[11] Hyeyun Chung, Yeongdeuk Mun, Ahrong Jeong, Hyeonjun Kong, Mitsuki Yoshimura, Daegill Cho, Seyoung Kwon, Byung-Jun Hwang, Younghak Kim, Sang-Jin Lee, Sungkyun Park, Hiromichi Ohta*, and Hyoungjeen Jeen*, “Electrochemical Switching of Heat, Charge, and Light in an Oxygen-Sponge Cobaltite, PrBaCo₂O_5+x“, Chem. Mater. 38, 7802-7810 (2026). (July 30, 2026) (DOI: 10.1021/acs.chemmater.6c00926)

[10] Hikaru Sadahira, Prashant Ghediya, Hyeonjun Kong, Akira Miura, Yasutaka Matsuo, Hiromichi Ohta*, and Yusaku Magari*, “Indium Hydroxide Ceramic Targets: A Breakthrough in High-Mobility Thin-Film Transistor Technology”, ACS Appl. Electron. Mater. 7, 6952-6959 (2025). (DOI: 10.1021/acsaelm.5c00829)

[9] Ahrong Jeong, Mitsuki Yoshimura, Hyeonjun Kong, Zhiping Bian, Jason Tam, Bin Feng, Yuichi Ikuhara, Takashi Endo, Yasutaka Matsuo, and Hiromichi Ohta*, “High-performance solid-state electrochemical thermal switches with earth-abundant cerium oxide”, Science Adv. 11, eads6137 (2025). (January 1, 2025) (DOI: 10.1126/sciadv.ads6137)

[8] Hyeonjun Kong, Gowoon Kim, Joonhyuk Lee, Jinhyung Cho, and Hyoungjeen Jeen*, “Effect of thermal annealing on nitrogen implanted epitaxial Fe films”, Curr. Appl. Phys. 24, 7-11 (2021). (DOI: 10.1016/j.cap.2021.01.008)

[7] Hyeonjun Kong, Han Sol Kwon, Hyegyeong Kim, Gwang-Soo Jeen, Jaekwang Lee, Joonhyuk Lee, Yun Seok Heo, Jinhyung Cho, and Hyoungjeen Jeen*, “Reductive-annealing-induced changes in Mo valence states on the surfaces of MoO₃ single crystals and their high temperature transport”, Curr. Appl. Phys. 19, 1379-1382 (2019). (DOI: 10.1016/j.cap.2019.09.001)

[6] Gowoon Kim, Yu-Qiao Zhang, Taewon Min, Hoyoung Suh, Jae Hyuck Jang, Hyeonjun Kong, Joonhyuk Lee, Jaekwang Lee, Tae-Yeol Jeon, Inwon Lee, Jinhyung Cho, Hiromichi Ohta*, and Hyoungjeen Jeen*, “Extremely Light Carrier-Effective Mass in a Distorted Simple Metal Oxide”, Adv. Electron. Mater. 5, 1800504 (2019). (DOI: 10.1002/aelm.201800504)

[5] Mitali Swain, Hyeonjun Kong, Joonhyuk Lee, Sungkyun Park, and Hyoungjeen Jeen, “Growth of epitaxial Fe_0.5Ni_0.5 thin films and their magnetic properties”, Mater. Res. Express 5, 116104 (2018). (DOI: 10.1088/2053-1591/aade2e)

[4] Hyeonjun Kong, Eunyoung Ahn, Gowoon Kim, Sangkyun Ryu, Sungkyun Park, Hyoungjeen Jeen*, Tae-Yeol Jeon, Younghak Kim, and Jinhyung Cho, “Thickness Dependence on the Magnetism in Mo-Capped Epitaxial Fe Films”, J. Kor. Phys. Soc. 73, 622-626 (2018). (DOI: 10.3938/jkps.73.622)

[3] Gowoon Kim, Hyeonjun Kong, Dongjin Kim, Hosu Lee, Hyoungjeen Jeen*, Hosun Lee, Mijung Jeen, Sungwook Mhin, “Thermally-Driven Unequal Cation Vacancy Formation and Its Effect on the Dielectric Properties in K_0.5Na_0.5NbO₃ Ceramics”, J. Kor. Phys. Soc. 71, 979-985 (2017). (DOI: 10.3938/jkps.71.979)

[2] Su Gyeong Kim, Kwang-Won Jeon, Jung-Goo Lee, Hyeonjun Kong, Hyoungjeen Jeen, Se-Hun Kwon, and Youn-Kyoung Baek*, “High Purity α”-Fe₁₆N₂ Particles with Tunable Sphere Structures via Spray Drying Method”, J. Magnetics 22, 590-595 (2017). (DOI: 10.4283/JMAG.2017.22.4.590)

[1] Hyeonjun Kong, Eunyoung Ahn, Sangkyun Ryu, Ji Woong Kim, Jinhyung Cho, Sungkyun Park, Dongjin Kim, Gwang-Soo Jeen, Inwon Lee, and Hyoungjeen Jeen*, “Growth and physical properties of large MoO₃ single crystals”, J. Mater. Sci. 51, 8928-8934 (2016). (DOI: 10.1007/s10853-016-0144-9)

[8] Hyeonjun Kong, Ying-Hao Chu, Yasutaka Matsuo, and Hiromichi Ohta, “Flexible In₂O₃ Thin-Film Transistors with High-Mobility (~75 cm² V^-1 s^-1)”, 32nd International Workshop on Oxide Electronics (iWOE32), Sendai, Japan, September 27-30, 2026 (Poster).

