-yNby)2O7”,J. Appl. Phys. 101, 083707 (2007).
  38. M. Yamamoto,H. Ohta, and K. Koumoto, “Thermoelectric phase diagram in a CaTiO3-SrTiO3-BaTiO3system”, Appl. Phys. Lett. 90, 072101 (2007).
  39. K. Nomura, T. Kamiya,H. Ohta, T. Uruga, M. Hirano, and H. Hosono, “Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment andab initio calculations”, Phys. Rev. B 75, 035212 (2007).
  40. H. Ohta, S-W. Kim, Y. Mune, T. Mizoguchi, K. Nomura, S. Ohta, T. Nomura, Y. Nakanishi, Y. Ikuhara, M. Hirano, H. Hosono, and K. Koumoto, “Giant Thermoelectric Seebeck coefficient of a Two-dimensional Electron Gas in SrTiO3”,Nature Mater. 6, 129–134 (2007).
  41. T. Kamiya, Y. Takeda, K. Nomura,H. Ohta, H. Yanagi, M. Hirano, and H. Hosono, “Self-adjusted, three-dimensional lattice-matched buffer layer for growing ZnO epitaxial film: homologous series layered oxide, InGaO3(ZnO)5”,Cryst. Growth Des. 6, 2451–2456 (2006).
  42. D. Flahaut, T. Mihara, R. Funahashi, N. Nabeshima, K. Lee,H. Ohta, and K. Koumoto, “Thermoelectric properties of A-site substituted Ca1-xRexMnO3system”, J. Appl. Phys. 100, 084911 (2006).
  43. D. Kurita, S. Ohta, K. Sugiura,,H. Ohta, and K. Koumoto, “Carrier generation and transport properties of heavily Nb-doped anatase TiO2epitaxial films at high-temperatures”,J. Appl. Phys. 100, 096105 (2006).
  44. K-H. Lee,H. Ohta, S-W. Kim, and K. Koumoto, “Investigating Ruddlesden-Popper phase as thermoelectric materials: Nb-doped SrO(SrTiO3)n(n=1, 2)”, J. Appl. Phys. 100, 063717 (2006).
  45. Y. Ishida,H. Ohta, M. Hirano, A. Fujimori, and H. Hosono, “Potensial profiling of the nanometer-scale charge depletion in n-ZnO/p-NiO junction using photoemission spectroscopy”,Appl. Phys. Lett. 89, 153502 (2006).
  46. H. Hiramatsu, H. Kamioka, K. Ueda,H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, “Opto-electronic properties and light-emitting device application of widegap layered oxychalcogenides: LaCuOCh(Ch = chalcogen) and La2CdO2Se”, Phys. Stat. Sol. (a) 203, 2800–2811 (2006).
  47. K. Nomura, A. Takagi, T. Kamiya,H. Ohta, M. Hirano, and H. Hosono, “Amorphous oxide semiconductors for high-performance flexible thin-film transistors”,Jpn. J. Appl. Phys. 45, 4303–4308 (2006).
  48. K. Sugiura,H. Ohta, K. Nomura, M. Hirano, H. Hosono, and K. Koumoto, “High electrical conductivity of layered cobalt oxide Ca3Co4O9epitaxial films grown by topotactic ion exchange method”,Appl. Phys. Lett. 89, 032111 (2006).
  49. H. Ohta, A. Mizutani, K. Sugiura, M. Hirano, H. Hosono, and K. Koumoto, “Surface Modification of Glass Substrate for Oxide Heteroepitaxy: Pastable Three-dimensionally Oriented Layered Oxide Thin Film”,Adv. Mater. 18, 1649–1652 (2006).
  50. K. Sugiura,H. Ohta, K. Nomura, M. Hirano, H. Hosono, and K. Koumoto, “Fabrication and thermoelectric properties of layered cobaltite, γ-Sr0.32Na0.21CoO2epitaxial films”, Appl. Phys. Lett. 88, 082109 (2006).
  51. K. Sugiura,H. Ohta, K. Nomura, H. Yanagi, M. Hirano, H. Hosono, and K. Koumoto, “Epitaxial film growth and superconducting behavior of sodium-cobalt oxyhydrate, NaxCoO2·yH2O (x~0.3,y~1.3)”, Inorg. Chem. (communication) 45, 1894–1896 (2006).
  52. S. Ohta,H. Ohta, and K. Koumoto, “Grain size dependence of thermoelectric performance of Nb-doped SrTiO3polycrystals”, J. Ceram. Soc. Japan 114, 102–105 (2006).
