{"id":1229,"date":"2018-06-29T20:48:14","date_gmt":"2018-06-29T11:48:14","guid":{"rendered":"http:\/\/functfilm.es.hokudai.ac.jp\/english\/?p=1229"},"modified":"2019-01-18T12:29:16","modified_gmt":"2019-01-18T03:29:16","slug":"lecture-sponsored-by-jsap-hokkaido-branch","status":"publish","type":"post","link":"https:\/\/functfilm.es.hokudai.ac.jp\/english\/lecture-sponsored-by-jsap-hokkaido-branch\/","title":{"rendered":"Prof. Kookrin Char visited us"},"content":{"rendered":"<p>Date &amp; Time: June 28th, 2 pm &#8211; 3 pm<br \/>\nVenue: Seminar Room 1-3, RIES building 1F<br \/>\nTitle: Perovskite oxide heterostructures based on BaSnO<sub>3<\/sub><br \/>\nLecturer: Prof. Kookrin Char (Seoul National University)<br \/>\nSponsorship: JSAP Hokkaido branch<\/p>\n<p>A wide-bandgap perovskite oxide semiconductor BaSnO<sub>3<\/sub> was recently found to possess high mobility and excellent stability. Its single crystal mobility value of about 300 cm<sup>2<\/sup> V<sup>-1<\/sup> s<sup>-1<\/sup> in the doping range of 10<sup>19<\/sup>~10<sup>20<\/sup> cm<sup>-3<\/sup>, when n-type La dopants in place of Ba are used, is the highest among all the semiconductors.\u00a0 Furthermore, the oxygen diffusion constant in BaSnO<sub>3<\/sub> was measured to be several orders of magnitude lower than 3d transition metal perovskite oxides, demonstrating super stability of the material. Taking advantage of such properties, excellent field effect transistors were recently demonstrated using amorphous gate oxides (AlO<sub>x<\/sub> and HfO<sub>x<\/sub>) as well as high-k epitaxial gate oxides such as LaInO<sub>3<\/sub> and BaHfO<sub>3<\/sub>, which led to the development of an all-perovskite transparent high mobility field effect transistor. In addition, p-type doping by K in place of Ba is feasible and the pn-junctions made with K-doped BaSnO<sub>3<\/sub> and La-doped BaSnO<sub>3<\/sub> were demonstrated to exhibit near-ideal IV characteristics. Moreover, 2DEG behavior is found at the polar interface of BaSnO<sub>3<\/sub> and LaInO<sub>3<\/sub>. We will go over the parameters that control the 2DEG behavior and discuss the mechanism behind such behavior. In spite of these tremendous progresses, the device performances are currently limited by defects such as threading dislocations. Once all the major defects are removed, the perovskite oxide semiconductor BaSnO<sub>3<\/sub> system, especially when it is combined with other perovskite oxides, is expected to offer much more opportunities for science and technology.<br \/>\n<img loading=\"lazy\" class=\"aligncenter size-large wp-image-1232\" src=\"http:\/\/functfilm.es.hokudai.ac.jp\/english\/wp-content\/uploads\/sites\/2\/2018\/06\/20180628profchar-1024x768.jpg\" alt=\"20180628profchar\" width=\"1024\" height=\"768\" srcset=\"https:\/\/functfilm.es.hokudai.ac.jp\/english\/wp-content\/uploads\/sites\/2\/2018\/06\/20180628profchar-1024x768.jpg 1024w, https:\/\/functfilm.es.hokudai.ac.jp\/english\/wp-content\/uploads\/sites\/2\/2018\/06\/20180628profchar-300x225.jpg 300w, https:\/\/functfilm.es.hokudai.ac.jp\/english\/wp-content\/uploads\/sites\/2\/2018\/06\/20180628profchar-500x375.jpg 500w, https:\/\/functfilm.es.hokudai.ac.jp\/english\/wp-content\/uploads\/sites\/2\/2018\/06\/20180628profchar.jpg 1575w\" sizes=\"(max-width: 1024px) 100vw, 1024px\" \/><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Date &amp; Time: June 28th, 2 pm &#8211; 3 pm Venue: Seminar Room 1-3, RIES building 1F Title: Perovskite oxid&#8230;..<\/p>\n","protected":false},"author":2,"featured_media":1230,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":[],"categories":[1],"tags":[],"_links":{"self":[{"href":"https:\/\/functfilm.es.hokudai.ac.jp\/english\/wp-json\/wp\/v2\/posts\/1229"}],"collection":[{"href":"https:\/\/functfilm.es.hokudai.ac.jp\/english\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/functfilm.es.hokudai.ac.jp\/english\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/functfilm.es.hokudai.ac.jp\/english\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/functfilm.es.hokudai.ac.jp\/english\/wp-json\/wp\/v2\/comments?post=1229"}],"version-history":[{"count":3,"href":"https:\/\/functfilm.es.hokudai.ac.jp\/english\/wp-json\/wp\/v2\/posts\/1229\/revisions"}],"predecessor-version":[{"id":1412,"href":"https:\/\/functfilm.es.hokudai.ac.jp\/english\/wp-json\/wp\/v2\/posts\/1229\/revisions\/1412"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/functfilm.es.hokudai.ac.jp\/english\/wp-json\/wp\/v2\/media\/1230"}],"wp:attachment":[{"href":"https:\/\/functfilm.es.hokudai.ac.jp\/english\/wp-json\/wp\/v2\/media?parent=1229"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/functfilm.es.hokudai.ac.jp\/english\/wp-json\/wp\/v2\/categories?post=1229"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/functfilm.es.hokudai.ac.jp\/english\/wp-json\/wp\/v2\/tags?post=1229"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}