[2] Weikun Zhou, Lizhikun Gong, Ren Mitsuya, Diwen Chen, Hiromichi Ohta, and Tsukasa Katayama*, “Water-soluble CaO sacrificial layer heteroepitaxially grown on yttria-stabilized zirconia substrate for large ferroelectric BaTiO₃ sheets”, in press

[1] Ahrong Jeong, Mitsuki Yoshimura, Hyeonjun Kong, Zhiping Bian, Jason Tam, Bin Feng, Yuichi Ikuhara, Takashi Endo, Yasutaka Matsuo, and Hiromichi Ohta*, “High-performance solid-state electrochemical thermal switches with earth-abundant cerium oxide”, in press

[11] Yuzhang Wu, Prashant R. Ghediya, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta*, and Yusaku Magari*, “Thermopower Modulation Analyses of Effective Channel Thickness for Zn-incorporated In₂O₃-based Thin-Film Transistors”, Jpn. J. Appl. Phys. 63, 126501 (2024). (DOI: 10.35848/1347-4065/ad971b) International collaboration, Crossover Alliance Collaboration, Intra-institute collaboration

[10] Binjie Chen, Jinghuang Lin, Bin Feng, Yuichi Ikuhara, Hiromichi Ohta, and Tsukasa Katayama*, “Unusual crystal orientation in hexagonal HoFeO₃ multiferroic films and the effect on magnetism”, Cryst. Growth Des. 24, 8439-8444 (2024). (October 3, 2024) (DOI: 10.1021/acs.cgd.4c00930)

[9] Lizhikun Gong, Atsushi Taguchi, Weikun Zhou, Ren Mitsuya, Hiromichi Ohta, and Tsukasa Katayama*, “Ferroelectric BaTiO₃ Freestanding Sheets for Ultra-High-Speed Light-Driven Actuator”, ACS Appl. Mater. Interfaces 16, 54146-54153 (2024). (September 27, 2024) (DOI: 10.1021/acsami.4c10044) Intra-institute collaboration

[8] Prashant R. Ghediya, Yusaku Magari*, Hikaru Sadahira, Takashi Endo, Mamoru Furuta, Yuqiao Zhang, Yasutaka Matsuo, and Hiromichi Ohta*, “Reliable operation in high-mobility indium oxide thin film transistors”, Small Methods 2400578 (2024). (August 3, 2024) (DOI: 10.1002/smtd.202400578) International collaboration, Domestic collaboration, Crossover Alliance Collaboration, Intra-institute collaboration, Hokkaido University, Kochi University of Technology, RIES

[7] Yuzhang Wu, Yusaku Magari*, Prashant Ghediya, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta*, “High-mobility and High-reliability Coexistence in Zn-incorporated Amorphous In₂O₃-based Thin-Film Transistors”, Jpn. J. Appl. Phys. 63, 076504 (2024). (July 25, 2024) (DOI: 10.35848/1347-4065/ad5ee6) International collaboration, Crossover Alliance Collaboration, Intra-institute collaboration

[6] Zhiping Bian, Mitsuki Yoshimura, Ahrong Jeong, Haobo Li, Takashi Endo, Yasutaka Matsuo, Yusaku Magari, Hidekazu Tanaka, Hiromichi Ohta*, “Solid-State Electrochemical Thermal Switches with Large Thermal Conductivity Switching Widths”, Adv. Sci. 11, 2401331 (2024). (June 25, 2024) (DOI: 10.1002/advs.202401331) Open access,  Crossover Alliance Collaboration, Intra-institute collaboration, Hokkaido University, Osaka University, RIES, SANKEN, ERESTAGE LAB’s YouTube movie

[5] Hao-Bo Li*, Zhiping Bian, Mitsuki Yoshimura, Kohei Shimoyama, Chengchao Zhong, Keiji Shimoda, Azusa N. Hattori, Kunihiko Yamauchi, Ikutaro Hamada, Hiromichi Ohta*, Hidekazu Tanaka*, “Wide-range thermal conductivity modulation based on protonated nickelate perovskite oxides”, Appl. Phys. Lett. 124, 191901 (2024). (May 8, 2024) (DOI: 10.1063/5.0201268)  Crossover Alliance Collaboration

[4] Lizhikun Gong, Ko Marunouchi, Akira Chikamatsu, Hiromichi Ohta, and Tsukasa Katayama*, “Large tensile-strained BaTiO₃ films grown on lattice-mismatched La-doped BaSnO₃ bottom electrode”, CrystEngComm 26, 2765 (2024). (April 24, 2024) (DOI: 10.1039/D4CE00197D) Network Joint Research Center for Materials and Devices

[3] Ko Marunouchi, Lizhikun Gong, Hiromichi Ohta, and Tsukasa Katayama*, “High-concentration doping effects of aliovalent Al and Ga on ferroelectric properties of BaTiO₃ Films”, Thin Solid Films 796, 140339 (2024). (April 16, 2024) (DOI: 10.1016/j.tsf.2024.140339)

[2] Yaoming Liu, Binjie Chen, Yosuke Hamasaki, Lizhikun Gong, Hiromichi Ohta, and Tsukasa Katayama*, “Magnetic Phase Transition-Induced Modulation of Ferroelectric Properties in Hexagonal RFeO₃ (R = Tb and Ho)”, ACS Appl. Mater. Interfaces 16, 17832–17837 (2024). (April 1, 2024) (DOI: 10.1021/acsami.4c02475) Domestic Collaboration

[1] Morito Namba, Hiroshi Takatsu, Hao-Bo Li, Kantaro Murayama, Ryo Terada, Qian Yang, Takahito Terashima, Hiromichi Ohta, and Hiroshi Kageyama*, “Pure Fluorine Intercalation into Brownmillerite Oxide Thin Films by using Ionic Liquid Gating”, Chem. Mater. 36, 2076-2084 (2024). (February 7, 2024) (DOI: 10.1021/acs.chemmater.3c03178) Domestic Collaboration

[1] 太田裕道, 寺崎一郎, 陳 亨秦, “TECHNICAL REPORT テクニカルレポート 実用的な熱電材料の単結晶化に成功 －毒性元素を使わない熱電変換の実現に向けて大きく前進－”, クリーンエネルギー 33, No. 7, 10-13 (2024).

[3] Ahrong Jeong, Mitsuki Yoshimura, Hyeonjun Kong, Zhiping Bian, Jason Tam, Bin Feng, Yuichi Ikuhara, Takashi Endo, Yasutaka Matsuo, Hiromichi Ohta*, “High-performance solid-state electrochemical thermal switches with earth-abundant cerium oxide”, Preprint at <https://arxiv.org/abs/2404.19385> (2024).

[2] Zhiping Bian, Mitsuki Yoshimura, Ahrong Jeong, Haobo Li, Takashi Endo, Yasutaka Matsuo, Yusaku Magari, Hidekazu Tanaka, Hiromichi Ohta*, “Solid-State Electrochemical Thermal Transistors with Large Thermal Conductivity Switching Widths”, Preprint at <https://arxiv.org/abs/2404.08307> (2024).

[1] Prashant R. Ghediya, Yusaku Magari*, Hikaru Sadahira, Takashi Endo, Mamoru Furuta, Yuqiao Zhang, Yasutaka Matsuo, and Hiromichi Ohta*, “Reliable operation in high-mobility indium oxide thin film transistors”, Preprint at <https://arxiv.org/abs/2404.03856> (2024).

[1] 片山 司, “高配向酸化物自立膜の合成と機能”, 日本表面真空学会東北・北海道支部 令和5年度学術講演会, 北海道大学（ハイブリッド）, 札幌市, 2024年3月6日-7日（招待講演）

[2] 曲 勇作, “高移動度酸化物TFTに関する最新の展開”, 一般財団法人 総合研究奨励会 透明酸化物光・電子材料研究会 第8回研究会「半導体、構造・電子状態の評価」(2024年4月19日: 2024年度第1回), 東京大学およびZoom, 2024年4月19日（招待講演）

[3] Hiromichi Ohta, “Solid-State Electrochemical Thermal Transistor based on Oxygen Sponge SrCoO_x (2 < x < 3)”, 2024 MRS Spring Meeting, Seattle, WN, April 22-26, 2024 (Invited).

[4] Hiromichi Ohta, “Solid-State Electrochemical Thermal Transistors”, Department Colloquium at Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, Berlin, Germany, June 11th, 2024 (Invited).

[5] Hiromichi Ohta, “Solid-State Electrochemical Thermal Transistors”, UNIST Special Seminar: Future Materials, UNIST, Korea, June 28, 2024 (Invited).

[6] Hiromichi Ohta, “Oxide-based Solid-State Electrochemical Thermal Transistors”, NANO KOREA 2024, KINTEX, Korea, July 3-5, 2024 (Invited).

[7] ジョンアロン, 吉村充生, 卞志平, コンヒョンジュン, Jason Tam, Bin Feng, 幾原雄一, 曲勇作, 遠堂敬史, 松尾保孝, 太田裕道, “酸化セリウム薄膜の電気化学酸化還元を利用した高性能熱トランジスタの開発”, 日本固体イオニクス学会 第18回 固体イオニクスセミナー, 茨城県つくば市 筑波山ホテル青木屋, 2024.9.2-4. (若手依頼講演)

[8] Hiromichi Ohta, “Solid-State Electrochemical Thermal Transistors”, Sakura Science Program, RIES, Hokkaido Univ., 2024.09.09 (Invited).

[9] 片山 司, “高配向ペロブスカイト酸化物自立膜の合成と機能”, 日本セラミックス協会 第37回 秋季シンポジウム, 名古屋大学, 2024.09.10-12. (招待講演)

[10] 太田裕道, “機能性酸化物の「機能」を引き出す薄膜成長とデバイス応用の可能性”, 応用物理学会 2024年(令和6年)秋季学術講演会, 朱鷺メッセほか2会場（新潟県新潟市）, 2024年9月16日-20日（分科内招待講演）

[11] 太田裕道, “全固体電気化学熱トランジスタの開発”, 金属学会 2024年秋期(第175回)講演大会, 大阪大学豊中キャンパス（大阪）, 2024年9月17日-20日（基調講演）

[12] Ahrong Jeong, “High-Performance Solid-State Electrochemical Thermal Transistor with Cerium Oxide Epitaxial Films”, BK21 Material Innovation Leading Platform Education and Research Group Overseas Expert Invitation Seminar hosted by Prof. Soonil Lee, Changwon National University, Changwon, Korea, September 24, 2024 (Invited)

[13] Hiromichi Ohta, “Oxide-based solid-state electrochemical thermal transistors”, Mini crossover seminar on functional materials 2024 ‘Haobo II’ -2024 Joint seminar of Tanaka-Lab, Kageyama-Lab, Ohta-Lab-, SANKEN, Osaka Univ., September 26, 2024 (Invited).

[14] Ahrong Jeong and Hiromichi Ohta, “High-performance solid-state electrochemical thermal switches with abundant cerium oxide”, 2024 IEEE IRDS and International Nano devices and Computing Conference (INC), Virtual, September 26, 2024 (Invited)

[15] Hiromichi Ohta, “Development of Oxide-based Solid-State Electrochemical Thermal Transistors”, The 8th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2024), Jeju Shinhwa World, Jeju, Korea, November 24-27, 2024.

[16] Hiromichi Ohta, Yusaku Magari, “TBA”, The 31st International Display Workshops (IDW ’24), Sapporo Convention Center, Sapporo, Japan, December 4-6, 2024 (Invited).

[1] Kungwan Kang, Fumiaki Kato, Akitoshi Nakano, Ichiro Terasaki, Hyoungjeen Jeen, and Hiromichi Ohta, “Fabrication and Thermoelectric Properties of Freestanding Ba_1/3CoO₂ Single Crystalline Films”, 第59回 応用物理学会北海道支部 / 第20回 日本光学会北海道支部 合同学術講演会, 北海道大学, 札幌市, 2024.1.6 – 7.

[2] 三津谷 怜, 龔 李治坤, 周 瑋琨, 太田裕道, 片山 司, “単結晶BiFeO₃自立膜の合成”, 第59回 応用物理学会北海道支部 / 第20回 日本光学会北海道支部 合同学術講演会, 北海道大学, 札幌市, 2024.1.6 – 7.

[3] 吉村充生, 李 好博, 卞 志平, ジョンアロン, 曲 勇作, 田中秀和, 太田裕道, “LaNiO₃薄膜を活性層とする全固体熱トランジスタの作製”, 第59回 応用物理学会北海道支部 / 第20回 日本光学会北海道支部 合同学術講演会, 北海道大学, 札幌市, 2024.1.6 – 7. 発表奨励賞 受賞

[4] Yuzhang Wu, Yusaku Magari, Prashant Ghediya, and Hiromichi Ohta, “Modulation of Electron Transport Properties of Amorphous In−Zn−O Films with Varied Zn Concentrations”, 第59回 応用物理学会北海道支部 / 第20回 日本光学会北海道支部 合同学術講演会, 北海道大学, 札幌市, 2024.1.6 – 7.

[5] 丸野内　洸, 太田裕道, 片山　司, “反応性固相エピタキシャル成長法によるPb₂MO₃F薄膜(M = Fe, In)の合成”, 第59回 応用物理学会北海道支部 / 第20回 日本光学会北海道支部 合同学術講演会, 北海道大学, 札幌市, 2024.1.6 – 7.

[6] 福地厚, 片瀬貴義, 太田裕道, “原子平坦アモルファスTaO_x薄膜を用いた電子シナプス素子動作原理の直接観察”, 日本表面真空学会　東北・北海道支部　令和5年度学術講演会, 北海道大学創成研究棟（ハイブリッド）, 2024.3.6-7.

[7] ジョンアロン, 卞 志平, 吉村充生, フウビン, 幾原雄一, 曲 勇作, 太田裕道, “大きな熱伝導率変化幅を示すCeO₂全固体電気化学熱トランジスタ”, 2024年 第71回 応用物理学会春季学術講演会, 東京都市大学 世田谷キャンパス,東京, 2024年3月22日-25日.

[8] 吉村充生, 李 好博, 卞 志平, ジョンアロン, 曲 勇作, 田中秀和, 太田裕道, “高電子熱伝導率LaNiO₃薄膜を活性層とする全固体熱トランジスタの作製”, 2024年 第71回 応用物理学会春季学術講演会, 東京都市大学 世田谷キャンパス,東京, 2024年3月22日-25日.

[9] 丸野内 洸, 近松 彰, 太田裕道, 片山 司, “反応性固相エピタキシャル成長法によるPb₂MO₃F薄膜(M = Fe, In)の合成”, 2024年 第71回 応用物理学会春季学術講演会, 東京都市大学 世田谷キャンパス,東京, 2024年3月22日-25日.

[10] Kungwan Kang, Diwen Chen, Masato Imaizumi, Akitoshi Nakano, Chuchu Yang, Yuqiao Zhang, Yusaku Magari, Takashi Endo, Bin Feng, Yasutaka Matsuo, Yuichi Ikuhara, Ichiro Terasaki, Hiromichi Ohta, “Difficulty of Bulk Ceramic Fabrication of Ba_1/3CoO₂ Showing High Thermoelectric ZT“, 2024年 第71回 応用物理学会春季学術講演会, 東京都市大学 世田谷キャンパス,東京, 2024年3月22日-25日.

[11] 小笠原颯平, Katelyn A. Kirchner, 木崎和郎, 田尻寛男, 小原真司, 太田裕道, John C. Mauro, 松尾保孝, “結晶基板を用いたアモルファスシリカ膜の構造制御”, 2024年 第71回 応用物理学会春季学術講演会, 東京都市大学 世田谷キャンパス,東京, 2024年3月22日-25日.

[12] Prashant Ghediya, Yusaku Magari, Takashi Endo, Mamoru Furuta, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta, “Reliable Device Operation in High-Mobility Indium Oxide Thin Film Transistors”, 2024年 第71回 応用物理学会春季学術講演会, 東京都市大学 世田谷キャンパス,東京, 2024年3月22日-25日.

[13] Yuzhang Wu, Yusaku Magari, Prashant R. Ghediya, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta, “Role of Zn Introduction in In₂O₃ TFTs −Suppression of Grain Boundary Scattering −”, 2024年 第71回 応用物理学会春季学術講演会, 東京都市大学 世田谷キャンパス,東京, 2024年3月22日-25日.

[14] Zhiping Bian, Mitsuki Yoshimura, Ahrong Jeong, Haobo Li, Takashi Endo, Yasutaka Matsuo, Yusaku Magari, Hidekazu Tanaka, Hiromichi Ohta, “Solid-State Electrochemical Thermal Transistors with Large Thermal Conductivity Switching Widths”, 2024年 第71回 応用物理学会春季学術講演会, 東京都市大学 世田谷キャンパス,東京, 2024年3月22日-25日.

[15] ジョンアロン, 卞 志平, 吉村充生, フウビン, 幾原雄一, 曲 勇作, 太田裕道, “CeO₂薄膜の電気化学酸化・還元－熱トランジスタの高性能化に向けて－”, 2024年 第71回 応用物理学会春季学術講演会, 東京都市大学 世田谷キャンパス,東京, 2024年3月22日-25日.

[16] Ahrong Jeong, Zhiping Bian, Mitsuki Yoshimura, Bin Feng, Yuichi Ikuhara, Yusaku Magari, Hiromichi Ohta, “Solid-State Electrochemical Thermal Transistors with Large Thermal Conductivity Switching Width”, 2024 MRS Spring Meeting, Seattle, WN, April 22-26, 2024. (Onsite Oral)

[17] S.-I. Ito, K. Kanahashi, H. Tanaka, B. Chen, H. Ohta and T. Takenobu, “Charge transport properties in electrochemically-doped conducting polymer PBTTT”, 26th International Conference on Science and Technology of Synthetic Electronic Materials, Dresden, Germany, June 23-28, 2024. Network Joint Research Center for Materials and Devices

[18] S. Ito, K. Kanahashi, H. Tanaka, B. Chen, H. Ohta and T. Takenobu1, “Temperature Dependence of Thermoelectric Properties in Electrochemically-Doped Conducting Polymer PBTTT”, 40th International & 20th European Conference on Thermoelectrics, Krakow, Poland, June 30 – July 4, 2024. Network Joint Research Center for Materials and Devices

[19] Ahrong Jeong, Mitsuki Yoshimura, Zhiping Bian, Jason Tam, Bin Feng, Yuichi Ikuhara, Yusaku Magari, Takashi Endo, Yasutaka Matsuo, and Hiromichi Ohta, “Solid-State Thermal Transistors with Switching Width of 9.5 W/mK”, NANO KOREA 2024, KINTEX, Korea, July 3-5, 2024 Oral.

[20] ジョンアロン, 吉村充生, 卞志平, コンヒョンジュン, Jason Tam, Bin Feng, 幾原雄一, 曲勇作, 遠堂敬史, 松尾保孝, 太田裕道, “酸化セリウム薄膜の電気化学酸化還元を利用した高性能熱トランジスタの開発”, 日本固体イオニクス学会 第18回 固体イオニクスセミナー, 茨城県つくば市 筑波山ホテル青木屋, 2024.9.2-4. (ポスター) 優秀ポスター賞 受賞

[21] 吉村充生, Ahrong Jeong, Jason Tam, 卞志平, Hyeonjun Kong, 久保田拓真, 曲勇作, Bin Feng, 幾原雄一, 大谷紀子, Jaekwang Lee, 太田裕道, “希土類酸化物薄膜の電気化学酸化還元による熱伝導率変調”, 日本固体イオニクス学会 第18回 固体イオニクスセミナー, 茨城県つくば市 筑波山ホテル青木屋, 2024.9.2-4.

[22] 吉村充生, 卞 志平, コンヒョンジュン, ジョンアロン, 曲 勇作, 太田裕道, “熱の伝わりやすさを制御する熱トランジスタ – ありふれた酸化セリウムが優れた活性層になる原因 -“, 第10回 北大部局横断シンポジウム, 北海道大学, オンライン, 2024.09.06.

[23] 定平 光, プラシャントゲディア, 太田裕道, 曲 勇作, “高移動度酸化物薄膜トランジスタに向けた水酸化インジウムPLDターゲットの開発”, 第10回 北大部局横断シンポジウム, 北海道大学, オンライン, 2024.09.06.

[24] 定平 光, プラシャントゲディア, 太田裕道, 曲勇作, “In(OH)₃をPLDターゲットとしたIn₂O₃薄膜トランジスタの作製”, 第85回 応用物理学会秋季学術講演会, 朱鷺メッセほか2会場, オンライン, 2024年9月16日-20日.

[25] ジョンアロン, 卞 志平, 吉村充生, コンヒョンジュン, 曲 勇作, 太田裕道, “CeO₂電気化学熱トランジスタ： 熱伝導率のCeO₂膜厚依存性”, 第85回 応用物理学会秋季学術講演会, 朱鷺メッセほか2会場, オンライン, 2024年9月16日-20日.

[26] Hyeonjun Kong, Jason Tam, Zhiping Bian, Mitsuki Yoshimura, Ahrong Jeong, Bin Feng, Yuichi Ikuhara, Yusaku Magari, Hiromichi Ohta, “Effect of Capping Layers on CeO2-based Electrochemical Thermal Transistors”, 第85回 応用物理学会秋季学術講演会, 朱鷺メッセほか2会場, オンライン, 2024年9月16日-20日.

[27] 吉村充生, タムジェイソン, 卞 志平, コンヒョンジュン, ジョンアロン, フウビン, 幾原雄一, 曲 勇作, 太田裕道, “希土類酸化物LnO₂ (Ln = Ce, Pr, Tb)を用いた全固体熱トランジスタの特性評価”, 第85回 応用物理学会秋季学術講演会, 朱鷺メッセほか2会場, オンライン, 2024年9月16日-20日.

[28] P. Ghediya, Y. Magari, H. Sadahira, T. Endo, M. Furuta, Y. Zhang, Y. Matsuo, and H. Ohta, “High-Mobility Indium Oxide Thin Film Transistors with High Reliability”, Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME 2024), Honolulu, HI, October 6-11, 2024.

[29] Hyeyun Chung, Jaehun Jeong, Yeongdeuk Mun, Ahrong Jeong, Hyeonjun Kong, Mitsuki Yoshimura, Hiromichi Ohta, Hyoungjeen Jeen, “Physical properties of oxygen-deficient and oxygen-rich PrBaCo₂O_5+δ thin films for thermal transistor applications”, 2024 KPS Fall Meeting, Yeosu Expo Convention Center, October 22-26, 2024. International collaboration, Network Joint Research Center for Materials and Devices

[30] Jaehun Jeong, Hyeyun Chung, Ahrong Jeong, Hyeonjun Kong, Mitsuki Yoshimura, Hiromichi Ohta, Hyoungjeen Jeen, “Creation of three different phases in SrFe_0.5Co_0.5O_x”, 2024 KPS Fall Meeting, Yeosu Expo Convention Center, October 22-26, 2024. International collaboration, Network Joint Research Center for Materials and Devices

[31] Weikun Zhou, Atsushi Taguchi, Ren Mitsuya, Diwen Chen, Hiromichi Ohta, Tsukasa Katayama, “Preparation and light-induced actuator properties of ferroelectric PLZT freestanding sheet”, 第60回応用物理学会北海道支部/第21回日本光学会北海道支部合同学術講演会, 北海道釧路市, 2024.11.2-3.

[32] 丸野内洸, 新津甲大, 近松彰, 太田裕道, 片山司, “強誘電酸フッ化物Pb₂FeO₃F薄膜”, 第60回応用物理学会北海道支部/第21回日本光学会北海道支部合同学術講演会, 北海道釧路市, 2024.11.2-3.

[33] 三津谷怜, 周瑋琨, 田口敦清, 太田裕道, 片山司, “光で大きく速く繰り返し変形するBiFeO₃自立膜”, 第60回応用物理学会北海道支部/第21回日本光学会北海道支部合同学術講演会, 北海道釧路市, 2024.11.2-3.

[34] Diwen Chen, Weikun Zhou, Ren Mitsuya, Hiromichi Ohta, Tsukasa Katayama, “Preparation of BaTiO₃ ferroelectric sheets using CaO sacrificial layer and Al₂O₃ substrate”, 第60回応用物理学会北海道支部/第21回日本光学会北海道支部合同学術講演会, 北海道釧路市, 2024.11.2-3.

[35] 定平光, プラシャントゲディア, コンヒョンジュン, 三浦章, 太田裕道, 曲 勇作, “高移動度薄膜トランジスタ用In(OH)₃焼結体ターゲット”, 第60回応用物理学会北海道支部/第21回日本光学会北海道支部合同学術講演会, 北海道釧路市, 2024.11.2-3.

[36] 定平光, プラシャントゲディア, コンヒョンジュン, 三浦章, 太田裕道, 曲 勇作, “高移動度薄膜トランジスタ作製用 In(OH)₃焼結体ターゲットの開発”, 令和6年度 日本セラミックス協会東北北海道支部 研究発表会, 札幌コンベンションセンター, 2024.11.11-12. (口頭)

[37] 三津⾕怜, 周瑋琨, ⽥口敦清, 太⽥裕道, ⽚山司, “光で⼤きく速く繰り返し変形するBiFeO₃自立膜”, 令和6年度 日本セラミックス協会東北北海道支部 研究発表会, 札幌コンベンションセンター, 2024.11.11-12. (ポスター)

[38] 久保田拓真, 吉村充生, コンヒョンジュン, ジョンアロン, 太田裕道, “Ce-Tb-O系固溶体薄膜を活性層とする全固体電気化学熱トランジスタの作製と評価”, 令和6年度 日本セラミックス協会東北北海道支部 研究発表会, 札幌コンベンションセンター, 2024.11.11-12. (ポスター)

[39] Ahrong Jeong, Zhiping Bian, Mitsuki Yoshimura, Hyeonjun Kong, Jason Tam, Bin Feng, Yuichi Ikuhara, Yusaku Magari, Takashi Endo, Yasutaka Matsuo, and Hiromichi Ohta, “Large Thermal Conductivity Reduction of Electrochemically Reduced Cerium Oxide – A Good Candidate Active Material for Solid-State Thermal Transistors”, The 8th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2024), Jeju Shinhwa World, Jeju, Korea, November 24-27, 2024.

[40] Noriko Otani and Hiromichi Ohta, “AI Estimation of Active Materials for Solid-state Thermal Transistors – How to Select Good Active Materials with Large Thermal Conductivity Switching Width -“, The 8th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2024), Jeju Shinhwa World, Jeju, Korea, November 24-27, 2024. Network Joint Research Center for Materials and Devices

[41] ジョンアロン, 吉村充⽣, コンヒョンジュン, 卞志平, Jason Tam, Bin Feng, 幾原雄⼀, 遠堂敬史, 松尾保孝, 太⽥裕道, “地球上に豊富に存在する酸化セリウムを使⽤した⾼性能固体電気化学熱スイッチ”, 第50回固体イオニクス討論会, 千里ライフサイエンスセンター（大阪府豊中市）, 2024年12月9日-11日.[41]

[42] Weikun Zhou, Atsushi Taguchi, Ren Mitsuya, Diwen Chen, Hiromichi Ohta, Tsukasa Katayama, “Preparation and light-induced actuator properties of ferroelectric PLZT freestanding sheet”, The 25^th RIES-HOKUDAI International Symposium 緯[i], Clark Memorial Student Center, Hokkaido University, December 10, 2024 (Poster).

[43] Diwen Chen , Weikun Zhou , Ren Mitsuya , Hiromichi Ohta , Tsukasa Katayama, “Preparation of BaTiO₃ ferroelectric sheets using CaO sacrificial layer and Al₂O₃ substrate”, The 25^th RIES-HOKUDAI International Symposium 緯[i], Clark Memorial Student Center, Hokkaido University, December 10, 2024 (Poster).

[44] Kungwan Kang, Diwen Chen, Chuchu Yang, Yuqiao Zhang, Yusaku Magari, Takashi Endo, Bin Feng, Yasutaka Matsuo, Yuichi Ikuhara and Hiromichi Ohta, “Origin of Thermal Instability for Thermoelectric Ba_1/3CoO₂: Thermal Decomposition into Metallic Phase and Insulator Phase”, The 25^th RIES-HOKUDAI International Symposium 緯[i], Clark Memorial Student Center, Hokkaido University, December 10, 2024 (Poster).

[45] Hikaru Sadahira, Yusaku Magari, Prashant Ghediya, Hyeonjun Kong, Akira Miura, Yasutaka Matsuo, and Hiromichi Ohta, “Development of Indium Hydroxide Ceramic Target for High-Mobility Oxide Semiconductor Thin-Film Transistors -Stepped Closer to Practical Application for Next Generation Displays-”, The 25^th RIES-HOKUDAI International Symposium 緯[i], Clark Memorial Student Center, Hokkaido University, December 10, 2024 (Poster). Poster Award

[46] Hyeonjun Kong, Ahrong Jeong, Mitsuki Yoshimura, Jason Tam, Bin Feng, Yuichi Ikuhara, and Hiromichi Ohta, “Electrochemical Reduction of an Oxide Ion Conductor, Gd-doped CeO₂ using an Oxygen Protection Electrode”, The 25^th RIES-HOKUDAI International Symposium 緯[i], Clark Memorial Student Center, Hokkaido University, December 10, 2024 (Poster).

[47] Ko Marunouchi, Kodai Niitsu, Akira Chikamatsu, Hiromichi Ohta, Tsukasa Katayama, “Synthesis and properties of Pb₂FeO₃F Thin Films”, The 25^th RIES-HOKUDAI International Symposium 緯[i], Clark Memorial Student Center, Hokkaido University, December 10, 2024 (Poster).

[48] Ren Mitsuya, Weikun Zhou, Atsushi Taguchi, Hiromichi Ohta, Tsukasa Katayama, “BiFeO₃ Freestanding Film Under Light Irradiation”, The 25^th RIES-HOKUDAI International Symposium 緯[i], Clark Memorial Student Center, Hokkaido University, December 10, 2024 (Poster).

[1] “全固体熱トランジスタの制御幅3.5倍…北⼤、廃熱の高⾼度利用⽤提案”, 日刊工業新聞（2024.07.04）

[2] “全固体熱トランジスタの制御幅3.5倍…北⼤、廃熱の高⾼度利用⽤提案”, ニュースイッチ by 日刊工業新聞 https://newswitch.jp/p/42142 (2024.07.04)

[3] “全固体熱トランジスタの制御幅3.5倍…北⼤、廃熱の高⾼度利用⽤提案”, 日刊工業新聞電子版 https://www.nikkan.co.jp/articles/view/717092 (2024.07.04)

[4] “全固体熱トランジスタの制御幅3.5倍…北大、廃熱の高度利用提案”, Yahooニュース https://news.yahoo.co.jp/articles/7cca9a40a9fc20f496300c2eff89edabc460dd11 (2024.07.05)

[5] “北海道大学ら、熱トランジスタの高性能化に成功”, EE Times Japan https://eetimes.itmedia.co.jp/ee/articles/2407/05/news074.html (2024.07.05)

[6] “北大など、熱伝導率制御幅を従来比1.5倍にした「熱トランジスタ」を開発”, マイナビニュース https://news.mynavi.jp/techplus/article/20240703-2978616/ (2024.07.03)

[7] “全固体熱トランジスタの制御幅3.5倍…北大、廃熱の高度利用提案”, gooニュース https://news.goo.ne.jp/article/newswitch/business/newswitch-42142.html (2024.07.05)

[8] “北大など、熱伝導率制御幅を従来比1.5倍にした「熱トランジスタ」を開発”, BIGLOBEニュース https://news.biglobe.ne.jp/it/0703/mnn_240703_9276501371.html  (2024.07.03)

[9] “北大など、熱伝導率制御幅を従来比1.5倍にした「熱トランジスタ」を開発”, exciteニュース https://www.excite.co.jp/news/article/Cobs_2785030/image/1/ (2024.07.05)

[10] “北大など、熱伝導率制御幅を従来比1.5倍にした「熱トランジスタ」を開発”, マピオン https://www.mapion.co.jp/news/column/cobs2785030-1/(2024.07.03)

[11] “全固体熱トランジスタの制御幅3.5倍…北大、廃熱の高度利用提案”, dmenuニュースhttps://topics.smt.docomo.ne.jp/article/newswitch/business/newswitch-42142(2024.07.05)

[12] “北大など、熱伝導率制御幅を従来比1.5倍にした「熱トランジスタ」を開発”, Rakuten Infoseek News https://news.infoseek.co.jp/photo/mynavi_2785030/ (2024.07.05)

[13] “北大など、高性能な全固体熱トランジスタ　廃熱利用に”, NIKKEI Tech Foresight  https://www.nikkei.com/prime/tech-foresight/article/DGXZQOUC1219J0S4A710C2000000 (2024.07.17)

[14] “熱の伝わりやすさを制御”, 日本経済新聞 (2024.7.30)

[15] “熱の伝わりやすさを制御、廃熱利用目指す　北大など”, 日本経済新聞オンライン (2024.07.30)

[16]  “平和な用途に”, 日刊工業新聞 (2024.07.08)

[17] “8K有機EL TV画面を駆動可能 高電子移動度の酸化物TFT”, EE Times Japan (2024.08.09)

[18] “北大ら，安定性の高い酸化物薄膜トランジスタを実現”, オプトロニクスオンライン (2024.08.08)

[19] “実用レベルの酸化物薄膜トランジスタを発表――超大型8K有機ELテレビ開発を後押し　北海道大学と高知工科大学”, Fabcross for エンジニア (2024.08.08)

[20] “性能が従来比10倍の酸化物薄膜トランジスタ～次世代の超大型有機ELテレビに～”, アドコム・メディア (2024.08.07)

[21] “北大、TFTの電子移動度を10倍に向上　8K有機ディスプレー向け”, 日刊工業新聞 電子版 (2024.08.14)

[22] “TFTの電子移動度10倍に　北大、8K有機ELディスプレー向け”, 日刊工業新聞 21面 (2024.08.14)

[23] “北大、従来⽐10倍の性能を⽰す酸化物薄膜トランジスタを実現”, 半導体Times (2024.08.07)

[24] “「薄膜トランジスタ」電子移動度10倍に、北大などが成功した意義”, Yahoo!ニュース (2024.08.18)

[25] “「薄膜トランジスタ」電子移動度10倍に、北大などが成功した意義”, 日刊工業新聞 ニュースイッチ (2024.08.18)

[26] “8K有機EL TV画面を駆動可能　高電子移動度の酸化物TFT”, EE Times Japan (2024.08.09)

[27] “「薄膜トランジスタ」電子移動度10倍に、北大などが成功した意義”, Gooニュース (2024.08.18)

[28] “北大と高知工科大が従来比10倍の性能の実用レベルのTFT　次世代超大型8K有機ELテレビ開発を加速”, 電波新聞 (2024.08.23)

[29] ”北大など、電子移動度が10倍の酸化物TFT　大型OLEDに”, NIKKEI Tech Foresight (2024.08.28)

[30] “Development of oxide thin-film transistors (TFTs) with ten times higher performance than current TFTs — Stability improvement while maintaining high electron mobility”, Science Japan (JST) (2024.10.29)

[31] “北海道大学和高知工科大学开发出性能比以往高10倍的氧化物薄膜晶体管，为新一代超大型有机EL电视开辟道路”, 客観日本 (2024.10.03)

[3] Hikaru Sadahira, Poster Award, “Development of Indium Hydroxide Ceramic Target for High-Mobility Oxide Semiconductor Thin-Film Transistors – Stepped Closer to Practical Application for Next Generation Displays -“, The 25th RIES-HOKUDAI International Symposium, Hokkaido University, December 10th, 2024. [Certificate]

[2] ジョン アロン, 優秀ポスター賞, “酸化セリウム薄膜の電気化学酸化還元を利用した高性能熱トランジスタの開発”, 第18回固体イオニクスセミナー, 日本固体イオニクス学会, つくば, 2024.09.04 賞状

[1] 吉村充生, 第27回応用物理学会北海道支部 発表奨励賞, LaNiO₃薄膜を活性層とする全固体熱トランジスタの作製（共著者：李　好博, 卞 志平, ジョンアロン, 曲 勇作, 田中秀和, 太田裕道）(2024.1.19) 賞状

[1] 太田裕道, 曲 勇作, ジョンアロン, 卞 志平, 吉村充生, “熱トランジスタ”, 特願2024-018066, 2024年2月8日出願

[2] 太田裕道, 曲 勇作, ゲディア プラシャント ラマニクラル, 定平 光, コン ヒョンジュン, “水素化酸化インジウム膜形成用のセラミックターゲットとその製造方法、およびセラミックターゲットを用いた薄膜トランジスタの製造方法”, 特願2024-150613, 2024年9月2日出願

[1] Yuzhang Wu, Yusaku Magari, Prashant Ghediya, and Hiromichi Ohta, “Modulation of Electron Transport Properties of Amorphous In−Zn−O Films with Varied Zn Concentrations”, HU-PNU Mini Symposium on Functional Materials Science, Hokkaido University, Sapporo, January 10-13, 2024 (Oral).

[2] Zhiping Bian, Mitsuki Yoshimura, Ahrong Jeong, Hiromichi Ohta, “Absence of High On-to-Off Thermal Conductivity Ratio in the La_xSr_1−xCoO_y-based Thermal Transistors”, HU-PNU Mini Symposium on Functional Materials Science, Hokkaido University, Sapporo, January 10-13, 2024 (Oral).

[3] Kungwan Kang, Fumiaki Kato, Akitoshi Nakano, Ichiro Terasaki, Takashi Endo, Yasutaka Matsuo, Hyoungjeen Jeen, and Hiromichi Ohta, “Preparation and Thermoelectric Properties of Freestanding Ba_1/3CoO₂ Single Crystalline Films”, HU-PNU Mini Symposium on Functional Materials Science, Hokkaido University, Sapporo, January 10-13, 2024 (Oral).

[4] Mitsuki Yoshimura, Haobo Li, Zhiping Bian, Ahrong Jeong, Yusaku Magari, Hidekazu Tanaka, and Hiromichi Ohta, “Fabrication of Solid-State Electrochemical Thermal Transistors based on LaNiO₃ Films as Active Layers”, HU-PNU Mini Symposium on Functional Materials Science, Hokkaido University, Sapporo, January 10-13, 2024 (Oral).

[5] Hikaru Sadahira, Yusaku Magari, Prashant Ghediya, and Hiromichi Ohta, “Lateral grain size control of polycrystalline In₂O₃ thin films”, HU-PNU Mini Symposium on Functional Materials Science, Hokkaido University, Sapporo, January 10-13, 2024 (Poster).

[6] Diwen Chen, Kungwan Kang, and Hiromichi Ohta, “Exploring the Thermal Stability and Phase Transition of Ba_1/3CoO₂: Implications for Oxide Thermoelectric Materials at Elevated Temperatures”, HU-PNU Mini Symposium on Functional Materials Science, Hokkaido University, Sapporo, January 10-13, 2024 (Poster).

[7] ジョンアロン, “「海外で研究者になりたい夢」に向けて”, 日本熱電学会誌, 21[1], 7-9 (2024).