  53. H. Hiramatsu, K. Ueda,H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, “Excitonic blue luminescence from p-LaCuOSe/n-InGaZn5O8light-emitting diode at room temperature”, Appl. Phys. Lett. 87, 211107 (2005).
  54. PX. Zhu, T. Takeuchi,H. Ohta, WS. Seo, and K. Koumoto, “Preparation and thermoelectric properties of NaxCoO2/Co3O4layered nano-composite”, Mater. Trans. 46, 1453–1455 (2005).
  55. S. Ohta, T. Nomura,H. Ohta, M. Hirano, H. Hosono, and K. Koumoto, “Large thermoelectric performance of heavily Nb-doped SrTiO3epitaxial film at high-temperature”,Appl. Phys. Lett. 87, 092108 (2005).
  56. F. Oba, Y. Sato, T. Yamamoto,H. Ohta, H. Hosono, and Y. Ikuhara, “Effect of boundary plane on the atomic structure of [0001] Σ7 tilt grain boundaries in ZnO”,J. Mater. Sci. 40, 3067–3074 (2005).
  57. T. Kamiya, S. Narushima, H. Mizoguchi, K. Shimizu, K. Ueda,H. Ohta, M. HIrano and H. Hosono, “Electrical properties and structure of p-type amorphous oxide semiconductorxZnO·Rh2O3”, Adv. Funct. Mater. 15, 968–974 (2005).
  58. S. Ohta, T. Nomura,H. Ohta, and K. Koumoto, “High-temperature carrier transport and thermoelectric properties of heavily La- or Nb-doped SrTiO3single crystals”, J. Appl. Phys. 97, 034106 (2005).
  59. T. Kambayashi,H. Ohta, H. Hoshi, M. Hirano, H. Hosono, T. Takezoe, and K. Ishikawa, “Epitaxial growth of a copper-phthalocyanine on a transparent conductive substrate with an atomically flat surface”,Cryst. Growth Des. 5, 143–146 (2005).
  60. H. Ohta, S-W. Kim,S. Ohta, K. Koumoto, M. Hirano, and H. Hosono, “Reactive solid-phase epitaxial growth of NaxCoO2 (x ~0.83) via lateral diffusion of Na into a cobalt oxide epitaxial layer”, Cryst. Growth Des. 5, 25–28 (2005).
  61. Y. Gao, Y. Masuda, WS. Seo,H. Ohta, and K. Koumoto, “TiO2 nanoparticles prepared using an aqueous peroxotitanate solutions”, Ceram. Int. 30, 1365-1368 (2004).
  62. Y. Gao, Y. Masuda,H. Ohta, and K. Koumoto, “Room temperature preparation of ZrO2precursor thin film in an aqueous peroxozirconium-complex solution”, Chem. Mater. 16, 2615-2622 (2004).
  63. H. Hiramatsu, K. Ueda, T. Kamiya,H. Ohta, M. Hirano, and H. Hosono, “Optical properties and two dimensional electronic structure in wide-gap layered oxychalcogenide: La2CdO2Se2”,J. Phys. Chem. B 108, 17344–17351 (2004).
  64. F. Oba,H. Ohta, Y. Sato, H. Hosono, T. Yamamoto, and Y. Ikuhara, “Atomic structure of [0001]-tilt grain boundaries in ZnO: A high-resolution TEM study of fiber-textured thin films”,Phys. Rev. B 70, 125415 (2004).
  65. T. Sasaki, K. Matsunaga,H. Ohta, H. Hosono, T. Yamamoto, and Y. Ikuhara, “Atomic and Electronic Structures of Ni/YSZ(111) Interface”,Mater. Trans.45, 2137–2143 (2004).
  66. H. Hiramatsu, K. Ueda, K. Takafuji,H. Ohta, M. Hirano, T. Kamiya, and H. Hosono, “Degenerate electrical conductive and excitonic photoluminescence properties of pitaxial films of wide gap p-type layered oxychalcogenides,LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se)”, Appl. Phys. A 79, 1521–1523 (2004).
  67. T. Kamiya,H. Ohta, M. Kamiya, K. Nomura, K. Ueda, M. Hirano, and H. Hosono, “Li-doped NiO epitaxial thin film with atomically flat surface”,J. Mater. Res. 19, 913–920 (2004).
  68. H. Hiramatsu, K. Ueda, K. Takafuji,H. Ohta, M. Hirano, T. Kamiya, and H. Hosono, “Heteroepitaxial growth of wide gap p-type semiconductors:LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy”, Appl. Phys. A 79, 1517–1520 (2004).
