An ultraviolet light-emitting diode (LED) operating at room temperature was realized using a p-n heterojunction composed of transparent conductive oxides, p-SrCu₂O₂ and n-ZnO. Multilayered films prepared by a pulsed-laser deposition technique were processed by conventional photolithography with the aid of reactive ion etching to fabricate the LED device. A rather sharp emission band centered at 382 nm was generated when a forward bias voltage exceeding the turn-on voltage of 3 V was applied to the junction. The emission may be attributed to a transition associated with the electron-hole plasma of ZnO.