[7] Hyeonjun Kong, Ying-Hao Chu, Yasutaka Matsuo, and Hiromichi Ohta, “Flexible In₂O₃ TFTs with High-Mobility of ~75 cm²/Vs”, 2026年 第87回 応用物理学会秋季学術講演会, 北海道大学 札幌キャンパス, 札幌, 2026年9月8日-11日.

[6] Hyeonjun Kong, Ying-Hao Chu, Yasutaka Matsuo, and Hiromichi Ohta, “Flexible In₂O₃ Thin-Film Transistors with High-Mobility of ~75 cm²/Vs”, 11th International Congress on Ceramics (ICC’11) Symposium S9-2, Sapporo, Japan, September 6-11, 2026.

[5] Hyeonjun Kong, Hikaru Sadahira, Akira Miura, Yasutaka Matsuo, Ying-Hao Chu, and Hiromichi Ohta, “Controlled hydrogen incorporation in In₂O₃ thin-film transistors using In(OH)₃ ceramic targets and their feasibility on flexible mica substrates”, The 5th Workshop on Functional Materials Science (FMS2026), The University of Tokyo, Tokyo, Japan, March 10, 2026. Poster Award

[4] Hyeonjun Kong, Hikaru Sadahira, Akira Miura, Yasutaka Matsuo, Hiromichi Ohta, “Safe hydrogen incorporation into In2O3 thin films using In(OH)₃ ceramic targets for high-mobility oxide thin-film transistors”, Japan–Taiwan–India Symposium on Materials & Information Science for Future Electronics Jointed with the 26th RIES–HOKUDAI International Symposium “共”[kyou] & 5+2 Joint Symposium, Sapporo, November 26-27, 2025 (Poster)

[3] Hyeonjun Kong, Hikaru Sadahira, Akira Miura, Yasutaka Matsuo, and Hiromichi Ohta, “High-mobility oxide thin-film transistors toward next-generation displays”, 第11回 北大・部局横断シンポジウム, 北海道大学, 札幌, 2025年10月2日 (Poster).

[2] Hyeonjun Kong, Ahrong Jeong, Mitsuki Yoshimura, Jason Tam, Bin Feng, Yuichi Ikuhara, and Hiromichi Ohta, “Improvement of Electrochemical Reduction Efficiency for CeO₂-based Thermal Transistors by using SrCoO_x Capping Layers”, 日本セラミックス協会 2025年年会, 静岡大学浜松キャンパス, 2025.3.5-7.

[1] Hyeonjun Kong, Jason Tam, Zhiping Bian, Mitsuki Yoshimura, Ahrong Jeong, Bin Feng, Yuichi Ikuhara, Yusaku Magari, Hiromichi Ohta, “Effect of Capping Layers on CeO2-based Electrochemical Thermal Transistors”, 第85回 応用物理学会秋季学術講演会, 朱鷺メッセほか2会場, オンライン, 2024年9月16日-20日.

[1] “北大，安価で普遍的な材料で超高性能熱スイッチ実現”, OPTRONICS ONLINE (January 6, 2025)

[2] “酸化セリウムを使った高性能熱スイッチを開発――熱伝導率切り替え幅が倍増　北海道大学”, fabcross for エンジニア (January 7, 2025)

[3] “北大、安価な材料で従来の2倍以上も高性能な「熱スイッチ」を開発”, マイナビニュース (January 7, 2025)

[4] “北大、安価な材料で従来の2倍以上も高性能な「熱スイッチ」を開発”, Mapionニュース (January 7, 2025)

[5] “北大、安価な材料で従来の2倍以上も高性能な「熱スイッチ」を開発”, Biglobeニュース (January 7, 2025)

[6] “酸化セリウムを活用し超高性能熱スイッチを開発　今後は「熱ディスプレイ」を試作”, MONOist (January 8, 2025)

[7] “Hokkaido University Develops Cerium Oxide Thermal Switches”, Asia Education Review (January 3, 2025)

[8] “Japanese Scientists Innovate Thermal Switches with Sustainable New Material”, SLSV Sustainability Solutions Network (January 2, 2025)

[9] “Japanese scientists use novel material to make thermal switches efficient, sustainable”, Interesting Engineering (January 1, 2025)

[10] “Cerium Oxide Switches Boost Heat Management”, Mirage (January 2, 2025)

[11] “Cerium Oxide Switches Transform Heat Management”, Mirage (January 2, 2025)

[12] “Transforming Thermal Control: Breakthrough Cerium Oxide Thermal Switches Set New Standards in Heat Management”, Scienmag (January 1, 2025)