  69. H. Hiramatsu, K. Ueda, K. Takafuji,H. Ohta, M. Hirano, T. Kamiya, and H. Hosono, “Fabrication of heteroepitaxial thin films of layered oxychalcogenidesLnCuOCh (Ln=La–Nd; Ch=S–Te) by reactive solid-phase epitaxy”, J. Mater. Res. 19, 2137–2143 (2004).
  70. K. Nomura,H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5films”, Appl. Phys. Lett. 85, 1993–1995 (2004).
  71. K. Nomura,H. Ohta, A. Takagi, T, Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors”,Nature 432, 488–492 (2004).
  72. T. Kamiya,H. Ohta, H. Hiramatsu, K. Hayashi, K. Nomura, S. Matsuishi, K. Ueda, M. Hirano, and H. Hosono, “Natural nanostructures in ionic semiconductors”,Microelectron. Eng. 73-74, 620–626 (2004).
  73. K. Ueda, H. Hiramatsu,H. Ohta, M. Hirano, T. Kamiya, and H. Hosono, “Single-atomic-layered quantum wells built in wide-gap semiconductorsLnCuOCh (Ln=lanthanide, Ch=chalcogen)”, Phys. Rev. B 69, 155305 (2004).
  74. K. Nomura,H. Ohta, K. Ueda, T. Kamiya, M. Orita, M. Hirano, T. Suzuki, C. Honjyo, Y. Ikuhara, and H. Hosono, “Growth mechanism for single-crystalline thin film of InGaO3(ZnO)5by reactive solid-phase epitaxy”, J. Appl. Phys. 95, 5532–5539 (2004).
  75. K. Nomura,H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “All oxide transparent MISFET using high-kdielectrics gates”,Miroelectron. Eng. 72, 294–298 (2004).
  76. H. Ohta, T. Kambayashi, K. Nomura, M. Hirano, K. Ishikawa, H. Takezoe, and H. Hosono, “Transparent organic thin-film transistor with a laterally grown non-planar phthalocyanine channel”,Adv. Mater. 16, 312–315 (2004).
  77. H. Hiramatsu,H. Ohta, T. Suzuki, C. Honjyo, Y. Ikuhara, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Mechanism for heteroepitaxial growth of transparent P-type semiconductor: LaCuOS by reactive solid-phase epitaxy”,Cryst. Growth. Des. 4, 301–307 (2004).
  78. H. Kamioka, H. Hiramatsu,H. Ohta, M. Hirano, K. Ueda, T. Kamiya, and H. Hosono, “Third-order optical nonlinearity originating from room-temperature exciton in layered compounds LaCuOS and LaCuOSe”,Appl. Phys. Lett. 84, 879–881 (2004).
  79. T. Sasaki, K. Matsunaga,H. Ohta, H. Hosono, T. Yamamoto, and Y. Ikuhara, “Atomic and electronic structures of Cu/α-Al2O3interfaces prepared by pulsed-laser deposition”, Science and Technology of Advanced Materials 4, 575–584 (2003).
  80. H. Hiramatsu, K. Ueda, K. Takafuji,H. Ohta, M. Hirano, T. Kamiya, and H. Hosono, “Intrinsic excitonic photoluminescence and band-gap engineering of wide-gap p-type oxychalcogenide epitaxial films ofLnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys”, J. Appl. Phys. 94, 5805–5808 (2003).
  81. H. Hiramatsu, K. Ueda, K. Takafuji,H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, “Electrical and optical properties and electronic structures ofLnCuOS (Ln = La similar to Nd)”, Chem. Mater. 15, 3692–3695 (2003).
  82. S. Narushima, H. Mizoguchi, K. Simizu, K. Ueda,H. Ohta, M. Hirano, T. Kamiya, and H. Hosono, “A p-type amorphous oxide semiconductor and room temperature fabrication of amorphous oxide p-n heterojunction diodes”,Adv. Mater. 15, 1409–1413 (2003).
  83. H. Ohta, M. Hirano, K. Nakahara, H. Maruta, T. Tanabe, M. Kamiya, T. Kamiya, and H. Hosono, “Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO”,Appl. Phys. Lett. 83, 1029–1031 (2003).
  84. H. Ohta, T. Kambayashi, M. Hirano, H. Hoshi, K. Ishikawa, H. Takezoe, and H. Hosono, “Application of transparent conductive substrate with atomically flat & stepped surface for lateral growth of organic molecule: vanadyl-phthalocyanine”,Adv. Mater. 15, 1258–1262 (2003).
  85. K. Nomura,H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Thin film transistor fabricated in single-crystalline transparent oxide semiconductor”,Science 300, 1269–1272 (2003).