[8] 楊倩, 太田裕道, “全固体電気化学熱トランジスタの高性能化”, 第12回 物質・デバイス領域共同研究拠点活動報告会, 東京工業大学大岡山キャンパス, 2024.5.22（招待ポスターセッション）

[9] 寺崎一郎, 太田裕道, “新奇層状熱電材料の熱伝導における元素置換効果”, 第12回 物質・デバイス領域共同研究拠点活動報告会, 東京工業大学大岡山キャンパス, 2024.5.22（招待ポスターセッション）

[10] Hikaru Sadahira, Prashant Ghediya, Hyeonjun Kong, Akira Miura, Hiromichi Ohta, Yusaku Magari, “Development of indium hydroxide target toward high-mobility oxide thin film transistors”, The 27th Hokkaido University – Seoul National University Joint Symposium, 2024 International Workshop on the New Frontiers in Convergence Science and Technology, Seoul National University, November 28, 2024.

[11] Mitsuki Yoshimura, Ahrong Jeong, Hyeonjun Kong, Zhiping Bian, Jason Tam, Bin Feng, Yuichi Ikuhara, Kwanhong Park, Jaekwang Lee, and Hiromichi Ohta, “Development of solid-state electrochemical thermal transistors using an earth abundant oxide”, The 27th Hokkaido University – Seoul National University Joint Symposium, 2024 International Workshop on the New Frontiers in Convergence Science and Technology, Seoul National University, November 28, 2024.

[11] Kungwan Kang, Fumiaki Kato, Akitoshi Nakano, Ichiro Terasaki*, Takashi Endo, Yasutaka Matsuo, Hyoungjeen Jeen*, and Hiromichi Ohta*, “Fabrication and Thermoelectric Properties of Freestanding Ba_1/3CoO₂ Single Crystalline Films”, ACS Appl. Electron. Mater. 5, 5749-5754 (2023). (October 16, 2023) (DOI: 10.1021/acsaelm.3c01129) International collaboration, Network Joint Research Center for Materials and Devices, Intra-institute collaboration, Hokkaido University (in Japanese), Nagoya University (in Japanese), RIES, Hokkaido University, 日本の研究.com, X (Twitter) Reference movie: Peeling off of Na_0.75CoO₂ single crystalline film, Reference:Adv. Mater. 18, 1649–1652 (2006).

[10] Rui Yu, Lizhikun Gong, Hiromichi Ohta, Tsukasa Katayama*, “Ferroelectricity, high permittivity, and tunability in millimeter-size crack-free Ba_1–xSr_xTiO₃ flexible epitaxial sheets”, ACS Appl. Electron. Mater. 5, 5234–5239 (2023). (September 14, 2023) (DOI: 10.1021/acsaelm.3c00963)

[9] Mitsuki Yoshimura, Qian Yang, Zhiping Bian, and Hiromichi Ohta*, “Significant Reduction in the Switching Time of Solid-State Electrochemical Thermal Transistors”, ACS Appl. Electron. Mater. 5, 4233 (2023). (July 24, 2023) (DOI: 10.1021/acsaelm.3c00512)  International collaboration, Network Joint Research Center for Materials and Devices

[8] Zhiping Bian*, Qian Yang, Mitsuki Yoshimura, Hai Jun Cho, Joonhyuk Lee, Hyoungjeen Jeen, Takashi Endo, Yasutaka Matsuo, and Hiromichi Ohta*, “Solid-State Electrochemical Thermal Transistors with Strontium Cobaltite – Strontium Ferrite Solid Solutions as the Active Layers”, ACS Appl. Mater. Interfaces 15, 23512-23517 (2023). (May 3, 2023) (DOI:10.1021/acsami.3c03660) International collaboration, Network Joint Research Center for Materials and Devices, Intra-institute collaboration

[7] Lizhikun Gong, Rui Yu, Hiromichi Ohta, and Tsukasa Katayama*, “Synthesis and transparent conductivity of crack-free La:BaSnO₃ epitaxial flexible sheet”, Dalton Trans 52, 6317 (2023) (April 17, 2023) (DOI: 10.1039/d3dt01097j)

[6] Binjie Chen, Jinghuang Lin, Bin Feng, Yuichi Ikuhara, and Hiromichi Ohta, “High-Mobility Rutile SnO₂ Epitaxial Films Grown on (1-100) α-Al₂O₃”, J. Ceram. Soc. Jpn. 131, 640 (2023). (October 1, 2023) (DOI: 10.2109/jcersj2.23035) JSPS Core project, Network Joint Research Center for Materials and Devices

[5] Binjie Chen*, Chuchu Yang, Bin Feng, Yuichi Ikuhara, and Hiromichi Ohta*, “Suppression of Strain Relaxation in VO₂/TiO₂ Multilayered Films”, ACS Appl. Electron. Mater. 5, 2433-2438 (2023). (April 5, 2023) (DOI: 10.1021/acsaelm.3c00246) JSPS Core project, Network Joint Research Center for Materials and Devices

[4] Atsushi Tsurumaki-Fukuchi*, Takayoshi Katase, Hiromichi Ohta, Masashi Arita, and Yasuo Takahashi, “Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics”, ACS Appl. Mater. Interfaces 15, 16842-16852 (2023). (March 23, 2023) (DOI: 10.1021/acsami.2c21568) Open Access, Intra-university collaboration

[3] Qian Yang, Hai Jun Cho, Zhiping Bian, Mitsuki Yoshimura, Joonhyuk Lee, Hyoungjeen Jeen, Jinghuang Lin, Jiake Wei, Bin Feng, Yuichi Ikuhara, and Hiromichi Ohta*, “Solid-State Electrochemical Thermal Transistors”, Adv. Funct. Mater. 33, 2214939 (2023). (February 21, 2023) (DOI: 10.1002/adfm.202214939) Open Access, Frontispiece, Altmetric, International collaboration, Network Joint Research Center for Materials and Devices, JSPS-CORE Project, Hokkaido University (in Japanese), Hokkaido University (in English), Research Institute for Electronic Science-Hokkaido University, 日本の研究.com, ERESTAGE LAB’s YouTube movie

[2] Prashant Ghediya*, Hui Yang, Takashi Fujimoto, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, and Hiromichi Ohta*, “Improved Electron Transport Properties of Zn-rich In-Ga-Zn-O Thin Film Transistors”, J. Phys. Chem. C 127, 2622-2627 (2023). (January 25, 2023) (DOI: 10.1021/acs.jpcc.2c07442) International collaboration, Intrainstitute collaboration

[1] Sheng-Ying Chou, Hiroshi Masai*, Masaya Otani, Hiromichi V. Miyagishi, Gentaro Sakamoto, Yusuke Yamada, Yusuke Kinoshita*, Hitoshi Tamiaki, Takayoshi Katase, Hiromichi Ohta, Tomoki Kondo, Akinobu Nakada, Ryu Abe, Takahisa Tanaka, Ken Uchida, and Jun Terao*, “Efficient electrocatalytic H₂O₂ evolution utilizing electron-conducting molecular wires spatially separated by rotaxane encapsulation”, Appl. Catal. B: Environmental (2023). (January 9, 2023) (DOI: 10.1016/j.apcatb.2023.122373) Network Joint Research Center for Materials and Devices

[3] Yuqiao Zhang* & Hiromichi Ohta*, “Recent progress in thermoelectric layered cobalt oxide thin films”, NPG Asia Mater. 15, 67 (2023). (December 29, 2023) (DOI: 10.1038/s41427-023-00520-w) Open Access, International collaboration

[2] 太田裕道, “Ba_1/3CoO₂：空気中・600℃で性能指数ZT = 0.55を示す酸化物熱電材料”, 日本結晶成長学会誌 50 (3), ID: 50-3-01 (2023).

[1] 太田裕道, “Ba_1/3CoO₂－高温・空気中で安定した性能を示す実用的な熱電変換材料－”, 機能材料 43 (4), 3-9 (2023).

[1] Hiromichi Ohta, “Film Growth of Functional Oxide Thin Films and Their Applications towards Optoelectronics and Thermoelectrics”, Lecture at Jiangsu University, School of Chemistry and Chemical Engineering, Jiangsu University, China, May 29-31, 2023 (Invited).

[2] Yusaku Magari, Prashant Ghediya, and Hiromichi Ohta, “High-mobility polycrystalline In₂O₃:H thin-film transistors fabricated through low-temperature solid-phase crystallization”, The 30th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD23), Kyoto, Japan, July 4-7, 2023.

[3] Yusaku Magari and Hiromichi Ohta, “High-mobility thin-film transistors with polycrystalline In₂O₃ channel deposited by pulsed laser deposition under high-base pressure”, The 23rd International Meeting on Information Display (iMiD 2023), Busan, Korea, August 22-25, 2023.

[4] 太田裕道, “全固体電気化学熱トランジスタ：遷移金属酸化物の熱伝導率を電気的に切替える固体スイッチ”, 第84回 応用物理学会秋季学術講演会「イオントロニクスにおける酸化物・カルコゲナイトの新機能」, 熊本城ホールほか3会場, 2023年9月19日-23日 (Invited).

[5] Lizhikun Gong, Binjie Chen, Rui Yu, Hiromichi Ohta, Katayama Tsukasa, “[Young Scientist Presentation Award Speech] Flexible BaTiO₃ Epitaxial Films with Bulk-like Ferroelectricity and Piezoelectricity”, 第84回 応用物理学会秋季学術講演会「イオントロニクスにおける酸化物・カルコゲナイトの新機能」, 熊本城ホールほか3会場, 2023年9月19日-23日 (Invited).

[6] Hiromichi Ohta, “SrCoO_x-based solid-state electrochemical thermal transistors”, International Conference on Condensed Matter and Device Physics (ICCMDP-2023), Gandhinagar, September 27-29, 2023.

[7] Hiromichi Ohta, “Functional oxide thin film growth and application – An introduction –”, Global Scholar Seminar for Emerging Semiconductor, Emerging Display, Automobile, and Energy, Hanyang University, Korea, October 19, 2023 (Invited).

[8] Hiromichi Ohta, “A thermoelectric oxide, Ba_1/3CoO₂“, 14th ISAJ Annual Symposium (Integrated Science for a Sustainable Society), Hokkaido University, Sapporo, November 14, 2023 (Plenary). (Photo)

[9] Tsukasa Katayama, “Development of synthesis method for single-crystal oxide flexible sheets”, MRM2023/IUMRS-ICA2023 (Symposium D-1), Kyoto, December 11-16, 2023. (Invited)

[10] Hiromichi Ohta, “Solid-State Electrochemical Thermal Transistors”, MRM2023/IUMRS-ICA2023 (Symposium A-4), Kyoto, December 11-16, 2023. (Invited)

[1] Lizhikun Gong, Mian Wei, Rui Yu, Hiromichi Ohta, Tsukasa Katayama, “Deep-UV transparent conducting SrSnO₃ freestanding sheet using Al₂O₃ protection layer”, 第58回応用物理学会北海道支部/第19回日本光学会北海道支部合同学術講演会, 室蘭工業大学（北海道札幌市）, 2023.1.7-8.

[2] 于睿，龔李治坤, 太田裕道，片山司, “PET基板に転写したBa_xSr_1-xTiO₃シートの誘電特性”, 第58回応用物理学会北海道支部/第19回日本光学会北海道支部合同学術講演会, 室蘭工業大学（北海道札幌市）, 2023.1.7-8.

[3] Y. Liu, B. Chen, H. Ohta, T. Katayama, “Antiferroic-to-ferroic phase transitions in spin and charge of hexagonal TbFeO₃ film”, 第58回応用物理学会北海道支部/第19回日本光学会北海道支部合同学術講演会, 室蘭工業大学（北海道札幌市）, 2023.1.7-8. 発表奨励賞 受賞

[4] 丸野内洸, 龔李治坤, 太田裕道, 片山司, “BaTiO₃薄膜の強誘電特性へのGa及びAl置換効果”, 第58回応用物理学会北海道支部/第19回日本光学会北海道支部合同学術講演会, 室蘭工業大学（北海道札幌市）, 2023.1.7-8.

[5] Binjie Chen, Gowoon Kim, Hai Jun Cho, and Hiromichi Ohta, “Orthorhombic Distortion Induced Insulator-to-Metal Transition Behavior of VO₂/TiO₂ Bilayer Films on (1-100) α-Al₂O₃“, 7th International Conference on Advances in Functional Materials (AFM 2023), Fukuoka, Japan, January 9-12, 2023 (Oral)

[6] Xi Zhang, Yuqiao Zhang, Liao Wu, Akihiro Tsuruta, Masashi Mikami, Hai Jun Cho, Hiromichi Ohta, “Ba_1/3CoO₂: A Thermoelectric Oxide Showing a Reliable ZT of ∼0.55 at 600 °C in Air”, 7th International Conference on Advances in Functional Materials (AFM 2023), Fukuoka, Japan, January 9-12, 2023 (Oral)

[7] Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta, “Electric Field Thermopower Modulation Analyses of High Mobility In-Sn-Zn-O Thin Film Transistors”, 7th International Conference on Advances in Functional Materials (AFM 2023), Fukuoka, Japan, January 9-12, 2023 (Oral)

[8] Mitsuki Yoshimura, Qian Yang, Zhiping Bian, Hai Jun Cho, Hiromichi Ohta, “Faster Operation of SrCoO_x-based Solid-State Electrochemical Thermal Transistors”, 7th International Conference on Advances in Functional Materials (AFM 2023), Fukuoka, Japan, January 9-12, 2023 (Poster)

[9] Prashant R. Ghediya, Hui Yang, Takashi Fujimoto, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta, “Electric Field Thermopower Modulation Analyses of the Operation Mechanism of Amorphous InGaO₃(ZnO)_m Thin Film Transistors”, 7th International Conference on Advances in Functional Materials (AFM 2023), Fukuoka, Japan, January 9-12, 2023 (Oral)

[10] Zhiping Bian, Qian Yang, Mitsuki Yoshimura, Hai Jun Cho, Hiromichi Ohta, “Solid-state Electrochemical Thermal Transistors using SrCoO_y−SrFeO_y Solid Solutions”, 7th International Conference on Advances in Functional Materials (AFM 2023), Fukuoka, Japan, January 9-12, 2023 (Oral)

[11] 楊 倩，ジョヘジュン，卞 志平, 吉村充生, イジュンヤク，ジンヒョンジン, 林 景煌, 魏 家科, 馮 斌, 幾原雄一, 太田裕道, “全固体電気化学熱トランジスタ”, 第70回 応用物理学会 春季学術講演会, 上智大学 四谷キャンパス＋オンライン, 2023年3月17日

[12] 吉村充生，楊 倩, 卞 志平, ジョへジュン, 太田裕道, “全固体熱トランジスタ特性に及ぼす固体電解質厚さの影響”, 上智大学 四谷キャンパス＋オンライン, 2023年3月17日

[13] 卞 志平，楊 倩，吉村充生，イジュンヤク，ジンヒョンジン, 林 景煌, 馮 斌, 幾原雄一, ジョヘジュン, 太田裕道, “全固体電気化学熱トランジスタの活性層Ⅰ: SrCoO_x−SrFeO_x固溶体”, 第70回 応用物理学会 春季学術講演会, 上智大学 四谷キャンパス＋オンライン, 2023年3月17日

[14] 卞 志平，太田裕道, “全固体電気化学熱トランジスタの活性層Ⅱ: SrCoO_x−SrRuO_x固溶体”, 第70回 応用物理学会 春季学術講演会, 上智大学 四谷キャンパス＋オンライン, 2023年3月17日

[15] 曲 勇作，ゲディアプラシャント, 楊 卉, 張 雨橋, 松尾保孝, 太田裕道, “高背圧下でのPLDによる高移動度In₂O₃薄膜作製”, 第70回 応用物理学会 春季学術講演会, 上智大学 四谷キャンパス＋オンライン, 2023年3月15日

[16] ゲディアプラシャント, 曲 勇作, 楊 卉, 張 雨橋, 松尾保孝, 太田裕道, “高背圧下PLDにより作製した高移動度In₂O₃薄膜を活性層とするTFT”, 第70回 応用物理学会 春季学術講演会, 上智大学 四谷キャンパス＋オンライン, 2023年3月15日

[17] 楊 卉，Prashant Ghediya，張 雨橋，松尾保孝，曲 勇作，太田裕道, “強誘電体HfO₂-ZrO₂ゲート透明InSnZnO_x薄膜メモリー”, 第70回 応用物理学会 春季学術講演会, 上智大学 四谷キャンパス＋オンライン, 2023年3月15日

[18] 丸野内洸，龔 李治坤，太田裕道，片山 司, “BaTiO₃薄膜の強誘電特性へのGa及びAl置換効果”, 第70回 応用物理学会 春季学術講演会, 上智大学 四谷キャンパス＋オンライン, 2023年3月15日-18日

[19] Liu Yaoming，Chen Binjie，太田裕道，片山 司, “六方晶TbFeO₃薄膜のスピン・電荷における反フェロ－フェロ相転移”, 第70回 応用物理学会 春季学術講演会, 上智大学 四谷キャンパス＋オンライン, 2023年3月15日-18日

[20] Lizhikun Gong, Bingjie Chen, Rui Yu, Hiromichi Ohta, Tsukasa Katayama, “Flexible BaTiO₃ Epitaxial Films with Bulk-like Ferroelectricity and Piezoelectricity”, 第70回 応用物理学会 春季学術講演会, 上智大学 四谷キャンパス＋オンライン, 2023年3月15日-18日

[21] 伊藤駿一郎, 金橋魁利, 田中久暁, 陳 斌杰, 太田裕道, 竹延大志, “導電性高分子PBTTTへの電気化学ドーピング：熱電特性”, 第70回 応用物理学会 春季学術講演会, 上智大学 四谷キャンパス＋オンライン, 2023年3月15日-18日

[22] Hao-Bo Li, Shunsuke Kobayashi, Binjie Chen, Hiroshi Takatsu, Azusa N. Hattori, Wei-Hua Wang, Hiromichi Ohta, Hidekazu Tanaka, and Hiroshi Kageyama, “Epitaxial growth of layered-brownmillerite Sr₄Co₃O₉“, 第70回 応用物理学会 春季学術講演会, 上智大学 四谷キャンパス＋オンライン, 2023年3月15日-18日

[23] Yusaku Magari, Prashant Ghediya, Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta, “Base Pressure Controlled Fabrication of High-Mobility In₂O₃ Thin Film Transistors”, 2023 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8), Otaru, Japan, May 15-18, 2023

[24] Katelyn A. Kirchner, Melbert Jeem, Sohei Ogasawara, Hiromichi Ohta, Shinji Kohara, Tomoyuki Koganezawa, Rosantha Kumara, Masaya Fujioka, Junji Nishi, Yasutaka Matsuo, John C. Mauro, Madoka Ono, “Controlling the atomic structure of thin film SiO using crystal surfaces”, 2023 Glass & Optical Materials Division Annual Meeting (GOMD 2023), New Orleans, USA, June 4-8, 2023

[25] Yusaku Magari, Prashant Ghediya, Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, and Hiromichi Ohta, “High-mobility In₂O₃:H thin-film transistors by pulsed laser deposition under high-base pressure”, The 4th Workshop on Functional Materials Science (FMS2023), Busan, South Korea, June 18-21, 2023. (oral)

[26] Zhiping Bian, Qian Yang, Mitsuki Yoshimura, Hai Jun Cho, Joonhyuk Lee, Hyoungjeen Jeen, Takashi Endo, Yasutaka Matsuo, and Hiromichi Ohta, “Thermal Conductivity Modulation of SrCoO_y–SrFeO_y Solid Solution in Solid-State Electrochemical Thermal Transistors”, The 4th Workshop on Functional Materials Science (FMS2023), Busan, South Korea, June 18-21, 2023. (poster)

[27] Kungwan Kang, Fumiaki Kato, Ichiro Terasaki, Hyoungjeen Jeen, and Hiromichi Ohta, “Direct measurement of in-plane thermal conductivity for freestanding Ba_1/3CoO₂ films”, The 4th Workshop on Functional Materials Science (FMS2023), Busan, South Korea, June 18-21, 2023. (poster) Outstanding Presentation Award

[28] Mitsuki Yoshimura, Qian Yang, Zhiping Bian, Hai Jun Cho, and Hiromichi Ohta, “Reduction of the Electrical Resistance of Solid-State Electrochemical Thermal Transistors”, The 4th Workshop on Functional Materials Science (FMS2023), Busan, South Korea, June 18-21, 2023. (poster)

[29] 佐々野駿, 石川亮, 太田裕道, 柴田直哉, 幾原雄一, “(Li_3xLa_2/3-x)TiO₃対称傾角粒界における原子・電子構造解析およびイオン伝導測定”, 日本顕微鏡学会 第79回学術講演会, くにびきメッセ（島根県松江市) 2023年6月26日-28日

[30] 馮斌, 中出博暁, 栃木栄太, 太田裕道, 柴田直哉, 幾原雄一, “TEMその場観察を用いたジルコニアセラミックス強靭化機構の解明”, 日本顕微鏡学会 第79回学術講演会, くにびきメッセ（島根県松江市) 2023年6月26日-28日

[31] Shun Sasano, Ryo Ishikawa, Hiromichi Ohta, Naoya Shibata, and Yuichi Ikuhara, “Atomistic Origin of Grain Boundary Resistivity in Li_3xLa_2/3-x)TiO₃“, International workshop on Advances and In-situ Microscopies of Functional Nanomaterials and Devices (IAMNano 2023), Matsue, Shimane, Japan, June 28-July 1, 2023

[32] Yusaku Magari, Prashant Ghediya, Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, and Hiromichi Ohta, “High-mobility In₂O₃ thin films and thin-film transistors deposited under varied base pressure by pulsed laser deposition”, 2023 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD2023), Tokyo Institute of Technology, Yokohama, Japan, July 10-11, 2023.

[33] Yaoming Liu, Binjie Chen, Yosuke Hamasaki, Hiromichi Ohta, Tsukasa Katayama, “Magnetic phase transition induced modulation of ferroelectric properties in hexagonal RFeO₃ (R = Tb, Ho) system”, 第84回 応用物理学会秋季学術講演会「イオントロニクスにおける酸化物・カルコゲナイトの新機能」, 熊本城ホールほか3会場, 2023年9月19日-23日

[34] 曲 勇作, ゲディアプラシャント, 張 雨橋, 松尾保孝, 古田 守, 太田裕道, “多結晶In₂O₃:H薄膜トランジスタ特性の固相結晶化雰囲気依存性”, 第84回 応用物理学会秋季学術講演会「イオントロニクスにおける酸化物・カルコゲナイトの新機能」, 熊本城ホールほか3会場, 2023年9月19日-23日

[35] Prashant Ghediya, Yusaku Magari, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta, “Negative Bias Stability Improvement of In₂O₃:H TFTs by Yttria Passivation”, 第84回 応用物理学会秋季学術講演会「イオントロニクスにおける酸化物・カルコゲナイトの新機能」, 熊本城ホールほか3会場, 2023年9月19日-23日

[36] Kungwan Kang, Fumiaki Kato, Akitoshi Nakano, Ichiro Terasaki, Hyoungjeen Jeen, Hiromichi Ohta, “Direct Measurement of In-Plane Thermal Conductivity for Freestanding Oxide Films”, 第84回 応用物理学会秋季学術講演会「イオントロニクスにおける酸化物・カルコゲナイトの新機能」, 熊本城ホールほか3会場, 2023年9月19日-23日(ポスター)

[37] Zhiping Bian, Mitsuki Yoshimura, Ahrong Jeong, Hiromichi Ohta, “Absence of High On-to-Off Thermal Conductivity Ratio in the La_xSr_1−xCoO_y-based Thermal Transistors”, 第84回 応用物理学会秋季学術講演会「イオントロニクスにおける酸化物・カルコゲナイトの新機能」, 熊本城ホールほか3会場, 2023年9月19日-23日

[38] Hiromichi Ohta, Qian Yang, Hai Jun Cho, Zhiping Bian, Mitsuki Yoshimura, Joonhyuk Lee, Hyoungjeen Jeen, Jinghuang Lin, Jiake Wei, Bin Feng, Yuichi Ikuhara, “SrCoO_x/YSZ-based Solid-State Electrochemical Thermal Transistors”, 29th International Workshop on Oxide Electronics (iWOE29), Busan, Korea, October 15-18, 2023.

[39] Zhiping Bian, Mitsuki Yoshimura, Qian Yang, Hai Jun Cho, Joonhyuk Lee, Hyoungjeen Jeen, Takashi Endo, Yasutaka Matsuo, and Hiromichi Ohta, “Solid-State Electrochemical Thermal Transistors with Perovskite Cobalt Oxide-based Solid Solutions as the Active Layers”, 29th International Workshop on Oxide Electronics (iWOE29), Busan, Korea, October 15-18, 2023. (Poster)

[40] Kungwan Kang, Fumiaki Kato, Akitoshi Nakano, Ichiro Terasaki, Hyoungjeen Jeen, and Hiromichi Ohta, “Direct Thermal Conductivity Measurement for Freestanding Ba_1/3CoO₂ and Sr_1/3CoO₂ Films in the In-plane direction”, 29th International Workshop on Oxide Electronics (iWOE29), Busan, Korea, October 15-18, 2023.  Best Presentation Award

[41] Ahrong Jeong, Zhiping Bian, Mitsuki Yoshimura, and Hiromichi Ohta, “Thermal Conductivity Modulation in Sr_1−xBa_xCoO_y Epitaxial Films”, 29th International Workshop on Oxide Electronics (iWOE29), Busan, Korea, October 15-18, 2023.

[42] Kungwan Kang, Fumiaki Kato, Akitoshi Nakano, Ichiro Terasaki, Takashi Endo, Yasutaka Matsuo, Hyoungjeen Jeen, and Hiromichi Ohta, “Fabrication and Thermoelectric Properties of Freestanding Ba_1/3CoO₂ Single Crystalline Films”, 14th ISAJ Annual Symposium (Integrated Science for a Sustainable Society), Hokkaido University, Sapporo, November 14, 2023

[43] 太田裕道, 楊 倩, Hai Jun Cho, Zhiping Bian, 吉村充生, Joonhyuk Lee, Hyoungjeen Jeen, Jinghuang Lin, Jiake Wei, Bin Feng, 幾原雄一, “全固体電気化学熱トランジスタの開発”, 第49回固体イオニクス討論会, 北海道大学フロンティア応用科学研究棟, 2023年11月15日

[44] Ahrong Jeong, Zhiping Bian, Mitsuki Yoshimura, and Hiromichi Ohta, “Solid-State Electrochemical Thermal Transistors with Alkaline Earth-ion substituted Strontium Cobaltite Films”, 第49回固体イオニクス討論会, 北海道大学フロンティア応用科学研究棟, 2023年11月15日

[45] 吉村充生, 卞志平, ジョンアロン, 太田裕道, “LnNiO₃（Ln = La, Pr, Nd, Sm）エピタキシャル薄膜の熱伝導率―全固体熱トランジスタの活性層探索―”, 第49回固体イオニクス討論会, 北海道大学フロンティア応用科学研究棟, 2023年11月15日

[46] Kungwan Kang, Fumiaki Kato, Akitoshi Nakano, Ichiro Terasaki, Takashi Endo, Yasutaka Matsuo, Hyoungjeen Jeen, and Hiromichi Ohta, “Fabrication and thermoelectric properties of freestanding Ba_1/3CoO₂ single crystalline films”, 第49回固体イオニクス討論会, 北海道大学フロンティア応用科学研究棟, 2023年11月15日

[47] Ahrong Jeong, Zhiping Bian, Mitsuki Yoshimura, and Hiromichi Ohta, “Alkaline earth-ion substituted strontium cobaltite films as solid-state electrochemical thermal transistors”, The Mini-Workshop on Functional Materials Science (Organizers’ meeting), Sapporo, Japan, December 1-2, 2023. (Poster)

[48] Ko Marunouchi, Lizhikun Gong, Hiromichi Ohta, and Tsukasa Katayama, “Al and Ga doping effects on ferroelectric and dielectric properties of BaTiO₃ epitaxial films”, The Mini-Workshop on Functional Materials Science (Organizers’ meeting), Sapporo, Japan, December 1-2, 2023. (Poster)

[49] Kungwan Kang, Fumiaki Kato, Akitoshi Nakano, Ichiro Terasaki, Takashi Endo, Yasutaka Matsuo, Hyougjeen Jeen, and Hiromichi Ohta, “Preparation and thermoelectric properties of freestanding Ba_1/3CoO₂ single crystalline films”, The Mini-Workshop on Functional Materials Science (Organizers’ meeting), Sapporo, Japan, December 1-2, 2023. (Poster)

[50] Lithikun Gong, Hiromichi Ohta, and Tsukasa Katayama, “Flexible epitaxial BaTiO₃ films with bulk-like ferroelectricity and piezoelectricity”, The Mini-Workshop on Functional Materials Science (Organizers’ meeting), Sapporo, Japan, December 1-2, 2023. (Poster)

[51] Prashant Ghediya, Yusaku Magari, Yuqiao Zhang, Yasutaka Matsuo, and Hiromichi Ohta, “Stability improvement of high-mobility In₂O₃:H TFTs by yttria passivation”, The Mini-Workshop on Functional Materials Science (Organizers’ meeting), Sapporo, Japan, December 1-2, 2023. (Poster)

[52] Mitsuki Yoshimura, Haobo Li, Zhiping Bian, Ahrong Jeong, Yusaku Magari, Hidekazu Tanaka, and Hiromichi Ohta, “Thermal conductivity of LnNiO₃ (Ln = La, Pr, Nd, and Sm) epitaxial films”, The Mini-Workshop on Functional Materials Science (Organizers’ meeting), Sapporo, Japan, December 1-2, 2023. (Poster)

[53] Yuzhang Wu, Yusaku Magari, Prashant Ghediya, and Hiromichi Ohta, “Modulation of electron transport properties of amorphous In−Zn−O films with varied Zn concentrations”, The Mini-Workshop on Functional Materials Science (Organizers’ meeting), Sapporo, Japan, December 1-2, 2023. (Poster)

[54] Zhiping Bian, Mitsuki Yoshimura, Qian Yang, Hai Jun Cho, Joonhyuk Lee, Hyoungjeen Jeen, Takashi Endo, Yasutaka Matsuo, and Hiromichi Ohta, “Solid-state electrochemical thermal transistors with perovskite cobalt oxide-based solid solutions as the active layers”, The Mini-Workshop on Functional Materials Science (Organizers’ meeting), Sapporo, Japan, December 1-2, 2023. (Poster)

[55] Ahrong Jeong, Zhiping Bian, Mitsuki Yoshimura, and Hiromichi Ohta, “Alkaline Earth-ion Substituted Strontium Cobaltite Films as Solid-State Electrochemical Thermal Transistors”, The 24th RIES-HOKUDAI International Symposium 開 [kai], Hokkaido University, Sapporo, Japan, December 6-7, 2023.

[56] Yuzhang Wu, Yusaku Magari, Prashant Ghediya, and Hiromichi Ohta, “Modulation of Electron Transport Properties of Amorphous In−Zn−O Films with Varied Zn Concentrations”, The 24th RIES-HOKUDAI International Symposium 開 [kai], Hokkaido University, Sapporo, Japan, December 6-7, 2023.

[57] Zhiping Bian, Mitsuki Yoshimura, Qian Yang, Hai Jun Cho, Joonhyuk Lee, Hyoungjeen Jeen, Takashi Endo, Yasutaka Matsuo, and Hiromichi Ohta, “Solid-State Electrochemical Thermal Transistors with Perovskite Cobaltate-based Solid Solutions as the Active Layers”, The 24th RIES-HOKUDAI International Symposium 開 [kai], Hokkaido University, Sapporo, Japan, December 6-7, 2023.

[58] Kungwan Kang, Fumiaki Kato, Akitoshi Nakano, Ichiro Terasaki, Takashi Endo, Yasutaka Matsuo, Hyoungjeen Jeen, and Hiromichi Ohta, “Preparation and Thermoelectric Properties of Freestanding Ba_1/3CoO₂ Single Crystalline Films”, The 24th RIES-HOKUDAI International Symposium 開 [kai], Hokkaido University, Sapporo, Japan, December 6-7, 2023.

[59] Mitsuki Yoshimura, Haobo Li, Zhiping Bian, Ahrong Jeong, Yusaku Magari, Hidekazu Tanaka, and Hiromichi Ohta, “Thermal Conductivity of LnNiO₃ (Ln = La, Pr, Nd, and Sm) Epitaxial Films – Towards High Performance Solid-State Electrochemical Thermal Transistors –”, The 24th RIES-HOKUDAI International Symposium 開 [kai], Hokkaido University, Sapporo, Japan, December 6-7, 2023.

[60] Lizhikun Gong, Atsushi Taguchi, Hiromichi Ohta, Tsukasa Katayama, “Flexible BaTiO₃ Epitaxial Films with Bulk-like Ferroelectricity and Piezoelectricity”, The 2023 RIES-CEFMS (Research Institute for Electronic Science – Center for Emergent Functional Matter Science) Joint International Symposium, Rusutsu Resort Hotel and Convention Center, Japan, December 7-8, 2023. (Poster)

[61] Zhiping Bian, Mitsuki Yoshimura, Qian Yang, Hai Jun Cho, Joonhyuk Lee, Hyoungjeen Jeen, Takashi Endo, Yasutaka Matsuo, Hiromichi Ohta, “Solid-State Electrochemical Thermal Transistors with Perovskite Cobalt Oxide-based Solid Solutions as the Active Layers”, The 2023 RIES-CEFMS (Research Institute for Electronic Science – Center for Emergent Functional Matter Science) Joint International Symposium, Rusutsu Resort Hotel and Convention Center, Japan, December 7-8, 2023. (Poster)

[62] Kungwan Kang, Fumiaki Kato, Akitoshi Nakano, Ichiro Terasaki, Takashi Endo, Yasutaka Matsuo, Hyoungjeen Jeen, Hiromichi Ohta, “Fabrication and Thermoelectric Properties of Freestanding Ba_1/3CoO₂ Single Crystalline Films”, The 2023 RIES-CEFMS (Research Institute for Electronic Science – Center for Emergent Functional Matter Science) Joint International Symposium, Rusutsu Resort Hotel and Convention Center, Japan, December 7-8, 2023. (Poster)

[63] Y. Liu, B. Chen, Y. Hamasaki, H. Ohta, T. Katayama, “Magnetic Phase Transition Induced Modulation of Ferroelectric Properties in Hexagonal RFeO₃ (R = Tb, Ho) System”, The 2023 RIES-CEFMS (Research Institute for Electronic Science – Center for Emergent Functional Matter Science) Joint International Symposium, Rusutsu Resort Hotel and Convention Center, Japan, December 7-8, 2023. (Poster)

[64] Mitsuki Yoshimura, Zhiping Bian, Ahrong Jeong, Hiromichi Ohta, “Thermal Conductivity of RNiO₃ (R = La, Nd, Pr, and Sm) Epitaxial Films”, The 2023 RIES-CEFMS (Research Institute for Electronic Science – Center for Emergent Functional Matter Science) Joint International Symposium, Rusutsu Resort Hotel and Convention Center, Japan, December 7-8, 2023. (Poster)

[65] Zhiping Bian, Mitsuki Yoshimura, Ahrong Jeong, Hiromichi Ohta, “[A4-O202-06] Absence of High On-to-Off Thermal Conductivity Ratio in the La_xSr_1−xCoO_y-based Thermal Transistors”, MRM2023, Kyoto, Japan, December 11-16, 2023. (oral)

[66] Hiromichi Ohta, Xi Zhang, Yuqiao Zhang, Liao Wu, Akihiro Tsuruta, Masashi Mikami, Hai Jun Cho, “[B1-O203-02] Ba_1/3CoO₂: A Promising Thermoelectric Oxide Showing a Reliable ZT of ∼0.55 at 600 °C in Air”, MRM2023, Kyoto, Japan, December 11-16, 2023. (oral)

[67] Kungwan Kang, Fumiaki Kato, Akitoshi Nakano, Ichiro Terasaki, Hyoungjeen Jeen, Hiromichi Ohta, “[B1-O301-01] Direct Measurement of In-Plane Thermal Conductivity for Freestanding Ba_1/3CoO₂ and Sr_1/3CoO₂ Films”, MRM2023, Kyoto, Japan, December 11-16, 2023. (oral)

[68] Ahrong Jeong, Zhiping Bian, Hiromichi Ohta, Byung-Koog Jang, “[B1-O301-05] Thermal Conductivity Suppression of Ga and In Co-Substituted Zinc Oxide Epitaxial Films”, MRM2023, Kyoto, Japan, December 11-16, 2023. (oral)

[69] Mitsuki Yoshimura, Qian Yang, Zhiping Bian, Hiromichi Ohta, “[D1-O301-02] Significant Reduction in the Switching Time of Solid-State Electrochemical Thermal Transistors”, MRM2023, Kyoto, Japan, December 11-16, 2023. (oral)

[70] Yusaku Magari, Prashant Ghediya, Yuqiao Zhang, Yasutaka Matsuo, Mamoru Furuta, Hiromichi Ohta, “[S2-O202-03] Strong Dependence of Solid-Phase Crystallization Atmosphere on the Performance of In₂O₃:H Thin Film Transistors”, MRM2023, Kyoto, Japan, December 11-16, 2023. (oral)

[71] Prashant Ghediya, Yusaku Magari, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta, “[S2-O202-04] Origin of the Instability of High-Mobility Polycrystalline In₂O₃:H-based Thin Film Transistors”, MRM2023, Kyoto, Japan, December 11-16, 2023. (oral)

[1]”北大，全固体電気化学熱トランジスタを開発”, Optronics Online, 2023.2.22

[2] “北大、熱伝導率を電気スイッチで切り替え　全固体熱トランジスタ開発”, 日刊工業新聞（電子版）, 2023.2.24

[3] “熱伝導率を制御する全固体電気化学熱トランジスタを作製　北海道大学”, fabcross for エンジニア, 2023.2.24

[4] “北大、実用化可能な全固体電気化学熱トランジスタの作製に成功”, マイナビニュース, 2023.2.24

[5] “北大、実用化可能な全固体電気化学熱トランジスタの作製に成功”, Mapionニュース, 2023.2.24

[6] “熱伝導率を電気スイッチで切り替え、北大が開発「全固体熱トランジスタ」がスゴい”, ニュースイッチ, 2023.2.27

[7] “熱伝導率を電気スイッチで切り替え、北大が開発「全固体熱トランジスタ」がスゴい”, Yahoo!ニュース, 2023.2.27

[8] “熱伝導率を電気スイッチで切り替え、北大が開発「全固体熱トランジスタ」がスゴい”, NEWSPICKS, 2023.2.27

[9] “熱伝導率を電気スイッチで切り替え、北大が開発「全固体熱トランジスタ」がスゴい”, gooニュース, 2023.2.27

[10] “熱伝導率を電気スイッチで切り替え、北大が開発「全固体熱トランジスタ」がスゴい”, dmenuニュース, 2023.2.27

[11] “Solid-state thermal transistor demonstrated”, Science Daily, 2023.2.22

[12] “Solid-state thermal transistor demonstrated”, Nano Werk, 2023.2.22

[13] “Solid-state thermal transistor demonstrated”, EurekAlert!, 2023.2.22

[14] “Solid-state thermal transistor demonstrated”, Bioengineer.org, 2023.2.22

[15] “Scientists develop solid-state electrochemical thermal transistor”, Technewsboy, 2023.2.22

[16] “Scientists Develop Solid-State Electrochemical Thermal Transistor”, NEWS AZI, 2023.2.22

[17] “Scientists develop solid-state electrochemical thermal transistor”, Today Headline, 2023.2.22

[18] “Solid-state thermal transistor demonstrated”, NewsBeezer, 2023.2.22

[19] “Solid-state thermal transistor demonstrated”, VERVE TIMES, 2023.2.22

[20] “Scientists make solid-state thermal transistor”, Compound Semiconductor Magazine, 2023.2.22

[21] “Solid-State Thermal Transistor: The Future of Thermal Management Technology”, AZO MATERIALS, 2023.2.22

[22] “Solid-State Thermal Transistor Demonstrated”, Lab Manager, 2023.2.22

[23] “Solid-State Thermal Transistor Demonstrated”, RealClear Science, 2023.2.22

[24] “Developed Solid State Electrochemical Thermal Transistor”, Optimum Physics, 2023.2.22

[25] “Solid-state thermal transistor demonstrated”, One Eye News, 2023.2.22

[26] “Solid-state thermal transistor demonstrated”, KNOWLEDIA, 2023.2.22

[27] “Solid-state thermal transistor demonstrated”, AlphaGalileo, 2023.2.24

[28] “Solid-State Electrochemical Thermal Transistor Without Using Liquid”, Semiconductor Engineering, 2023.2.24

[29] “Solid-state thermal transistor demonstrated”, Plato Data Intelligence, 2023.2.24

[30] “Scientists develop solid-state electrochemical thermal transistor”, NEWS BREAK, 2023.2.23

[31] “Scientists develop solid-state thermoelectric transistors”, News 7F, 2022.2.23

[32] “Hokkaido University: Solid-State Thermal Transistor Demonstrated”, Targeted News Service, 2023.2.23

[33] “Scientists develop solid-state electrochemical thermal transistor”, Newsbit, 2023.2.22

[34] “Solid-State Thermal Transistor Demonstrated”, Eurasia Review, 2023.2.22

[35] “Scientists develop solid-state electrochemical thermal transistor”, Tech Xplore, 2023.2.22

[36] “Solid-state thermal transistor demonstrated”, asiaresearchnews, 2023.2.21

[37] “Solid-state thermal transistor demonstrated”, Mirage News, 2023.2.21

[38] “Scientists develop solid-state electrochemical thermal transistor”, Techstreet Now, 2023.2.22

[39] “Tranzystor termiczny, jakiego jeszcze nie było. Wykorzystuje się go częściej, niż myślisz”, Chip.pl, 2023.2.22

[40] “Transistor thermique à semi-conducteurs démontré | Alerte Eurek !”, Posts US News, 2023.2.22

[41] “Criado primeiro transstor trmico de estado slido”, Vision Art News, 2023.2.28

[42] “浅析固态热晶体管开启热管理技术新时代”, 电子发烧友, 2023.2.25

[43] “展示了固态热晶体管”, 0XZX, 2023.2.22

[44] “首個固態電化學熱晶體管問世”, 科技日報 2023.2.22

[45] “経営ひと言／北海道大学・太田裕道教授「熱を曲げたい」”, 日刊工業新聞（オンライン）, 2023.3.1

[46] “北大、実用化可能な全固体電気化学熱トランジスタの作製に成功”, Rakuten Infoseek News, 2023.2.24

[47] “北海道大学などが全固体電気化学熱トランジスタ、熱伝導率を電気制御”, 日経クロステック, 2023.3.20

[48] “Solid-State Electrochemical Thermal Transistors – A New Transistor Class with Great Potential”, NETZSCH (blog), 2023.4.13

[49] “高性能熱電材料「Ba_1/3CoO₂」の単結晶化に成功――サファイア基板上から単結晶膜を剥離　北海道大学ら”, fabcrossエンジニア, 2023.10.24

[50] “熱電変換材料としての実用化に一歩　北大などの研究Gが実用的な発電材料の単結晶化に成功”, 文教速報デジタル版, 2023.10.25

[5] Kungwan Kang, Best Presentation Award, Kungwan Kang, Fumiaki Kato, Ichiro Terasaki, Hyoungjeen Jeen, and Hiromichi Ohta, “Direct Thermal Conductivity Measurement for Freestanding Ba_1/3CoO₂ and Sr_1/3CoO₂ Films in the In-plane direction”, 29th International Workshop on Oxide Electronics (iWOE29), Busan, Korea, October 15-18, 2023.