[13] “Transforming Thermal Control: Breakthrough Cerium Oxide Thermal Switches Set New Standards in Heat Management”, Bioengineer (January 1, 2025)

[14] “Sustainable and Efficient Thermal Switching with Cerium Oxide Thin Films”, AZO materials (January 2, 2025)

[15] “Durable, Efficient, Sustainable: The Rise of Cerium Oxide Thermal Switches”,  Innovations Report (January 2, 2025)

[16] “Langlebig, Effizient, Nachhaltig: Der Aufstieg von Ceriumoxid-Thermoschaltern”, Innovations Report (January 2, 2025)

[17] “High-performance cerium oxide thermal switches improve heat flow control”,  Tech Xplore (January 2, 2025)

[18] “Advancements In Cerium Oxide Thermal Switches”, Electronics For You (January 3, 2025)

[19] “Les switches thermiques au cérium établissent de nouveaux records de performance”, Enerzine (January 5, 2025)

[20] “Revolutionizing Heat Management with High-Performance Cerium Oxide Thermal Switches”, Asia Research News (January 1, 2025)

[21] “Japanese Scientists Innovate Thermal Switches with Sustainable New Material”, Indian Defense Review (January 1, 2025)

[22] “Game-Changing Thermal Switches Boost Energy Efficiency”, SciTechDaily (January 2, 2025)

[23] “Revolutionary Thermal Switches: The Future of Energy Efficiency! Is Your Energy Going to Waste?”, Naseba (January 1, 2025)

[24] “High-performance cerium oxide thermal switches improve heat flow control”,  GROUND News (January 3, 2025)

[25] “Revolutionary Cerium Oxide Thermal Switches Pave the Way for Sustainable Energy Efficiency”, Innovation Laboratories (January 3, 2025)

[26] “Japanese Researchers Introduce Thermal Switches Using Eco-Friendly Cerium Oxide”, Industry Tap (January 6, 2025)

[27] “北大、全固体熱スイッチの切り換え幅2倍　酸化セリウムで熱伝導性増減”, 日刊工業新聞 (January 13, 2025)

[28] “熱ディスプレー実現へ…北大、全固体熱スイッチの切り換え幅2倍”, ニュースイッチ（日刊工業新聞）(January 14, 2025)

[29] “熱ディスプレー実現へ…北大、全固体熱スイッチの切り換え幅2倍”, Yahoo! JAPANニュース (January 14, 2025)

[30] “熱ディスプレー実現へ…北大、全固体熱スイッチの切り換え幅2倍”, gooニュース (January 14, 2025)

[31] “熱ディスプレー実現へ…北大、全固体熱スイッチの切り換え幅2倍”, dmenuニュース (January 14, 2025)

[32] “ありふれた材料で「高性能熱スイッチ」を開発　熱制御デバイスの実用化に弾み”, EE Times Japan (January 15, 2025)

[33] “北大など、市販材料で高性能熱スイッチ　希少金属不要”, NIKKEI Tech Foresight (January 21, 2025)

[34] “北海道大学の研究、熱スイッチ技術の革新で未来の製造業を照らす”, newji 製造業トピック (January 22, 2025)

[35] “電界効果移動度約90cm2/V・sの高性能薄膜トランジスタの作製に成功”, MONOist (2025.08.29)

[36] “北大、IGZOより高性能な薄膜トランジスタ　安全に作製”, NIKKEI Tech Foresight (2025.09.01)

[37] “北大，簡便な圧力制御で高性能薄膜トランジスタ開発”, OPTRONICS online (2025.08.21)

[38] “北海道大学、水酸化インジウム原料・水素ガス不使用で移動度約90cm2/V・sのディスプレイ用TFT作製”, アペルザニュース (2025.09.17)

[39] “電界効果移動度約 90cm2/V・s の高性能薄膜トランジスタの作製に成功”, TechEyesOnline (2025.08.29)

[40] “安全かつ簡便に作れる高性能薄膜トランジスタ～水素ガス不要で、電界効果移動度は従来比10倍～”, Tii技術情報 (2025.08.20)

[3] Hyeonjun Kong, Poster Award, “High-mobility In₂O₃ TFTs with safely incorporated hydrogen via In(OH)₃ ceramic targets”, The 5th Workshop on Functional Materials Science (FMS2026), The University of Tokyo, Tokyo, Japan, March 10, 2026. Certificate

[2] Ahrong Jeong, Hyeonjun Kong, Hiromichi Ohta*, 2025 Ceramographic Exhibit,Scanning Probe Microscopy category, First place: “Fireworks: Spherulitic crystallization in In₂O₃”

[1] Best Poster Award, International Symposium on Magnetism and Magnetic Materials, Nov. 23-25, 2016.

[1] 太田裕道, 曲 勇作, ゲディア プラシャント ラマニクラル, 定平 光, コン ヒョンジュン, “水素化酸化インジウム膜形成用のセラミックターゲットとその製造方法、およびセラミックターゲットを用いた薄膜トランジスタの製造方法”, 特願2024-150613, 2024年9月2日出願