  86. H. Ohta, K. Nomura, M. Orita, M. Hirano, K. Ueda, T. Suzuki, Y. Ikuhara, and H. Hosono, “Single-crystalline films of InGaO3(ZnO)m(m=integer) homologous phase grown by reactive solid-phase epitaxy”,Adv. Funct. Mater. 13, 139–144 (2003).
  87. H. Ohta, H. Mizoguchi, M. Hirano, S. Narushima, T. Kamiya, and H. Hosono, “Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO”,Appl. Phys. Lett. 82, 823–825 (2003).
  88. H. Hiramatsu, K. Ueda,H. Ohta, M. Hirano, T. Kamiya, and Hideo Hosono, “Degenerate p-type conductivity in wide-gap LaCuOS1-xSex(x=0~1) epitaxial films”,Appl. Phys. Lett. 82, 1048–1050 (2003).
  89. H. Hiramatsu,H. Ohta, M. Hirano, and H. Hosono, “Heteroepitaxial growth of single-phase zinc blend ZnS film on transparent substrate by pulsed laser deposition under H2S atmosphere”,Solid State Comm. 124, 411–415 (2002).
  90. H. Ohta, M. Orita, M. Hirano, I. Yagi, K. Ueda, and H. Hosono, “Electronic structure and optical properties of p-type transparent oxide semiconductor; SrCu2O2”,J. Appl. Phys. 91, 3074–3078 (2002).
  91. H. Ohta, M. Orita, M. Hirano, and H. Hosono, “Surface morphology and crystal quality of low resistive indium tin oxide grown on yttria-stabilized zirconia”,J. Appl. Phys. 91, 3547–3550 (2002).
  92. M. Miyakawa, R. Noshiro, T. Ogawa, K. Ueda, H. Kawazoe,H. Ohta, M. Orita, M. Hirano, and H. Hosono, “Carrier doping into MgIn2O4epitaxial thin films by proton implantation”,J. Appl. Phys. 91, 2112–2117 (2002).
  93. H. Hiramatsu, K. Ueda,H. Ohta, M. Orita, M. Hirano, and H. Hosono, “Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS”,Appl. Phys. Lett. 81, 598–600 (2002).
  94. H. Hosono,H. Ohta, K. Hayashi, M. Orita, and M. Hirano, “Near UV-emitting diodes based on transparent P-N junction composed of heteroepitaxially grown p-SrCu2O2and n-ZnO”, J. Crystal Growth 237-239, 496–502 (2002).
  95. H. Yanagi, K. Ueda, H. Hosono,H. Ohta, M. Orita, and M. Hirano, “Fabrication of all oxide transparent p-n homojunction using bipolar CuInO2”,Solid State Comm. 121, 15–17 (2002).
  96. H. Ohta, M. Orita, M. Hirano, and H. Hosono, “Fabrication and characterization of ultraviolet-emitting diode composed of transparent p-n heterojunction, p-SrCu2O2and n-ZnO”, J. Appl. Phys. 89, 5720–5725 (2001).
  97. M. Orita,H. Ohta, M. Hirano,S. Narushima, and H. Hosono, “Amorphous transparent conductive oxide InGaO3(ZnO)m (m<4) : a Zn 4s Conductor”, Phil. Mag. 81, 501–515 (2001).
  98. K. Ueda, T. Hase, H. Ynagai, H. Kawazoe, H. Hosono,H. Ohta, M. Orita, and M. Hirano, “Epitaxial growth of transparent p-type conducting CuGaO2thin films on sapphire (001) substrates by pulsed laser deposition”, J. Appl. Phys. 89, 1790–1793 (2001).
  99. M. Orita,H. Ohta, H. Hiramatsu, M. Hirano, S. Den, M. Sasaki, T. Katagiri, H. Minura, and H. Hosono, “Pulsed laser deposition system for producing oxide thin films at high temperature”,Rev. Sci. Inst. 72, 3340–3343 (2001).
  100. H. Ohta, K. Kawamura, M. Orita, N. Sarukura, M. Hirano, and H. Hosono, “Current injection emission from a transparent p-n junction composed of p-SrCu2O2/n-ZnO”,Appl. Phys. Lett., 77, 475–477 (2000).
  101. H. Ohta, K. Kawamura, M. Orita,N. Sarukura, M. Hirano, and H. Hosono, “UV-emitting diode composed of transparent oxide semiconductors: p-SrCu2O2/n-ZnO”, Electron. Lett. 36, 984–985 (2000).
  102. H. Ohta, M. Orita, M. Hirano, H. Tanji, H. Kawazoe, and H. Hosono, “Highly electrically conductive indium-tin-oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition”,Appl. Phys. Lett. 76, 2740–2742 (2000).