[4] Lizhikun Gong, 54th (2023, Spring) JSAP Young Scientist Presentation Award (The Japan Society of Applied Physics), “Flexible BaTiO₃ Epitaxial Films with Bulk-like Ferroelectricity and Piezoelectricity” (Lizhikun Gong, Binjie Chen, Rui Yu, Hiromichi Ohta, Katayama Tsukasa) (2023.09.19)

[3] Kungwan Kang, Outstanding Presentation Award, Kungwan Kang, Fumiaki Kato, Ichiro Terasaki, Hyoungjeen Jeen, and Hiromichi Ohta, “Direct measurement of in-plane thermal conductivity for freestanding Ba_1/3CoO₂ films”,  The 4th Workshop on Functional Materials Science (FMS2023), Busan, South Korea, June 18-21, 2023.

[2] YOSHIMURA MItsuki, Dean’s Award for Academic Achievement, from School of Engineering, Hokkaido University

[1] Yaoming Liu, 応用物理学会北海道支部学術講演会発表奨励賞, “Antiferroic-to-ferroic phase transitions in spin and charge of hexagonal TbFeO₃ film”, Yaoming Liu, Binjie Chen, Hiromichi Ohta, Tsukasa Katayama

[1] 太田裕道, 曲 勇作, ゲディア プラシャント ラマニクラル, “薄膜トランジスタ”, 特願2023-185660, 2023年10月30日

[1] 太田裕道, “高温・空気中で安定した性能を示す実用的な熱電変換材料を発見”, 日本熱電学会誌 19, 141 (2023).

[2] 曲　勇作, “酸化インジウム薄膜の異常粒成長と超高移動度薄膜トランジスタ”, 新学術「機能コア科学」2023若手の会・領域全体会議合同会議, 東京大学, 東京, 2023年7月31日-8月1日（ポスター）.

[3] Zhiping Bian, “Absence of High On-to-Off Thermal Conductivity Ratio in the La_xSr_1−xCoO_y-based Thermal Transistors”, 新学術「機能コア科学」2023若手の会・領域全体会議合同会議, 東京大学, 東京, 2023年7月31日-8月1日（ポスター）.

[4] Kungwan Kang, “Direct Measurement of In-Plane Thermal Conductivity for Freestanding Ba_1/3CoO₂ and Sr_1/3CoO₂ Films”, 新学術「機能コア科学」2023若手の会・領域全体会議合同会議, 東京大学, 東京, 2023年7月31日-8月1日（ポスター）.

[5] 吉村充生, “全固体電気化学熱トランジスタのオン/オフ切替えの高速化”, 新学術「機能コア科学」2023若手の会・領域全体会議合同会議, 東京大学, 東京, 2023年7月31日-8月1日（ポスター）.

[6] Hiromichi Ohta, “Functional oxide thin film growth and application − An introduction −”, Workshop at RIES-Hokkaido University, Hokkaido University, Sapporo, Japan, August 21, 2023.

[10] Jason Tam, Peter M. Brodersen, Hiromichi Ohta, and Uwe Erb, “Contamination of rare earth oxide surfaces stored in vacuum environment”, Colloids and Surfaces A: Physicochemical and Engineering Aspects 659, 130829 (2023) (DOI: 10.1016/j.colsurfa.2022.130829) International collaboration

[9] Lizhikun Gong, Mian Wei, Rui Yu, Hiromichi Ohta, and Tsukasa Katayama*, “Significant Suppression of Cracks in Freestanding Perovskite Oxide Flexible Sheets Using a Capping Oxide Layer”, ACS Nano 16, 21013 – 21019 (2022). (November 21, 2022) (DOI: 10.1021/acsnano.2c08649)

[8] Binjie Chen*, Kungwan Kang, Hyoungjeen Jeen, Yuqiao Zhang, Jinghuang Lin, Bin Feng, Yuichi Ikuhara, Sena Hoshino, Katsuyuki Matsunaga, and Hiromichi Ohta*, “Orthorhombic Distortion-induced Anatase-like Optoelectronic Properties of Rutile TiO₂“, J. Appl. Phys. 132, 185301 (2022). (November 8, 2022) (DOI: 10.1063/5.0119725) International collaboration, Network Joint Research Center for Materials and Devices, Functional CORE project

[7] Hui Yang*, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, and Hiromichi Ohta*, “Thermopower Modulation Analyses of High-mobility Transparent Amorphous Oxide Semiconductor Thin-Film Transistors”, ACS Appl. Electron. Mater. 4, 5081-5086 (2022). (September 29, 2022) (DOI: 10.1021/acsaelm.2c01210) Altmetric, International collaboration, Intrainstitute collaboration, Network Joint Research Center for Materials and Devices, Hokkaido University (Japanee), Hokkaido University (English), Research Institute for Electronic Science, Hokkaido University, Functional CORE project, 日本の研究.com

[6] Binjie Chen, Hiromichi Ohta, and Tsukasa Katayama*, “Ferroelectric and magnetic properties of hexagonal ErFeO₃ epitaxial films”, ACS Appl. Electron. Mater. 4, 4547–4552 (2022). (August 23, 2022) (DOI: 10.1021/acsaelm.2c00767)

[5] Xi Zhang^#, Yuqiao Zhang^#*, Liao Wu, Akihiro Tsuruta, Masashi Mikami, Hai Jun Cho, and Hiromichi Ohta*, “Ba_1/3CoO₂: A Thermoelectric Oxide Showing a Reliable ZT of ∼0.55 at 600 °C in Air”, ACS Appl. Mater. Interfaces 14, 33355–33360 (2022). (July 12, 2022)  (DOI: 10.1021/acsami.2c08555) OPEN ACCESS  Press release (Hokkaido U.), Press release (AIST), RIES-Hokkaido U., JSPS-CORE Project, 日本の研究.com, Facebook, Twitter (English), LinkedIn Altmetric

[4] Yuqiao Zhang*, Hai Jun Cho, Feng Jiang, Chengliang Xia, Yue Chen, Weishu Liu*, and Hiromichi Ohta*, “Modulation of Electrical and Thermal Transports through Lattice Distortion in BaTi_1–xNb_xO₃ Solid Solutions”, Nanotechnology  33, 405702 (2022). (13 July 2022) (DOI: 10.1088/1361-6528/ac78f3)  International Collaboration

[3] Michihiko Yamanouchi, Yasufumi Araki, Takaki Sakai, Tetsuya Uemura, Hiromichi Ohta, and Jun’ichi Ieda, “Observation of topological Hall torque exerted on a domain wall in the ferromagnetic oxide SrRuO₃“, Science Adv. 8, eabl6192 (2022). (15 April 2022) (DOI: 10.1126/sciadv.abl619)

[2] Binjie Chen, Tetsuya Hasegawa, Hiromichi Ohta, and Tsukasa Katayama, “Antiferroelectric-to-ferroelectric phase transition in hexagonal rare-earth iron oxides”, J. Mater. Chem. C 10, 5621-5626 (2022). (March 4th, 2022) (DOI: 10.1039/D1TC05944K)

[1] Youjung Kim, Seonghyeon Kim, Hyeongmin Cho, Young Mo Kim, Hiromichi Ohta, and Kookrin Char*, “Transport properties of LaInO₃/BaSnO₃ interface analyzed by Poisson-Schrödinger equation”, Phys. Rev. Applied 17, 014031 (2022). (January 25, 2022) (DOI: 10.1103/PhysRevApplied.17.014031) International Collaboration

[6]  太田裕道, “高温・空気中で安定した性能を示す実用的な熱電変換材料を発見”, クリーンエネルギー 31, No. 12, 41 (2022).

[5] 太田裕道, 寺崎一郎, 齊藤圭司, “機能コアを活用した新機能薄膜の創成”, まてりあ 第61巻 第10号, 661-665 (2022). 特集 結晶欠陥に形成される「機能コア」研究の最前線

[4] Gowoon Kim* and Hiromichi Ohta*, “1D Atomic Defect Tunnel Structure of Oxygen-Deficient Tungsten Oxide Epitaxial Films and Its Redox Device Applications”, , Phys. Status Solidi A 2200058 (2022). (August 23, 2022) (DOI: 10.1002/pssa.202200058)

[3] Katsuyuki Matsunaga, Masato Yoshiya, Naoya Shibata, Hiromichi Ohta, and Teruyasu Mizoguchi, “Ceramic Science of Crystal Defect Cores”, J. Ceram. Soc. Jpn. 130, 471-476 (2022). (July 9, 2022) (DOI: 10.2109/jcersj2.22080) Free access

[2] Hiromichi Ohta*, “Thin Film Growth and Thermoelectric Properties of Electron Conducting Oxides”, J. Ceram. Soc. Jpn. 130, 471-476 (2022). [Regular Issue: Special Article-Academic Achievements: The 76th CerSJ Awards for Academic Achievements in Ceramic Science and Technology: Review] (July 1, 2022) (DOI: 10.2109/jcersj2.22061) Free access

[1] Anup V. Sanchela*, Mian Wei, Hai Jun Cho, and Hiromichi Ohta*, “Optoelectronic properties of transparent oxide semiconductor ASnO₃ (A = Ba, Sr, and Ca) epitaxial films and thin film transistors”, J. Vac. Sci. Technol. A 40, 020803 (2022). [Honoring Dr. Scott Chambers’ 70th Birthday and His Leadership in the Science and Technology of Oxide Thin Films] (February 4, 2022) (DOI: 10.1116/6.0001474)

[1] Hiromichi Ohta, Qian Yang, Hyoungjeen Jeen, “Solid-State Electrochemical Control of Physical Properties for Transition Metal Oxide Epitaxial Films with Perovskite-Related Crystal Structures”, The American Ceramic Society 2022 Conference on Electronic Materials and Applications (EMA 2022), Orlando, FL (Hybrid), January 19-21, 2022 (Invited).

[2] 太田裕道, “ (学術賞受賞講演) 電子伝導性酸化物の薄膜化と熱電特性に関する研究”, 日本セラミックス協会 2022年 年会, オンライン, 2022年3月10日-12日.

[3] Mian Wei, Lizhikun Gong, Rui Yu, Hiromichi Ohta, Tsukasa Katayama, “(講演奨励賞受賞講演) Single-Crystalline La:SrSnO₃ Conductive Sheet with Wide Bandgap of 4.6 eV”, 2022年 第69回 応用物理学会 春季学術講演会, 青山学院大学 相模原キャンパス＋オンライン, 2022年3月22日-26日.

[Cancelled] Hiromichi Ohta, “Thermoelectric Material with Electrolyte Gate”, CIMTEC 2022, Montecatini Terme, Italy, June 20-29, 2022 (Invited).

[4] Hiromichi Ohta, “Thermoelectric Properties of Conducting Oxide Thin Films”, Physics Seminar in Pusan National University, online, 27th May, 2022 (Invited).

[5] Hiromichi Ohta, “Thermoelectric Oxide Thin Films”, 2022 Asian Conference on Nanoscience & Nanotechnology (AsiaNANO 2022), BEXCO, Busan, Korea, November 9-11, 2022 (Invited).

[1] 藤本卓嗣, 太田裕道, “(B-14) 熱電能電界変調法によるIGZO_m薄膜トランジスタの動作特性解析”, 第57回 応用物理学会北海道支部 第18回 日本光学会北海道支部 合同学術講演会, Zoom オンライン, 2022年1月8日-9日.

[2] 呉 礼奥, 張 習, 鶴田彰宏, 三上祐史, 張 雨橋, ジョヘジュン, 太田裕道, “(C-12) 酸化物熱電材料Ba_1/3CoO₂エピタキシャル薄膜の高温熱電特性”, 第57回 応用物理学会北海道支部 第18回 日本光学会北海道支部 合同学術講演会, Zoom オンライン, 2022年1月8日-9日.

[3] Binjie Chen, Gowoon Kim, Hai Jun Cho, and Hiromichi Ohta, “Room Temperature Insulator-to-Metal Transition of VO₂/TiO₂ Epitaxial Bilayers on (1-100) α-Al₂O₃“, 日本セラミックス協会 第60回セラミックス基礎科学討論会, 熊本大学, 2022年1月8日-9日.

[4] 楊 倩, イジュンヤク, ジンヒョンジン, 魏 家科, 馮 斌, 幾原雄一, ジョヘジュン, 太田裕道, “全固体熱トランジスタ”, 2022年 第69回 応用物理学会 春季学術講演会, 青山学院大学 相模原キャンパス＋オンライン, 2022年3月22日-26日.

[5] 福地 厚, 片瀬貴義, 太田裕道, 有田正志, 高橋庸夫, “イオン移動制御に基づくTaO_xへのアナログ的/確率論的抵抗変化機 能の選択的誘起と抵抗変化過程の直接観察”, 2022年 第69回 応用物理学会 春季学術講演会, 青山学院大学 相模原キャンパス＋オンライン, 2022年3月22日-26日.

[6] 陳 斌杰，張 雨橋，太田裕道, “サファイアM面基板上に成長させたルチル型Nb:TiO₂エピタキシャル薄膜の斜方晶歪みと光電子輸送特性”, 2022年 第69回 応用物理学会 春季学術講演会, 青山学院大学 相模原キャンパス＋オンライン, 2022年3月22日-26日.

[7] 藤本卓嗣，太田裕道, “熱電能電界変調法によるInGaO₃(ZnO)_m薄膜トランジスタの有効チャネル厚さ解析”, 2022年 第69回 応用物理学会 春季学術講演会, 青山学院大学 相模原キャンパス＋オンライン, 2022年3月22日-26日.

[8] 于 睿, 龔李治坤, 太田裕道, 片山 司, “水溶性Sr₃Al₂O₆層を利用したBa_3/4Sr_1/4TiO₃自立膜の作製”, 2022年 第69回 応用物理学会 春季学術講演会, 青山学院大学 相模原キャンパス＋オンライン, 2022年3月22日-26日.

[9] Hiromichi Ohta, Qian Yang, Gowoon Kim, and Xi Zhang, “Solid-State Electrochemical Control of Oxygen Contents in Transition Metal Oxide Thin Films with Perovskite-Related Crystal Structure”, 2022 MRS Spring Meeting & Exhibit, Honolulu, Hawaii & Virtual, May 8-13, 2022 (May 23-25, 2022).

[Cancelled] Xi Zhang, Gowoon Kim, Qian Yang, Jiake Wei, Bin Feng, Yuichi Ikuhara, Hiromichi Ohta, “Solid-State Electrochemical Switch of Superconductor-Metal-Insulators”, 23rd International Conference on Solid State Ionics (SSI-23), Boston Park Plaza, Boston, MA, July 17-22, 2022.

[10] 張 習, 張 雨橋, 呉 礼奥, 鶴田彰宏, 三上祐史, ジョヘジュン, 太田裕道, “Ba_1/3CoO₂: 空気中，600 °Cで信頼できるZT ~0.55を示す熱電酸化物”, 第19回 日本熱電学会学術講演会, アオーレ長岡, 2022年8月8日-10日

[11] Binjie Chen, Yuqiao Zhang, Katsuyuki Matsunaga, and Hiromichi Ohta, “Optoelectronic Properties of Orthorhombic-Distorted Nb:TiO₂ Films”, The 22nd International Vacuum Congress (IVC-22), Sapporo, Japan, September 11-16, 2022

[12] Atsushi Tsurumaki-Fukuchi, Takayoshi Katase, Hiromichi Ohta, Masashi Arita, and Yasuo Takahashi, “Direct Observation of Ion Migration in Amorphous TaO_x-Based Electronic Synapses”, The 22nd International Vacuum Congress (IVC-22), Sapporo, Japan, September 11-16, 2022

[13] 馮斌, 中出博暁, 栃木栄太, 柴田直哉, 幾原雄一, 太田裕道, “その場TEM観察を用いたジルコニア強靭化メカニズムの解明”, 日本セラミックス協会 第35回秋季シンポジウム, 徳島大学 常三島キャンパス（徳島県徳島市、ハイブリッド）, 2022年9月14日-16日

[14] 松下雄介, 藤井進, 吉矢真人, 張 雨橋, 太田裕道, 馮 斌, 幾原雄一, “Ba_1/3CoO₂でのカチオン配列およびフォノン特性の解析”, 日本金属学会 2022年 秋期 第171回 講演大会, 福岡工業大学（福岡県福岡市）, 2022年9月20日-23日

[15] 張 習, 張 雨橋, 呉 礼奥, 鶴田彰宏, 三上祐史, ジョヘジュン, 太田裕道, “Ba_1/3CoO₂: 空気中，600 °Cで信頼できるZT ~0.55を示す熱電酸化物”, 2022年 第83回 応用物理学会秋季学術講演会, 東北大学川内北キャンパス+オンライン, 2022年9月20日-23日

[16] 陳 斌杰，太田裕道, “VO₂/TiO₂多層膜の段階的絶縁体/金属転移”, 2022年 第83回 応用物理学会秋季学術講演会, 東北大学川内北キャンパス+オンライン, 2022年9月20日-23日

[17] 楊 卉，張 雨橋, 松尾保孝, 太田裕道, “高移動度InSnZnO_x薄膜トランジスタの熱電能電界変調”, 2022年 第83回 応用物理学会秋季学術講演会, 東北大学川内北キャンパス+オンライン, 2022年9月20日-23日

[18] 卞 志平，楊 倩，吉村充生，ジョヘジュン, 太田裕道, “SrCoO_x-SrFeO_x固溶体薄膜の電気化学酸化・還元と熱・電子輸送特性”, 2022年 第83回 応用物理学会秋季学術講演会, 東北大学川内北キャンパス+オンライン, 2022年9月20日-23日

[19] Lizhikun Gong, Mian Wei, Rui Yu, Hiromichi Ohta, Tsukasa Katayama, “Al₂O₃保護層を用いた深紫外透明導電性SrSnO₃自立シートの作製”, 2022年 第83回 応用物理学会秋季学術講演会, 東北大学川内北キャンパス+オンライン, 2022年9月20日-23日

[20] 于 睿，龔 李治坤, 太田裕道，片山 司, “PET基板に転写されたBa_xSr_1−xTiO₃ (x = 0.5)エピ膜の誘電特性”, 2022年 第83回 応用物理学会秋季学術講演会, 東北大学川内北キャンパス+オンライン, 2022年9月20日-23日

[21] 福地 厚，片瀬貴義，太田裕道，有田正志，高橋庸夫, “アモルファスTaO_xが示す抵抗変化現象の確率過程性に対する相構造の影響の観測”, 2022年 第83回 応用物理学会秋季学術講演会, 東北大学川内北キャンパス+オンライン, 2022年9月20日-23日

[22] Atsushi Tsurumaki-Fukuchi, Takayoshi Katase, Hiromichi Ohta, Masashi Arita, and Yasuo Takahashi, “Atomic scale characterization of the memory mechanisms of amorphous TaOx-based electronic synapses”, 14th International Symposium on Atomic Level Characterizations for New Materials and Devices ’22 (ALC ’22), Okinawa, Japan, October 16-21, 2022

[23] Shun-ichiro Ito, Kaito Kanahashi, Hisaaki Tanaka, Hiroshi Ito, Hiromichi Ohta and Taishi Takenobu, “The effect of side chain density on structure and thermoelectric properties of doped polythiophene films”, International Conference on Organic and Hybrid Thermoelectrics (ICOT 2022), Kitakyushu, Fukuoka, Japan, October 24-25, 2022

[24] Binjie Chen, Jinchuan Lin, Bin Feng, Yuichi Ikuhara, and Hiromichi Ohta, “Room Temperature Insulator-to-Metal Transition of Strained VO₂/TiO₂ Multilayered Films”, 令和4年度日本セラミックス協会東北北海道支部研究発表会, 伝国の杜（山形県米沢市）, 2022年11月10日-11日.

[25] Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, and Hiromichi Ohta, “Thermopower Modulation Analyses of High-mobility InSnZnO_x Thin-Film Transistors”, 令和4年度日本セラミックス協会東北北海道支部研究発表会, 伝国の杜（山形県米沢市）, 2022年11月10日-11日.優秀発表賞

[26] Zhiping Bian, Qian Yang, Mitsuki Yoshimura, Joonhyuk Lee, Hyoungjeen Jeen, Jinghuang Lin, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “Solid-State Electrochemical Thermal Transistors based on Sr(Co_1−xFe_x)O_y (0 ≤ x ≤ 1, 2 ≤ y ≤ 3) Films as Active Layers”, 令和4年度日本セラミックス協会東北北海道支部研究発表会, 伝国の杜（山形県米沢市）, 2022年11月10日-11日.

[27] 吉村充生, 楊 倩, 卞 志平, ジョヘジュン, 太田裕道, “全固体熱トランジスタに及ぼす固体電解質厚さの影響”, 令和4年度日本セラミックス協会東北北海道支部研究発表会, 伝国の杜（山形県米沢市）, 2022年11月10日-11日. (Poster) 優秀発表賞

[28] Binjie Chen and Hiromichi Ohta, “Room Temperature Insulator-to-Metal Transition of Strained VO₂/TiO₂ Multilayered Films”, 薄膜材料デバイス研究会 第19回研究集会 in 京都, 龍谷大学響都ホール（京都府京都市）, 2022年11月17日-18日.

[29] Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, and Hiromichi Ohta, ” Thermopower Modulation Analyses of High-mobility Transparent Amorphous Oxide Semiconductor InSnZnO_x Thin-Film Transistors”, 薄膜材料デバイス研究会 第19回研究集会 in 京都, 龍谷大学響都ホール（京都府京都市）, 2022年11月17日-18日. Best Paper Award

[30] Zhiping Bian, Qian Yang, Mitsuki Yoshimura, Joonhyuk Lee, Hyoungjeen Jeen, Jinghuang Lin, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “Solid-State Electrochemical Thermal Transistors based on Sr(Co_1−xFe_x)O_y (0 ≤ x ≤ 1, 2 ≤ y ≤ 3) Films as Active Layers”, 薄膜材料デバイス研究会 第19回研究集会 in 京都, 龍谷大学響都ホール（京都府京都市）, 2022年11月17日-18日.

[31] 吉村充生, 楊 倩, 卞 志平, ジョヘジュン, 太田裕道, “全固体熱トランジスタに及ぼす固体電解質厚さの影響”, 薄膜材料デバイス研究会 第19回研究集会 in 京都, 龍谷大学響都ホール（京都府京都市）, 2022年11月17日-18日.

[32] B. Feng, H. Nakade, E. Tochigi, H. Ohta, N. Shibata and Y. Ikuhara, “Investigation of phase transformation toughening mechanism in zirconia ceramics by in-situ TEM observation”, The 4th East-Asia Microscopy Conference (EAMC4), Taipei, Taiwan, December 1-4, 2022.

[33] Binjie Chen, Hiromichi Ohta, “Room Temperature Insulator-to-Metal Transition of Strained VO₂/TiO₂ Multilayered Films
“, The 23rd RIES-Hokudai International Symposium 拓 [Taku], Sapporo, Japan, December 5-6, 2022. Poster Award

[34] Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, and Hiromichi Ohta, “Origin of High-Mobility in Transparent Oxide Semiconductor Thin Film Transistors toward Super High-Definition Displays”, The 23rd RIES-Hokudai International Symposium 拓 [Taku], Sapporo, Japan, December 5-6, 2022. Poster Award

[35] Mitsuki Yoshimura, Qian Yang, Zhiping Bian, Hai Jun Cho, and Hiromichi Ohta, “Low Voltage Operation of Solid-State Thermal Transistors”, The 23rd RIES-Hokudai International Symposium 拓 [Taku], Sapporo, Japan, December 5-6, 2022.

[36] Prashant Ghediya, Hui Yang, Takashi Fujimoto, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, and Hiromichi Ohta
, “Electric Field Thermopower Modulation Analyses of Operation Mechanism of InGaO₃(ZnO)_m Thin Film Transistors”, The 23rd RIES-Hokudai International Symposium 拓 [Taku], Sapporo, Japan, December 5-6, 2022.

[37] Zhiping Bian, Qian Yang, Mitsuki Yoshimura, Joonhyuk Lee, Hyoungjeen Jeen, Jinghuang Lin, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “Thermal Conductivity Modulation in SrCoO_y – SrFeO_y Solid Solution by Electrochemical Redox Reaction”, The 23rd RIES-Hokudai International Symposium 拓 [Taku], Sapporo, Japan, December 5-6, 2022.

[38] Katelyn A. Kirchner, Jeem Melbert, Sohei Ogasawara, Hiromichi Ohta, Akihiro Suzuki, Tsukasa Katayama, Shinji Kohara, Tomoyuki Koganezawa, Rosantha Kumara, Junji Nishi, Yasutaka Matsuo, and Madoka Ono, “Exploration of the controllability of the atomic structure of film SiO₂ using crystal surfaces”, The 23rd RIES-Hokudai International Symposium 拓 [Taku], Sapporo, Japan, December 5-6, 2022.

[39] Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta, “Electric Field Thermopower Modulation Analyses of Transistor Characteristics of High-mobility In-Sn-Zn-O Thin Film Transistors”, The 29th International Display Workshops (IDW ’22), Fukuoka, Japan, December 14-16, 2022. Best Student Paper Award

[40] Prashant Ghediya, Hui Yang, Takashi Fujimoto, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta, “Electric Field Thermopower Modulation Analyses of Effective Channel Thickness of Amorphous InGaO₃(ZnO)_m Thin Film Transistors”, The 29th International Display Workshops (IDW ’22), Fukuoka, Japan, December 14-16, 2022 (poster). Outstanding Poster Paper Award

[1] Science Japan, “Insulator and high-temperature superconductor switching performed by Hokkaido University” (2022.02.08)

[2] 客観日本, “北海道大学成功实现绝缘体与高温超导体的切换，可用一个电开关反复控制” (2022.02.28) (in Chinese)

[3] 日刊工業新聞, “酸化物系熱電変換材、600℃で安定動作　北大・産総研が開発” (2022.07.13)

[4] “Efficient, Stable, and Eco-Friendly Thermoelectric Material Discovered”, (2022.07.13) Lab Manager

[5] “New Eco-Friendly Thermoelectric Material Can Resist Temperatures of 600 °C”, (2022.07.13) AZO Materials

[6] “Scientists discover reliable, stable, and environmentally beneficial thermoelectric material”, (2022.07.13) ThePrint

[7] “Efficient, stable, and eco-friendly thermoelectric material discovered”, (2022.07.13) ScienceDaily

[8] “Efficient, stable, and eco-friendly thermoelectric material discovered”, (2022.07.13) Bioengineer.org

[9] “Scientists discover reliable, stable, and environmentally beneficial thermoelectric material”, (2022.07.13) ANI

[10] “Researchers Synthesize Barium Cobalt Oxide Thermoelectric Converter, Potential Source of Energy Conservation”, (2022.07.13) The Science Times

[11] “Efficient, stable, and eco-friendly thermoelectric material discovered”, (2022.07.13) Swift Telecast

[12] “Science News | Scientists Discover Reliable, Stable, and Environmentally Beneficial Thermoelectric Material”, (2022.07.13) Latest LY

[13] “Efficient, stable, and eco-friendly thermoelectric material discovered”, (2022.07.13) Eurek Alert!

[14] “Efficient, stable, and eco-friendly thermoelectric material discovered”, (2022.07.13) Scienmag

[15] “Efficient, Stable, And Eco-Friendly Thermoelectric Material Discovered — ScienceDaily”, (2022.07.13) Verve Times

[16] “Efficient, stable, and eco-friendly thermoelectric material discovered”, (2022.07.13) Yark Story

[17] “Efficient, stable, and eco-friendly thermoelectric material discovered — ScienceDaily”, (2022.07.13) News Leaflets

[18] “Efficient, stable, and eco-friendly thermoelectric material discovered”, (2022.07.13) Flipboard

[19] “Efficient, stable, and eco-friendly thermoelectric material discovered”, (2022.07.13) One News Page

[20] “Efficient, stable, and eco-friendly thermoelectric material discovered”, The blog 101

[21] “Efficient, stable and environmentally friendly thermoelectric material discovered”, (2022.07.13) Short Saveall

[22] “Efficient, Stable, And Eco-Friendly Thermoelectric Material Discovered”, (2022.07.13) Whatsnew2day

[23] “Environment friendly, secure, and eco-friendly thermoelectric material discovered”, (2022.07.13) Zipponews

[24] “New material revolutionizes the reuse of heat to generate electricity”, (2022.07.13) Tecno Break

[25] “Environment friendly, steady, and eco-friendly thermoelectric materials found”, (2022.07.13) Orlando News Station

[26] “Researchers Discover A Sustainable Thermoelectric Material”, (2022.07.13) electronics foru.com

[27] “Environment friendly, secure, and eco-friendly thermoelectric materials found”, (2022.07.13) TechSardar

[28] “Efficient, stable and environmentally friendly thermoelectric material discovered”, (2022.07.13) TrainersAdda

[29] “Environment friendly, secure, and eco-friendly thermoelectric materials found”, (2022.07.13) One Day Deals

[30] “EFFICIENT, STABLE, AND ECO-FRIENDLY THERMOELECTRIC MATERIAL DISCOVERED”, (2022.07.13) ITdigitalSeva

[31] “Efficient, stable and environmentally friendly thermoelectric material discovered”, (2022.07.13) Somjournal

[32] “Efficient, stable and environmentally friendly thermoelectric material discovered”, (2022.07.13) Trendradars

[33] “Efficient, stable, and eco-friendly thermoelectric material discovered”, (2022.07.13) MondayDaily

[34] “Efficient, stable, and eco-friendly thermoelectric material discovered”, (2022.07.13) Happy Euro Anime

[35] “Scientists discover reliable, stable, and environmentally beneficial thermoelectric material”, (2022.07.13) NewKerala.com

[36] “Environment friendly, secure, and eco-friendly thermoelectric materials found”, (2022.07.13) Frayd US

[37] “Environment friendly, secure, and eco-friendly thermoelectric materials discovered”, (2022.07.13) The movies

[38] “高温・空気中で安定した性能を示す実用的な熱電変換材料を発見～再現性良く実用レベルの高性能を示す酸化物熱電材料～”, Tii技術情報

[39] “高温／空気中で安定した性能を示す熱電変換材料を発見――実用的な酸化物熱電材料　北大と産総研”, fabcross for エンジニア

[40] “Efficient, stable, and eco-friendly thermoelectric material discovered”, Phys.org

[41] “Technology Focus: Scientists discovered an eco-friendly thermoelectric material which is more efficient and stable to conduce the high heat”, AanWorld

[42] “Efficient, stable, and eco-friendly thermoelectric material discovered”, The Shastra

[43] “Efficient, stable, and eco-friendly thermoelectric material discovered”, NewsBreak

[44] “Scientists discover reliable, stable, and environmentally beneficial thermoelectric material”, BigNewsNetwork.com

[45] “发现高效、稳定、环保的热电材料”, 明日科学网

[46] “कुशल, स्थिर और पर्यावरण के अनुकूल थर्मोइलेक्ट्रिक सामग्री की खोज की गई”, zaroorat

[47] “Effizientes, stabiles und umweltfreundliches thermoelektrisches Werkstoff entdeckt”, Bunte Zeitung

[48] “Nutzlose Abwärme wird wertvoller Strom”, pressetext

[49] “北海道大学太田裕道教授团队《ACS AMI》：Ba1/3CoO2 — 一种高效、稳定、环境友好的热电材料”, Chem-MSE

[50] “熱を電気に変換する新材料、高温でも安定動作　北大など”, 日本経済新聞（電子版）(2022.7.22)

[51] “高温・空気中で安定した性能を示す実用的な熱電変換材料を発見 －再現性良く実用レベルの高性能を示す酸化物熱電材料－(産総研)”, CEMD.JP（2022年7月27日）

[52] “産総研など　高温・空気中で実用レベルの熱電変換材料”, 日刊ケミカルニュース（2022年7月25日）

[53] “熱電変換、高温でも安定動作”, 日経産業新聞 (2022年8月1日)

[54] “Thermoelectric devices without rare earths”, Institute of Materials, Minerals & Mining, 4 October 2022 by Nick Warburton

[55] “北大、透明酸化物半導体「ITZO」の高電子移動度の起源を解明”, マイナビニュース, 2022.10.11

[56] “北大，高性能透明酸化物の高電子移動度の起源解明”, オプトロニクスオンライン, 2022.10.11

[57] “北大、透明酸化物半導体「ITZO」の高電子移動度の起源を解明”, マピオン, 2022.10.11

[58] “北大、透明酸化物半導体「ITZO」の高電子移動度の起源を解明”, BIGLOBE, 2022.10.11

[59] “北大、透明酸化物半導体「ITZO」の高電子移動度の起源を解明”, NEWS PICKS, 2022.10.11

[60] “北大、透明酸化物半導体「ITZO」の高電子移動度の起源を解明”, Rakuten Infoseek News, 2022.10.11

[61] “Clarification of material properties for clearly better displays”, Mirage, 2022.10.14

[62] “Clarification of material properties for clearly better displays”, AlphaGalileo, 2022.10.14

[63] “Clarification of material properties for clearly better displays”, nanowerk, 2022.10.14

[64] “Analyzing a new material that promises faster, higher resolution displays”, Phys.org, 2022.10.14

[65] “Clarification of material properties for clearly better displays”, ScienceDaily, 2022.10.14

[66] “Clarification of material properties for clearly better displays”, Day to news.com, 2022.10.15

[67] “Clarification Of Material Properties For Clearly Better Displays”, VerveTimes, 2022.10.15

[68] “Clarification Of Material Properties For Clearly Better Displays”, SWIFT TELECAST, 2022.10.15

[69] “Analyzing A New Material That Promises Faster, Higher Resolution Displays”, SWIFT TELECAST, 2022.10.15

[70] “Clarification of material properties for clearly better displays”, Asia Research News, 2022.10.15

[71] “Clarification of fabric properties for clearly higher shows”, NM PRO News Magazine, 2022.10.16

[72] “Clarify material properties for better presentations with clarity”, precaliga, 2022.10.15

[73] “Clarification of material properties for dramatically better visualizations”, pandora-uk.org, 2022.10.15

[74] “重磅！ITZO电子迁移率是IGZO的5倍以上”, Wit OLED, 2022.10.15

[75] “New Material Offers Faster and Higher Resolution Displays”, AZO Materials, 2022.10.17

[13] Hui Yang, Best Student Paper Award, The 29th International Display Workshops (IDW ’22), Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta, “Electric Field Thermopower Modulation Analyses of Transistor Characteristics of High-mobility In-Sn-Zn-O Thin Film Transistors”, The 29th International Display Workshops (IDW ’22), Fukuoka, Japan, December 14-16, 2022.

[12] Prashant Ghediya, Outstanding Poster Paper Award, The 29th International Display Workshops (IDW ’22), Prashant Ghediya, Hui Yang, Takashi Fujimoto, Yuqiao Zhang, Yasutaka Matsuo, Hiromichi Ohta, “Electric Field Thermopower Modulation Analyses of Effective Channel Thickness of Amorphous InGaO₃(ZnO)_m Thin Film Transistors”, The 29th International Display Workshops (IDW ’22), Fukuoka, Japan, December 14-16, 2022 (poster).

