Publication (JSPS-NRF Bilateral Joint Research)
Collaboration result with Profs. Hyoungjeen Jeen (Pusan National Univ., Korea), Bin Feng, and Yuichi Ikuhara (Univ. Tokyo, Japan) has been published in Applied Physics Letters. This work was supported by Bilateral Joint Research Projects (JSPS) with Korea (NRF), Network Joint Research Center for Materials and Devices, Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance), and Grant-in-Aid for Scientific Research on Innovative Areas (2505) Nanoinformatics.
Publication
After the discovery of high electron mobility (~320 cm2 V−1 s−1) in the La-doped BaSnO3 single crystal in 2012 by Kim et al., it has been attracted growing attention how to fabricate La-doped BaSnO3 thin films showing high electron mobility. Although many researchers have already discussed the way i.e. reducing the lattice mismatch between the film and the substrate to increase the mobility, the achievable mobility is still low, due to the lack of fundamental research such as thickness dependence.
We report herein that the carrier mobility of the 2%-La-doped BaSnO3 (LBSO) films on (001) SrTiO3 and (001) MgO substrates strongly depends on the thickness whereas it is unrelated to the lattice mismatch (+5.4 % for SrTiO3, −2.3 % for MgO). Although we observed large differences in the lattice parameters, the lateral grain size (~85 nm for SrTiO3, ~20 nm for MgO), the surface morphology and the density of misfit dislocations, the mobility increased almost simultaneously with the thickness in both cases and saturated at ~100 cm2 V−1 s−1, together with the approaching to the nominal carrier concentration (=[2 % La3+]), clearly indicating that the behavior of mobility depends on the film thickness. The present results would be beneficial to understand the behavior of mobility and fruitful to further enhance the mobility of LBSO films.
Substrate | (001) SrTiO3 | (001) MgO |
Lattice mismatch | +5.4 % | −2.3 % |
Lattice parameter | Increased with thickness | Decreased with thickness |
Lateral grain size | ~85 nm | ~20 nm |
Misfit dislocation | Every 7.3 nm | Not periodical manner |
Electron transport | Both carrier concentration and mobility increased with thickness | <– Similar |