  103. M. Orita, H. Ohta, M. Hirano, and H. Hosono, “Deep-ultraviolet transparent conductive β-Ga2O3 thin films”, Appl. Phys. Lett. 77, 4166–4168 (2000).
  104. Y. Michiue, F. Brown, N. Kimizuka, M. Onoda, M. Nakamura, M. Watanabe, M. Orita,, andH. Ohta, “Crystal structure of InTi0.75Fe0.25Ti0.67O3.375 and phase relations in the pseudobinary system InFeO3-In2Ti2O7at 1300°C”, Chem. Mater. 12, 2244–2249 (2000).
  105. Y. Michiue, F. Brown, N. Kimizuka, M. Watanabe, M. Orita, andH. Ohta, “Orthorhombic InFe0.33Ti0.67O3.33”,Acta. Cryst. C 55, 1755–1757 (1999).
  106. H. Hiramatsu,H. Ohta, W. S. Seo, and K. Koumoto, “Thermoelectirc properties of (ZnO)5In2O3thin films prepared by r.f. sputtering method”, J. Jpn. Soc. Powder and Powder Metal. 44, 44–49 (1997).
  107. H. Ohta, W. S. Seo, and K. Koumoto, “Thermoelectirc properties of homologous compounds in the ZnO-In2O3system”, J. Am. Ceram. Soc.79, 2193–2196 (1996).
Review
  1. H. Ohta, K. Sugiura, and K. Koumoto, “Recent Progress in Oxide Thermoelectric Materials -p-type Ca3Co4O9 and n-type SrTiO3 –”, Inorg. Chem. 47, 8429–8436 (2008).
  2. H. Ohta, “Two-dimensional thermoelectric Seebeck coefficient of the SrTiO3 based superlattices”, phys. stat. sol. (b) 245, 2363–2368 (2008).
  3. H. Ohta, “Thermoelectrics based on Strontium Titanate”, Mater. Today 10, 44–49 (2007).
  4. H. Ohta, “Reactive Solid-Phase Epitaxy: A powerful method for epitaxial film growth of complex layered oxides”, J. Ceram. Soc. Jpn. 114, 147 (2006).
  5. H. Ohta and H. Hosono, “Transparent Oxide Optoelectronics”, Mater. Today 7, 42–51 (2004).
  6. H. Ohta, K. Nomura, H. Hiramatsu, T. Suzuki, K. Ueda, T. Kamiya, M. Hirano, Y. Ikuhara, and H. Hosono, “High-Quality Epitaxial Film Growth of Trasparent Oxide Semiconductors”, J. Ceram. Soc. Jpn. 112[S], S602–S609 (2004).
  7. H. Ohta, M. Orita, M. Hirano, K. Ueda, and H. Hosono, “Epitaxial growth of transparent conductive oxides”, International Journal of Modern Physics B 16, 173–181 (2002).
  8. H. Hosono, H. Ohta, M. Orita, K. Ueda, and M. Hirano, “Frontier of transparent conductive oxide thin films”, Vacuum 66, 419–425 (2002).
  9. H. Ohta, K. Nomura, H. Hiramatsu, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Frontier of transparent oxide semiconductors”, Solid State Electron. 47, 2261–2267 (2003).
Book
  1. H. Ohtaand K. Koumoto, Chapter 10 Thermoelectric oxides: films and heterostructures,Multifunctional Oxide Heterostructures, (Eds.) E. Y. Tsymbal, E. R. A. Dagotto, C-B. Eom, and R. Ramesh, Oxford (2012).
  2. H. Ohta, Chapter 14 Junctions,Handbook of Transparent Conductors, 1st Edition, (Eds.) D. S. Ginley, H. Hosono, and D. C. Paine, Springer-Verlag (2010).