[11] Hui Yang, Poster Award, The 23rd RIES-Hokudai International Symposium, Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, and Hiromichi Ohta, “Origin of High-Mobility in Transparent Oxide Semiconductor Thin Film Transistors toward Super High-Definition Displays”, The 23rd RIES-Hokudai International Symposium 拓 [Taku], Sapporo, Japan, December 5-6, 2022.

[10] Binjie Chen, Poster Award, The 23rd RIES-Hokudai International Symposium, Binjie Chen, Hiromichi Ohta, “Room Temperature Insulator-to-Metal Transition of Strained VO₂/TiO₂ Multilayered Films“, The 23rd RIES-Hokudai International Symposium 拓 [Taku], Sapporo, Japan, December 5-6, 2022.

[9] Hui Yang, Best Paper Award, 薄膜材料デバイス研究会 第19回研究集会 in 京都, Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, and Hiromichi Ohta, ” Thermopower Modulation Analyses of High-mobility Transparent Amorphous Oxide Semiconductor InSnZnO_x Thin-Film Transistors” (2022.11.18)

[8] 吉村充生, 優秀発表賞, 令和4年度日本セラミックス協会東北北海道支部研究発表会,吉村充生, 楊 倩, 卞 志平, ジョヘジュン, 太田裕道, “全固体熱トランジスタに及ぼす固体電解質厚さの影響” (2022.11.11)

[7] Hui Yang, 優秀発表賞, 令和4年度日本セラミックス協会東北北海道支部研究発表会, “Thermopower Modulation Analyses of High-mobility InSnZnO_x Thin-Film Transistors”, Hui Yang, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, and Hiromichi Ohta (2022.11.11)

[6] Hiromichi Ohta, CerSJ Awards for academic achievements in ceramic science and technology (2022.6.9)

[5] Qian Yang, FY2021 Dean’s Award, Graduate School of Information Science and Technology, Hokkaido University (2022.03.24)

[4] Mian Wei, JSAP the 51st Young Scientist Presentation Award, “Single-Crystalline La:SrSnO₃ Conductive Sheet with Wide Bandgap of 4.4 eV”, Mian Wei, Lizhikun Gong, Rui Yu, Hai Jun Cho, Hiromichi Ohta, Tsukasa Katayama

[3] Qian Yang, Ohtsuka Memorial Award, Hokkaido University (2022.3.17)

[2] Gowoon Kim, Ohtsuka Memorial Award, Hokkaido University (2022.3.17)

[1] Xi Zhang, The 51st Matsumoto-Hatori Award, Research Institute for Electronic Science, Hokkaido University (2022.2.14)

[19] Hai Jun Cho*, Yuzhang Wu, Jiajun Qi, Yuna Kim, and Hiromichi Ohta, Osamu Matsuda*, “Specular acoustic vibrational wave transmissions with the presence of phononic bandgaps”,  J. Phys. Soc. Japan 91, 014601 (2022). (December 3, 2021) (DOI: 10.7566/JPSJ.91.014601)

[18] Hiroaki Nakade, Eita Tochigi, Bin Feng, Ryo, Ishikawa, Hiromichi Ohta, Naoya Shibata, Yuichi Ikuhara, “Effect of annealing on grain growth and Y segregation behavior in tetragonal ZrO₂ thin film”, J. Am. Ceram. Soc. 105, 2300-2308 (2022). (November 11, 2021) (DOI: 10.1111/jace.18217) JSPS-CORE Project

[17] Xi Zhang*, Gowoon Kim, Qian Yang, Jiake Wei, Bin Feng, Yuichi Ikuhara, and Hiromichi Ohta*, “Solid-State Electrochemical Switch of Superconductor-Metal-Insulators”, ACS Appl. Mater. Interfaces 13, 54204-54209 (2021). (November 4, 2021) (DOI: 10.1021/acsami.1c17014) Network Joint Research Center for Materials and Devices  JSPS-CORE Project，YouTube

[16] Shun-ichiro Ito, Kaito Kanahashi, Hiromichi Ohta, Hiroshi Ito, Taishi Takenobu* and Hisaaki Tanaka*, “Structure and thermoelectric properties in electrochemically doped polythiophene thin films: effect of side chain density”, Appl. Phys. Lett. 119, 183304 (2021). (November 2, 2021) (DOI: 10.1063/5.0067769) Network Joint Research Center for Materials and Devices

[15] Beibei Qiao, Yixiao Jianga, Tingting Yaoa, Ang Tao, Xuexi Yan, Chunyang Gao, Xiang Li, Hiromichi Ohta, Chunlin Chen*, Xiu-Liang Ma, Hengqiang Ye, “Microstructure and electronic properties of La₂Ti₂O₇ thin films on SrTiO₃ substrates”, Appl. Surf. Sci. (2021). (October 19, 2021) (DOI: 10.1016/j.apsusc.2021.151599) International collaboration

[14] Binjie Chen*, Gowoon Kim, Hai Jun Cho, and Hiromichi Ohta*, “Room Temperature Insulator-to-Metal Transition of VO₂ / TiO₂ Epitaxial Bilayer Films Grown on M-plane Sapphire Substrates”, Adv. Electron. Mater. 2100687 (2021). (October 19, 2021) (DOI: 10.1002/aelm.202100687)

[13] Joonhyuk Lee, Younghak Kim, Jinhyung Cho, Hiromichi Ohta*, and Hyoungjeen Jeen*, “Overlayer deposition-induced control of oxide ion concentration in SrFe_0.5Co_0.5O_2.5 oxygen sponges”, RSC Adv. 11, 32210 (2021). (September 29, 2021) (DOI: 10.1039/D1RA06378B) International collaboration

[12] James A. Quirk, Bin Miao, Bin Feng, Gowoon Kim, Hiromichi Ohta, Yuichi Ikuhara, and Keith P. McKenna, “Unveiling the Electronic Structure of Grain Boundaries in Anatase with Electron Microscopy and First-Principles Modelling”, Nano Lett. 21, 9217-9223 (2021). (November 1, 2021) (DOI: 10.1021/acs.nanolett.1c03099) International collaboration

[11] Takayoshi Katase*, Xinyi He, Terumasa Tadano, Jan M. Tomczak, Takaki Onozato, Keisuke Ide, Bin Feng, Tetsuya Tohei, Hidenori Hiramatsu, Hiromichi Ohta, Yuichi Ikuhara, Hideo Hosono, and Toshio Kamiya*, “Breaking of thermopower – conductivity trade-off in LaTiO₃ film around Mott insulator to metal transition”, Adv. Sci. 8, 2102097 (2021). (October 21, 2021) (DOI: 10.1021/advs.202102097)

[10] Gowoon Kim*, Hai Jun Cho, and Hiromichi Ohta*, “Reversible Redox Control of Optoelectronic Properties of Hexagonal Tungsten Oxide Epitaxial Films Grown on YSZ Solid Electrolyte”, ACS Appl. Electron. Mater. 3, 3619-3624 (2021). (August 6, 2021) (DOI: 10.1021/acsaelm.1c00522)

[9] Shun Sasano, Ryo Ishikawa*, Gabriel Sánchez-Santolino, Hiromichi Ohta, Naoya Shibata, and Yuichi Ikuhara*, “Atomistic Origin of Li-Ion Conductivity Reduction at (Li_3xLa_2/3−x)TiO₃ Grain Boundary”  Nano Lett. 21, 6282–6288 (2021). (July 19, 2021) (DOI:10.1021/acs.nanolett.1c02174) JSPS-CORE Project

[8] Qian Yang*, Joonhyuk Lee, Hyoungjeen Jeen, Hai Jun Cho, and Hiromichi Ohta*, “Solid-State Electrochemical Protonation of SrCoO_2.5 into H_xSrCoO_2.5 (x = 1, 1.5 and 2)”,  ACS Appl. Electron. Mater. 3, 3296–3300 (2021). (July 14, 2021) (DOI: 10.1021/acsaelm.1c00505)  International collaboration

[7] Ang Tao, Tingting Yao, Yixiao Jiang, Lixin Yang, Chunlin Chen*, Xuexi Yan, Hiromichi Ohta, Yuichi Ikuhara, Hengqiang Ye, and Xiu-Liang Ma*, “Single-dislocation Schottky diodes”, Nano Lett. 21, 5586–5592 (2021). (June 17, 2021) (DOI: 10.1021/acs.nanolett.1c01081)  International collaboration

[6] Qian Yang*, Hai Jun Cho, Hyoungjeen Jeen, and Hiromichi Ohta*, “Solid-State Electrochemical Redox Control of the Optoelectronic Properties for SrFeO_x Thin Films”, J. Appl. Phys. 129, 215303 (2021). (June 2, 2021) (DOI: 10.1063/5.0053939)  International collaboration

[5] Jiajun Qi, Yuzhang Wu, Hai Jun Cho*, Yuna Kim*, Hiromichi Ohta, and Nobuyuki Tomaoki, “Pressure-tunable thermal conductivity observed from bisamide functionalized diacetylene crystals”, J. Mater. Sci. (2021). (June 22, 2021) (DOI: 10.1007/s10853-021-06192-7) RIES

[4] Shuji Kawasaki, Akitoshi Nakano, Hiroki Taniguchi, Hai Jun Cho, Hiromichi Ohta, Fumihiko Nakamura, and Ichiro Terasaki*, “Thermal diffusivity of the Mott insulator Ca₂RuO₄ in a non-equilibrium steady state”, J. Phys. Soc. Jpn. 90, 063601 (2021). (May 19, 2021) (DOI: 10.7566/JPSJ.90.063601) JSPS-CORE Project, Network Joint Research Center for Materials and Devices

[3] Yuqiao Zhang*, Hai Jun Cho, Kenyu Sugo, Masashi Mikami, Sungmin Woo, Myung-Chul Jung, Yao-Hua Zhuang, Bin Feng, Yu-Miin Sheu, Woosuck Shin, Woo Seok Choi, Myung Joon Han, Yuichi Ikuhara, and Hiromichi Ohta*, “Low thermal conductivity of SrTiO₃−LaTiO₃ and SrTiO₃-SrNbO₃ thermoelectric oxide solid solutions”, J. Am. Ceram. Soc. 104, 4075-4085 (2021). (March 26, 2021) (DOI: 10.1111/jace.17797) International collaboration, JSPS-CORE Project, Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials, Network Joint Research Center for Materials and Devices

[2] Hai Jun Cho*, Yuzhang Wu, Yuqiao Zhang, Bin Feng, Masashi Mikami, Woosuck Shin, Yuichi Ikuhara, Yu-Miin Sheu, Keiji Saito, and Hiromichi Ohta*, “Anomalously Low Heat Conduction in Single-Crystal Superlattice Ceramics Lower than Randomly Oriented Polycrystals”, Adv. Mater. Interfaces 2001932 (2021). (February 15, 2021) (DOI: 10.1002/admi.202001932) International collaboration, JSPS-CORE Project, Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials, Network Joint Research Center for Materials and Devices, Inside Back Cover, Hokkaido University Japanese Press Release

[1] Gowoon Kim*, Bin Feng, Sangkyun Ryu, Hai Jun Cho, Hyoungjeen Jeen, Yuichi Ikuhara, and Hiromichi Ohta*, “Anisotropic Electrical Conductivity of Oxygen-Deficient Tungsten Oxide Films with Epitaxially Stabilized 1D Atomic Defect Tunnels”, ACS Appl. Mater. Interfaces 13, 6864-6869 (2021). (January 28, 2021) (DOI: 10.1021/acsami.0c21240) International collaboration, JSPS-CORE Project, Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials, Network Joint Research Center for Materials and Devices

[2] Sheng-Ying Chou, Hiroshi Masai, Masaya Otani, Gentaro Sakamoto, Yusuke Yamada, Yusuke Kinoshita, Hitoshi Tamiaki, Takayoshi Katase, Hiromichi Ohta, Tomoki Kondo, Akinobu Nakada, Ryu Abe, Takahisa Tanaka, Ken Uchida, and Jun Terao*, “Perfect isolation of π-conjugated molecules on inorganic surfaces with [1]rotaxane structure for enhancing electrical properties”, Research Square (DOI:10.21203/rs.3.rs-464533/v1) Network Joint Research Center for Materials and Devices

[1] Hai Jun Cho, Yuzhang Wu, Youngha Kwon, Jiajun Qi, Yuna Kim, Keiji Saito, Hiromichi Ohta, “Anisotropic heat conduction of coherently transported phonons in InGaO₃(ZnO)_m single crystal films with superlattice structures”, arXiv:2108.04970v1   CORE Project, RIES

[3] 太田裕道, “安心・安全な熱電変換材料を目指して－優れた変換性能をもつ層状酸化物Ba_1/3CoO₂“, 化学 Vol. 76, No. 6 68-69 (2021). (2021.6.1)

[2] 太田裕道, “過去最高の室温熱電変換性能を示す酸化物の実現”, クリーンエネルギー 30 (3), 46-49 (2021). (2021.3.10)

[1] 太田裕道, “エレクトロクロミック素子の開発最前線－遷移金属酸化物の多彩な物性変化を利用してー”, 學士會会報 947, 81-85 (2021). (2021.3.1)

[1] Atsushi Tsurumaki-Fukuchi, Takayoshi Katase, Hiromichi Ohta, Masashi Arita, and Yasuo Takahashi, “Nanoscale Probing of Field-Driven Ion Migration in TaO_x for Neuromorphic Memristor Applications”, ECS Transactions 104, 93 (2021). https://doi.org/10.1149/10404.0093ecst

[1] 太田裕道, “金属酸化物薄膜の熱電能・熱伝導”, 2021年 第68回 応用物理学会春季学術講演会, シンポジウム「ニュ―ノーマル時代のDXを進めるIoT用創エネルギー材料・デバイス研究の新展開」, online, 2021.3.16-19 (Invited)

[2] 太田裕道, “導電性酸化物薄膜の熱電変換特性”, 日本学術振興会 R025委員会 ８月研究会「エナジーハーベスティングデバイスの新材料・新構造・新プロセス（熱電変換，太陽電池）」, 2021.8.23 (Invited)

[3] Hai Jun Cho, Hiromichi Ohta, “Utilization of anisotropic materials in thermal management technologies”, International Conference on Condensed Matter and Device Physics – 2021, 2021.9.9-11 (Invited)

[4] 太田裕道, “反応性固相エピタキシャル成長法＋イオン交換法 ―層状酸化物エピタキシャル薄膜を作る方法―”, 第82回 応用物理学会秋季学術講演会 シンポジウム「固相における秩序とは何か：機能を生み出す秩序の概念展開」（世話人：山本哲也 教授（高知工科大））, 2021.9.11 (Invited)

[5] Gowoon Kim, Bin Feng, Yu-Miin Sheu, Sangkyun Ryu, Hyoungjeen Jeen, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “Thermoelectric Properties of Tungsten Oxide Epitaxial Films”, 2021 KPS Fall Meeting, Virtual, October 20-22. (Invited)

[6] Hiromichi Ohta, “Thermoelectric Energy Conversion using Metal Oxide Thin Films”, The 22nd RIES-HOKUDAI International Symposium, December 5-7, 2021. (Invited)

[1] G. Kim, B. Feng, S. Ryu, H. Jeen, H.J. Cho, Y. Ikuhara, and H. Ohta, “Anisotropy in the electrical conductivity of oxygen deficient WO_x with 1D atomic defect tunnels”, 第56回 応用物理学会北海道支部/第17回日本光学会北海道支部合同学術講演会, online, 2021.1.9-10.

[2] M. Wei. H.J. Cho, and H. Ohta, “Optoelectronic properties of La-doped CaSnO₃-SrSnO₃-BaSnO₃“, 第56回 応用物理学会北海道支部/第17回日本光学会北海道支部合同学術講演会, online, 2021.1.9-10.

[3] Q. Yang, J. Lee, H. Jeen, B. Feng, Y. Ikuhara, H.J. Cho, and H. Ohta, “Realization of SrCoO₂ epitaxial films by electrochemical reduction using YSZ solid electrolyte”, 第56回 応用物理学会北海道支部/第17回日本光学会北海道支部合同学術講演会, online, 2021.1.9-10.

[4] Binjie Chen, Gowoon Kim, Hai Jun Cho, and Hiromichi Ohta, “Modulation of the Metal-to-Insulator Transition Behavior of VO₂ Epitaxial Films by Insertion of TiO₂ Layers”, 第56回 応用物理学会北海道支部/第17回日本光学会北海道支部合同学術講演会, online, 2021.1.9-10. 発表奨励賞

[5] 藤本卓嗣, ジョヘジュン, 太田裕道, “水素還元LaドープBaSnO₃エピタキシャル薄膜のキャリア移動度向上”, 第56回 応用物理学会北海道支部/第17回日本光学会北海道支部合同学術講演会, online, 2021.1.9-10.

[6] Gowoon Kim, Bin Feng, Yuichi Ikuhara, Yu-Miin Sheu, Hai Jun Cho, and Hiromichi Ohta, “Phonon-Glass and Electron-Crystal Behavior of WO_x Films containing 1D Atomic Defect Tunnels”, Electronic Materials and Applications 2021 (EMA2021), virtual, Jan. 19-22, 2021.

[7] Qian Yang, Joonhyuk Lee, Hyoungjeen Jeen, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “Solid-state Electrochemical Protonation / Oxidation of SrCoO_x Films”, Electronic Materials and Applications 2021 (EMA2021), virtual, Jan. 19-22, 2021.

[8] Binjie Chen, Gowoon Kim, Hai Jun Cho, and Hiromichi Ohta, “Modulation of the Metal-to-Insulator Transition Behavior of VO₂ Films”, 2021年 第68回 応用物理学会春季学術講演会, online, 2021.3.16-19.

[9] Gowoon Kim, Bin Feng, Yu-Miin Sheu, Sangkyun Ryu, Hyoungjeen Jeen, Hai Jun Cho, and Hiromichi Ohta, “Thermoelectric Properties of Tungsten Oxide Films with 1D Atomic Defect Tunnels”, 2021年 第68回 応用物理学会春季学術講演会, online, 2021.3.16-19.

[10] Mian Wei, Hai Jun Cho, and Hiromichi Ohta, “Band Engineering of Transparent Oxide Semiconductor ASnO₃ (A = Ba, Ca, and Sr)”, 2021年 第68回 応用物理学会春季学術講演会, online, 2021.3.16-19.

[11] Q. Yang, J. Lee, H. Jeen, J. Wei, B. Feng, Y. Ikuhara, H.J. Cho, and H. Ohta, “Electrochemical Redox reaction of SrCoO_2.5 films using YSZ oxide ion conductor”, 2021年 第68回 応用物理学会春季学術講演会, online, 2021.3.16-19.

[12] Xi Zhang, Gowoon Kim, Qian Yang, Hai Jun Cho, and Hiromichi Ohta, “Electrochemical modulation of superconducting properties in YBa₂Cu₃O_7-δ Films”, 2021年 第68回 応用物理学会春季学術講演会, online, 2021.3.16-19.

[13] Y. Zhang, Y. Takashima, L. Wu, H.J. Cho, and H. Ohta, “Temperature Dependence of Thermoelectric Properties of Ba_1/3CoO₂ Epitaxial Films”, 2021年 第68回 応用物理学会春季学術講演会, online, 2021.3.16-19.

[14] Y. Wu, H.J. Cho, Y. Zhang, B. Feng, M. Mikami, W. Shin, Y. Ikuhara, Y. Sheu, K. Saito, and H. Ohta, “Anomalously Low Heat Conduction in Single-Crystal Superlattice Ceramics Lower than Randomly Oriented Polycrystals”, 2021年 第68回 応用物理学会春季学術講演会, online, 2021.3.16-19.

[15] Hai Jun Cho, Youngha Kwon, Yuzhang Wu, and Hiromichi Ohta, “Anisotropic Heat Conduction of Coherent Phonons in Superlattices”, 2021年 第68回 応用物理学会春季学術講演会, online, 2021.3.16-19.

[16] 藤原宏平, 北村未歩, 志賀大亮, 丹羽尉博, 堀場弘司, 野島 勉, 太田裕道, 組頭広志, 塚﨑 敦, “Ru置換Cr₂O₃薄膜における絶縁体金属転移とRu³⁺状態”, 2021年 第68回 応用物理学会春季学術講演会, online, 2021.3.16-19.

[17] Yuqiao Zhang, Yugo Takashima, Liao Wu, Jiake Wei, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “Late News: Ba_1/3CoO₂, a Promising Candidate for Oxide Thermoelectric Material”, 2021 Virtual MRS Spring Meeting & Exhibit (Symposium NM08—Nanoscale Heat Transport—Fundamentals), Virtual, April 17-23, 2021.

[18] Hai Jun Cho and Hiromichi Ohta, “Late News: Anisotropic Heat Conduction of Coherent Phonons in Defect-Free Superlattices”, 2021 Virtual MRS Spring Meeting & Exhibit (Symposium NM08—Nanoscale Heat Transport—Fundamentals), Virtual, April 17-23, 2021.

[19] Mian Wei, Hai Jun Cho, and Hiromichi Ohta, “Tuning of the Optoelectronic Properties for Transparent Oxide Semiconductor ASnO₃ by Modulating the Size of A-ions”, The 8th International Congress on Ceramics (ICC8), Virtual, April 25-30, 2021.

[20] Gowoon Kim, Bin Feng, Yu-Miin Sheu, Sangkyun Ryu, Hyoungjeen Jeen, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “Thermoelectric properties of 1D atomic defect tunnels stabilized tungsten oxide epitaxial film”, The 8th International Congress on Ceramics (ICC8), Virtual, April 25-30, 2021. (Highlighted in the conference website “Closing remarks”)

[21] Hiroaki Nakade, Eita Tochigi, Bin Feng, Hiromichi Ohta, Naoya Shibata, and Yuichi Ikuhara, “Direct observation of martensitic phase transformation of yttria stabilized zirconia induced by crack propagation”, The 8th International Congress on Ceramics (ICC8), Virtual, April 25-30, 2021.

[22] Binjie Chen, Gowoon Kim, Hai Jun Cho, Hiromichi Ohta, “Reduction of the Tc and suppression of the ΔT_c of VO₂ epitaxial films on TiO₂ buffered sapphire substrate (FF02)”, 63rd Electronic Materials Conference (EMC 2021), Virtual, June 23-25, 2021

[23] Xi Zhang, Gowoon Kim, Qian Yang, Hai Jun Cho, and Hiromichi Ohta, “Electrochemical-redox-modulation of the oxygen content in superconducting YBa₂Cu₃O_7-δ (FF03)”, 63rd Electronic Materials Conference (EMC 2021), Virtual, June 23-25, 2021

[24] Mian Wei, Hai Jun Cho, and Hiromichi Ohta, “Modulation of Optical and Electronical Properties for Transparent Oxide Semiconductor ASnO₃ by the A-site ion substitution (GG02)”, 63rd Electronic Materials Conference (EMC 2021), Virtual, June 23-25, 2021

[25] Chen, G. Kim, H.J. Cho, H. Ohta, “Lattice Strain and Insulator-to Metal Transition of VO₂ / TiO₂ Epitaxial Bilayer Films Grown on M-plane Sapphire Substrates”, 第82回 応用物理学会秋季学術講演会, ハイブリッド開催（名城大学 & online）, 2021.9.10-13.

[26] G. Kim, H.J. Cho, H Ohta, “Reversible Redox Control of Optoelectronic Properties of Hexagonal Tungsten Oxide Epitaxial Films Grown on YSZ Solid Electrolyte”, 第82回 応用物理学会秋季学術講演会, ハイブリッド開催（名城大学 & online）, 2021.9.10-13.

[27] H.J. Cho, Y. Wu, J. Qi, Y. Kim, H. Ohta, O. Matsuda, “Acoustic Vibrational Wave Transmissions at Metal-Superlattice Interfaces”, 第82回 応用物理学会秋季学術講演会, ハイブリッド開催（名城大学 & online）, 2021.9.10-13.

[28] L. Wu, Y. Zhang, X. Zhang, H.J. Cho, H. Ohta, “Temperature Dependence of Thermoelectric Properties of Ba_1/3CoO₂ Epitaxial Films”, 第82回 応用物理学会秋季学術講演会, ハイブリッド開催（名城大学 & online）, 2021.9.10-13.

[29] Q. Yang, H.J. Cho, H. Jeen, H Ohta, “Solid-state electrochemical redox control of the optoelectronic properties for SrFeO_x thin films”, 第82回 応用物理学会秋季学術講演会, ハイブリッド開催（名城大学 & online）, 2021.9.10-13.

[30] X. Zhang, Y. Zhang, L. Wu, H.J. Cho, H. Ohta, “High-Temperature Thermoelectric Figure of Merit of Ba_1/3CoO₂ Epitaxial Films”, 第82回 応用物理学会秋季学術講演会, ハイブリッド開催（名城大学 & online）, 2021.9.10-13.

[31] M. Wei, H.J. Cho, H. Ohta, “Electrochemical Control of the Optoelectronic Properties of La-doped BaSnO₃ Epitaxial Films using YSZ as the Solid Electrolyte”, 第82回 応用物理学会秋季学術講演会, ハイブリッド開催（名城大学 & online）, 2021.9.10-13.

[32] M. Wei, L. Gong, R. Yu, H.J. Cho, H. Ohta, T. Katayama, “Single-Crystalline La:SrSnO₃ Conductive Sheet with Wide Bandgap of 4.2 eV”, 第82回 応用物理学会秋季学術講演会, ハイブリッド開催（名城大学 & online）, 2021.9.10-13.

[33] 福地 厚，片瀬貴義，太田裕道，有田正志，高橋 庸夫, “原子平坦アモルファス薄膜を用いたTaO_xのアナログメモリ動作過程の直接観察
“, 第82回 応用物理学会秋季学術講演会, ハイブリッド開催（名城大学 & online）, 2021.9.10-13.

[34] Takaki Sakai, Michihiko Yamanouchi, Yasufumi Araki, Tetsuya Uemura, Hiromichi Ohta, and Jun’ichi Ieda, “Temperature dependence of current-induced effective magnetic field acting on domain wall in SrRuO₃“, 第82回 応用物理学会秋季学術講演会, ハイブリッド開催（名城大学 & online）, 2021.9.10-13. (Poster)

[35] Xi Zhang, Yuqiao Zhang, Liao Wu, Hai Jun Cho, Hiromichi Ohta, “Ba_1/3CoO₂, A Promising High-Temperature Thermoelectric Oxide”, 1st Japan-France Virtual Workshop on Thermoelectrics (VWT2021), online, 2021.9.27-30.

[36] H.J. Cho, Y. Wu, Y. Zhang, B. Feng, M. Mikami, W. Shin, Y. Ikuhara, Y-M. Sheu, K. Saito, H. Ohta, “Anomalously low heat conduction in single-crystal superlattice ceramics lower than randomly oriented polycrystals”, 1st Japan-France Virtual Workshop on Thermoelectrics (VWT2021), online, 2021.9.27-30. Oral presentation award

[37] Qian Yang, Joonhyuk Lee, Hyoungjeen Jeen, Hai Jun Cho, and Hiromichi Ohta, “Solid-State Electrochemical Protonation Induced Phase Transition from SrCoO_2.5 into H_xSrCoO_2.5 (x = 1, 1.5 and 2)”, 薄膜材料デバイス研究会 第18回研究集会 in 京都, オンライン同時開催, 2021.11.11-12. Student award

[38] Binjie Chen, Tetsuya Hasegawa, Hiromichi Ohta, Tsukasa Katayama, “Temperature driven Anti- to Ferroelectric Phase Transition in Hexagonal DyFeO₃ Films”, 薄膜材料デバイス研究会 第18回研究集会 in 京都, オンライン, 2021.11.11-12

[39] Lizhikun Gong, Mian Wei, Hiromichi Ohta, Tsukasa Katayama, “Transfer of oxide electrode sheet with wide bandgap of 4.6 eV”, 薄膜材料デバイス研究会 第18回研究集会 in 京都, オンライン, 2021.11.11-12

[40] Yuqiao Zhang, Xi Zhang, Liao Wu, Yugo Takashima, Jiake Wei, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “Promising High Temperature Thermoelectric Properties of Ba_1/3CoO₂”, 12th International Conference on High-Performance Ceramics (CICC-12), Suzhou, China, 2021.11.14-17

[41] 藤本卓嗣, 太田裕道, “熱電能電界変調法によるIGZO_m薄膜トランジスタの動作特性解析”, 令和3年度日本セラミックス協会東北北海道支部研究発表会, online, 2021.11.18-19（ポスター）

[42] 呉 礼奥, 張 雨橋, 張 習, ジョ へジュン, 太田裕道, “Ba_1/3CoO₂エピタキシャル薄膜の熱電特性の温度依存性”, 令和3年度日本セラミックス協会東北北海道支部研究発表会, online, 2021.11.18-19（ポスター）

[43] L. Gong, M. Wei, H. Ohta, T. Katayama, “Transfer of oxide electrode sheet with wide bandgap of 4.6 eV “, 令和3年度日本セラミックス協会東北北海道支部研究発表会, online, 2021.11.18-19

[44] B. Chen, T. Hasegawa, H. Ohta, T. Katayama, “Temperature induced Anti- to Ferroelectric Transition in Hexagonal DyFeO₃ Films”, 令和3年度日本セラミックス協会東北北海道支部研究発表会, online, 2021.11.18-19

[45] 佐々野駿，石川亮，太田裕道，柴田直哉，幾原雄一, “(Li,La)TiO₃対称傾角粒界における原子・電子構造およびイオン伝導特性”, 第62回電池討論会, ハイブリッド, 2021.11.30-12.2

[46] Binjie Chen, Tetsuya Hasegawa, Hiromichi Ohta, Tsukasa Katayama, “Antiferroelectric to Ferroelectric Phase Transition in Hexagonal DyFeO₃ Films”, The 22nd RIES-HOKUDAI International Symposium, December 5-7, 2021. (Poster)

[47] Lizhikun Gong, Mian Wei, Hiromichi Ohta, Tsukasa Katayama, “Transfer of oxide electrode sheet with wide bandgap of 4.6 eV”, The 22nd RIES-HOKUDAI International Symposium, December 5-7, 2021. (Poster)

[48] Liao Wu, Yuqiao Zhang, Xi Zhang, Hai Jun Cho, Hiromichi Ohta, “Temperature Dependence of Thermoelectric Properties of Ba_1/3CoO₂ Epitaxial Films”, The 22nd RIES-HOKUDAI International Symposium, December 5-7, 2021. (Poster)

[49] Takashi Fujimoto, Hiromichi Ohta, “Electric Field Thermopower Modulation Analyses of the Electronic Structure of InGaO₃(ZnO)_m (m = integer) toward High-Performance Oxide TFTs”, The 22nd RIES-HOKUDAI International Symposium, December 5-7, 2021. (Poster)

[1] OPTRONICS ONLINE, “北大ら，多結晶より熱が伝わりにくい単結晶を発見”, 2021年2月16日

[2] fabcross for エンジニア, “電気スイッチ一つで絶縁体を高超伝導体に繰り返し切り替え――全固体素子で液漏れの心配なし　北海道大” (2021.11.22)

[3] マイナビニュース, “北大、電気スイッチ1つで絶縁体と超伝導体の繰り返し切り替えに成功” (2021.11.22)

[4] エキサイトニュース, “北大、電気スイッチ1つで絶縁体と超伝導体の繰り返し切り替えに成功” (2021.11.22)

[5] Mapionニュース, “北大、電気スイッチ1つで絶縁体と超伝導体の繰り返し切り替えに成功” (2021.11.22)

[6] dmenuニュース, “北大、電気スイッチ1つで絶縁体と超伝導体の繰り返し切り替えに成功” (2021.11.22)

[7] ニュースコレクト, “北大、電気スイッチ1つで絶縁体と超伝導体の繰り返し切り替えに成功” (2021.11.22)

[8] ニコニコニュース, “北大、電気スイッチ1つで絶縁体と超伝導体の繰り返し切り替えに成功” (2021.11.22)

[9] じもにゅー北海道, “北大、電気スイッチ1つで絶縁体と超伝導体の繰り返し切り替えに成功” (2021.11.22)

[10] 楽天Infoseek News, “北大、電気スイッチ1つで絶縁体と超伝導体の繰り返し切り替えに成功” (2021.11.22)

[11] 気になる車・バイクニュース, “北大、電気スイッチ1つで絶縁体と超伝導体の繰り返し切り替えに成功” (2021.11.22)

[12] NEWS PICKS, “北大、電気スイッチ1つで絶縁体と超伝導体の繰り返し切り替えに成功” (2021.11.22)

[13] しげろうたろうのブログ, “北大、電気スイッチ1つで絶縁体と超伝導体の繰り返し切り替えに成功” (2021.11.23)

[14] グノシー, “北大、電気スイッチ1つで絶縁体と超伝導体の繰り返し切り替えに成功” (2021.11.22)

[15] 科学新聞, “絶縁体と高温超伝導体 切り替え　北大電子研が成功” (2021.12.17)

[6] Qian Yang, Student Award, Qian Yang, Joonhyuk Lee, Hyoungjeen Jeen, Hai Jun Cho, and Hiromichi Ohta, “Solid-State Electrochemical Protonation Induced Phase Transition from SrCoO_2.5 into H_xSrCoO_2.5 (x = 1, 1.5 and 2)”, 薄膜材料デバイス研究会 第18回研究集会 in 京都, online, 2021.11.11-12 (口頭発表)

[5] Hai Jun Cho, Oral presentation award, H.J. Cho, Y. Wu, Y. Zhang, B. Feng, M. Mikami, W. Shin, Y. Ikuhara, Y-M. Sheu, K. Saito, H. Ohta, “Anomalously low heat conduction in single-crystal superlattice ceramics lower than randomly oriented polycrystals”, 1st Japan-France Virtual Workshop on Thermoelectrics (VWT2021), online, 2021.9.27-30.

[4] Gowoon Kim, Graduate School of Information Science and Technology, The Dean’s Award, September 24, 2021

[3] AM-FPD ’20 PAPER AWARD: AMFPD-ECS Japan Section Young Researcher Award, Yugo Takashima, Hokkaido Univ., Japan, “(4-3) Fabrication and Characterization of Ba1/3CoO2 Epitaxial Films Exhibiting Thermoelectric ZT = 0.12 at Room Temperature”, June 29, 2021

[2] 発表奨励賞 (2021.3.25), Binjie Chen, Gowoon Kim, Hai Jun Cho, and Hiromichi Ohta, “Modulation of the Metal-to-Insulator Transition Behavior of VO₂ Epitaxial Films by Insertion of TiO₂ Layers”, 第56回 応用物理学会北海道支部/第17回日本光学会北海道支部合同学術講演会, online, 2021.1.9-10

[1] Yu-Qiao Zhang, The 50th Matsumoto-Hatori Award, Research Institute for Electronic Science, Hokkaido University (2021.2.18)

[1] Hiromichi Ohta, Qian Yang, Hai Jun Cho, 特願2021-164181, October 5, 2021

[4] International Advisory Committee, Hiromichi Ohta, International Conference on Condensed Matter and Device Physics – 2021, 9-11 September, 2021 (online)

[3] 太田裕道, “研究室紹介　北海道大学電子科学研究所　薄膜機能材料研究分野”, 日本熱電学会誌, Vol. 17, No. 3 (2021). (2021.4.23)

[2] 高嶋佑伍, “熱電変換に夢を見て”, 北海道大学情報科学院 学生コラム「ISTラウンジ」, 2021.1.27

[1] Organizer, Online Workshop of Network Joint Research Center for Materials and Devices, January 27th, 2021 Online (closed)

January 27th, 2021 (Wed.)
Language: English
Software: Microsoft Teams
Attendee: Speakers, Member of Speakers’ Laboratory, Member of Ohta Laboratory

09:55 Opening

(Chair: Hai Jun Cho)
10:00 – 10:40 Prof. Ichiro Terasaki (Nagoya University)
Thermal diffusivity of the Mott insulator Ca₂RuO₄ in non-equilibrium steady states

10:40 – 11:20 Prof. Bin Feng (The University of Tokyo)
Structural and dynamical investigations of oxide grain boundaries using STEM

11:20 – 12:00 Prof. Hisaaki Tanaka and Prof. Taishi Takenobu (Nagoya University)
Charge transport and thermoelectric properties of ionic-liquid-gated conducting polymer films

Lunch

(Chair: Hiromichi Ohta)
13:00 – 13:40 Prof. Yoshiyuki Nonoguchi (NARA Institute of Science and Technology)
Thermoelectric materials development based on single-walled carbon nanotubes

13:40 – 14:20 Prof. Woo Seok Choi (Sungkyunkwan University)
Phase instability amid dimensional crossover in synthetic crystal

14:20 Photo and closing

[24] Dou-dou Liang*, Binjie Chen, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta*, “Optimization of Two-Dimensional Channel Thickness in Nanometer-Thick SnO₂-Based Top-Gated Thin-Film Transistors using Electric Field Thermopower Modulation: Implications for Flat-Panel Displays”, ACS Appl. Nano Mater. 3, 12427-12432 (2020). (December 15, 2020) (DOI: 10.1021/acsanm.0c03069)  International collaboration, JSPS-CORE Project, Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials, Network Joint Research Center for Materials and Devices

[23] Mian Wei*, Hai Jun Cho, and Hiromichi Ohta*, “Tuning of the optoelectronic properties for transparent oxide semiconductor ASnO₃ by modulating the size of A-ions”, ACS Appl. Electron. Mater. 2, 3971-3976 (2020). (December 8, 2020) (DOI: 10.1021/acsaelm.0c00806)

[22] Keisuke Nakamura, Tomoya Oshikiri, Kousei Ueno, Hiromichi Ohta, and Hiroaki Misawa*, “Hot-carrier Separation Induced by the Electric Field of a p-n Junction Between Titanium Dioxide and Nickel Oxide”,  Chem. Lett. (2020). (December 2, 2020) (DOI: 10.1246/cl.200790) Collaboration in RIES

[21] Tianshu Zhai, Rongbin Wang, Takayoshi Katase, Frances Quigley, Hiromichi Ohta, Patrick Amsalem, Norbert Koch, and Steffen Duhm*, “Substrate-independent energy-level pinning of an organic semiconductor provides versatile hole-injection electrodes”, ACS Appl. Electron. Mater. 2, 3994-4001 (2020). (December 8, 2020) (DOI: 10.1021/acsaelm.0c00823) International Collaboration

[20] Kaito Kanahashi, Yong-Young Noh, Won-Tae Park, Hoichang Yang, Hiromichi Ohta, Hisaaki Tanaka,* and Taishi Takenobu*, “Charge and thermoelectric transport mechanism in donor-acceptor copolymer films”, Phys. Rev. Res. 2, 043330 (2020). (December 7, 2020) (DOI: 10.1103/PhysRevResearch.2.043330) Network Joint Research Center for Materials and Devices

[19] Yugo Takashima, Yuqiao Zhang*, Jiake Wei, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta*, “Layered cobalt oxide epitaxial films exhibiting thermoelectric ZT = 0.11 at room temperature”, J. Mater. Chem. A 9, 274 – 280 (2021). (October 13, 2020) (DOI: 10.1039/D0TA07565E). Inside Back Cover, JSPS-CORE Project, Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials, Network Joint Research Center for Materials and Devices, Hokkaido University Japanese Press Release, Hokkaido University English Press Release

[18] Hiroaki Nakade, Eita Tochigi, Bin Feng, Yukio Nezu, Hiromichi Ohta, Naoya Shibata, and Yuichi Ikuhara, “Fabrication and characterization of tetragonal yttria-stabilized zirconia single-crystalline thin film”, J. Am. Ceram. Soc.104, 1198-1203 (2021). (October 18, 2020) (DOI: 10.1111/jace.17534) 新学術領域機能コア共同研究, Network Joint Research Center for Materials and Devices

[17] Dou-dou Liang*#, Binjie Chen#, Hai Jun Cho, and Hiromichi Ohta*, “Thickness Optimization toward High-Performance Bottom-Gated Transparent Tin Dioxide Thin-Film Transistor”, ACS Appl. Electron. Mater. 2, 3454-3458 (2020). (October 9, 2020) (DOI:10.1021/acsaelm.0c00711)

[16] Ichiro Terasaki, Isuzu Sano, Kosuke Toda, Shuji Kawasaki, Akitoshi Nakano, Hiroki Taniguchi, Hai Jun Cho, Hiromichi Ohta, and Fumihiko Nakamura, “Non-equilibrium steady states in the Mott insulator Ca₂RuO₄“, J. Phys. Soc. Jpn. 89, 093707 (2020). (August 27th, 2020) (DOI: 10.7566/JPSJ.89.093707) 新学術領域機能コア共同研究, Network Joint Research Center for Materials and Devices

[15] Fabian Krahl, Yuzhang Wu, Hai Jun Cho*, Maarit Karppinen, and Hiromichi Ohta*, “Spontaneous generation of carrier electrons at the interface between polycrystalline ZnO and amorphous InGaZnO₄”, Adv. Electron. Mater. 6, 2000404 (2020). (September 11, 2020) (DOI: 10.1002/aelm.202000404) International Collaboration, Network Joint Research Center for Materials and Devices, Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance)

[14] Gowoon Kim*, Bin Feng, Yu-Miin Sheu, Hai Jun Cho, Yuichi Ikuhara, Hiromichi Ohta*, “Coexistence of high electron conduction and low heat conduction in tungsten oxide epitaxial films with 1D atomic defect tunnels”, ACS Appl. Electron. Mater. 2, 2507-2513 (2020). (July 28, 2020) (DOI:10.1021/acsaelm.0c00428). International Collaboration, Network Joint Research Center for Materials and Devices, Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance)

[13] Qian Yang, Joonhyuk Lee, Bin Feng, Yuichi Ikuhara, Gowoon Kim, Hai Jun Cho, Hyoungjeen Jeen*, and Hiromichi Ohta*, “Unusually large thermopower change from +330 μV K^-1 to -185 μV K^-1 of brownmillerite SrCoO_2.5“, ACS Appl. Electron. Matter. 2, 2250-2256 (2020).  (July 6, 2020) (DOI: 10.1021/acsaelm.0c00427) International Collaboration, Network Joint Research Center for Materials and Devices, Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance)

[12] Kohei Fujiwara*, Miho Kitamura, Daisuke Shiga, Yasuhiro Niwa, Koji Horiba, Tsutomu Nojima, Hiromichi Ohta, Hiroshi Kumigashira, and Atsushi Tsukazaki, “Insulator-to-Metal Transition of Cr₂O₃ Thin Films via Isovalent Ru³⁺ Substitution”, Chem. Mater. 32, 5272 (2020). (May 27, 2020) (DOI: 10.1021/acs.chemmater.0c01497)

[11] Mian Wei^#, Lizhikun Gong^#, Dou-dou Liang^#, Hai Jun Cho*, and Hiromichi Ohta*, “Fabrication and Operating Mechanism of Deep-UV Transparent Semiconducting SrSnO₃-based Thin Film Transistor”, Adv. Electron. Mater. 6, 2000100 (2020). (June 15, 2020) (doi: 10.1002/aelm.202000100) (# Equally contributed to this work)

[10] M. Timpel, M. V. Nardi, B. Wegner, G. Ligorio, L. Pasquali, M. Pätzel, S. Hecht, H. Ohta, and N. Koch, “Oligothiophene-based Phosphonates for Interfacial Engineering of Ultraflat Transparent Conductive Oxides”,  Adv. Mater. Interfaces 7, 1902114 (2020). (May 4, 2020) (doi:10.1002/admi.201902114)  International collaboration

[9] Dou-dou Liang*, Yu-qiao Zhang, Hai Jun Cho and Hiromichi Ohta*, “Electric field thermopower modulation analyses of the operation mechanism of transparent amorphous SnO₂ thin-film transistor”, Appl. Phys. Lett. 116, 143503 (2020). (April 8, 2020) (DOI: 10.1063/5.0003153)  arXiv

[8] Hai Jun Cho,* Koichi Sato, Mian Wei, Gowoon Kim, and Hiromichi Ohta*, “Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba_1-xSr_xSnO₃ solid solution films”, J. Appl. Phys. 127, 115701 (2020). (March 17, 2020) (DOI:  10.1063/5.0002172) Editor’s pick

[7] Hisaaki Tanaka,* Kaito Kanahashi, Naoya Takekoshi, Hiroaki Mada, Hiroshi Ito,* Yukihiro Shimoi, Hiromichi Ohta, Taishi Takenobu*, “Thermoelectric properties of a semicrystalline polymer doped beyond the insulator-to-metal transition by electrolyte gating”, Science Adv. 6, eaay8065 (2020). (February 15th, 2020) (DOI: 10.1126/sciadv.aay8065)  Network Joint Research Center for Materials and Devices, Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance)

[6] Tomoya Oshikiri, Hiroki Sawayanagi, Keisuke Nakamura, Kosei Ueno, Takayoshi Katase, Hiromichi Ohta, and Hiroaki Misawa*, “Arbitrary control of the diffusion potential between a plasmonic metal and a semiconductor by an angstrom-thick interface dipole layer”, J. Chem. Phys. 152, 934705 (2020). (January 17th, 2020) (DOI: 10.1063/1.5134900) 所内共同研究

[5] Takaki Onozato*, Hai Jun Cho, and Hiromichi Ohta*, “An oxide-based flexible electrochromic transistor under mechanical stress”, Jpn. J. Appl. Phys. 59, 024002 (2020). (January 16th, 2020) (DOI: 10.7567/1347-4065/ab6563)

[4] Michihiko Yamanouchi*, Tatsuro Oyamada, and Hiromichi Ohta, “Current-induced effective magnetic field in La_0.67Sr_0.33MnO₃/LaAlO₃/SrTiO₃ structures”, AIP Adv. 10, 015129 (2020). (January 14th, 2020) (DOI: 10.1063/1.5129283)

[3] Mian Wei, Anup Sanchela, Bin Feng, Yuichi Ikuhara, Hai Jun Cho*, and Hiromichi Ohta*, “High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO₃ exceeding ~3000 S cm⁻¹”, Appl. Phys. Lett. 116, 022103 (2020). (January 13th, 2020) (DOI: 10.1063/1.5128410) Network Joint Research Center for Materials and Devices arXiv

[2] Seung Gyo Jeong, Taewon Min, Sungmin Woo, Jiwoong Kim, Yu-Qiao Zhang, Seong Won Cho, Jaeseok Son, Young-Min Kim, Jung Hoon Han, Sungkyun Park, Hu Young Jeong, Hiromichi Ohta, Suyoun Lee, Tae Won Noh, Jaekwang Lee* and Woo Seok Choi*, “Phase Instability amid Dimensional Crossover in Artificial Oxide Crystal”, Phys. Rev. Lett. 124, 026401 (2020). (January 13th, 2020)  (DOI: 10.1103/PhysRevLett.124.026401) International collaboration, Network Joint Research Center for Materials and Devices, Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance) Research Highlight

[1] Hai Jun Cho*, Yugo Takashima, Yukio Nezu, Takaki Onazato, and Hiromichi Ohta*, “Anisotropic Heat Conduction in Ion Substituted Layered Cobalt Oxides”, Adv. Mater. Interfaces  7, 1901816 (2019). (January 1st, 2020) (DOI: 10.1002/admi.201901816)

[1] Hai Jun Cho,* Koichi Sato, Mian Wei, Gowoon Kim, and Hiromichi Ohta*, “Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba_1-xSr_xSnO₃ solid solution films”, arXiv:2002.11308

[2] Dou-dou Liang*, Yu-qiao Zhang, Hai Jun Cho, and Hiromichi Ohta*, “Electric field thermopower modulation analyses of the operation mechanism of transparent amorphous SnO₂ thin-film transistor”, arXiv:2003.10096

[1] Hiromichi Ohta, “Electron transport properties of wide bandgap transparent oxide semiconductor, BaSnO₃-SrSnO₃“, The 12th International Workshop on Oxide Surfaces: IWOX-XII, Lake Placid, NY, USA, January 5-10, 2020 (Plenary)

[1] Takaki Onozato, Hai Jun Cho, and Hiromichi Ohta, “A WO₃-based electrochromic transistor on PET substrate”, The 12th International Workshop on Oxide Surfaces: IWOX-XII, Lake Placid, NY, USA, January 5-10, 2020 (Poster)

[2] Lizhikun Gong, Dou-dou Liang, Mian Wei, Hai Jun Cho, and Hiromichi Ohta, “深紫外透明酸化物半導体を活性層とする薄膜トランジスタの作製と熱電能電界変調”, The 55th Japan Society of Applied Physics Hokkaido Branch Meeting, Hokkaido University, January 11-12, 2020.

[3] Dou-dou Liang, Yu-qiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “熱電能電界変調法によるアモルファスSnO₂透明薄膜トランジスタ動作解析”, The 55th Japan Society of Applied Physics Hokkaido Branch Meeting, Hokkaido University, January 11-12, 2020. 第23回応用物理学会北海道支部発表奨励賞

[4] Yuzhang Wu, Hai Jun Cho, Bin Feng, Masashi Mikami, Woosuck Shin, Yuichi Ikuhara, Keiji Saito, and Hiromichi Ohta, “Clarification of anisotropic heat transport in a natural oxide superlattice InGaO₃(ZnO)_m“, The 55th Japan Society of Applied Physics Hokkaido Branch Meeting, Hokkaido University, January 11-12, 2020. Network Joint Research Center for Materials and Devices

[5] Kenyuu Sugo, Yu-qiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “Sr_1-xLa_xTiO₃全率固溶体エピタキシャル薄膜の熱電特性の解明”, The 55th Japan Society of Applied Physics Hokkaido Branch Meeting, Hokkaido University, January 11-12, 2020.

[6] Yugo Takashima, Takaki Onozato, Hai Jun Cho, and Hiromichi Ohta, “配向の異なる層状コバルト酸化物エピタキシャル薄膜の熱伝導率”, The 55th Japan Society of Applied Physics Hokkaido Branch Meeting, Hokkaido University, January 11-12, 2020.

[7] Gowoon Kim, Bin Feng, Hai Jun Cho, Yuichi Ikuhara, and Hiromichi Ohta, “高電気伝導率を示すMagneli WO_x薄膜の異常低熱伝導率”, The 55th Japan Society of Applied Physics Hokkaido Branch Meeting, Hokkaido University, January 11-12, 2020. Network Joint Research Center for Materials and Devices

[8] Qian Yang, Hai Jun Cho, Hyoungjeen Jeen, and Hiromichi Ohta, “熱電特性と導電性AFMによるSrCoO_xの電気化学反応の巨視的可視化”, The 55th Japan Society of Applied Physics Hokkaido Branch Meeting, Hokkaido University, January 11-12, 2020. The Korea-Japan bilateral program, International collaboration

[9] Qian Yang, Hai Jun Cho, Hyoungjeen Jeen, Hiromichi Ohta, “Macroscopic visualization of electrochemical oxidation reaction in information storage material SrCoO_x thin film”, 化学系学協会北海道支部2020年冬季研究発表会, Hokkaido University, January 28-29, 2020. The Korea-Japan bilateral program, International collaboration

[10] Yugo Takashima, Takaki Onozato, Hai Jun Cho, Hiromichi Ohta, “Crystal orientation dependence of thermoelectric properties of layered cobalt oxide A_xCoO₂ (A ＝ Li, Na, Ca, Sr) thin films”, 化学系学協会北海道支部2020年冬季研究発表会, Hokkaido University, January 28-29, 2020

[11] Lizhikun Gong, Dou-dou Liang, Mian Wei, Hai Jun Cho, Hiromichi Ohta, “Fabrication and thermopower modulation of deep-ultraviolet transparent SrSnO₃ thin film transistor”, 化学系学協会北海道支部2020年冬季研究発表会, Hokkaido University, January 28-29, 2020

[12] Gowoon Kim, Hai Jun Cho, Bin Feng, Yuichi Ikuhara, and Hiromichi Ohta, “Phonon-Glass Electron-Crystal behavior in Magneli tungsten oxide”, The 67th JSAP Spring Meeting 2020 (canceled, the presentation has been established), Sophia University, Tokyo, March 12-15, 2020. Network Joint Research Center for Materials and Devices

[13] Dou-dou Liang, Yu-qiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “Electric field thermopower modulation analyses of the operation mechanism of amorphous SnO₂ thin film transistor”, The 67th JSAP Spring Meeting 2020  (canceled, the presentation has been established), Sophia University, Tokyo, March 12-15, 2020

[14] Yugo Takashima, Takaki Onozato, Hai Jun Cho, and Hiromichi Ohta, “Improvement of Thermoelectric Figure of Merit for Layered Cobalt Oxides”, The 67th JSAP Spring Meeting 2020  (canceled, the presentation has been established), Sophia University, Tokyo, March 12-15, 2020

[15] 高嶋佑伍, Yuqiao Zhang, Jiake Wei, Bin Feng, 幾原雄一, Hai Jun Cho, 太田裕道, “層状酸化物Ba_1/3CoO₂エピタキシャル薄膜の作製と熱電特性”, 応用物理学会 KOSEN SC 第1回VR学術講演会, online, July 3, 2020. Network Joint Research Center for Materials and Devices

[16] Y. Zhang, H.J. Cho, K. Sugo, M. Mikami, S. Woo, M.-C. Jung, Y.-H. Zhuang, B. Feng, Y.-M. Sheu, W. Shin, W.S. Choi, M.J. Han, Y. Ikuhara, and H. Ohta, “Branching of Electrical and Thermal Conductivities in La- and Nb-substituted SrTiO₃“, Virtual Conference on Thermoelectrics (VCT 2020), online event, July 21-23, 2020. International collaboration, Network Joint Research Center for Materials and Devices

[17] Yugo Takashima, Yu-qiao Zhang, Jiake Wei, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “Fabrication and Characterization of Ba_1/3CoO₂ Epitaxial Films Exhibiting Thermoelectric ZT = 0.12 at Room Temperature”, THE 27th INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLAT PANEL DISPLAYS AND DEVICES (AM-FPD20), September 1-4, 2020. Network Joint Research Center for Materials and Devices

[18] Lizhikun Gong, Mian Wei, Dou-dou Liang, Hai Jun Cho, and Hiromichi Ohta, “Fabrication and Operating Mechanism of Deep-UV Transparent Semiconducting SrSnO₃-based Thin Film Transistor”, THE 27th INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLAT PANEL DISPLAYS AND DEVICES (AM-FPD20), September 1-4, 2020

[19] 太田裕道, 高嶋佑伍, 小野里尚記, ジョ ヘジュン, “イオン置換を施した層状コバルト酸化物A_xCoO₂の異方的熱伝導率”, 日本セラミックス協会 第33回秋季シンポジウム, online, September 2-4, 2020.

[20] Doudou Liang, Binjie Chen, Hai Jun Cho, Hiromichi Ohta, “Electric Field Thermopower Modulation Analyses of the Channel Thickness for SnO₂ Thin Film Transistors”, 2020年 第81回応用物理学会秋季学術講演会, online, September 8-11, 2020.

[21] Qian Yang, Bin Feng, Yuichi Ikuhara, Hyoungjeen Jeen, Hai Jun Cho, Hiromichi Ohta, “Solid-State Electrochemical Protonation/Oxidation of Oxygen Sponge SrCoO_2.5 Films”, 2020年 第81回応用物理学会秋季学術講演会, online, September 8-11, 2020. Network Joint Research Center for Materials and Devices

[22] 伊藤駿一郎, 中嶋大志, 金橋魁利, 田中久暁, 太田裕道, 竹延大志, “側鎖変調されたポリチオフェンドープ 膜の構造と伝導特性”, 2020年 第81回応用物理学会秋季学術講演会,  online, September 8-11, 2020. Network Joint Research Center for Materials and Devices

[23] 龔 李治坤, 魏 冕, 梁 豆豆, Hai Jun Cho, 太田裕道, “深紫外透明SrSnO₃薄膜トランジスタの作製と熱電能電界変調”, 日本金属学会 2020年秋期(第167回)講演大会, online, September 15-18, 2020.

[24]  高嶋佑伍, 張 雨橋, 魏 家科, 馮 斌, 幾原雄一, Hai Jun Cho, 太田裕道, “層状酸化物Ba_1/3CoO₂エピタキシャル薄膜の作製と熱電特性”, 日本金属学会 2020年秋期(第167回)講演大会, online, September 15-18, 2020. Network Joint Research Center for Materials and Devices

[25] Hiromichi Ohta, Hai Jun Cho, Yugo Takashima, Takaki Onozato, “Suppression of Anisotropic Heat Conduction in Ion-substituted Layered Cobalt Oxides”, Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME 2020), Honolulu, HI (or online), October 4-9, 2020.

[26] Gowoon Kim, Bin Feng, Yu-Miin Sheu, Hai Jun Cho, Yuichi Ikuhara, and Hiromichi Ohta, “High Electron and Low Heat Transports of 1D Atomic Defect Tunnels Stabilized in Tungsten Oxide Epitaxial Films”, Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME 2020), Honolulu, HI (or online), October 4-9, 2020. Network Joint Research Center for Materials and Devices, International collaboration

[27] Dou-dou Liang, Yu-qiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “Electric field thermopower modulation analyses of the operation mechanism of transparent amorphous SnO₂ thin-film transistor”, Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME 2020), Honolulu, HI (or online), October 4-9, 2020.

[28] Qian Yang，Hai Jun Cho，Hyoungjeen Jeen，Hiromichi Ohta, “Electrochemical Manipulation of the Electron Transports of SrCoO_x Epitaxial Films”, Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME 2020), October 4-9, 2020. International collaboration

[29] 藤本卓嗣, ジョへジュン, 太田裕道, “新しい透明酸化物半導体LaドープBaSnO₃薄膜 −微細構造，化学結合状態，電子輸送特性に及ぼす熱処理の影響−”, 第5回 北海道大学 部局横断シンポジウム－新世代の融合研究を目指して－, 北海道大学, October 19, 2020

[30] Gowoon Kim, Bin Feng, Yuichi Ikuhara, Yu-Miin Sheu, Hai Jun Cho, and Hiromichi Ohta, “Heat and Electron Transports of 1D Atomic Defect Tunnels Stabilized in WO_x Films”, 薄膜材料デバイス研究会 第17回研究会「薄膜デバイスの原点」, November 5-6, 2020. Network Joint Research Center for Materials and Devices, International collaboration

[31] Qian Yang, Joonhyuk Lee, Hyoungjeen Jeen, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “Electrochemical Protonation / Oxidation of SrCoO_2.5 Films using CAN as the Solid Electrolyte”, 薄膜材料デバイス研究会 第17回研究会「薄膜デバイスの原点」, November 5-6, 2020. Network Joint Research Center for Materials and Devices, International collaboration

[32] Y. Takashima, Y. Zhang, J. Wei, B. Feng, Y. Ikuhara, H.J. Cho, and H. Ohta, “Fabrication and Characterization of Ba_1/3CoO₂ Epitaxial Films Exhibiting ZT = 0.11 at Room Temperature”, 薄膜材料デバイス研究会 第17回研究会「薄膜デバイスの原点」, November 5-6, 2020. Network Joint Research Center for Materials and Devices, Student Award

[33] Shun-ichiro Ito, Kaito Kanahashi, Hisaaki Tanaka, Hiroshi Ito, Hiromichi Ohta, and Taishi Takenobu, “Structure and Charge Transport Analyses in Ionic-Liquid-Gated Conducting Polymer Thin Films with 2D-Ordered Crystallites”, 33rd International Microprocess and Nanotechnology Conference (MNC2020), online, November 9-12, 2020. Network Joint Research Center for Materials and Devices

[34] Gowoon Kim, Bin Feng, Yuichi Ikuhara, Yu-Miin Sheu, Hai Jun Cho, and Hiromichi Ohta, “Heat and electron transports of 1D atomic defect tunnels stabilized in tungsten oxide epitaxial films”, 令和2年度 日本セラミックス協会 東北北海道支部 研究発表会, online, November 13-14, 2020. Network Joint Research Center for Materials and Devices, International collaboration  Excellent Presentation Award

[35] Binjie Chen, Gowoon Kim, Hai Jun Cho, and Hiromichi Ohta, “Metal-to-insulator transition temperature reduction of VO₂ films by inserting TiO₂ layers”, 令和2年度 日本セラミックス協会 東北北海道支部 研究発表会, online, November 13-14, 2020.

[36] Takashi Fujimoto, Hai Jun Cho, and Hiromichi Ohta, “LaドープBaSnO₃薄膜の微細構造，化学結合状態，電子輸送特性に及ぼす熱処理の影響”, 令和2年度 日本セラミックス協会 東北北海道支部 研究発表会, online, November 13-14, 2020.

[37] Yuqiao Zhang, Yugo Takashima, Jiake Wei, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, Hiromichi Ohta, “Layered Cobalt Oxide Epitaxial Films Exhibiting Thermoelectric ZT = 0.11 at Room Temperature”, 第14回物性科学領域横断研究会, online, December 4-5, 2020. (oral) Network Joint Research Center for Materials and Devices

[38] Gowoon Kim，Bin Feng, Sangkyun Ryu, Hyoungjeen Jeen, Hai Jun Cho, Yuichi Ikuhara, Hiromichi Ohta, “Anisotropic electron transport of 1D atomic defect tunnels stabilized in epitaxial tungsten oxide films”, 第14回物性科学領域横断研究会, online, December 4-5, 2020. (oral) Network Joint Research Center for Materials and Devices, International collaboration

[39] 佐々野駿, 石川亮, 太田裕道, 柴田直哉, 幾原雄一, “(Li,La)TiO₃対称傾角粒界における原子・電子構造とリチウムイオン伝導物性”, 第14回物性科学領域横断研究会, online, December 4-5, 2020. (oral)  若手奨励賞

[40] Binjie Chen, Gowoon Kim, Hai Jun Cho, and Hiromichi Ohta, “Reduction of Metal-to-Insulator Transition Temperature of VO₂ Films by Inserting TiO₂ Layers”, The 21st RIES-Hokudai International Symposium 間 [ma], online, December 10-11, 2020 (poster).

[41] Gowoon Kim, Bin Feng, Sangkyun Ryu, Hai Jun Cho, Hyoungjeen Jeen, Yuichi Ikuhara, and Hiromichi Ohta, “Large Anisotropy of Electron Transport in Oxygen Deficient Tungsten Oxide Epitaxial Films with 1D Atomic Defect Tunnels”, The 21st RIES-Hokudai International Symposium 間 [ma], online, December 10-11, 2020 (poster). Poster Award

[42] Qian Yang, Joonhyuk Lee, Hyoungjeen Jeen, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “Electrochemical Redox Control of SrCoO_x Epitaxial Films using YSZ as the Solid Electrolyte”, The 21st RIES-Hokudai International Symposium 間 [ma], online, December 10-11, 2020 (poster). Poster Award

[43] Takashi Fujimoto, Hai Jun Cho, and Hiromichi Ohta, “Effect of heat treatment on the microstructure, electron transport properties and chemical bonding states of La-doped BaSnO₃ films”, The 21st RIES-Hokudai International Symposium 間 [ma], online, December 10-11, 2020 (poster).

[44] Yuqiao Zhang, Hai Jun Cho and Hiromichi Ohta, “Electron and heat transport properties of BaTiO₃ – BaNbO₃ solid solution epitaxial films”, The 21st RIES-Hokudai International Symposium 間 [ma], online, December 10-11, 2020 (poster).

[1] OPTRONICS ONLINE, “名大ら，導電性高分子における熱電変換機構を解明”, 2020年2月17日

[2] Yahoo!ニュース, “導電性高分子、半導体と金属の境で熱電変換性能が最大に フレキシブルなIoT電源に道” , 2020年2月18日

[3] 日本経済新聞（プレスリリース）, “名大と北大、電気を流すプラスチックで熱電変換性能の上限を決めるメカニズムの解明に成功”, 2020年2月17日

[4] fabcross for エンジニア, “導電性高分子の熱電変換性能を決定するメカニズムを解明――フレキシブルな電池の開発へ前進　名大ら”, 2020年2月18日

[5] マイナビニュース, “導電性高分子、半導体と金属の境で熱電変換性能が最大に フレキシブルなIoT電源に道” , 2020年2月18日

[6] ITmedia, “温度差で発電する“やわらかい電池”の実現へ前進、性能上限の仕組みを解明” (2020.2.19)

[7] TechEyesOnline, “温度差で発電する“やわらかい電池”の実現へ前進、性能上限の仕組みを解明” (2020.2.19)

[8] JPubb, “温度差で発電する柔らかい電池の開発へ前進～ＩｏＴ社会を支えるウェアラブルな電源～” (2020.2.19)

[9] 財経新聞, “温度差で発電するウェアラブルな電池　名大などが高性能化の条件を導出” (2020.2.21)

[10] BIGLOBEニュース, “温度差で発電するウェアラブルな電池　名大などが高性能化の条件を導出” (2020.2.21)

[11] 電波新聞, “名大と北大、産総研導電性高分子の熱電変換性能上限を決めるメカニズム解明” (2020.2.21)

[12] OPTRONICS ONLINE, “北大，DUVを透過する透明トランジスタを実現” (2020.6.16)

[13] fabcross for エンジニア, “深紫外線を透過する透明な薄膜トランジスタを作製――殺菌灯照射下でも動作可能な新バイオセンサーへの応用に期待　北海道大学” (2020.6.17)

[14] e.x.press, “深紫外線線を透過する透明なトランジスタを実現” (2020.6.24)

[15] Nanotechnology Platform Japan, “深紫外線を透過する透明なトランジスタを実現　～全く新しいバイオセンサー～” (2020.7.3)

[16] 日経産業新聞, “紫外線に強いトランジスタ” (2020.7.28)

[17] “次世代機能性薄膜の動向(1) ～電気・電子機能薄膜～ 4-8. 国立大学法人北海道大学”, Yano E plus 151, 42 (2020).

[18] fabcross for エンジニア, “過去最高の熱電変換性能指数を示す層状コバルト酸化物を実現――安定で実用的な熱電変換材料として期待　北海道大学” (2020.11.04)

[19] マイナビニュース, “北大、室温において過去最高クラスの熱電変換性能を持つ物質を実現” (2020.11.04)

[20] ニコニコニュース, “北大、室温において過去最高クラスの熱電変換性能を持つ物質を実現” (2020.11.04)

[21] グノシー, “北大、室温において過去最高クラスの熱電変換性能を持つ物質を実現” (2020.11.04)

[22] 日本の研究.comニュース, “【注目プレスリリース】金属酸化物における過去最高の室温熱電変換性能指数―安定で実用的な熱電変換材料の実現に大きな期待― / 北海道大学” (2020.11.04)

[23] Mapionニュース, “北大、室温において過去最高クラスの熱電変換性能を持つ物質を実現” (2020.11.04)

[24] 楽天Infoseek News, “北大、室温において過去最高クラスの熱電変換性能を持つ物質を実現” (2020.11.04)

[25] NEWS Collect, “北大、室温において過去最高クラスの熱電変換性能を持つ物質を実現” (2020.11.04)

[26] gooニュース, “北大、室温において過去最高クラスの熱電変換性能を持つ物質を実現” (2020.11.04)

[27] BOGLOBEニュース, “北大、室温において過去最高クラスの熱電変換性能を持つ物質を実現” (2020.11.04)

[28] Phys.org, “Researchers develop layered cobalt oxide with a record-setting thermoelectric figure of merit”, (2020.12.23)

[29] EurekAlert!, “Record-setting thermoelectric figure of merit achieved for metal oxides”, (2020.12.22)

[30] AZO Materials, “New Layered Cobalt Oxide Exhibits Highest-Ever Thermoelectric Figure of Merit”, (2020.12.23)

[31] FLORIDA NEWS TIMES, “Researchers are developing layered cobalt oxide with a record thermoelectric figure of merit” (2020.12.24)

[32] Newsbeezer.com, “The researchers are developing layered cobalt oxide with a record-breaking thermoelectric figure of merit” (2020.12.24)

[33] Asia Research News, “Record-setting thermoelectric figure of merit achieved for metal oxides” (2020.12.24)

[34] fooshya.com, “Researchers develop layered cobalt oxide with a record-setting thermoelectric determine of advantage” (2020.12.23)

[35] BrightSurf Science News, “Record-setting thermoelectric figure of merit achieved for metal oxides” (2020.12.22)

[36] Science Magazine, “Record-Setting Thermoelectric Figure Of Merit Achieved For Metal Oxides” (2020.12.23)

[37] The Human Exposome Project, “Record-setting thermoelectric figure of merit achieved for metal oxides” (2020.12.22)

[38] ZENITH NEWS, “Researchers develop layered cobalt oxide with a record-setting thermoelectric figure of merit” (2020.12.23)

[39] X-MOL, “Layered cobalt oxide epitaxial films exhibiting thermoelectric ZT = 0.11 at room temperature” (2020.10.13)

[40] TIMES NEWS EXPRESS, “Record-setting thermoelectric figure of merit achieved for metal oxides” (2020.12.22)

[41] iEmpresarial, “Record-setting thermoelectric figure of merit achieved for metal oxides” (2020.12.26)

[42] Nanotechnology Now, “Record-setting thermoelectric figure of merit achieved for metal oxides” (2020.12.29)

[43] Health Medicine Network, “Record-setting thermoelectric figure of merit achieved for metal oxides”

[44] Bioengineer.org, “Record-setting thermoelectric figure of merit achieved for metal oxides” (2020.12.23)

[45] Nanowerk, “Record-setting thermoelectric figure of merit achieved for metal oxides” (2020.12.23)

[46] Science Codex, “Record-setting thermoelectric figure of merit achieved for metal oxides” (2020.12.22)

[47] MIRAGE, “Record-setting thermoelectric figure of merit achieved for metal oxides” (2020.12.23)

[48] AlphaGalileo, “Record-setting thermoelectric figure of merit achieved for metal oxides” (2020.12.23)

[5] Gowoon Kim, Poster Award, (2020.12.11), Gowoon Kim, Bin Feng, Sangkyun Ryu, Hai Jun Cho, Hyoungjeen Jeen, Yuichi Ikuhara, and Hiromichi Ohta, “Large Anisotropy of Electron Transport in Oxygen Deficient Tungsten Oxide Epitaxial Films with 1D Atomic Defect Tunnels (P59)”, The 21st RIES-Hokudai International Symposium 間 [ma], online, December 10-11, 2020 (poster).

[4] Qian Yang, Poster Award, (2020.12.11), Qian Yang, Joonhyuk Lee, Hyoungjeen Jeen, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “Electrochemical Redox Control of SrCoO_x Epitaxial Films using YSZ as the Solid Electrolyte (P44)”, The 21st RIES-Hokudai International Symposium 間 [ma], online, December 10-11, 2020 (poster).

[3] Gowoon Kim, Excellent Presentation Award in 2020 Meeting of the Ceramics Society of Japan Tohoku-Hokkaido Branch, “Heat and electron transports of 1D atomic defect tunnels stabilized in tungsten oxide epitaxial films (1A03)”, Gowoon Kim, Bin Feng, Yuichi Ikuhara, Yu-Miin Sheu, Hai Jun Cho, and Hiromichi Ohta, online, November 13-14, 2020 (Oral).

[2] Yugo Takashima, Student Award from 薄膜材料デバイス研究会, (2020.11.6) Y. Takashima, Y. Zhang, J. Wei, B. Feng, Y. Ikuhara, H.J. Cho, and H. Ohta, “Fabrication and Characterization of Ba_1/3CoO₂ Epitaxial Films Exhibiting ZT = 0.11 at Room Temperature”, 薄膜材料デバイス研究会 第17回研究会「薄膜デバイスの原点」, November 5-6, 2020.

[1] Dou-dou Liang, 第23回応用物理学会北海道支部発表奨励賞, (2020.3.9)  Dou-dou Liang, Yu-qiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “熱電能電界変調法によるアモルファスSnO₂透明薄膜トランジスタ動作解析”, 第55回応用物理学会北海道支部/第16回日本光学会北海道支部合同学術講演会

[1] Hiromichi Ohta, Takaki Onozato, WO 2020/137328 A1, “Electrochromic Transistor, Electronic Curtain, Information Display/Storage Device, and Anti-Glare Mirror”, published July 2, 2020

[1] 北岡諭, 吉田英弘, 松永克志, 柴田直哉, 太田裕道, 阿部真之, “機能コア構造解析に基づく材料科学の新展開”, 日本セラミックス協会 第33回秋季シンポジウム オーガナイザー, 北海道大学札幌キャンパス, 2020年9月2日-4日

[14] Tingting Yao, Yixiao Jiang, Chunlin Chen*, Xuexi Yan, Ang Tao, Lixin Yang, Chuihong Li, Kenyu Sugo, Hiromichi Ohta, Hengqiang Ye, Yuichi Ikuhara, and Xiuliang Ma*, “Ferroelectric oxide thin film with an out-of-plane electrical conductivity”, Nano Lett. 20, 1047-1053 (2020). (December 26th 2019) (DOI: 10.1021/acs.nanolett.9b04210) International collaboration

[13] Kaito Kanahashi, Masatou Ishihara, Masataka Hasegawa, Hiromichi Ohta, and Taishi Takenobu*, “Giant power factors in p- and n-type large-area graphene films on a flexible plastic substrate”, npj 2D Mater. Appl. 3, 44 (2019). (November 8th, 2019) (DOI: 10.1038/s41699-019-0128-0). Network Joint Research Center for Materials and Devices

[12] Qian Yang, Hai Jun Cho, Hyoungjeen Jeen*, and Hiromichi Ohta*, “Macroscopic visualization of fast electrochemical reaction of SrCoO_x oxygen sponge”, Adv. Mater. Interfaces 6, 1901260 (2019). (DOI: 10.1002/admi.201901260) (October 23, 2019) The Korea-Japan bilateral program, International collaboration, Network Joint Research Center for Materials and Devices, Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance)  arXiv Detail Press release Outside Back Cover RIES-Hokkaido University Pusan National University Web

[11] Hai Jun Cho*, Bin Feng, Takaki Onozato, Mian Wei, Anup Sanchela, Yuichi Ikuhara, and Hiromichi Ohta*, “Investigation of electrical and thermal transport property reductions in La-doped BaSnO₃ films”, Phys. Rev. Mater. 3, 094601 (2019). (September 3rd, 2019) (DOI: 10.1103/PhysRevMaterials.3.094601) . Network Joint Research Center for Materials and Devices, Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance)  Editor’s Suggestion

[10] Yuqiao Zhang*, Kenyu Sugo, Hai Jun Cho, and Hiromichi Ohta*, “Thermoelectric Phase Diagram of the SrTiO₃ – LaTiO₃ Solid-Solution System through a Metal to Mott Insulator Transition”, J. Appl. Phys. 126, 075104 (2019). (August 15th, 2019) (DOI: 10.1063/1.5100993)

[9] Gowoon Kim, Hai Jun Cho*, Yu-Miin Sheu, and Hiromichi Ohta*, “Electrical, optical and thermal transport properties of oxygen deficient amorphous WO_x (2.5 < x < 3) films”, J. Phys. Chem. C 123, 15419 (2019). (DOI: 10.1021/acs.jpcc.9b02448)  International collaboration, Network Joint Research Center for Materials and Devices, Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance) Cover Image

[8] Kyeong Tae Kang, Chang Jae Roh, Jinyoung Lim, Taewon Min, Jun Han Lee, Kyoungjun Lee, Tae Yoon Lee, Seunghun Kang, Daehee Seol, Jiwoong Kim, Hiromichi Ohta, Amit Khare, Sungkyun Park, Yunseok Kim, Seung Chul Chae, Yoon Seok Oh, Jaekwang Lee, Jaejun Yu, Jong Seok Lee, and Woo Seok Choi*, “Room-temperature ferroelectric ferromagnet in 1D tetrahedral chain network”, Adv. Mater. 31, 1808104 (2019). (DOI: 10.1002/adma.201808104) (April 29, 2019) International collaboration, Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance) arXiv

[7] Anup Sanchela*, Mian Wei, Joonhyuk Lee, Gowoon Kim, Hyoungjeen Jeen, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, Hiromichi Ohta*, “Buffer layer-less fabrication of high-mobility transparent oxide semiconductor, La-doped BaSnO₃”, J. Mater. Chem. C 7, 5797-5802 (2019). (DOI: 10.1039/C8TC06177G) (April 8, 2019) The Korea-Japan bilateral program, International collaboration, Network Joint Research Center for Materials and Devices, Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance) arXiv

[6] Hai Jun Cho*, Gowoon Kim, Takaki Onozato, Hyoungjeen Jeen, and Hiromichi Ohta, “Thermal conductivity tensor of NbO₂“, International Journal of Heat and Mass Transfer 137, 263 (2019). (DOI: 10.1016/j.ijheatmasstransfer.2019.03.135) (March 27, 2019) The Korea-Japan bilateral program, International collaboration

[5] Michihiko Yamanouchi, Tatsuro Oyamada, and Hiromichi Ohta, “Peculiar magnetotransport properties in La_0.67Sr_0.33MnO₃/LaAlO₃/SrTiO₃“, AIP Adv. 9, 035129 (2019). (DOI: 10.1063/1.5079898) (15 March 2019)

[4] Takaki Onozato, Yukio Nezu, Hai Jun Cho, and Hiromichi Ohta*, “Fast operation of a WO₃-based solid-state electrochromic transistor”, AIP Adv. 9, 025122 (2019). (DOI: 10.1063/1.5089604) (26 February 2019)

[3] Michihiko Yamanouchi*, Tatsuro Oyamada, Koichi Sato, Hiromichi Ohta, and Jun’ichi Ieda, “Current-induced modulation of coercive field in the ferromagnetic oxide SrRuO₃“, IEEE Transactions on Magnetics 55, 1400604 (102). (DOI: 10.1109/TMAG.2019.2894897) (12 February 2019)

[2] Anup V. Sanchela*, Mian Wei, Hai Jun Cho, and Hiromichi Ohta*, “Thermopower modulation clarification of the operating mechanism in wide bandgap BaSnO₃−SrSnO₃ solid-solution based thin film transistors”, Small 15, 1805394 (2019).(DOI: 10.1002/smll.201805394) (30 January 2019)

[1] Kaito Kanahashi, Naoki Tanaka, Yoshiaki Shoji, Mina Maruyama, Il Jeon, Kenji Kawahara, Masatou Ishihara, Masataka Hasegawa, Hiromichi Ohta, Hiroki Ago, Yutaka Matsuo, Susumu Okada, Takanori Fukushima, and Taishi Takenobu*, “Formation of environmentally stable hole-doped graphene films: Instantaneous and high-density carrier doping by a boron-based oxidant”, npj 2D Materials and Applications 3, 7 (2019). Network Joint Research Center for Materials and Devices

[1] Mian Wei, Anup V. Sanchela, Bin Feng, Yuichi Ikuhara, Hai Jun Cho*, and Hiromichi Ohta*, “High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO₃ exceeding ~3000 S cm⁻¹“, arXiv: 1911.08818 Network Joint Research Center for Materials and Devices, CORE Project

[1] 太田裕道, 小野里尚記, 第2編 エレクトロクロミック材料の応用】 第11 章 酸化物エレクトロクロミック材料を用いたメモリデバイスの開発「エレクトロクロミックデバイスの開発最前線」樋口昌芳監修, シーエムシー出版 (in Japanese)

[2] Hiromichi Ohta, Chapter 5 “Electric Field Thermopower Modulation of 2D Electron Systems” in Thermoelectric Thin Films: Materials and Devices, Ed. Paolo Mele, Dario Narducci, Michihiro Ohta, Kaniskha Biswas, Juan Morante, Shrikant Saini, Tamio Endo, (Springer, 2019).