Invited talk
  1. H. Ohta, “Electric Field Modulation of Thermopower for SrTiO3“, MRS 2010 spring meeting, San Francisco, CA, 4-9th April, 2010 Invited
  2. H. Ohta, Kenji Sugiura, Kunihito Koumoto, Kenji Nomura, Hidenori Hiramatsu, Masahiro Hirano and Hideo Hosono, “Heteroepitaxy of Complex Oxides With Natural Superlattice Structure”, MRS 2010 spring meeting, San Francisco, CA, 4-9th April, 2010 Invited
  3. H. Ohta, “Thermoelectric Seebeck effect of SrTiO3 – Electron doped bulks, superlattices and field effect transistors”, The 16th Workshop on Oxide Electronics, Tarragona (Spain), 6th October, 2009 Invited
  4. H. Ohta, Akira Yoshikawa, Daisuke Kurita, Kunihito Koumoto, Ryoji Asahi, Yumi Masuoka, Kenji Nomura, and Hideo Hosono, “Electric Field Induced Giant Thermopower of Two-dimensional Electron Gas at the Gate Insulator/SrTiO3 Heterointerface”, 2009 MRS spring meeting, San Francisco, CA, 13-17th April, 2009 Invited
  5. H. Ohta, “Thermoelectric Seebeck coefficient of two-dimensional electron layer in SrTiO3 crystal”, Villa Conference on Complex Oxide Heterostructures, Orange Tree Villa, Clermont, FL, 2nd-6th November, 2008 Invited
  6. H. Ohta, “Enhancement of thermoelectric performance using 2DEG”, Shandong University Seminar (organized by Prof. Wang Chunlei), Shandong University, 22nd October, 2008 Invited
  7. K. Koumoto and H. Ohta, “SrTiO3-based superlattices for thermoelectric energy conversion”, Materials Science & Technology 2008 Conference and Exhibition, David Lawrence Convention Center, Pittsburgh, Pennsylvania, 5-9th October, 2008 Invited
  8. H. Ohta, “Giant Thermopower of Two Dimensionally Confined Electrons in Dielectric Oxides”, Nagoya Univ.-Tsinghua Univ.-Toyota Motor Corp. Joint Symposium, Nagoya Univ., 10-12th September, 2008 Invited
  9. H. Ohta, “Two-dimensional thermoelectric Seebeck coefficient of electron doped SrTiO3”, The 7th Korea-Japan Conference on Ferroelectricity, Jeju, South Korea, 6-9th August, 2008 Invited
  10. H. Ohta, “Two-dimensional Seebeck Effect in SrTiO3 Superlattices”, 7th Pacific Rim Conference on Ceramic and Glass Technology, Shanghai (China), 13th November, 2007 Invited
  11. H. Ohta and K. Koumoto, “Development of thermoelectric oxide based on SrTiO3”, 1st International Forum on Advanced Materials, Shanghai (China), 10th November, 2007 Invited
  12. H. Ohta, T. Mizoguchi, Y. Mune, Y. Ikuhara, K. Koumoto, “Enhanced Seebeck coefficient of quantum confined electrons in the SrTiO3/SrTi0.8Nb0.2O3 superlattices”, The 7th France-Japan Workshop on Nanomaterials, Strasbourg (France), 24th October, 2007 Invited
  13. H. Ohta, “Development of SrTiO3-based thermoelectric thin film with two dimensional electrons”, The 14th International Workshop on Oxide Electronics, Jeju (South Korea), 8th October, 2007 Invited
  14. H. Ohta, “Enhanced Seebeck coefficient of two-dimensionally confined electrons in a SrTiO3 unit cell layer”, International Symposium on Nano-Thermoelectrics, Osaka (Japan), 11-12th June, 2007 Invited
  15. H. Ohta, “Giant thermoelectric response of two-dimensional electrons confined within a unit cell layer of SrTiO3”, The 5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-5), Kanagawa, Japan, 21-22nd May, 2008 Invited
  16. Hiromichi Ohta, SungWng Kim, Kenji Nomura, Shingo Ohta, Takashi Nomura, Masahiro Hirano, Hideo Hosono, and Kunihito Koumoto, “Giant Seebeck effect originating from 2DEG at the TiO2/SrTiO3 heterointerface”, the 2005 MRS Fall Meeting, Boston (USA), 27th November – 2nd December, 2005 Invited
  17. H. Ohta, S. Ohta, and K. Koumoto, “Large Thermoelectric Response of Ti-containing Perovskite Oxides”, SSTE-1; a special symposium on the 4th China International Conference on High-Performance Ceramics, China, 23-26th October, 2005 Invited
  18. Hiromichi Ohta, Kenji Nomura, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano and Hideo Hosono: Epitaxial Growth and Application of Transparent Oxide Semiconductors; 204th Meeting of the Electrochemical Society, Olando, USA, 12-16th October, 2003 Invited