[3] Yu-qiao Zhang and Hiromichi Ohta, “2D thermoelectrics”, 2D Nanomaterials for Energy Applications (1st Edition) (Elsevier) (November 1st, 2019).

[1] Takayoshi Katase* and Hiromichi Ohta*, “Oxide-based optical, electrical and magnetic properties switching devices with water-incorporated gate insulator”, Jpn. J. Appl. Phys. 58, 090501 (2019).  (DOI: 10.7567/1347-4065/ab02a5)

[2] 太田裕道, 張 雨橋, “薄い電子層を絶縁体でサンドイッチ：熱電変換特性を高める方法”, 車載テクノロジー 6[5], 38 (2019) (in Japanese)

[3] Yuqiao Zhang and Hiromichi Ohta, “Electron sandwich doubles the thermoelectric power factor of SrTiO₃“, Phys. Status Solidi A, 1800832 (2019). (DOI: 10.1002/pssa.201800832) Back cover

[4] Takayoshi Katase and Hiromichi Ohta, “Surface charge accumulation and electrochemical protonation of transition metal oxides using water-infiltrated nanoporous glass”, Semiconductor Science and Technology 34, 123001 (2019). (10.1088/1361-6641/ab51b2) (November 15th, 2019)

[1] 太田裕道, “熱電材料の二次元薄膜化と特性向上”, 日本学術振興会161委員会 研究会, Hotel & Resort KYOTO-MIYAZU, 京都府宮津市, 2019年1月24日-25日 (Invited, in Japanese)

[2] 太田裕道, “熱電変換材料としての金属酸化物の可能性”, 第5回大型実験施設とスーパーコンピュータとの連携利用シンポジウム, 秋葉原UDX, 東京, 2019年3月15日(Invited, in Japanese)

[3] Hiromichi Ohta, Anup V. Sanchela, “Electron transport properties of transparent oxide semiconductor, BaSnO₃-SrSnO₃: Epitaxial films and thin film transistors”, EM-NANO 2019, Shinshu University, Nagano, June 19-22, 2019 (Invited)

[4]  Hiromichi Ohta, “Thermoelectric properties of two-dimensional electron system -superlattices and TFT channel-“, 2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2019), HANWHA RESORTS HAEUNDAE, Busan, Korea, July 1-3, 2019 (Invited)

[5] Hiromichi Ohta, Yuqiao Zhang, “Double enhancement of thermoelectric power factor in SrTiO₃ based electron sandwitch”, 4th Functional Oxide Thin Films for Advanced Energy and Information Technology Conference, Torres Vedras, Portugal, July 17-20, 2019 (Invited)

[6] 太田裕道, “透明酸化物半導体BaSnO₃ – SrSnO₃の電子輸送―エピタキシャル薄膜と薄膜トランジスタ―”, 日本金属学会 2019年秋期(第165回)講演大会, 岡山大学津島キャンパス（岡山県岡山市）2019年9月11日-13日 (Plenary, in Japanese)

[7] 山ノ内路彦, “TBA”, 強的秩序とその操作に関わる第9回研究会－若手夏の学校－, 定山渓ビューホテル（北海道札幌市）, 2019年9月16日-17日（講師）

[8] 小野里尚記, Hai Jun Cho，太田裕道, “WO₃固体エレクトロクロミックフレキシブルトランジスタの高速動作”, 2019年 第80回応用物理学会秋季学術講演会, 北海道大学 札幌キャンパス, 北海道札幌市, 2019年9月18日-21日（講演奨励賞受賞講演, in Japanese）

[9] 太田裕道, “酸化物を使った電界（電解）効果トランジスタの開発”, 日本セラミックス協会東北北海道支部 第27回北海道地区セミナー2019, 北海道大学工学部フロンティア応用科学研究棟, 北海道札幌市, 2019年11月25日

[10] Hiromichi Ohta, Hai Jun Cho, Yuzhang Wu, Bin Feng, Masashi Mikami, Woosuck Shin, Yuichi Ikuhara, and Keiji Saito, “Single Crystalline Film Growth of Layer Structured Oxides and Their Phonon Transports”, 2019 MRS Fall Meeting, Hynes Convention Center, Boston, MA, December 1-6, 2019 (Invited)  Highlighted in Meeting Blog

[1] Y. Wu, H. Cho, B. Feng, M. Mikami, W. Shin, Y. Ikuhara, and H. Ohta, “Natural superlattice structure based ultralow thermal conductivity in InGaO₃(ZnO)_m single crystalline films”, 第54回応用物理学会北海道支部/第15回日本光学会北海道支部合同学術講演会, サン・リフレ函館, 北海道函館市, 2019年1月5日-6日 Network Joint Research Center for Materials and Devices

[2] 須郷堅雄，張 雨橋，ジョ ヘジュン，太田裕道, “Sr_1−xLa_xTiO₃固溶体薄膜の熱電輸送特性”, 第54回応用物理学会北海道支部/第15回日本光学会北海道支部合同学術講演会, サン・リフレ函館, 北海道函館市, 2019年1月5日-6日

[3] M. Yamanouchi, T. Oyamada, K. Sato, H. Ohta, and J. Ieda, “Effects of current on domain wall motion in SrRuO₃“, 2019 Joint MMM-Intermag Conference, Washington DC, USA, January 14-18, 2019 (Poster).

[4] M. Yamanouchi, T. Oyamada, and H. Ohta, “Anomalous magnetotransport properties of La_0.67Sr_0.33MnO₃/LaAlO₃/SrTiO₃“, 2019 Joint MMM-Intermag Conference, Washington DC, USA, January 14-18, 2019 (Poster).

[5] Michihiko Yamanouchi, Tatsuro Oyamada, and Hiromichi Ohta, “Sign reversal of current-induced effective magnetic field in La_0.67Sr_0.33MnO₃ heterostructures”, 2019年 第66回 応用物理学会春季学術講演会, 東京工業大学 大岡山キャンパス(東京都目黒区), 2019年3月9日-12日

[6] A.V. Sanchela, M. Wei, H.J. Cho, and H. Ohta, “Thermopower modulation clarification of the operating mechanism in wide bandgap BaSnO₃−SrSnO₃ solid-solution based thin film transistors”, 2019年 第66回 応用物理学会春季学術講演会, 東京工業大学 大岡山キャンパス(東京都目黒区), 2019年3月9日-12日

[7] Y. Zhang, H.J. Cho, M. Mikami, S. Woo, M. Jung, W.S. Shin, W.S. Choi, M.J. Han, and H. Ohta, “Anomalous change of heat transfer in Sr(Ti,Nb)O₃ solid solution”, 2019年 第66回 応用物理学会春季学術講演会, 東京工業大学 大岡山キャンパス(東京都目黒区), 2019年3月9日-12日 Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance)

[8] 小野里尚記, 根津有希央, Hai Jun Cho，太田裕道, “WO₃固体エレクトロクロミックトランジスタの高速動作”, 2019年 第66回 応用物理学会春季学術講演会, 東京工業大学 大岡山キャンパス(東京都目黒区), 2019年3月9日-12日

[9] 金橋魁利, 竹腰直哉, 中嶋大志, Yong-Young Noh, 太田裕道, 田中久暁, 竹延大志, “導電性高分子のフェルミレベル制御と熱電変換特性”, 日本物理学会 第74回年次大会, 九州大学伊都キャンパス, 福岡県福岡市, 2019年3月14日-17日 Network Joint Research Center for Materials and Devices

[10] 中出博暁, 栃木栄太, 馮斌, 柴田直哉, 幾原雄一, 近藤隼, 根津有希央, 太田裕道, “イットリア安定化ジルコニア正方晶薄膜における正方晶-単斜晶相変態のTEM内その場観察”, 日本金属学会 2019年春期（第164回）講演大会, 東京電機大学東京千住キャンパス（東京都足立区）, 2019年3月20日-22日 Network Joint Research Center for Materials and Devices

[11] 佐々野駿, 石川亮, 太田裕道, 柴田直哉, 幾原雄一, “(La, Li)TiO₃対応傾角粒界における原子構造とリチウムイオン伝導度の関係”, 日本セラミックス協会 2019年年会, 工学院大学新宿キャンパス, 2019年3月24日-26日

[12] Rongbin Wang, Takayoshi Katase, Ke-Ke Fu, Tianshu Zhai, Jiacheng Yang, Qiankun Wang, Hiromichi Ohta, Steffen Duhm, and Norbert Koch, “Stoichiometric and Oxygen-Deficient VO₂ as Versatile Electrode for Organic Semiconductors”, The 14th International symposium on Functional pi-electron systems, Berlin, Germany, June 2-7, 2019 (Poster) International Collaboration

[13] Shun Sasano, Ryo Ishikawa, Hiromichi Ohta, Naoya Shibata, and Yuichi Ikuhara, “Atomistic Structures and Li-ion Conductivities at High-angle Tilt Grain Boundaries in (Li, La)TiO₃“, The 6th International Symposium on Advanced Microscopy and Theoretical Calculations (AMTC6), Winc Aichi, Nagoya, Japan, June 14th-15th, 2019.

[14] Shun Sasano, Ryo Ishikawa, Hiromichi Ohta, Naoya Shibata, Yuichi Ikuhara, “Atomic structure, chemistry and Li-ion conductivity at tilt grain boundaries of (La, Li)TiO₃“, 22nd International Conference on Solid State Ionics (SSI-22), PyeongChang, Korea, June 16th-21st, 2019

[15] Shun Sasano, Ryo Ishikawa, Hiromichi Ohta, Naoya Shibata, and Yuichi Ikuhara, “Atomic structure and Li-ion conductivity at (La, Li)TiO₃ high-angle tilt grain boundaries”, Intergranular and Interphase Boundaries in Materials (IIB 2019), Paris, July 1-5, 2019

[16] 渡辺且弥, 金橋魁利, 太田裕道, 田中久暁, 伊東裕, 竹延大志, “一軸配向した導電性高分子PBTTTにおける熱電特性”, 日本物理学会 2019年秋季大会（物性）, 岐阜大学（岐阜県岐阜市）, 2019年9月10日-13日. 物質デバイス領域共同研究拠点

[17] 渡辺且弥，金橋魁利，田中 久暁，伊東 裕，太田裕道，竹延大志, “一軸配向した導電性高分子PBTTT膜における熱電特性”, The 80th JSAP Autumn Meeting 2019, Sapporo, Japan, September 18-21, 2019. Network Joint Research Center for Materials and Devices

[18] Qian Yang，Hai Jun Cho，Hyoungjeen Jeen，and Hiromichi Ohta, “Electrochemical oxidation and electron transports of SrCoO_2.5 epitaxial films”, The 80th JSAP Autumn Meeting 2019, Sapporo, Japan, September 18-21, 2019.  The Korea-Japan bilateral program, International collaboration

[19] Qian Yang，Hai Jun Cho，Joonhyuk Lee, Bin Feng, Yuichi Ikuhara, Hyoungjeen Jeen, and Hiromichi Ohta, “Thermopower of brownmillerite SrCoO_2.5 epitaxial films grown on various substrates”, The 80th JSAP Autumn Meeting 2019, Sapporo, Japan, September 18-21, 2019. The Korea-Japan bilateral program, International collaboration, Network Joint Research Center for Materials and Devices

[20] Hai Jun Cho, Bin Feng, Takaki Onozato, Mian Wei, Anup V. Sanchela, Yuichi Ikuhara, Hiromichi Ohta, “Investigation of transport property reductions in epitaxial La-doped BaSnO₃ films”, The 80th JSAP Autumn Meeting 2019, Sapporo, Japan, September 18-21, 2019. Network Joint Research Center for Materials and Devices

[21] Mian Wei，Anup Sanchela，Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO₃ exceeding ~3000 S cm⁻¹“, The 80th JSAP Autumn Meeting 2019, Sapporo, Japan, September 18-21, 2019. Network Joint Research Center for Materials and Devices

[22] Gowoon Kim，Hai Jun Cho，Yu-Miin Sheu，and Hiromichi Ohta, “Optical, electrical, and thermal transports of amorphous WO_x (2.5 < x < 3) films”, The 80th JSAP Autumn Meeting 2019, Sapporo, Japan, September 18-21, 2019. International Collaboration

[23] Gowoon Kim，Hai Jun Cho，Bin Feng，Yuichi Ikuhara，and Hiromichi Ohta, “Electron and heat transports of oxygen deficient WO_x (2.83 < x < 3) epitaxial films”, The 80th JSAP Autumn Meeting 2019, Sapporo, Japan, September 18-21, 2019. Network Joint Research Center for Materials and Devices

[24] Yuqiao Zhang, Hai Jun Cho, Kenyu Sugo, Masashi Mikami, Sungmin Woo, Myung-Chul Jung, Woosuck Shin, Woo Seok Choi, Myung Joon Han, and Hiromichi Ohta, “High and low thermal conductivity phase boundary in SrTiO₃ – SrNbO₃ solid-solution system”, The 80th JSAP Autumn Meeting 2019, Sapporo, Japan, September 18-21, 2019.  International Collaboration,  Network Joint Research Center for Materials and Devices

[25] 須郷堅雄，張　雨橋，ジョヘジュン，太田裕道, “Sr_1−xLa_xTiO₃全率固溶体エピタキシャル薄膜の熱電特性”, The 80th JSAP Autumn Meeting 2019, Sapporo, Japan, September 18-21, 2019.

[26] 高嶋佑伍，小野里尚記, ジョヘジュン，太田裕道, “層状酸化物エピタキシャル薄膜の熱伝導率異方性”, The 80th JSAP Autumn Meeting 2019, Sapporo, Japan, September 18-21, 2019.

[27] Y. Wu, H.J. Cho, B. Feng, M. Mikami, W. Shin, Y. Ikuhara, K. Saito, and H. Ohta, “Anisotropic Heat Transport of Natural Superlattice Oxide, InGaO₃(ZnO)_m“, The 80th JSAP Autumn Meeting 2019, Sapporo, Japan, September 18-21, 2019.

[28] Hai Jun Cho, Bin Feng, Takaki Onozato, Mian Wei, Anup V. Sanchela, Yuichi Ikuhara, Hiromichi Ohta, “Electron and heat transport properties of La-doped BaSnO₃ epitaxial films”, 26th International Workshop on Oxide Electronics (iWOE26), Kyoto, Japan, Sep. 29 – Oct. 2, 2019. (Oral) Network Joint Research Center for Materials and Devices

[29] Qian Yang, Hai Jun Cho, Hyoungjeen Jeen, Hiromichi Ohta, “Anomalous Thermopower Behaviour of Brownmillerite SrCoO_2.5 Epitaxial Films”, 26th International Workshop on Oxide Electronics (iWOE26), Kyoto, Japan, Sep. 29 – Oct. 2, 2019. (Poster) The Korea-Japan bilateral program, International collaboration

[30] Gowoon Kim, Hai Jun Cho, Bin Feng, Yuichi Ikuhara, Hiromichi Ohta, “Systematic Clarification of Electron and Heat Transports in Oxygen Deficient WO_x – Comparison between Amorphous Films and Epitaxial Films –”, TOEO-11, Nara, Japan, October 7-9, 2019. (Poster)  Network Joint Research Center for Materials and Devices

[31] Mian Wei, Anup V. Sanchela, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “New Deep-Ultraviolet Transparent Oxide Semiconductor, La-doped SrSnO₃“, TOEO-11, Nara, Japan, October 7-9, 2019. (Poster)  Network Joint Research Center for Materials and Devices Best Poster Award (Gold)

[32] Hiromichi Ohta and Anup V. Sanchela, “Transparent Oxide Semiconductor BaSnO₃-SrSnO₃Solid-Solutions”, TOEO-11, Nara, Japan, October 7-9, 2019. (Oral)

[33] Michihiko Yamanouchi*, Tatsuro Oyamada, and Hiromichi Ohta, “Current-induced effective magnetic field in La_0.67Sr_0.33MnO₃/LaAlO₃/SrTiO₃“, Annual Conference on Magnetism and Magnetic Materials (MMM), Las Vegas, NV, November 4-8, 2019

[34] 高嶋佑伍, 小野里尚記, ジョヘジュン, 太田 裕道, “温度差を電気に変換する熱電材料としての層状コバルト酸化物”, 第5回北海道大学部局横断シンポジウム, 北海道大学医学部学友会館フラテホール（北海道札幌市）, 2019年11月6日

[35] 楊 倩, Hai Jun Cho, Hyoungjeen Jeen, 太田裕道, “SrCoO_x酸素スポンジの高速電気化学反応の巨視的可視化”, 令和元年日本セラミックス協会　東北北海道支部研究発表会, 新潟大学工学部, 新潟県新潟市, 2019年11月8日-9日（口頭発表） The Korea-Japan bilateral program, International collaboration

[36] 楊 倩, ジョ ヘジュン, Joonhyuk Lee, 馮 斌, 幾原雄一, Hyoungjeen Jeen, 太田裕道, “ブラウンミラライト型SrCoO_2.5薄膜の異常熱電能”, 令和元年日本セラミックス協会　東北北海道支部研究発表会, 新潟大学工学部, 新潟県新潟市, 2019年11月8日-9日（ポスター発表）  Network Joint Research Center for Materials and Devices,  The Korea-Japan bilateral program, International collaboration  Excellent Presentation Award

[37] 太田裕道, Anup V. Sanchela, “透明酸化物半導体BaSnO₃−SrSnO₃固溶体”, 令和元年日本セラミックス協会　東北北海道支部研究発表会, 新潟大学工学部, 新潟県新潟市, 2019年11月8日-9日（口頭発表）

[38] 須郷堅雄, 張　雨橋, ジョ・ヘジュン, 太田裕道, “バンド絶縁体SrTiO₃−モット絶縁体LaTiO₃全率固溶体エピタキシャル薄膜の熱電特性”, 薄膜材料デバイス研究会 第16回研究集会 in 京都「新時代に向けた薄膜材料のデバイス技術」, 龍谷大学 響都ホール, 京都府京都市, 2019年11月8日-9日(Oral) Student Award

[39] Dou-dou Liang, Yu-qiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “Electric field thermopower modulation of amorphous SnO₂ transparent thin film transistor”, 薄膜材料デバイス研究会 第16回研究集会 in 京都「新時代に向けた薄膜材料のデバイス技術」, 龍谷大学 響都ホール, 京都府京都市, 2019年11月8日-9日(Oral) Student Award

[40] Takaki Onozato, Hai Jun Cho, and Hiromichi Ohta, “Flexible electrochromic transistor”, The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), Okinawa, Japan, November 10-15, 2019. (Poster)

[41] 佐々野駿，石川亮，太田裕道，柴田直哉，幾原雄一, “(Li, La)TiO₃対応粒界における原子構造とイオン伝導特性”, 第60回 電池討論会, 国立京都国際会館, 京都府京都市, 2019年11月13日-15日

[42] Yuqiao Zhang, Hai Jun Cho, Kenyu Sugo, Masashi Mikami, Sungmin Woo, Myung-Chul Jung, Woosuck Shin, Woo Seok Choi, Myung Joon Han, and Hiromichi Ohta, “High and Low Thermal Conductivity Phase Boundary in SrTiO₃ – SrNbO₃ Solid-Solution System”, 2019 MRS Fall Meeting & Exhibit, Boston, MA, December 1-6, 2019. (Poster)  Network Joint Research Center for Materials and Devices, International collaboration

[43] Gowoon Kim, Hai Jun Cho, Yu-Miin Sheu, Hiromichi Ohta, “Electrical, optical and thermal transport properties of oxygen deficient amorphous WO_x (2.5 < x < 3) films”, 2019 MRS Fall Meeting & Exhibit, Boston, MA, December 1-6, 2019. (Poster)  International collaboration  Best Poster Award Nomination

[44] Dou-dou Liang, Yu-qiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “Electric field thermopower modulation analyses of high mobility transparent amorphous SnO₂ thin film transistor”, The 20th RIES-HOKUDAI International Symposium, Hokkaido University, Sapporo, Japan, December 2-3, 2019. (Poster)

[45] Kenyu Sugo, Yuqiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “Systematic investigation of thermoelectric properties in Sr_1−xLa_xTiO₃ solid-solutions”, The 20th RIES-HOKUDAI International Symposium, Hokkaido University, Sapporo, Japan, December 2-3, 2019. (Poster)

[46] Gong Lizhikun, Dou-dou Liang, Mian Wei, Hai Jun Cho, and Hiromichi Ohta, “Fabrication and thermopower modulation of thin film transistor using deep-ultraviolet transparent oxide semiconductor as active layer”, The 20th RIES-HOKUDAI International Symposium, Hokkaido University, Sapporo, Japan, December 2-3, 2019. (Poster)

[47] Mian Wei, Anup V. Sanchela, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “Epitaxial film growth of a deep-ultraviolet transparent oxide semiconductor, La-doped SrSnO₃“, The 20th RIES-HOKUDAI International Symposium, Hokkaido University, Sapporo, Japan, December 2-3, 2019. (Poster)  Network Joint Research Center for Materials and Devices

[48] Qian Yang，Hai Jun Cho，Hyoungjeen Jeen，and Hiromichi Ohta, “Macroscopic visualization of fast electrochemical reaction of SrCoO_x oxygen sponge”, The 20th RIES-HOKUDAI International Symposium, Hokkaido University, Sapporo, Japan, December 2-3, 2019. (Poster) The Korea-Japan bilateral program, International collaboration

[49] Takashi Fujimoto, Hai Jun Cho, and Hiromichi Ohta, “Effect of heat treating on electronic and structural properties of lightly doped epitaxial La_xBa_1−xSnO₃ films”, The 20th RIES-HOKUDAI International Symposium, Hokkaido University, Sapporo, Japan, December 2-3, 2019. (Poster)

[50] Yugo Takashima, Takaki Onozato, Hai Jun Cho, and Hiromichi Ohta, “Thermal conductivity of layered cobalt oxide epitaxial films with different crystallographic orientation”, The 20th RIES-HOKUDAI International Symposium, Hokkaido University, Sapporo, Japan, December 2-3, 2019. (Poster) Poster Award

[51] Yuzhang Wu, Hai Jun Cho, Bin Feng, Masashi Mikami, Woosuck Shin, Yuichi Ikuhara, Keiji Saito, and Hiromichi Ohta, “Thermal conductivity of InGaO₃(ZnO)_m (m = integer) natural superlattice”, The 20th RIES-HOKUDAI International Symposium, Hokkaido University, Sapporo, Japan, December 2-3, 2019. (Poster)  Network Joint Research Center for Materials and Devices

[52] Dou-dou Liang, Yu-qiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “Electric field thermopower modulation analyses of high mobility transparent amorphous SnO₂ thin film transistor”, 2019 International Symposium of Research Institute for Electronic Science (RIES), Hokkaido University & Center for Emergent Functional Matter Science (CEFMS), National Chiao Tung University, Hokkaido University, Sapporo, Japan, December 3-4, 2019. (Poster)

[53] Kenyu Sugo, Yuqiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “Systematic investigation of thermoelectric properties in Sr_1−xLa_xTiO₃ solid-solutions”, 2019 International Symposium of Research Institute for Electronic Science (RIES), Hokkaido University & Center for Emergent Functional Matter Science (CEFMS), National Chiao Tung University, Hokkaido University, Sapporo, Japan, December 3-4, 2019. (Poster)

[54] Gong Lizhikun, Dou-dou Liang, Mian Wei, Hai Jun Cho, and Hiromichi Ohta, “Fabrication and thermopower modulation of thin film transistor using deep-ultraviolet transparent oxide semiconductor as active layer”, 2019 International Symposium of Research Institute for Electronic Science (RIES), Hokkaido University & Center for Emergent Functional Matter Science (CEFMS), National Chiao Tung University, Hokkaido University, Sapporo, Japan, December 3-4, 2019. (Poster)

[55] Mian Wei, Anup V. Sanchela, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “Epitaxial film growth of a deep-ultraviolet transparent oxide semiconductor, La-doped SrSnO₃“, 2019 International Symposium of Research Institute for Electronic Science (RIES), Hokkaido University & Center for Emergent Functional Matter Science (CEFMS), National Chiao Tung University, Hokkaido University, Sapporo, Japan, December 3-4, 2019. (Poster)  Network Joint Research Center for Materials and Devices

[56] Qian Yang，Hai Jun Cho，Hyoungjeen Jeen，and Hiromichi Ohta, “Macroscopic visualization of fast electrochemical reaction of SrCoO_x oxygen sponge”, 2019 International Symposium of Research Institute for Electronic Science (RIES), Hokkaido University & Center for Emergent Functional Matter Science (CEFMS), National Chiao Tung University, Hokkaido University, Sapporo, Japan, December 3-4, 2019. (Poster) The Korea-Japan bilateral program, International collaboration

[57] Takashi Fujimoto, Hai Jun Cho, and Hiromichi Ohta, “Effect of heat treating on electronic and structural properties of lightly doped epitaxial La_xBa_1−xSnO₃ films”, 2019 International Symposium of Research Institute for Electronic Science (RIES), Hokkaido University & Center for Emergent Functional Matter Science (CEFMS), National Chiao Tung University, Hokkaido University, Sapporo, Japan, December 3-4, 2019. (Poster)

[58] Yugo Takashima, Takaki Onozato, Hai Jun Cho, and Hiromichi Ohta, “Thermal conductivity of layered cobalt oxide epitaxial films with different crystallographic orientation”, 2019 International Symposium of Research Institute for Electronic Science (RIES), Hokkaido University & Center for Emergent Functional Matter Science (CEFMS), National Chiao Tung University, Hokkaido University, Sapporo, Japan, December 3-4, 2019. (Poster)

[59] Yuzhang Wu, Hai Jun Cho, Bin Feng, Masashi Mikami, Woosuck Shin, Yuichi Ikuhara, Keiji Saito, and Hiromichi Ohta, “Thermal conductivity of InGaO₃(ZnO)_m (m = integer) natural superlattice”, 2019 International Symposium of Research Institute for Electronic Science (RIES), Hokkaido University & Center for Emergent Functional Matter Science (CEFMS), National Chiao Tung University, Hokkaido University, Sapporo, Japan, December 3-4, 2019. (Poster)  Network Joint Research Center for Materials and Devices

[60] Takaki Onozato, Hai Jun Cho, Hiromichi Ohta, “Fabrication of electrochromic transistor on flexible substrate”, Materials Research Meeting 2019, Yokohama, Japan, December 10-14, 2019. (Oral)

[61] Mian Wei, Anup V. Sanchela, Hai Jun Cho, and Hiromichi Ohta, “High electrical conductivity exceeding ~3000 S cm⁻¹ of a transparent oxide semiconductor, La-doped SrSnO₃“, Materials Research Meeting 2019, Yokohama, Japan, December 10-14, 2019. (Oral)

[62] Katsuya Watanabe, Kaito Kanahashi, Naoya Takekoshi, Hisaaki Tanaka, Hiroshi Ito, Hiromichi Ohta, Taishi Takenobu, “Gate-tuned Thermoelectric Performances in Aligned Conducting Polymers”, Materials Research Meeting 2019, Yokohama, Japan, December 10-14, 2019. (Poster) Network Joint Research Center for Materials and Devices

[63] H.J. Cho, G. Kim, T. Onozato, H. Jeen, and H. Ohta, “Characterization of thermal conductivity tensors using time-domain thermoreflectance”, The 3rd Workshop on Functional Materials Science, Sapporo, Japan, December 18th-20th, 2019. (Poster) The Korea-Japan bilateral program, International collaboration

[64] Doudou Liang, Hai Jun Cho, and Hiromichi Ohta, “Electric field thermopower modulation of high-mobility SnO₂ transparent thin film transistor”, The 3rd Workshop on Functional Materials Science, Sapporo, Japan, December 18th-20th, 2019. (Poster)

[65] Gong Lizhikun, Dou-dou Liang, Mian Wei, Hai Jun Cho, and Hiromichi Ohta, “Fabrication and characterization of deep-ultraviolet transparent oxide semiconductor thin film transistors”, The 3rd Workshop on Functional Materials Science, Sapporo, Japan, December 18th-20th, 2019. (Poster)

[66] G. Kim, H. J. Cho, B. Feng, Y. Ikuhara, and H. Ohta, “Systematic Clarification of Electron and Heat Transports in Oxygen Deficient WO_x“, The 3rd Workshop on Functional Materials Science, Sapporo, Japan, December 18th-20th, 2019. (Poster)  Network Joint Research Center for Materials and Devices

[67] Hai Jun Cho, Bin Feng, Takaki Onozato, Mian Wei, Anup V. Sanchela, Yuichi Ikuhara, and Hiromichi Ohta, “Investigation of transport property reductions in epitaxial La-doped BaSnO₃ films”, The 3rd Workshop on Functional Materials Science, Sapporo, Japan, December 18th-20th, 2019. (Oral) Network Joint Research Center for Materials and Devices

[68] Kenyu Sugo, Yuqiao Zhang, Hai Jun Cho, and Hiromichi Ohta, “Systematic investigation of thermoelectric properties in Sr_1−xLa_xTiO₃ solid-solution system”, The 3rd Workshop on Functional Materials Science, Sapporo, Japan, December 18th-20th, 2019. (Poster)

[69] Qian Yang, Joonhyuk Lee, Bin Feng, Yuichi Ikuhara, Gowoon Kim, Hai Jun Cho, Hyoungjeen Jeen, and Hiromichi Ohta, “Thermopower detection of electronic structure modulation of SrCoO_2.5 film on lattice mismatched substrates”, The 3rd Workshop on Functional Materials Science, Sapporo, Japan, December 18th-20th, 2019.  (Poster) The Korea-Japan bilateral program, International collaboration

[70] Takaki Onozato, Hai Jun Cho, and Hiromichi Ohta, “A flexible electrochromic transistor under mechanical fatigue”, The 3rd Workshop on Functional Materials Science, Sapporo, Japan, December 18th-20th, 2019. (Poster)

[71] Y. Takashima, T. Onazato, Y. Nezu, H.J. Cho, and H. Ohta, “Anisotropy of Thermal Conductivity for Epitaxial Films of Layered Cobalt Oxides, A_xCoO₂ (A = Li, Na, Ca, and Sr)”, The 3rd Workshop on Functional Materials Science, Sapporo, Japan, December 18th-20th, 2019. (Poster)

[72] Y. Zhang, H.J. Cho, K. Sugo, M. Mikami, S. Woo, M.-C. Jung, Y.H. Zhuang, Y-M. Sheu, W. Shin, W.S. Choi, M.J. Han, and H. Ohta, “Zero contribution of conduction electrons in the thermal conductivity of a metallic conductor”, The 3rd Workshop on Functional Materials Science, Sapporo, Japan, December 18th-20th, 2019.  (Poster) Network Joint Research Center for Materials and Devices, International collaboration

[73] Y. Wu, H.J. Cho, B. Feng, M. Mikami, W. Shin, Y. Ikuhara, K. Saito, and H. Ohta, “Phonon propagation competition across natural superlattice InGaO₃(ZnO)_m“, The 3rd Workshop on Functional Materials Science, Sapporo, Japan, December 18th-20th, 2019.  (Poster) Network Joint Research Center for Materials and Devices

[74] Mian Wei, Anup V. Sanchela, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta, “New Deep-Ultraviolet Transparent Oxide Semiconductor, La-doped SrSnO₃“, The 3rd Workshop on Functional Materials Science, Sapporo, Japan, December 18th-20th, 2019.  (Poster) 物質デバイス領域共同研究拠点

[1] Yano E plus 2019.7 次世代先端デバイス動向(3) 超格子デバイス 6.7 国立大学法人北海道大学 で当研究室が紹介された。

[2] OPTRONICS ONLINE, “北大ら, 電気化学酸化反応を可視化”, 2019年11月11日

[3] fabcross for エンジニア, “熱電特性と導電性原子間力顕微鏡観察を組み合わせた新可視化手法を開発――次世代情報記憶素子の開発を加速　北海道大学ら”, 2019年11月11日

[4] EE Times Japan, “北海道大学と釜山大学校：情報記憶素子用材料の電気化学酸化反応を可視化 – 熱電特性の計測と導電性原子間力顕微鏡観察を組み合わせ -“, 2019年11月12日

[5] ジェグテックヘッドライン, “北海道大学などが、情報記憶素子材料の反応を可視化することに成功”, 2019年11月18日

[1] Hai Jun Cho, 48th Matsumoto-Hatori Award of Research Institute for Electronic Science, Hokkaido University

[2] Yu-qiao Zhang, Graduate School of Information Science and Technology, Award from the Dean

[3] Takaki Onozato, 46th JSAP Young Scientist Presentation Award

[4] Mian Wei, Best Poster Award (Gold) at 11th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-11)

[5] Qian Yang, Excellent Presentation Award at 2019 Meeting of the Ceramics Society of Japan Tohoku-Hokkaido Branch

[6] Dou-dou Liang, Student Award at The 16th Meeting of Thin Film Materials & Devices Meeting

[7] Kenyu Sugo, Student Award at The 16th Meeting of Thin Film Materials & Devices Meeting

[8] Yugo Takashima, Poster Award at The 20th RIES-HOKUDAI International Symposium 稀

[9] Gowon Kim, Best Poster Award Nomination, 2019 MRS Fall Meeting & Exhibit, December 3, 2019.