  19. Hiromichi Ohta, Kenji Nomura, Hidenori Hiramatsu, Toshiyuki Suzuki, Kazushige Ueda, Toshio Kamiya, Msahiro Hirano, Yuichi Ikuhara and Hideo Hosono: Single-crystalline film growth techniques of transparent oxide semiconductors; PacRim 2003, Nagoya, Japan, October, 2003 Invited
  20. H. Ohta, H. Hiramatsu, M. Orita, M. Hirano, K. Nomura, K. Ueda, H. Hosono, T. Suzuki, Y. Ikuhara, “Reactive Solid-Phase Epitaxy – A magical way to fabricate single-crystalline thin films of complex oxides with superlattice structure”, 2002 MRS Fall Meeting, Boston, USA, 2-6 December, 2002 Invited
  21. Ohta, H; Nomura, K.; Ueda, K.;Orita, M.; Hirano, M.; Hosono, H. Single crystal films of In2O3(ZnO)m(m=integer) natural super lattice grown by novel solid-state diffusiontechnique. The International Conference On Metallurgical Coatings And ThinFilms ICMCTF 2002, San Diego, California, USA , 22-26th April, 2002 Invited
  22. H. Ohta, M. Orita, M. Hirano, H. Hosono: Improvement of UV-light emission for P-N heterojunction LED composed of p-SrCu2O2 and n-ZnO; MRS 2001 spring meeting, San Francisco, California, USA, 16-20th April, 2001 Invited
  23. H. Ohta, M. Orita, K. Ueda, M. Hirano, H. Hosono, “Epitaxial growth of transparent conductive oxides”, International Conference on Materials for Advanced Technologies ICMAT 2001 MRS-Singapore, Singapore, Singapore, 1-6th July, 2001 Invited
Proceeding
  1. H. Ohta, Y. Mune, K. Koumoto, T. Mizoguchi, and Y. Ikuhara, “Critical thickness for giant thermoelectric Seebeck coefficient of 2DEG confined in SrTiO3/SrTi0.8Nb0.2O3 superlattices”, Thin Solid Films 516, 5916 (2008).
  2. T, Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of ScAlMgO4 epitaxial thin films using ScGaO3(ZnO)m buffer layers and its application to lattice-matched buffer layer for ZnO epitaxial growth”, Thin Solid Films 516, 5842 (2008).
  3. Y. Mune, H. Ohta, T. Mizoguchi, Y. Ikuhara, and K. Koumoto, Mater. Res. Soc. Symp. Proc. 1044, U09-05 (2008).
  4. Y. Nakanishi, H. Ohta, T. Mizoguchi, Y. Ikuhara, and K. Koumoto, Mater. Res. Soc. Symp. Proc. 1044, U09-06 (2008).
  5. K. Sugiura, H. Ohta, and K. Koumoto, “Thermoelectric performance of epitaxial thin films of layered cobalt oxides grown by reactive solid-phase epitaxy with topotactic ion-exchange methods”, Int. J. Appl. Ceram. Technol. 4, 308 (2007).
  6. K-H. Lee, Y-F. Wang, S-W. Kim, H. Ohta, and K. Koumoto, “Thermoelectric properties of Ruddlesden-Popper phase n-type semiconducting oxides: La-, Nd-, and Nb-doped Sr3Ti2O7”, Int. J. Appl. Ceram. Technol. 4, 326 (2007).
  7. Y. Ogo, K. Nomura, H. Yanagi, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, “Growth and structure of heteroepitaxial thin films of homologous compounds RAO3(MO)m by reactive solid-phase epitaxy: Applicability to a variety of materials and epitaxial template layers”, Thin Solid Films 496, 64 (2006).
  8. Y. Takeda, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Growth of epitaxial ZnO films on lattice-matched buffer layer: Application of InGaO3(ZnO)6 single-crystalline thin film”, Thin Solid Films 486, 28 (2005).
  9. A. Takagi, K. Nomura, H. Ohta, H. Tanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4”, Thin Solid Films 486, 38 (2005).
  10. T. Kamiya, K. Ueda, H. Hiramatsu, H. Kamioka, H. Ohta, M. Hirano, and H. Hosono, “Two-dimensional electronic structure and multiple excitonic states in layered oxychalcogenide semiconductors, LaCuOCh (Ch = S, Se, Te): Optical properties and relativistic ab intio study”, Thin Solid Films 486, 98 (2005).
  11. H. Hiramatsu, K. Ueda, H. Ohta, M. Hirano, T. Kamiya, and H. Hosono, “Wide gap p-type degenerate semiconductor: Mg-doped LaCuOSe”,Thin Solid Films 445, 304 (2003).
  12. H. Ohta, M. Kamiya, T. kamiya, M. Hirano, and H. Hosono, “UV-detector based on pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO/n-ZnO”, Thin Solid Films 445, 317 (2003).
  13. K. Nomura, H. Ohta, K. Ueda, T. Kamiy, M. Hirano, and H. Hosono, “Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs”, Thin Solid Films 445, 322 (2003).
  14. H. Ohta, K. Nomura. H. Hiramatsu, T. Suzuki, K. Ueda, M. Orita, M. Hirano, Y. Ikuhara, and H. Hosono, Mater. Res. Soc. Symp. Proc. 747, 257 (2003).
  15. H. Hiramatsu, K. Ueda, H. Ohta, M. Orita, M. Hirano, and H. Hosono, “Preparation of transparent p-type (La1-xSrxO)CuS thin films by an rf sputtering technique”, Thin Solid Films 411, 125 (2002).
  16. K. Nomura, H. Ohta, K. Ueda, M. Orita, M. Hirano, and H. Hosono, “Novel film growth technique of single crystalline In2O3(ZnO)m(m=integer) homologous compound”, Thin Solid Films 411, 147 (2002).
  17. H. Ohta, M. Orita, M. Hirano and H. Hosono, Key Eng. Mater. 214-215, 75 (2002).
  18. M. Orita, H. Hiramatsu, H. Ohta, M. Hirano, and H. Hosono, “Preparation of highly conductive deep ultraviolet transparent β-Ga2O3 thin film”, Thin Solid Films 411, 134 (2002).
  19. H. Ohta, M. Orita, H. Hiramatsu, K. Nomura, M. Miyakawa, K. Ueda, M. Hirano, H. Hosono, Proceedings of CIMTEC 2002 10th International Ceramics Congress and 3rd Forum on New Materials, Ed. By P. Vincenzini Part D, 983 (2002).
  20. H. Ohta, M. Orita, M. Hirano, H. Hosono, Mater. Res. Soc. Symp. Proc. 666, F3.15.1 (2001).
  21. H. Ohta, M. Orita, M. Hirano, H. Hosono, H. Kawazoe and H. Tanji, Mater. Res. Soc. Symp. Proc. 623, 253 (2000).
  22. H. Ohta, H. Tanji, M. Orita, H. Hosono and H. Kawazoe, Mater. Res. Soc. Symp. Proc. 570, 309 (1999).

 

Patent
  1. PCT/JP2007/059766
    THERMOELECTRIC MATERIAL, INFRARED SENSOR AND IMAGE FORMING DEVICE
    Hiromichi OHTA, Kunihito KOUMOTO, Yoriko MUNE
  2. PCT/JP2005/003273
    AMORPHOUS OXIDE AND THIN FILM TRANSISTOR
    Hideo HOSONO, Masahiro HIRANO, Hiromichi OTA, Toshio KAMIYA, Kenji NOMURA
  3. PCT/JP2003/001756
    LnCuO(S, Se, Te) MONOCRYSTALLINE THIN FILM, ITS MANUFACTURING METHOD, AND OPTICAL DEVICE OR ELECTRONIC DEVICE USING THE MONOCRYSTALLINE THIN FILM
    Hideo HOSONO, Masahiro HIRANO, Hiromichi OTA, Masahiro ORITA, Hidenori HIRAMATSU, Kazushige UEDA
  4. PCT/JP2002/011404
    NATURAL SUPERLATTICE HOMOLOGOUS SINGLE CRYSTAL THIN FILM, METHOD FOR PREPARATION THEREOF, AND DEVICE USING SAID SINGLE CRYSTAL THIN FILM
    Hideo HOSONO, Hiromichi OTA, Masahiro ORITA, Kazushige UEDA, Masahiro HIRANO, Toshio KAMIYA
  5. PCT/JP2001/005928
    ULTRAVIOLET-TRANSPARENT CONDUCTIVE FILM AND PROCESS FOR PRODUCING THE SAME
    Hiromichi OTA, Masahiro HIRANO, Hideo HOSONO, Masahiro HIRANO
  6. PCT/JP2001/000465
    LIGHT EMITTING DIODE AND SEMICONDUCTOR LASER
    Hideo HOSONO, Hiromichi OTA, Masahiro ORITA, Kenichi KAWAMURA, Nobuhiko SARUKURA, Masahiro HIRANO
Award
  1. 2007 MRS Fall Meeting Symposium U Poster Award, Yoriko Mune, Hiromichi Ohta, Teruyasu Mizoguchi, Yuichi Ikuhara, and Kunihito Koumoto, “Origin of Giant Seebeck Coefficient for High Density 2DEGs Confined in the SrTiO3/SrTi0.8Nb0.2O3 Superlattices”, 26-30 Nov. 2007
  2. Best Oral Paper Award, 3rd International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-3), Hiromichi Ohta, Masao Kamiya, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, “UV-detector based on pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO/n-ZnO”, 10-11 April 2003