[1] 太田裕道, 小野里尚記，国際特許出願 PCT/JP2019/046479　「エレクトロクロミックトランジスタ、電子カーテン、情報表示記憶装置および防眩ミラー」（2019年11月28日 出願）

[10] Hai Jun Cho*, Takaki Onozato, Mian Wei, Anup Sanchela, and Hiromichi Ohta*, “Effects of vacuum annealing on the electron mobility of epitaxial La-doped BaSnO₃ films”, APL Mater. 7, 022507 (2019). (December 12, 2018) (DOI: 10.1063/1.5054154) arXiv

[9] Gowoon Kim, Yu-Qiao Zhang, Taewon Min, Hoyoung Suh, Jae Hyuck Jang, Hyeonjun Kong, Joonhyuk Lee, Jaekwang Lee, Tae-Yeol Jeon, Inwon Lee, Jinhyung Cho, Hiromichi Ohta* and Hyoungjeen Jeen*, “Extremely light carrier effective mass in a distorted simple metal oxide”, Adv. Electron. Mater. 5, 1800504 (2019). (December 7, 2018) (DOI: 10.1002/aelm.201800504) International collaboration, Bilateral Joint Research Projects (JSPS) with Korea (NRF), Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance)

[8] Rongbin Wang, Takayoshi Katase, Ke-Ke Fu, Tianshu Zhai, Jiacheng Yang, Qiankun Wang, Hiromichi Ohta, Norbert Koch,* and Steffen Duhm*, “Oxygen vacancies allow tuning the work function of vanadium dioxide”, Adv. Mater. Interfaces 5, 1801033 (2018) (October 3, 2018) (DOI:10.1002/admi.201801033) International collaboration

[7] Jason Tam, Bin Feng, Yuichi Ikuhara, Hiromichi Ohta*, Uwe Erb*, “Crystallographic orientation – surface energy – wetting property relationships of rare earth oxides”, J. Mater. Chem. A 6, 18384-18388 (2018). (DOI: 10.1039/c8ta04938f) International collaboration, JSPS Summer Program 2017 and Mitacs, Network Joint Research Center for Materials and Devices

[6] Anup V. Sanchela*, Mian Wei, Haruki Zensyo, Bin Feng, Joonhyuk Lee, Gowoon Kim, Hyoungjeen Jeen, Yuichi Ikuhara, and Hiromichi Ohta*, “Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO₃“, Appl. Phys. Lett. 112, 232102 (2018). (DOI: 10.1063/1.5033326) International collaboration, Bilateral Joint Research Projects (JSPS) with Korea (NRF), Network Joint Research Center for Materials and Devices, Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance), Grant-in-Aid for Scientific Research on Innovative Areas (2505) Nanoinformatics arXiv

[5] Yuqiao Zhang, Bin Feng, Hiroyuki Hayashi, Cheng-Ping Chang, Yu-Miin Sheu, Isao Tanaka, Yuichi Ikuhara, and Hiromichi Ohta*, “Double thermoelectric power factor of a 2D electron system”, Nat. Commun. 9, 2224 (2018). (DOI: 10.1038/s41467-018-04660-4) International collaboration, Network Joint Research Center for Materials and Devices, Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance), Grant-in-Aid for Scientific Research on Innovative Areas (2505) Nanoinformatics Detail

[4] Keisuke Nakamura, Tomoya Oshikiri, Kosei Ueno, Takayoshi Katase, Hiromichi Ohta, and Hiroaki Misawa, “Plasmon-Assisted Polarity Switching of a Photoelectric Conversion Device by UV and Visible Light Irradiation”, J. Phys. Chem. C 122, 14064-14071 (2018). (April 10, 2018) (DOI: 10.1021/acs.jpcc.8b01198) Intra-Institute collaboration, Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance)

[3] Ke-Ke Fu, Rong-Bin Wang, Takayoshi Katase, Hiromichi Ohta, Norbert Koch, and Steffen Duhm*, “Stoichiometric and oxygen deficient VO₂ as versatile hole injection electrode for organic semiconductors”, ACS Appl. Mater. Interfaces 10, 10552–10559 (2018). (March 19, 2018) (DOI: 10.1021/acsami.8b00026) International Collaboration

[2] Hirofumi Matsuoka, Kaito Kanahashi, Naoki Tanaka, Yoshiaki Shoji, Lain-Jong Li, Jiang Pu, Hiroshi Ito, Hiromichi Ohta, Takanori Fukushima, and Taishi Takenobu, “Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant”, Jpn. J. Appl. Phys. 57, 02CCB15 (2018). (January 18, 2018) (DOI: 10.7567/JJAP.57.02CB15) Network Joint Research Center for Materials and Devices

[1] Amit Khare, Jaekwang Lee, Jaeseoung Park, Gi-Yeop Kim, Si-Young Choi, Takayoshi Katase, Seulki Roh, Tae Sup Yoo, Jungseek Hwang, Hiromichi Ohta, Junwoo Son, and Woo Seok Choi, “Directing oxygen vacancy channels in SrFeO_2.5 epitaxial thin films”, ACS Appl. Mater. Interfaces 10, 4831-4837 (2018). (January 12, 2018) (DOI: 10.1021/acsami.7b17377) Network Joint Research Center for Materials and Devices

[1] Anup V. Sanchela, Mian Wei, Haruki Zensyo, Bin Feng, Joonhyuk Lee, Gowoon Kim, Hyoungjeen Jeen, Yuichi Ikuhara, and Hiromichi Ohta, “Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO₃“, arXiv:1804.05344 International collaboration, Bilateral Joint Research Projects (JSPS) with Korea (NRF), Network Joint Research Center for Materials and Devices, Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance), Grant-in-Aid for Scientific Research on Innovative Areas (2505) Nanoinformatics

[2] Anup V. Sanchela, Mian Wei, Joonhyuk Lee, Gowoon Kim, Hyoungjeen Jeen, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, Hiromichi Ohta, “Buffer layer-less fabrication of high-mobility transparent oxide semiconductor, La-doped BaSnO₃“, arXiv:1808.07619 International collaboration, Bilateral Joint Research Projects (JSPS) with Korea (NRF), Network Joint Research Center for Materials and Devices, Dynamic Alliance for Open Innovation Bridging Human, Environment, and Materials (Five-Star Alliance)

[3] Hai Jun Cho, Takaki Onozato, Mian Wei, Anup Sanchela, and Hiromichi Ohta, “Oxygen vacancy driven mobility enhancement in epitaxial La-doped BaSnO₃ from vacuum annealing”, arXiv:1808.10570

[1] Hiromichi Ohta and Hidenori Hiramatsu, 10.Fabrication, characterization, and modulation of functional nanolayers, Nanoinformatics, Ed. Isao Tanaka, Springer (26 Feb. 2018)

[1] Hiromichi Ohta, “Thermoelectric properties of semiconductor thin films”, 電子情報通信学会シリコン材料デバイス・電子デバイス合同研究会, Hokkaido University, Sapporo, Japan, 28th Feb – 1st March, 2018 (Invited, Domestic)

[2] Hiromichi Ohta, “水を使った機能性酸化物の光・電気・磁気特性切替え”, 平成29年度日本表面科学会東北・北海道支部講演会, 室蘭工業大学, 北海道室蘭市, 8th-9th March, 2018 (Invited, Domestic)

[3] Hiromichi Ohta, “Thermoelectric Seebeck effect of two-dimensional electron system”, 65th JSAP Spring Meeting, Waseda University, Tokyo, Japan, 17th-20th March, 2018 (Invited, Domestic)

[4] Hiromichi Ohta, “Thermopower of two-dimensional electron system”, Physics Seminar in Pusan National University, Busan, Korea, 30th April, 2018 (Invited)

[5] Hiromichi Ohta, “Thermoelectric Seebeck effect of 2D electron systems”, The first International Joint Symposium of CEFMS-NCTU, RCAS-AS (Taiwan) and 5-Star Alliance (Japan), National Chiao Tung University, Taiwan, 18th-20th May, 2018 (Invited)

[6] Hiromichi Ohta, “二次元電子層のSeebeck効果－人工超格子と電界誘起二次元電子ガス－”, 物性談話会, Nagoya University, Nagoya, Japan, 14th June, 2018 (Invited, Domestic)

[7] Hiromichi Ohta, “Electric field thermopower modulation of two-dimensional electron gas”, The 25th International Workshop on Active-Matrix Flatpanel Displays and Devices – TFT Technologies and FPD Materials – (AM-FPD 18), Ryukoku University Avanti Kyoto Hall, Kyoto, Japan, 3rd-6th July, 2018 (Invited)

[8] Hiromichi Ohta, “Double enhancement of thermoelectric power factor in two-dimensional electron system”, the 16th International Nanotech Symposium & Nano-Convergence Exhibition, NANO KOREA 2018, KINTEX, Ilsan, Korea, July 10-13, 2018 (Invited)

[9] Hiromichi Ohta, “捨てられている熱を電気に変える熱電変換材料”, 国立大学共同利用・共同研究拠点協議会 知の拠点セミナー, Tokyo Office of Kyoto University, Tokyo, Japan, 20th July, 2018 (Invited, Domestic)

[10] Hiromichi Ohta, “Thermopower of 2D electron systems”, The 2018 International Symposium for Advanced Materials Research (ISAMR 2018), Sun Moon Lake, Taiwan, August 16-19, 2018 (Invited)

[11] Hiromichi Ohta, “Development of three-terminal electrochromic device using water electrolysis”, IUMRS-ICEM 2018, Daejeon, South Korea, 19th-24th August, 2018 (Invited)

[12] Hiromichi Ohta, “Double thermoelectric power factor of a 2D electron system”, the International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2018), Jeju, South Korea, 11th-14th November, 2018 (Invited)

[13] Hiromichi Ohta, “Electric field thermopower modulation measurements of two-dimensional electron gas”, International mini-workshop on Nonequlibrium transport and phase transition in novel materials, Nanoya Univ., Nagoya, 26th November, 2018 (Invited)

[14] Hai Jun Cho, “Observation of coherent thermal conduction across natural superlattices”, International mini-workshop on Nonequlibrium transport and phase transition in novel materials, Nanoya Univ., Nagoya, 26th November, 2018 (Invited)

[1] M. Wei, A. V. Sanchela, B.Feng, J. Lee, G. Kim, H. Jeen, Y. Ikuhara and H. Ohta, “Origin of mobility suppression in La-doped BaSnO₃ films”, 第53回応用物理学会北海道支部/第14回日本光学会北海道支部合同学術講演会, Hokkaido University, 6-7 Jan. 2018 (Domestic) Encouragement Award

[2] 小山田達郎, 片瀬貴義, 太田裕道, 山ノ内路彦, “La_0.67Sr_0.33MnO₃/SrTiO₃ホールバー構造における電流誘起有効磁場の膜厚・チャネル方向依存性”, 第53回応用物理学会北海道支部/第14回日本光学会北海道支部合同学術講演会, Hokkaido University, 6-7 Jan. 2018 (Domestic)

[3] Rongbin Wang, Keke Fu, Takayoshi Katase, Hiromichi Ohta, Steffen Duhm, and Norbert Koch, “Vanadium dioxide as high work function electrode”, DPG Spring Meeting and EPS-CMD27, Berlin, 11-16 March, 2018

[4] Hiroaki Nakade, Shun Kondo, Eita Tochigi, Bin Feng, Yukio Nezu, Hiromichi Ohta, Naoya Shibata, and Yuichi Ikuhara, “Direct observation of martensitic phase transformation in yttria stabilized tetragonal zirconia”, 6th International Symposium on Advanced Ceramics (ISAC-6), Tohoku University, Sendai, Japan, March 12-14, 2018

[5] 中出博暁, 栃木栄太, 馮 斌, 柴田直哉, 幾原雄一, 近藤 隼, 根津有希央, 太田裕道, “イットリア安定化正方晶ジルコニアの応力誘起相変態その場観察”, 日本セラミックス協会 2018年年会, Tohoku University, 15-18 March, 2018 (Domestic)

[6] Mian Wei, Anup V. Sanchela, Bin Feng, Joonhyuk Lee, Gowoon Kim, Hyoungjeen Jeen, Yuichi Ikuhara, and Hiromichi Ohta, “Origin of Mobility Suppression in La-doped BaSnO₃ Films (II)”, 2018年 第65回応用物理学会春季学術講演会, Waseda University (Tokyo), 17-20 March, 2018 (Domestic)

[7] Anup V. Sanchela, Mian Wei, Bin Feng, Joonhyuk Lee, Gowoon Kim, Hyoungjeen Jeen, Yuichi Ikuhara, and Hiromichi Ohta, “Origin of Mobility Suppression in La-doped BaSnO₃ Films (II)”, 2018年 第65回応用物理学会春季学術講演会, Waseda University (Tokyo), 17-20 March, 2018 (Domestic)

[8] Hisaaki Tanaka, Naoya Takekoshi, Kaito Kanahashi, Hiromichi Ohta, Hiroshi Ito, Taishi Takenobu, “Electronic and thermoelectric properties of conducting polymers under electrolyte gating”, 2018年 第65回応用物理学会春季学術講演会, Waseda University (Tokyo), 17-20 March, 2018 (Domestic)

[9] Y. Zhang, B. Feng, H. Hayashi, I. Tanaka, Y. Ikuhara, and H. Ohta, “Double enhancement of thermoelectric power factor in advanced oxide two-dimensional electron system”, 2018 MRS Spring Meeting & Exhibit, Phoenix, Arizona, 2-6 April, 2018

[10] Gowoon Kim, Yu-Qiao Zang, Taewon Min, Hoyoung Suh, Jae Hyuck Jang, Hyeonjun Kong, Joonhyuk Lee, Jaekwang Lee, Tae-Yeol Jeon, Inwon Lee, Jinhyung Cho, Hiromichi Ohta and Hyoungjeen Jeen, “Orientation dependent physical properties of epitaxial NbO₂ thin films”, 2018 KSP Spring Meeting, Daejeon Convention Center, Daejeon, Korea, 25th-27th April, 2018. Korea-Japan Bilateral program (NRF, JSPS), Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials

[11] Yuqiao Zhang, Bin Feng, Hiroyuki Hayashi, Cheng-Ping Chang, Yu-Miin Sheu, Isao Tanaka, Yuichi Ikuhara, Hiromichi Ohta, “Double thermoelectric power factor of a 2D electron system”, The first International Joint Symposium of CEFMS-NCTU, RCAS-AS (Taiwan) and 5-Star Alliance (Japan), National Chiao Tung University, Taiwan, 18th-20th May, 2018

[12] Hiroaki Nakade, Shun Kondo, Eita Tochigi, Bin Feng, Yukio Nezu, Hiromichi Ohta, Naoya Shibata, and Yuichi Ikuhara, “In-situ TEM observation of stress induced phase transformation in zirconia”, 18th International Conference on the Strength of Materials (ICSMA 18), The Ohio State University, Clumbus, Ohio, USA, July 15-19, 2018

[13] Kaito Kanahashi, Naoya Takekoshi, Haruka Isoai, Yong-Young Noh, Hiromichi Ohta, Hisaaki Tanaka, and Taishi Takenobu, “Thermoelectric properties of organic donor-acceptor copolymers investigated by electrolyte gating”, 2018 KJF International Conference on Organic Materials for Electronics and Photonics (KJF-ICOMEP 2018), Nagaragawa, Gifu, Japan, September 4-7, 2018 International collaboration, Network Joint Research Center for Materials and Devices

[14] Yuqiao Zhang, Bin Feng, Hiroyuki Hayashi, Cheng-Ping Chang, Yu-Miin Sheu, Isao Tanaka, Yuichi Ikuhara, and Hiromichi Ohta, “Double thermoelectric power factor of a 2D electron system, SrTiO₃-based superlattice”, 日本セラミックス協会 第31回秋季シンポジウム, 名古屋工業大学（愛知）, September 5-7, 2018  International collaboration, Network Joint Research Center for Materials and Devices

[15] Michihiko Yamanouchi, Tatsuro Oyamada, Koichi Sato, Jun’ichi Ieda, and Hiromichi Ohta, “Current-induced effects on domain wall motion in SrRuO₃“, 2018年 第79回 応用物理学会秋季学術講演会, 名古屋国際会議場（名古屋・愛知）, 2018年9月18日-21日

[16] Hai Jun Cho, Wei Mian, Feng Bin, Anup V. Sanchela, Yuichi Ikuhara, Hiromichi Ohta, “Investigation of the Electron Mobility in La-doped BaSnO₃ films using Time-Domain Thermoreflectance (TDTR) Method”, 2018年 第79回 応用物理学会秋季学術講演会, 名古屋国際会議場（名古屋・愛知）, 2018年9月18日-21日 Network Joint Research Center for Materials and Devices

[17] 小野里尚記, Cho Hai Jun，Yi-Ming Chang, Yu-Miin Sheu, フウ ビン, 幾原雄一, 太田裕道, “TDTR法による層状酸化物薄膜の熱伝導率の結晶方位依存性計測”, 2018年 第79回 応用物理学会秋季学術講演会, 名古屋国際会議場（名古屋・愛知）, 2018年9月18日-21日 国際共同研究, 物質デバイス領域共同研究拠点 International collaboration, Network Joint Research Center for Materials and Devices

[18] M. Wei, A. Sanchela, J. Lee, G. Kim, H. Jeen, B. Feng, Y. Ikuhara, H. Cho and H. Ohta, “A perverse transparent oxide semiconductor, La:BaSnO₃“, 2018年 第79回 応用物理学会秋季学術講演会, 名古屋国際会議場（名古屋・愛知）, 2018年9月18日-21日 Korea-Japan Bilateral program (NRF, JSPS), International collaboration, Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials

[19] Tatsuro Oyamada, Hiromichi Ohta, and Michihiko Yamanouchi, “Anomalous magneto-transports of La_0.67Sr_0.33MnO₃/2DES-LaAlO₃/SrTiO₃“, 2018年 第79回 応用物理学会秋季学術講演会, 名古屋国際会議場（名古屋・愛知）, 2018年9月18日-21日

[20] Y. Wu, H. Cho, B. Feng, M. Mikami, W. Shin, Y. Ikuhara, and H. Ohta, “Cross-plane thermal conductivity of InGaO₃(ZnO)_m (m=integer) single crystalline thin films”, 2018年 第79回 応用物理学会秋季学術講演会, 名古屋国際会議場（名古屋・愛知）, 2018年9月18日-21日 Network Joint Research Center for Materials and Devices

[21] H.J. Cho, M. Wei, A. Sanchela, and H. Ohta, “Effect of dopants on the thermal stability of oxygen in BaSnO₃ and engineering of electronic transport properties”, The 2nd Workshop on Functional Materials Science, Busan, South Korea, October 22-23, 2018

[22] Y. Zhang, H.J. Cho, M. Mikami, W.S. Shin, W.S. Choi, and H. Ohta, “Anomalous phonon transport in SrTi_1-xNbxO₃ alloy”, The 2nd Workshop on Functional Materials Science, Busan, South Korea, October 22-23, 2018 Network Joint Research Center for Materials and Devices

[23] T. Onozato, H.J. Cho, Y-M. Chang, Y-M. Sheu, B. Feng, Y. Ikuhara, and H. Ohta, “Anisotropic thermal conduction behavior of a complicated layered structure oxide”, The 2nd Workshop on Functional Materials Science, Busan, South Korea, October 22-23, 2018 International collaboration

[24] G. Kim, Y. Zhang, T. Min, H. Seo, J. Jang, H. Kong, J-H. Lee, J-K. Lee, T.Y. Jeon, I. Lee, J.H. Cho, H. Ohta, and H. Jeen, “A facile path for electron hopping in NbO₂“, The 2nd Workshop on Functional Materials Science, Busan, South Korea, October 22-23, 2018 Korea-Japan Bilateral program (NRF, JSPS), International collaboration, Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials

[25] M. Wei, A. Sanchela, J. Lee, G. Kim, H. Jeen, B. Feng, Y. Ikuhara, H. Cho, and H. Ohta, “Electron mobility improvement of La-doped BaSnO₃ films grown under the ozone atmosphere”, The 2nd Workshop on Functional Materials Science, Busan, South Korea, October 22-23, 2018 Korea-Japan Bilateral program (NRF, JSPS), International collaboration, Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials, Network Joint Research Center for Materials and Devices

[26] Y. Wu, H. Cho, B. Feng, M. Mikami, W. Shin, Y. Ikuhara, and H. Ohta, “Heat transportation across parallel layers of natural superlattice InGaO₃(ZnO)_m single crystalline films”, The 2nd Workshop on Functional Materials Science, Busan, South Korea, October 22-23, 2018 Network Joint Research Center for Materials and Devices

[27] 呉 宇璋, ジョ ヘジュン, フウ ビン, 三上祐史, 申 ウソク, 幾原雄一, 齊藤圭司, 太田裕道, “酸化物自然超格子InGaO₃(ZnO)_mのKapitza抵抗”, 平成30年度日本セラミックス協会東北北海道支部研究発表会, 日本大学工学部（福島県郡山市）, November 2-3, 2018  Network Joint Research Center for Materials and Devices

[28] Gowoon Kim, Yu-Qiao Zang, Taewon Min, Hoyoung Seo, Jaehyuck Jang, Hyeonjun Kong, Joonhyuk Lee, Jaekwang Lee, Tae-Yeol Jeon, Inwon Lee, JinHyung Cho, Hiromichi Ohta, and Hyoungjeen Jeen, “Facile path for electron hopping in epitaxial NbO₂ thin films”, the International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2018), Jeju, South Korea, 11th-14th November, 2018 Korea-Japan Bilateral program (NRF, JSPS), International collaboration, Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials

[29] Hai Jun Cho, Hiromichi Ohta, “Time-domain thermoreflectance: A powerful tool for the thermal conductivity measurement of thin films”, The 19th RIES-HOKUDAI International Symposium 組[So], Jozankei View Hotel, Sapporo, December 11th-12th, 2018 (Poster)

[30] Gowoon Kim, Yu-Qiao Zhang, Taewon Min, Hoyoung Suh, Jae Hyuck Jang, Hyeonjun Kong, Joonhuyk Lee, Jaekwang Lee, Tae-Yeol Jeon, Inwon Lee, Jinhyung Cho, Hiromichi Ohta, Hyoungjeen Jeen, “Extremely light carrier effective mass in a distorted simple metal oxide, NbO₂“,  The 19th RIES-HOKUDAI International Symposium 組[So], Jozankei View Hotel, Sapporo, December 11th-12th, 2018 (Poster) Korea-Japan Bilateral program (NRF, JSPS), International collaboration, Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials

[31] T. Onozato, H.J. Cho, Y-M. Chang, Y-M. Sheu, B. Feng, Y. Ikuhara, H. Ohta, “Thermal conductivity anisotropy of layered complex oxide”, The 19th RIES-HOKUDAI International Symposium 組[So], Jozankei View Hotel, Sapporo, December 11th-12th, 2018 (Poster) International collaboration, Network Joint Research Center for Materials and Devices

[32] Anup V. Sanchela, Mian Wei, Hai Jun Cho, Hiromichi Ohta, “Electric field thermopower modulation of BaSnO₃−SrSnO₃ solid solutions”, The 19th RIES-HOKUDAI International Symposium 組[So], Jozankei View Hotel, Sapporo, December 11th-12th, 2018 (Poster)

[33] Mian Wei, Anup V. Sanchela, Hai Jun Cho, Hiromichi Ohta, “Thermopower analysis of effective mass in a transparent oxide semiconductor, La-doped SrSnO₃“, The 19th RIES-HOKUDAI International Symposium 組[So], Jozankei View Hotel, Sapporo, December 11th-12th, 2018 (Poster) Poster Award

[34] Y. Wu, H.J. Cho, B. Feng, M. Mikami, W. Shin, Y. Ikuhara, K. Saito, H. Ohta, “Kapitza resistance based ultralow thermal conductivity of natural superlattice ceramic single crystalline films”, The 19th RIES-HOKUDAI International Symposium 組[So], Jozankei View Hotel, Sapporo, December 11th-12th, 2018 (Poster) Network Joint Research Center for Materials and Devices

[35] Y. Zhang, H.J. Cho, M. Mikami, W.S. Shin, W.S. Choi, H. Ohta, “Phase transition induced anomalous phonon transports in SrTiO₃−SrNbO₃ system”, The 19th RIES-HOKUDAI International Symposium 組[So], Jozankei View Hotel, Sapporo, December 11th-12th, 2018 (Poster) International collaboration, Network Joint Research Center for Materials and Devices

[1] 日刊工業新聞，「電子閉じ込めで熱電変換向上 北大」, 2018年6月21日 27面

[2] OPTRONICS ONLINE, “北大、熱電変換材料の性能を2倍にできることを実証”, 2018年6月21日

[3] Fabcross for エンジニア, “熱電材料の性能を従来比2倍に増強―北大、電子を狭い空間に閉じ込め熱電材料を高性能化する理論を実証”, 2018年6月22日

[4] “Electron Sandwich Doubles Thermoelectric Performance”, I Connect 007, June 20, 2018

[5] “Electron Sandwich Doubles Thermoelectric Performance”, Chem Europe.com, June 21, 2018

[6] “Electron Sandwich Doubles Thermoelectric Performance”, Tech Explorist, June 20, 2018

[7] “Electron Sandwich Doubles Thermoelectric Performance”, Photonics Online, June 20, 2018

[8] “Electron Sandwich Doubles Thermoelectric Performance”, Spinoff.com, June 20, 2018

[9] “Electron Sandwich Doubles Thermoelectric Performance”, Phys.org, June 20, 2018

[10] “Artificial Superlattice Yields Higher Voltage and Improves Thermoelectric Conversion Rate”, AZO Materials, June 21, 2018

[11] “Electron sandwich doubles thermoelectric performance”, EurekAlert!, June 20, 2018

[12] “Electron sandwich doubles thermoelectric performance”, Science Daily, June 20, 2018

[13] “交通大學與北海道大學跨校合作 研發電子三明治使熱電性能倍增”, National Chiao Tung University, June 20, 2018

[14] “Electron sandwich doubles the thermoelectric performance!”, Device & Materials Engineering, Nature Research, June 20, 2018

[15] “Electron sandwich doubles thermoelectric performance”, Science & Technology Research News, June 20, 2018

[16] “Electron sandwich doubles thermoelectric performance”, Revolution Green, June 21, 2018

[17] “Electron sandwich doubles thermoelectric performance, BrightSurf.com, June 20, 2018

[18] “Electron sandwich doubles thermoelectric efficiency (News)”, PressCute.com, June 20, 2018

[19] “Electron sandwich doubles thermoelectric performance”, Green Car Congress, June 25, 2018

[20] “Electron sandwich doubles thermoelectric performance”, Innovations Report, June 20, 2018

[21] “Artificial Superlattice Yields Higher Voltage and Improves Thermoelectric Conversion Rate”, Converter News, June 21, 2018

[22] “Tech: Electron sandwich doubles thermoelectric performance — (Report)”, TuniseSoir News, June 20, 2018

[23] “Electron sandwich doubles thermoelectric performance”, Nanowerk, June 20, 2018

[24] “Electron sandwich doubles thermoelectric performance”, Programming News Payments & Trade Networks, June 27, 2018

[25] “Electron sandwich doubles thermoelectric performance”, Technology News, June 20, 2018

[26] “Electron sandwich doubles thermoelectric performance”, ECN, June 20, 2018

[27] “Thermoelectric performnce doubles in electron sandwich”, New Energy and Fuel, June 27, 2018

[28] “Researches Improve Ability Of Material To Convert Heat Into Electricity”, Chem Info, June 21, 2018

[29] 日刊工業新聞, 「車の廃熱再利用」, 2018年6月28日

[30] dmenu ニュース, 「自動車エンジンまわりの熱を電気に変換する材料開発へ」, 2018年6月28日

[31] “Nature子刊：研究人员将热电材料的转化效率提高了一倍多”, 中国材料网, June 25, 2018

[32] “Nature子刊：研究人员将热电材料的转化效率提高了一倍多”, 中国科学院上海硅酸盐研究所, June 27, 2018

[33] “Hokkaido University design sandwich structure enhances electron diffusion capability”, June 28, 2018

[34] “Superlattice ‘Sandwich’ Converts Wasted Heat To Electricity”, Asian Scientist Newsroom, July 4, 2018

[1] Encouragement Award for Presentation in Hokkaido Branch of the Japan Society of Applied Physics, Mian Wei, Anup V. Sanchela, Bin Feng, Joonhyuk Lee, Gowoon Kim, Hyoungjeen Jeen, Yuichi Ikuhara, Hiromichi Ohta, “Origin of mobility suppression in La-doped BaSnO₃ films”, The 53rd JSAP Hokkaido Branch Meeting, Hokkaido University, Sapporo, Japan, 6-7 January, 2018

[2] Anup V. Sanchela, 47th Matsumoto-Hatori Award of Research Institute for Electronic Science, Hokkaido University

[3] Mian Wei, Poster Award, The 19th RIES-Hokudai International Symposium Mian Wei, Anup V. Sanchela, Hai Jun Cho, Hiromichi Ohta, “Thermopower analysis of effective mass in a transparent oxide semiconductor, La-doped SrSnO₃“, The 19th RIES-HOKUDAI International Symposium 組[So], Jozankei View Hotel, Sapporo, December 11th-12th, 2018 (Poster)

[1] US 10,032,892 B2, “Semiconductor Device”, Hiromichi Ohta, Takayoshi Katase, Yuki Suzuki, National University Corporation Hokkaido University, PCT Filed Jan. 6, 2016, Date of Patent Jul. 24, 2018

[2] 太田裕道, 小野里尚記, 特願2018-243861　「エレクトロクロミックトランジスタ、電子カーテン、情報表示記憶装置および防眩ミラー」（2018年12月27日 出願）

[1] 太田裕道, “捨てられている熱を電気に変えよう！”, 札幌市青少年科学館 先端科学技術講座, 18 Feb. 2018 (Domestic) LINK

[2] 太田裕道, “石ころ素材で役に立つ素子を作る”, 知のフロンティア 北海道大学の研究者は、いま 第4号, 188-189 (2018).

[3] 太田裕道, “色と導電性の変化で情報表示・記憶する半導体素子－窓ガラスや鏡がメモリーに？”, 北海道大学研究シーズ集 Vol. 5, p.XXX (2018)

[4] 太田裕道, “酸化物ナノ層の熱電特性増強”, 文部科学省 科学研究費補助金 新学術領域研究 「ナノ構造情報のフロンティア開拓‐材料科学の新展開」 第5回公開シンポジウム, メルパルク京都, 京都, 2018年3月7日 Poster

[5] 太田裕道, “セラミックス素材で役に立つモノを創ります”, 北海道大学2018 大学案内 Be ambitious, p.10 (2018).

[6] H. Ohta, Co-organizer of IUMRS-ICEM 2018, Daejeon, South Korea, 19th-24th August, 2018

[7] Hiromichi Ohta, Behind the paper: “Electron sandwich doubles the thermoelectric performance!”, Device & Materials Engineering, A community from Nature Research, posted on June 20th, 2018.

[8] H. Ohta, Co-organizer of The 2nd Workshop on Functional Materials Science, Busan, South Korea, October 22-23, 2018.

[12] Hiromichi Ohta*, Sung Wng Kim, Shota Kaneki, Atsushi Yamamoto, and Tamotsu Hashizume*, “High thermoelectric power factor of high-mobility two-dimensional electron gas”, Adv. Sci. 4, 1700696 (2017). (DOI: 10.1002/advs.201700696

[11] Yukio Nezu, Yu-Qiao Zhang, Chunlin Chen, Yuichi Ikuhara, and Hiromichi Ohta, “Solid-phase epitaxial film growth and optical properties of a ferroelectric oxide, Sr₂Nb₂O₇“, J. Appl. Phys. 122, 135305 (2017). (DOI: 10.1063/1.4997813)

[10] Takayoshi Katase, Yuki Suzuki , Hiromichi Ohta, “Highly conducting leakage-free electrolyte for SrCoO_x-based non-volatile memory device”, J. Appl. Phys. 122, 135303 (2017). (DOI: 10.1063/1.5005520) arXiv

[9] Jae-Yeol Hwang, Young-Min Kim, Kyu Hyoung Lee, Hiromichi Ohta, Sung Wng Kim, “Te monolayer-driven spontaneous van der Waals epitaxy of two-dimensional pnictogen chalcogenide film on sapphire”, Nano Lett. Article ASAP (DOI: 10.1021/acs.nanolett.7b02737)

[8] Shao-Pin Chiu, Michihiko Yamanouchi, Tatsuro Oyamada, Hiromichi Ohta, and Juhn-Jong Lin, “Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La_2/3Sr_1/3MnO₃ thin film”, Phys. Rev. B 96, 085143 (2017). (DOI: 10.1103/PhysRevB.96.085143) arXiv

[7] A.V. Sanchela, T. Onozato, B. Feng, Y. Ikuhara, and H. Ohta, “Thermopower modulation clarification of the intrinsic effective mass in a transparent oxide semiconductor, BaSnO₃“, Phys. Rev. Mater. 1, 034603 (2017). (DOI: 10.1103/PhysRevMaterials.1.034603) arXiv

[6] Amit Khare, Dongwon Shin, Taesup Yoo, Minu Kim, Tae Dong Kang, Jaekwang Lee, Seulki Roh, Jungseek Hwang, Sung Wng Kim, Tae Won Noh, Hiromichi Ohta, and Woo Seok Choi, “Topotactic Metal-Insulator Transition in Epitaxial SrFeO_x Thin Films”, Adv. Mater. 29, 1606566 (2017). (DOI: 10.1002/adma.201606566)

[5] Yuqiao Zhang, Bin Feng, Hiroyuki Hayashi, Tetsuya Tohei, Isao Tanaka, Yuichi Ikuhara, and Hiromichi Ohta, “Thermoelectric phase diagram of the SrTiO₃-SrNbO₃ solid solution system”, J. Appl. Phys. 121, 185102-1-7(2017). (doi: 10.10631/1.4983359) arXiv

[4] Takayoshi Katase, Kenji Endo, and Hiromichi Ohta, “Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate”, APL Mater. 5, 056105 (2017). (doi: 10.1061/1.4983276) arXiv

[3] Shota Katayama, Takayoshi Katase, Tetsuya Tohei, Bin Feng, Yuichi Ikuhara, and Hiromichi Ohta, “Reactive solid-phase epitaxy and electrical conductivity of layered sodium manganese oxide films”, Cryst. Growth Des. 17, 1849-1853 (2017).(doi: 10.1021/acs.cgd.6b01810)

[2] Kazuma Funahashi, Naoki Tanaka, Yoshiaki Shoji, Naoki Imazu, Ko Nakayama, Kaito Kanahashi, Hiroyuki Shirae, Suguru Noda, Hiromichi Ohta, Takanori Fukushima, and Taishi Takenobu, “Remarkably air- and moisture-stable hole-doped carbon nanotube films by a boron-based oxidant”, Appl. Phys. Express 10, 035101 (2017). (DOI:10.7567/APEX.10.035101).

[1] Eun Sung Kim, Jae-Yeol Hwang, Kyu Hyoung Lee, Hiromichi Ohta, Young Hee Lee, and Sung Wng Kim, “Graphene Substrate for Van der Waals Epitaxy of Layer Structured Bismuth Antimony Telluride Thermoelectric Film”, Adv. Mater. 29, 1604899 (2017). (DOI: 10.1002/adma.201604899).

[1] Michihiko Yamanouchi, Tatsuro Oyamada, Takayoshi Katase, and Hiromichi Ohta, “Current-induced effective magnetic field in a half-metallic oxide La_0.67Sr_0.33MnO₃“, arXiv:1704.05989.

[1] Hiromichi Ohta, Chapter 18 Thermoelectrics based on oxide thin films in “Metal Oxide-Based Thin Film Structures (1st Edition) Formation, Characterization and Application of Interface-based Phenomena”, Ed. Nini Pryds, Vicenzo Esposito (ISBN 9780128111666), ELSEVIER (published 1st September 2017).

[1] 太田裕道, “特別記事・注目をあびるエレクトロクロミック材料とその可能性－窓ガラスがメモリーとして利用可能に－”, 工業材料（日刊工業新聞社）, 65 [1], 78-82 (2017). (in Japanese)

[2] Takayoshi Katase and Hiromichi Ohta, “Transition-metal-oxide based functional thin-film device using leakage-free electrolyte”, J. Ceram. Soc. Jpn. 125, 608-615 (2017). The 71st CerSJ Awards for Advancements in Ceramic Science and Technology (Dr. Katase): Review

[1] H. Ohta, “Thermoelectric Seebeck effect of two dimensional electron gas in SrTiO₃“, International conference on Advances in Functional Materials, Anna University, Chennai, India, 6-8 January, 2017 (Invited)

[2] 太田裕道, “導電性酸化物薄膜の物性改質方法”, 第64回応用物理学会春季学術講演会（合同セッションK, シンポジウム「金属酸化物の結晶物性に迫る」）, パシフィコ横浜, 神奈川, 14-17 March, 2017 (Domestic)

[3] 片瀬貴義, 太田裕道, （平成28年度進歩賞受賞講演）”遷移金属酸化物の酸化・還元を利用した薄膜機能デバイスの開発”, 日本セラミックス協会2017年 年会, 日本大学駿河台キャンパス, 東京, 17-19 March, 2017 (Domestic)

[4] 片瀬貴義, 太田裕道, “遷移金属酸化物の電気化学反応を利用した機能変調デバイス”, 6大学連携プロジェクト公開討論会, 名古屋大学, 名古屋, 30 March, 2017 (Domestic)

[5] H. Ohta, “Electrochemical function modulation of oxides using three-terminal thin film transistor structure with water infiltrated insulator”, The 3rd Functional Oxide Thin Films for Advanced Energy and Information Technology, Sheraton Roma, Roma, Italy, 5-8 July, 2017 (Invited)

[6] H. Ohta, “Electric Field Modulation of Thermopower in Two-dimensional Electron Gas”, IUMRS-ICAM (The 15th International Conference on Advanced Materials), Yoshida Campus, Kyoto University, Kyoto, Japan, 27 August-1 September, 2017 (Invited)

[7] 太田裕道, “水を使った機能性酸化物薄膜の光・電気・磁気物性切替え手法”, 産業技術総合研究所 中部センター 講演会, 産総研中部センター（愛知県, 名古屋市）, 5 September, 2017 (Domestic)

[8] 太田裕道, “固相エピタキシャル成長法を駆使した機能性酸化物ナノ層の創製”, 日本金属学会 2017年 秋期講演大会, 北海道大学, 札幌, 6-8 September, 2017 (Domestic)

[9] Hiromichi Ohta, “Electrochemical modulation of functional oxides using three-terminal thin film transistor structure with water infiltrated gate dielectrics”, Seminar at Tshinghua University (hosted by Prof. Yu Pu), Tshinghua University, Beijing, China, 26 September, 2017 (seminar talk, Invited by Prof. Yu Pu)

[10] Hiromichi Ohta, “Epitaxial film growth and some applications of functional oxides”, Distinguished Lecture Series at Materials Science & Engineering, University of Toronto, Toronto (Canada), 3rd October, 2017 (Invited)

[11] Michihiko Yamanouchi, Tatsuro Oyamada, Takayoshi Katase, and Hiromichi Ohta, “Current-induced effective magnetic field in La_0.67Sr_0.33MnO₃/SrTiO₃“, The 9th RIES-CIS symposium, National Chiao Tung University, Taiwan, 27th October, 2017 (Invited)

[12] Hiromichi Ohta, “Electric field thermopower modulation measurement”, Seoul National University, Seoul (Korea), 13 October, 2017 (seminar talk, Invited by Prof. Char)

[13] 太田裕道, “薄膜トランジスタ構造を用いた熱電能の計測”, 第14回 薄膜材料デバイス研究会, 龍谷大学 響都ホール校友会館, 京都, 20-21 October, 2017 (Domestic)

[14] Hiromichi Ohta and Yu-Qiao Zhang, “Double enhancement of thermoelectric power factor in oxide two-dimensional electron system via precise dimensionality control”, 2017 Fall Korean Physical Society (KPS) Meeting, Gyeongju, Korea, 25-27 October, 2017 (Invited)

[15] 片瀬貴義, 太田裕道, “含水多孔質ガラスを用いたオンデマンド赤外線透過率-導電率制御デバイス”, 日本真空学会 スパッタリングおよびプラズマプロセス技術部会, 機械振興会館（東京都）, 31 October, 2017 (Domestic)

[16] Takayoshi Katase and Hiromichi Ohta, “Room-temperature-protonation-driven optoelectronic device with water-gated thin-film-transistor structure”, the 8th International Conference and Exhibition on Lasers, Optics & Photonics, Las Vegas, USA, 15-17 November, 2017 (Invited)

[17] H. Ohta and A. Sanchela, “Thermopower of oxide heterostructure”, ICAMD2017 (The 11th International Conference on Advanced Materials and Devices), Jeju, Korea, 5-8 December, 2017 (Invited)

[1] Kaito Kanahashi, Jiang Pu, Nguyen Thanh Cuong, Chang-Hsiao Chen, Lain-Jong Li, Susumu Okada, Hiromichi Ohta, Shinya Takaishi and Taishi Takenobu, “Thermoelectric Properties in Two-Dimensional Transition Metal Dichalcogenide Monolayers and One-Dimensional Metal Complexes”, 3rd International Symposium on π-System Figuration, Nagoya University, Nagoya, 27th-28th Jan. 2017

[2] Anup V. Sanchela, Takaki Onozato, Bin Feng, Yuichi Ikuhara, and Hiromichi Ohta, “Thermopower modulation clarification of intrinsic carrier transport of novel transparent conducting oxide, BaSnO₃“, IUMRS-ICAM 2017 (The 15th International Conference on Advanced Materials), Yoshida Campus, Kyoto University, Kyoto, Japan, 27 Aug.-1 Sep. 2017 (Oral).   Award for encouragement of research

[3] Y. Zhang, B. Feng, H. Hayashi, T. Tohei, I. Tanaka, Y. Ikuhara, and H. Ohta, “Thermoelectric Performance of SrTi_1-xNb_xO₃ System (Bulk and Superlattices)”, IUMRS-ICAM 2017 (The 15th International Conference on Advanced Materials), Yoshida Campus, Kyoto University, Kyoto, Japan, 27 Aug.-1 Sep. 2017 (Oral).

[4] Anup V. Sanchela, H. Zensyou, Bin Feng, Yuichi Ikuhara and Hiromichi Ohta, “High-mobility transparent conducting BaSnO₃ film”, The 18th RIES-Hokudai International Symposium 極 [Kyoku], Chateraise Gateaux Kingdom Sapporo, Sapporo, Japan, 30 Nov.-1 Dec. 2017

[5] Y. Zhang, B. Feng, H. Hayashi, I. Tanaka, Y. Ikuhara, and H. Ohta, “Double enhancement of thermoelectric power factor in advanced oxide two-dimensional electron system”, The 18th RIES-Hokudai International Symposium 極 [Kyoku], Chateraise Gateaux Kingdom Sapporo, Sapporo, Japan, 30 Nov.-1 Dec. 2017

[6] Y. Nezu, Y. Zhang, C. Chen, Y. Ikuhara, and H. Ohta, “Solid-phase epitaxial film growth and optical properties of a ferroelectric oxide, Sr₂Nb₂O₇“, The 18th RIES-Hokudai International Symposium 極 [Kyoku], Chateraise Gateaux Kingdom Sapporo, Sapporo, Japan, 30 Nov.-1 Dec. 2017

[7] Takaki Onozato, Yi-Ming Chang, Yu-Miin Sheu, and Hiromichi Ohta, “Absence of thermal conductivity anisotropy in Ca₃Co₄O₉“, The 18th RIES-Hokudai International Symposium 極 [Kyoku], Chateraise Gateaux Kingdom Sapporo, Sapporo, Japan, 30 Nov.-1 Dec. 2017

[1] “Method for recycling waste energy with 2D electron gas developed”, Electronics 360, November 20, 2017

[2] “Reusing waste energy with 2-D electron gas”, Science Daily, November 20, 2017

[3] “Reusing waste energy with 2-D electron gas”, Technology Breaking News, November 20, 2017

[4] “Reusing waste energy with 2-D electron gas”, EurekAlert!, November 20, 2017

[5]  “Reusing waste energy with 2-D electron gas”, Phys.org, November 20, 2017

[6] “Reusing waste energy with 2-D electron gas”, Science Newsline, November 20, 2017

[7] “Reusing waste energy with 2D electron gas”, Humanitarian News, November 20, 2017

[8] “Reusing waste energy with 2-D electron gas”, Physics News, November 20, 2017

[9] “Reusing waste energy with 2D electron gas”, EnviromentGuru, November 20, 2017

[10] “Reusing waste energy with 2-D electron gas”, The Expanding Universe, November 20, 2017

[11] “Reusing waste energy with 2-D electron gas”, 15 Minute News, November 20, 2017

[12] “Reusing waste energy with 2-D electron gas”, Parallel State, November 20, 2017

[13] “Reusing waste energy with 2-D electron gas”, My News, November 20, 2017

[14] “Reusing waste energy with 2-D electron gas”, HiTechDays, November 20, 2017

[15] “Reusing waste energy with 2-D electron gas”, News Locker, November 20, 2017

[16] “Reusing waste energy with 2-D electron gas”, telezkope, November 20, 2017

[17] “Reusing waste energy with 2-D electron gas”, Energy Daily, November 23, 2017

[18] “青色LED材料を活かして、熱を電気に変換”, J-Net 21, November 27, 2017

[1] The 71st CerSJ Awards for advancements in ceramic science and technology, Takayoshi Katase, “Development of functional thin film devices utilizing Redox of transition metal oxides”

[2] Award for Encouragement of Research in IUMRS-ICAM 2017, Anup V. Sanchela, “Thermopower modulation clarification of intrinsic carrier transport of novel transparent conducting oxide, BaSnO₃“, IUMRS-ICAM 2017 (The 15th International Conference on Advanced Materials), Yoshida Campus, Kyoto University, Kyoto, Japan, 27 Aug.-1 Sep. 2017 (Oral).

[1] Hiromichi Ohta, “The switch that could double USB memory”,  Spotlight on Research (2016-2017 Hokkaido University)17-18 (2017). PDF

[7] Ning Li, Takayoshi Katase, Yanbei Zhu, Takao Matsumoto, Tomonari Umemura, Yuichi Ikuhara, and Hiromichi Ohta, “Solid-liquid phase epitaxial growth of Li₄Ti₅O₁₂ thin film”, Appl. Phys. Express 9, 125501 (2016).(doi:10.7567/APEX.9.125501)

[6] Jiang Pu, Kaito Kanahashi, Nguyen Thanh Cuong, Chang-Hsiao Chen, Lain-Jong Li, Susumu Okada, Hiromichi Ohta, and Taishi Takenobu, “Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers”, Phys. Rev. B 94, 014312 (2016). (doi:10.1103/PhysRevB.94.014312).

[5] K. Yokoyama, S. Yokoyama, Y. Sato, K. Hirano, S. Hashiguchi, K. Motomiya, H. Ohta, H. Takahashi, K. Tohji, and Y. Sato, “Efficiency and long-term durability of nitrogen-doped single-walled carbon nanotube electrocatalyst synthesized by defluorination-assisted nanotube-substitution for oxygen reduction reaction”, J. Mater. Chem. A 4, 9184 (2016).(doi:10.1039/C6TA02722A)

[4] T. Katase, T. Onozato, M. Hirono, T. Mizuno, and H. Ohta, “A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry”, Sci. Rep. 6, 25819 (2016). (doi:10.1038/srep25819)

[3] T. Onozato, T. Katase, A. Yamamoto, S. Katayama, K. Matsushima, N. Itagaki, H. Yoshida, and H. Ohta, “Optoelectronic properties of valence-state-controlled amorphous niobium oxide”, J. Phys. Condens. Mater. 28, 255001 (2016).(doi:10.1088/0953-8984/28/25/255001)

[2] T. Katase, Y. Suzuki, and H. Ohta, “Reversibly switchable electromagnetic device with leakage-free electrolyte”, Adv. Electron. Mater. 2, 1600044 (2016). (2016.3.29 online).(doi:10.1002/aelm.201600044) (Cond-mat arXiv) (Press release) arXiv

[1] B. Feng, I. Sugiyama, H. Hojo, H. Ohta, N. Shibata, and Y. Ikuhara, “Atomic structures and oxygen dynamics of CeO₂ grain boundaries”, Sci. Rep. 6, 20288 (2016).(doi:10.1038/srep20288)

[1] Katase, K. Endo, and H. Ohta, “Electrolysis-induced protonation of VO₂ thin film transistor for the metal-insulator phase modulation”, Proc. SPIE 9749, Oxide-based Materials and Devices VII, 974916, 974916 (2016).(doi:10.1117/12.2222255)

[1] H. Ohta and T. Katase, “Electro-chemical redox switching of functional oxide thin films using water-infiltrated nanoporous glass”, International Workshop on Oxide Surfaces (IWOX-X), Dalian / Liaoyang, China, 10-15 January, 2016 (Invited)

[2] T. Katase and H. Ohta, “All-Solid-State Electro-Magnetic Phase Switching Device Operating at Room Temperature”, Energy Materials Nanotechnology (EMN) Meeting on Ceramics, Hong Kong, China, 25-28 January, 2016 (Invited)

[3] T. Katase and H. Ohta, “Reversible switching of optoelectric and electromagnetic properties of functional oxides using water-infiltrated glass”, Oxide-based Materials and Devices VII, San Francisco, USA, 13-18 February, 2016 (Invited)

[4] T. Katase and H. Ohta, “Electrochemically switchable electromagnetic device with water electrolysis”, Mini-workshop on oxides and related materials, Tohoku University, Sendai, Japan, 24-25 February, 2016 (Invited)

[5] T. Katase and H. Ohta, “Reversibly tunable opto-electronic and electro-magnetic device of transition metal oxides using water-infiltrated glass”, Seminar at Institute of Physics, Academia Sinica (hosted by Dr. Wei-Li Lee), Academia Sinica, Taiwan, 27 July, 2016 (Invited)

[6] T. Katase, Y. Suzuki, and H. Ohta, “Reversible switching from an insulator to a conducting magnet-New way toward high capacity memory device-“, International Research School: Electronic States and Phases Induced by Electric or Optical Impacts (IMPACT 2016), Cargese, France, 23 Aug.-2 Sep., 2016 (Invited)

[7] T. Katase and H. Ohta, “Optoelectronic and electromagnetic switching device with transition metal oxides using water-leakage-free electrolyte”, Seminar at Soochow University (hosted by Prof. Steffen Duhm), Suzhou, China, 10 October, 2016 (Invited)

[8] H. Ohta and W. S. Choi, “Unusually large thermopower of nanostructured oxides”, ENGE 2016 (International Conference on Electronic Materials and Nanotechnology for Green Environment), Ramada Plaza Jeju Hotel, Jeju, South Korea, Nov. 6-9, 2016 (Invited)

[1] Michihiko Yamanouchi, Tatsuro Oyamada, Takayoshi Katase, Hiromichi Ohta, “Current dependence of switching magnetic field in La_0.67Sr_0.33MnO₃/SrTiO₃“, HOKUDAI-NCTU International Joint Symposium on Nano, Opto and Bio Sciences, Hokkaido University, Sapporo, Japan, 4-5 Oct. 2016 (poster)

[2] Yuqiao Zhang, Takaki Onozato, Takayoshi Katase, Hiromichi Ohta, “Electron transport properties of SrTiO₃-SrNbO₃ full range solid solutions”, HOKUDAI-NCTU International Joint Symposium on Nano, Opto and Bio Sciences, Hokkaido University, Sapporo, Japan, 4-5 Oct. 2016 (poster)

[3] Takaki Onozato, Takayoshi Katase, Tetsuya Tohei, Yuichi Ikuhara, Hiromichi Ohta, “Anomalous thermopower of ultrathin LaTiO₃ epitaxial layers”, HOKUDAI-NCTU International Joint Symposium on Nano, Opto and Bio Sciences, Hokkaido University, Sapporo, Japan, 4-5 Oct. 2016 (poster)

[4] Yuki Suzuki, Takayoshi Katase, Hiromichi Ohta, “Leakage-free alkaline electrolyte: Amorphous NaTaO₃ nanopillar array”, HOKUDAI-NCTU International Joint Symposium on Nano, Opto and Bio Sciences, Hokkaido University, Sapporo, Japan, 4-5 Oct. 2016 (poster)

[5] Hiromichi Ohta, Shota Kaneki, Tamotsu Hashizume, “Verification of 2D enhanced thermopower theory by electric field thermopower modulation”, HOKUDAI-NCTU International Joint Symposium on Nano, Opto and Bio Sciences, Hokkaido University, Sapporo, Japan, 4-5 Oct. 2016 (poster)

[6] Y. Zhang, T. Onozato, T. Katase, and H. Ohta, “Thermoelectric properties of SrTiO₃-SrNbO₃ full range solid solutions”, International Workshop on Oxide Electronics 23, Nanjing International Conference Hotel, Nanjing, China, 12-14 Oct. 2016

[7] T. Onozato, T. Katase, T. Tohei, Y. Ikuhara, and H. Ohta, “Anomalous thermopower of ultrathin LaTiO₃ epitaxial layers”, International Workshop on Oxide Electronics 23, Nanjing International Conference Hotel, Nanjing, China, 12-14 Oct. 2016

[8] Y. Suzuki, T. Katase, and H. Ohta, “Leakage-free alkaline electrolyte: Amorphous NaTaO₃ nanopillar array”, International Workshop on Oxide Electronics 23, Nanjing International Conference Hotel, Nanjing, China, 12-14 Oct. 2016

[9] T. Katase, Y. Suzuki, and H. Ohta, “Reversible switching from an insulator to a conducting magnet – New way toward high capacity memory device-“, International Workshop on Oxide Electronics 23, Nanjing International Conference Hotel, Nanjing, China, 12-14 Oct. 2016 Best poster award

[10] M. Yamanouchi, T. Oyamada, T. Katase and H. Ohta, “Current-induced modulation of switching magnetic field in La_0.67Sr_0.33MnO₃/SrTiO₃ structures”, 61st Annual Conference on Magnetism and Magnetic Materials (2016 MMM Conference), New Orleans, USA, Oct. 31-Nov. 4, 2016

[11] T. Katase, T. Onozato, Y. Suzuki, K. Endo, M. Hirono, T. Mizuno, T. Tohei, Y. Ikuhara, and H. Ohta, “Water-gated thin film transistors on functional oxides – Toward multifunctional memory devices –”, 2016 MRS Fall Meeting & Exhibit, Boston, MA, USA, 27 Nov.-2 Dec. 2016

[12] K. Yokoyama, S. Yokoyama, Y. Sato, K. Hirano, S. Hashiguchi, K. Motomiya, H. Ohta, H. Takahashi, K. Tohji, and Y. Sato, “Oxygen reduction reaction of nitrogen-doped single-walled carbon nanotubes synthesized by defluorination”, 2016 MRS Fall Meeting & Exhibit, Boston, MA, USA, 27 Nov.-2 Dec. 2016

[13] M. Yamanouchi, T. Oyamada, T. Katase, and H. Ohta, “Current-induced effects on switching magnetic field in an oxide half-metal heterostructure”, Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-21, Hokkaido University, Sapporo, Japan, 12-13 Dec. 2016

[14] T. Onozato, T. Katase, M. Hirono, T. Mizuno, and H. Ohta, “Amorphous WO₃ electrochromic device with thin-film transistor electrode geometry”, The 17th RIES-Hokudai International Symposium 柔 [Ju], Chateraise Gateaux Kingdom Sapporo, Sapporo, Japan, 13-14 Dec. 2016 (poster) Poster Award

[15] K. Nakamura, T. Katase, T. Oshikiri, K. Ueno, H. Ohta, and H. Misawa, “Switchable photocurrent polarity of plasmonic photoelectric conversion by irradiation wavelengths”, The 17th RIES-Hokudai International Symposium 柔 [Ju], Chateraise Gateaux Kingdom Sapporo, Sapporo, Japan, 13-14 Dec. 2016 (poster)

[16] Y. Zhang, T. Katase, T. Onozato, B. Feng, H. Hayashi, T. Tohei, I. Tanaka, Y. Ikuhara, and H. Ohta, “Thermoelectric properties of SrTiO₃-SrNbO₃ full range solid solutions”, The 17th RIES-Hokudai International Symposium 柔 [Ju], Chateraise Gateaux Kingdom Sapporo, Sapporo, Japan, 13-14 Dec. 2016 (poster)

[17] A. V. Sanchela and H. Ohta, “Thermoelectric properties of Nb-doped BaSnO₃ thin film”, The 17th RIES-Hokudai International Symposium 柔 [Ju], Chateraise Gateaux Kingdom Sapporo, Sapporo, Japan, 13-14 Dec. 2016 (poster)

[18] Y. Suzuki, T. Katase, and H. Ohta, “Characterization of amorphous NaTaO₃ nanopillar array film”, The 17th RIES-Hokudai International Symposium 柔 [Ju], Chateraise Gateaux Kingdom Sapporo, Sapporo, Japan, 13-14 Dec. 2016 (poster)

[1] “The switch that could double USB memory”, Phys.org, 24 June, 2016

[2] “The switch that could double USB memory”, Science Daily, June 24, 2016

[3] “Magnetic switch holds promise for double capacity solid state storage”, gizmag, June 28, 2016

[4] “Magnetic switch holds promise for double capacity solid state storage”, truemag, 28 June, 2016

[5] “The switch that could double USB memory”, new electronics, 1 July, 2016

[6] “Switching States To Deliver Double USB Memory”, Crazy Engineers, July 2, 2016

[7] “The switch that could double USB memory”, News Dog, July 2, 2016

[8] “A New Method to Double USB Memory”, Iscanews, July 2, 2016

[9] “The Switch That Could Double USB Memory”, Science Newsline Technology, 2 July, 2016

[10] “The Switch That Could Double USB Memory”, Technobahn, 2 July, 2016

[11] “The switch that could double USB memory”, RtoZ.org, July 3, 2016 Youtube

[12] “The switch that could double USB memory”, Space Daily, 6 July 2016

[13] “Hitting The Magnetic Switches”, Tom’s Hardware, July 9, 2016

[14] “New Device Could Double USB Storage Capacity”, Electronics 360, 11 July, 2016

[15] “磁電雙穩態材料倍增儲存容量”, EET Taiwan, 12 July, 2016

[15] “Double memory storage with magnetic and electric signals”, COSMOS Magazine, 12 July, 2016

[1] United States Patent US2015/0148218 A1, “Strontium Cobaltite Oxygen Sponge Catalyst and Methods of USE”, Published May 28, 2015, HoNyung Lee (Oak Ridge, US), Hyoungjeen Jeen (Knoxville, KR), Woo Seok Choi (Suwon, KR), Michael Biegalski (Oak Ridge, US), Chad M. Folkman (San Jose, US), I-Cheng Tung (Chicago, US), Dillon D. Fong (Elmhurst, US), John W. Freeland (Oak Park, US), Dongwon Shin (Knoxville, KR), Hiromichi Ohta (Kita, JP), Matthew F. Chisholm (Oak Ridge, US)

[1] Best poster award, T. Katase, Y. Suzuki, and H. Ohta, “Reversible switching from an insulator to a conducting magnet – New way toward high capacity memory device-“, International Workshop on Oxide Electronics 23, Nanjing International Conference Hotel, Nanjing, China, 12-14 Oct. 2016 (poster)

[2] Poster Award, T. Onozato, T. Katase, M. Hirono, T. Mizuno, and H. Ohta, “Amorphous WO₃ electrochromic device with thin-film transistor electrode geometry”, The 17th RIES-Hokudai International Symposium [Ju], Chateraise Gateaux Kingdom Sapporo, Sapporo, Japan, 13-14 Dec. 2016

[6] T. Katase, H. Takahashi, T. Tohei, Y. Suzuki, M. Yamanouchi, Y. Ikuhara, I. Terasaki, and H. Ohta, “Solid-phase epitaxial growth of A-site-ordered perovskite Sr_4-xEr_xCo₄O_12-d: A room temperature ferrimagnetic p-type semiconductor”, Adv. Electron. Mater. 1, 1500199 (2015).(DOI: 10.1002/aelm.201500199)

[5] K. Yokoyama, Y. Sato, K. Hirano, H. Ohta, M. Kenichi, K. Tohji, Y. Sato, “Defluorination-assisted nanotube-substitution reaction with ammonia gas for synthesis of nitrogen-doped single-walled carbon nanotubes”, Carbon 94, 1052-1060 (2015).(DOI:10.1016/j.carbon.2015.07.090)

[4] T. Katase, K. Endo, and H. Ohta, “Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion”, Phys. Rev. B 92, 035302 (2015).(DOI: 10.1103/PhysRevB.92.035302) arXiv

[3] T. Katase, K. Endo, T. Tohei, Y. Ikuhara, and H. Ohta, “Room-temperature-protonation-driven on-demand metal-insulator conversion of a transition metal oxide”, Adv. Electron. Mater. 1, 1500063 (2015).(DOI: 10.1002/aelm.201500063)

[2] T. Katase, K. Endo, and H. Ohta, “Characterization of electronic structure around metal-insulator transition in V_1-xW_xO₂ thin films by thermopower measurement”, J. Ceram. Soc. Jpn. 123, 307-311 (2015).(DOI: 10.2109/jcersj2.123.P5-1)

[1] W. S. Choi, H. K. Yoo, and H. Ohta, “Polaron transport and thermoelectric behavior in La-doped SrTiO₃ thin films with elemental vacancies”, Adv. Funct. Mater. 25, 799-804 (2015).(DOI: 10.1002/adfm.201403023)

[1] I. Terasaki, R. Okazaki, and H. Ohta, “Search for non-equilibrium thermoelectrics”, Scripta Materialia 111, 23–28 (2016). (DOI:10.1016/j.scriptamat.2015.04.033)

[1] H. Ohta, “Thermopower enhancement of two-dimensional electron gas in oxide semiconductors”, The American Ceramic Society’s Electronic Materials and Applications 2015 (EMA2015), Orlando, Florida USA, 21-23 January, 2015 (Invited)

[2] H. Ohta, “Thermoelectric effect of extremely thin electron doped SrTiO₃“, The 1st IOP-RIES Joint Workshop, Hokkaido Univ.,23 March, 2015 (Invited)

[3] T. Katase, H. Ohta, “Electro-magnetic properties control of functional oxides by pseudo solid-state electrochemistry”, 2015 EMN Qingdao Meeting, Qingdao, China, 14-17 June, 2015 (Invited)

[4] H. Ohta, “Two-dimensional giant thermopower –SrTiO₃-based superlattices and transistors-“, The American Ceramic Society’s 11th International Conference on Ceramic Materials and Components for Energy and Environmental Applications (CMCEE-11), Vancouver, Canada, 14-19 June, 2015 (Invited)

[5] H. Ohta, “Development of oxide-based nanostructured thermoelectric materials”, 4th International Symposium on Energy Challenges and Mechanics -working on small scales”, Scotland, UK, 11-13 August, 2015 (Invited, Keynote)

[6] Hiromichi Ohta, “Epitaxial film growth and characterization of functional oxides”, Seminar talk (60 min), National Chiao Tung University, Taiwan, 1 October, 2015 (Invited)

[7] H. Ohta,T. Katase, “Water electrolysis induced modification of functional oxides−Thermoelectric properties−”, IUMRS-ICAM 2015, Jeju island, Korea, 25-29 October, 2015 (Invited)

[1] Kaito Kanahashi, Jiang Pu, Nguyen Thanh Cuoug, Lain-Jong Li, Susumu Okada, Hiromichi Ohta, Taishi Takenobu, “Thermoelectric properties of CVD-grown transition metal dichalcogenide monolayers”, NT15 The Sixteenth International Conference on the Science and Application of Nanotubes, Nagoya University, Nagoya, Japan, 29 June-3 July, 2015 (poster)

[2] Ya-Nan Wu, Misako Hirono, Takayoshi Katase, Hiromichi Ohta, and Juhn-Jong Lin, “Thermoelectric and transport properties of epitaxial ITO and In₂O₃ films”, Workshop on Renewable Energies – Thermoelectrics and Photovoltaics -, Academia Sinica, Taipei, Taiwan,27-28 August, 2015 (poster)

[3] T. Katase, Y. Suzuki, H. Ohta, “Room-temperature-operatable electro-magnetic phase switching device”, Workshop on Oxide Electronics 22, College de France, Paris, 7-9 October, 2015 (oral)

[4] T. Katase, Y. Suzuki, and H. Ohta, “All-solid-state non-volatile electro-magnetic phase switching device”, STAC-9 & TOEO-9, Epocal Rsukuba, Ibaraki, Japan, 19-21 October, 2015 (oral)

[5] M. Yamanouchi, A. Sakagami, K. Takoshima, N. Kumashiro, T. Katase, and H. Ohta, “Domain wall motion devices using ferromagnetic oxides”, 2015 CRL Forum International, Tokyo Institute Technology,Tokyo,19-20 Ocotber, 2015 (poster)

[6] S. Katayama, T. Katase, and H. Ohta, “Reactive solid-phase epitaxial growth of layered alkali transition metal oxide, Na_xMnO₂“, THE 16th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “術” [JUTSU] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 10-11 November, 2015 (poster)

[7] Y. Suzuki, T. Katase, and H. Ohta, “All-solid-state non-volatile electromagnetic phase switching device”, THE 16th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “術” [JUTSU] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 10-11 November, 2015 (poster) Poster Award

[8] T. Onozato, T. Katase, S. Katayama, and H. Ohta, “Opto-electronic properties of amorphous NbO_x thin films”, THE 16th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “術” [JUTSU] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 10-11 November, 2015 (poster)

[9] M. Hirono, T. Katase, H. Ohta, “A transparent electro-chromic transistor”, PACIFICHEM2015 (The International Chemical Congress of Pacific Basin Societies 2015), Honolulu, Hawaii, 15-20 December, 2015 (oral)

[10] T. Katase, Y. Suzuki, H. Ohta, “Electrically controlled electro-magnetic phase conversion in magnetic oxide at room temperature”, PACIFICHEM2015 (The International Chemical Congress of Pacific Basin Societies 2015), Honolulu, Hawaii, 15-20 December, 2015 (oral)

[11] K. Nakamura, T. Katasei, T. Oshikiri, K. Ueno, H. Ohta, and H. Misawa, “Fabrication of thin film plasmonic solar cell using controlled nano structure”, PACIFICHEM2015 (The International Chemical Congress of Pacific Basin Societies 2015), Honolulu, Hawaii,15-20 December, 2015 (Poster)

[1] THE 16th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM [JUTSU] Poster Award, Y. Suzuki, T. Katase, and H. Ohta, “All-solid-state non-volatile electromagnetic phase switching device”, THE 16th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM [JUTSU] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 10-11 Nov. 2015

[1] Organizer, THE 16th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “術” [JUTSU] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 10-11 November, 2015

[2] T. Katase, K. Endo, and H. Ohta, “Thermopower analysis of the electronic structure around metal-insulator transition in V_1-xW_xO₂“, Phys. Rev. B 90, 161105(R) (2014). (arXiv) (DOI: 10.1103/PhysRevB.90.161105)  arXiv

[1] W. S. Choi, H. Ohta, H. N. Lee, “Thermopower Enhancement by Fractional Layer Control in 2D Oxide Superlattices”, Adv. Mater. 26, 6701-6705 (2014). (DOI: 10.1002/adma.201401676) Inside Back Cover  arXiv

[1] T. Katase, K. Endo, and H. Ohta, “Metal-insulator transition and thermopower modulation of VO₂ thin film by electric-field induced hydrogenation “, Oxide Thin Films for Advanced Energy and Information Applications; Materials Chemistry of Thin Film Oxides, Chicago, USA, July 13-16, 2014

[2] M. Yamanouchi, “Current-induced domain wall motion for spintronics devices”, The 1st Korea-Japan Bilateral Workshop on Functional Materials Science -Thermoelectrics, Spintronics, Low-dimensional Materials, and Soft Matter-, Sapporo, Japan, August 1, 2014

[3] H. Ohta, “Epitaxial Film Growth and Application of Functional Oxides”, HOKUDAI-NCTU Joint Symposium on Nano, Photo and Bio Sciences, RIES, Hokkaido University, Japan, 10-11 September 2014

[1] T.Katase, K. Endo, and H. Ohta, “Electric-field induced hydrogenation of VO₂ thin films; toward the modulation of metal-insulator transition and thermopower”, The 8th International Conference on the Science and Technology for Advanced Ceramics (STAC-8), Kanagawa, Japan, June 25-27, 2014

[2] K. Endo, T. Katase, and H. Ohta, “Electric-field induced hydrogenation of VO₂ thin film transistor for modulation of metal-insulator phase transition” (Poster), The 1st Korea-Japan Bilateral Workshop on Functional Materials Science -Thermoelectrics, Spintronics, Low-dimensional Materials, and Soft Matter-, Sapporo, Japan, August 1, 2014

[3] T. Katase, Y. Suzuki, M. Yamanouchi, H. Takahashi, R. Okazaki, I. Terasaki, and H. Ohta, “Epitaxial film growth of ferromagnetic semiconductor Sr_4-xA_xCo₄O_10+δ (A = Y, Er) by pulsed laser deposition” (Poster), The 1st Korea-Japan Bilateral Workshop on Functional Materials Science -Thermoelectrics, Spintronics, Low-dimensional Materials, and Soft Matter-, Sapporo, Japan, August 1, 2014

[4] T. Katase, K. Endo, and H. Ohta, “Field-induced hydrogenation of VO₂ thin film transistor for modulation of metal-insulator transition and thermopower”, 21st International Workshop on Oxide Electronics (WOE21), The Sagamore Resort, NY, USA,September 28 – October 1, 2014 (Poster)

[5] K. Endo, T. Katase, and H. Ohta, “AFM lithography using water infiltrated nanoporous glass”, THE 15th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “響” [Hibiki] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 16-17 December, 2014 (poster)

[6] T. Katase, Y. Suzuki, M. Yamanouchi, H. Takahashi, R. Okazaki, I. Terasaki, and H. Ohta, “Epitaxial film growth of room temperature ferromagnetic semiconductor Sr_4-xEr_xCo₄O_10+d with A-site ordered structure”, THE 15th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “響” [Hibiki] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 16-17 December, 2014 (poster)

[7] M. Yamanouchi, A. Sakagami, T. Katase, and H. Ohta, “Domain wall motion in ferromagnetic oxide La_0.67Sr_0.33MnO₃“, THE 15th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “響” [Hibiki] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 16-17 December, 2014 (poster)

[1] H. Ohta, S-W. Kim, M. Yamanouchi, T. Katase, Organizer, The 1st Korea-Japan Bilateral Workshop on Functional Materials Science -Thermoelectrics, Spintronics, Low-dimensional Materials, and Soft Matter-, Sapporo, Japan, August 1, 2014

[2] H. Jeen,W-S. Choi, M. D. Biegalski, C. M. Folkman, I-C. Tung, D. D. Fong, J. W. Freeland, D. Shin, H. Ohta, M. F. Chisholm and H-N. Lee, “Reversible redox reactions in an epitaxially stabilized SrCoO_x oxygen sponge”, Nat. Mater. 12, 1057 (2013). (DOI:10.1038/nmat3736)  arXiv

[1] H. Jeen, W. S. Choi, J. W. Freeland, H. Ohta, C. U. Jung, H. N. Lee, “Topotactic Phase Transformation of the Brownmillerite SrCoO_2.5 to the Perovskite SrCoO_3–δ“, Adv. Mater. 25, 3651-3656 (2013). (DOI: 10.1002/adma.201300531)  arXiv

[1] H. Ohta, “Electric-field thermopower modulation in SrTiO₃-based field-effect transistors”, J. Mater. Sci. 48, 2797 (2013). (DOI 10.1007/s10853-012-6856-6)

[1] H. Ohta, “Electric Field Modulation of a Thermoelectric Material”, Thermec 2013, Las Vegas, USA, 2013.12.2-6

[1] Ning Li, Takayoshi Katase, Yanbei Zhu, Tomonari Umemura, Takao Matsumoto, Yuichi Ikuhara and Hiromichi Ohta, “Solid-Liquid Phase Epitaxy of Li₄Ti₅O₁₂ Thin Film”, 10th Thin Film Materials & Devices Meeting, Kyoto, Japan, Oct. 31 – Nov. 2, 2013 (in Japanese) (Proceeding) (Poster)

[2] Ning Li, Takayoshi Katase, Yanbei Zhu, Tomonari Umemura, Takao Matsumoto, Yuichi Ikuhara and Hiromichi Ohta, “Solid-Liquid Phase Epitaxy”, THE 14th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM “網” [mou] , Gateaux Kingdom SAPPORO, Sapporo, Japan, 2013.12.11-12 (Poster)

[1] H. Ohta, 2013 MRS Spring Meeting Organizer (Symposium XX: Epitaxial Oxide Thin Films and Heterostructures for Advanced Information and Energy Technologies), with Dr. Gervasi Herranz (ICMAB-CSIC), Dr. Ho-Nyung Lee (Oak Ridge National Laboratory), and Dr. Jens Kreisel (Centre de Recherche Gabriel Lippmann)

[4] [Retracted] H. Ohta, T. Mizoguchi, N. Aoki, T. Yamamoto, A. Sabarudin, and T. Umemura, “Lithium-ion conducting La_2/3–xLi_3xTiO₃ solid electrolyte thin films with stepped and terraced surfaces”, Appl. Phys. Lett. 100, 173107 (2012). (DOI:10.1063/1.4709402) Retraction (DOI:10.1063/1.4794148)

[3] B. Feng, H. Hojo, T. Mizoguchi, H. Ohta, S. D. Findlay, Y. Sato, N. Shibata, T. Yamamoto, and Y. Ikuhara, “Atomic structure of a sigma3 [110]/(111) grain boundary in CeO₂“, Appl. Phys. Lett. 100, 073109 (2012).(DOI:10.1063/1.3682310)

[2] S. Zheng, C. A. J. Fisher, T. Kato, Y. Nagao, H. Ohta, and Y. Ikuhara, “Domain formation in anatase TiO₂ thin films on LaAlO₃ substrates”, Appl. Phys. Lett. 101, 191602 (2012).(DOI:10.1063/1.4766338)

[1] H. Ohta, T. Mizuno, S. Zheng, T. Kato, Y. Ikuhara, K. Abe, H. Kumomi, K. Nomura, and H. Hosono, “Unusually large enhancement of thermopower in an electric field induced two-dimensional electron gas”, Adv. Mater. 24, 740-744 (2012). (DOI: 10.1002/adma.201103809) (arXiv:1112.2030) Highlighted in Advanced Materials (7 Feb. 2012 issue)

[1] H. Ohta and K. Koumoto, Chapter 10 “Thermoelectric oxides: films and heterostructures”, Multifunctional Oxide Heterostructures, (Eds.) E. Y. Tsymbal, E. R. A. Dagotto, C-B. Eom, and R. Ramesh, Oxford (2012).

[1] H. Ohta, “Two dimensional thermoelectric effect”, Distinguished Lecture Series for 2012 fall semester in Sungkyunkwan University, Korea, 12 December 2012

[2] H. Ohta, “Electric field thermopower modulation of 2DEG in oxide semiconductor based field effect transistors”, MRS 2012 Fall Meeting, Boston, MA, 26-30 November 2012

[3] H. Ohta, “Unusually large thermopower enhancement in an electric field induced two-dimensional electron gas”, E-MRS 2012 Spring Meeting, Strasbourg, France, 14-18 May 2012

[4] H. Ohta, “Electric-Field Thermopower Modulation Method”, Japan-Finland March Meeting for the future in thermoelectrics, Nagoya University, 13-14 March 2012

[1] Hiromichi Ohta, Teruyasu Mizuguchi, Noriyuki Aoki, Takashi Yamamoto, Akhmad Sabarudin, Tomonari Umemura: “Single crystalline thin films of lithium-ion conducting La_2/3-xLi_3xTiO₃ solid electrolyte: A solution towards interfacial lithium-ion conductivity”, MRS 2012 Fall Meeting, Boston (USA), 26-30 November 2012

[2] H. Ohta, “Electric Field Thermopower Modulation Method”, THE 13th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM, Gateaux Kingdom SAPPORO, Sapporo、13-14 December 2012 (poster)

[3] Noriyuki Aoki and Hiromichi Ohta: “Fabrication of atomically flat lithium-ion conducting La_2/3-xLi_3xTiO₃ solid electrolyte”, THE 13th RIES-HOKUDAI INTERNATIONAL SYMPOSIUM, Gateaux Kingdom SAPPORO, Sapporo、13-14 December 2012 (poster)

1. M. Seki, H. Tabata, H. Ohta, K. Inaba, and S. Kobayashi, “Epitaxial thin films of p-type spinel ferrite grown by pulsed laser deposition”, Appl. Phys. Lett. 99, 242504 (2011).
2. T. Mizuno, Y. Nagao, A. Yoshikawa, K. Koumoto, T. Kato, Y. Ikuhara, and H. Ohta, “Electric field thermopower modulation analysis of an interfacial conducting layer formed between Y₂O₃ and rutile TiO₂”, J. Appl. Phys. 110, 063719 (2011).
3. H. Hojo, E. Tochigi, T. Mizoguchi, H. Ohta, N. Shibata, B. Feng, and Y. Ikuhara, Atomic structure and strain field of threading dislocations in CeO₂ thin films on yttria-stabilized ZrO₂, Appl. Phys. Lett. 98, 153104 (2011).
4. T. Mizoguchi, H. Ohta, H-S. Lee, N. Takahashi, and Y. Ikuhara, “Controlling interface intermixing and properties of SrTiO₃-based superlattices”, Adv. Funct. Mater. 21, 2258–2263 (2011).
5. Y. Kozuka, M. Kim, H. Ohta, Y. Hikita, C. Bell, and H. Y. Hwang, “Enhancing the electron mobility via delta-doping in SrTiO₃”, Appl. Phys. Lett. 97, 222115 (2010).
6. H. Hojo, T. Mizoguchi, H. Ohta, S. D. Findlay, N. Shibata, T. Yamamoto, and Y. Ikuhara, “Atomic Structure of a CeO₂ Grain Boundary: The Role of Oxygen Vacancies”, Nano Lett. 10, 4668–4672 (2010).
7. H. Ohta, Y. Sato, T. Kato, S-W. Kim, K. Nomura, Y. Ikuhara and H. Hosono, “Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal”, Nat. Commun. 1, 118 (2010).
8. H. Koide, Y. Nagao, K. Koumoto, Y. Takasaki, T. Umemura, T. Kato, Y. Ikuhara, and H. Ohta, “Electric field modulation of thermopower for transparent amorphous oxide thin film transistors”, Appl. Phys. Lett. 97, 182105 (2010).
9. Y. Nagao, A. Yoshikawa, K. Koumoto, T. Kato, Y. Ikuhara, and H. Ohta, “Experimental characterization of the electronic structure of anatase TiO₂: Thermopower modulation”, Appl. Phys. Lett. 97, 172112 (2010).
10. Y. Ishida, A. Mizutani, K. Sugiura, H. Ohta, and K. Koumoto, “Metal-nonmetal transition in Li_xCoO₂thin films and thermopower enhancement at high Li concentration”, Phys. Rev. B 82, 075325 (2010).
11. W-S. Choi, H. Ohta, S-J. Moon, Y-S. Lee, and T-W. Noh, “Dimensional crossover of the polaron dynamics in thermoelectric Nb:SrTiO₃/SrTiO₃ superlattices: Possible mechanism of thermopower enhancement”, Phys. Rev. B 82, 024301 (2010).
12. K. Uchida, A. Yoshikawa, K. Koumoto, T. Kato, Y. Ikuhara, and H. Ohta, “A single crystalline strontium titanate thin film transistor”, J. Appl. Phys. 107, 096103 (2010).
13. T. Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of atomically flat ScAlMgO₄epitaxial buffer layer and low-temperature growth of high-mobility ZnO films”, Cryst. Growth Des. 10, 1084–1089 (2010).
14. A. Yoshikawa, K. Uchida, K. Koumoto, T. Kato, Y. Ikuhara, and H. Ohta, “Electric-Field Modulation of Thermopower for the KTaO₃ Field Effect Transistors”, Appl. Phys. Express 2, 121103 (2009).
15. H. Ohta, Y. Masuoka, R. Asahi, T. Kato, Y. Ikuhara, K. Nomura, and H. Hosono, “Field-modulated thermopower in a SrTiO₃-based field-effect transistor with amorphous 12CaO·7Al₂O₃glass gate insulator”, Appl. Phys. Lett. 95, 113505 (2009).
16. S-W. Kim, Y. Tarumi, H. Iwasaki, H. Ohta, M. Hirano, and H.Hosono, “Thermal conductivity and Seebeck coefficient of 12CaO·7Al₂O₃electride with a cage structure”, Phys. Rev. B 80, 075201 (2009).
17. T. Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Large domain growth of GaN epitaxial films on lattice-matched buffer layer ScAlMgO₄”, Mater. Sci. Eng. B 161, 66–70 (2009).
18. Y. Wang, K-H. Lee, H. Ohta, and K. Koumoto, “Thermoelectric properties of electron doped SrO(SrTiO₃)_n(n = 1, 2) ceramics”, J. Appl. Phys. 105, 103701 (2009).
19. K. Sugiura, H. Ohta, S. Nakagawa, R. Huang, Y. Ikuhara, K. Nomura, H. Hosono, and K. Koumoto, “Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy”, Appl. Phys. Lett. 94, 152105 (2009).
20. K. Sugiura, H. Ohta, Y. Ishida, R. Huang, T. Saito, Y. Ikuhara, K. Nomura, H. Hosono, and K. Koumoto, “Structural Transformation of Ca-Arrangements and Carrier Transport Properties in Ca_0.33CoO₂Epitaxial Films”, Appl. Phys. Express 2, 035503 (2009).
21. R. Huang, T. Mizoguchi, K. Sugiura, S. Nakagawa, H. Ohta, T. Saito, K. Koumoto, T. Hirayama, and Y. Ikuhara, “Microstructure evolution of Ca_0.33CoO₂thin films investigated by high-angle annular dark-field scanning transmission electron microscopy”, J. Mater. Res. 24, 279–287 (2009).
22. K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O₂annealing”, Appl. Phys. Lett. 93, 192107 (2008).
23. R. Huang, T. Mizoguchi, K. Sugiura, H. Ohta, K. Koumoto, T. Hirayama and Y. Ikuhara, “Direct observations of Ca ordering in Ca_0.33CoO₂thin films with different superstructures”, Appl. Phys. Lett. 93, 181907 (2008).
24. K. Nomura, T. Kamiya, H. Ohta, K. Shimizu, M. Hirano, and H. Hosono, “Relationship between non-localized tail states and carrier transport in amorphous oxide semiconductor, In-Ga-Zn-O”, Phys. Stat. Sol. (a) 205, 1910–1914 (2008).
25. H. Ohta, R. Huang, and Y. Ikuhara, “Large enhancement of the thermoelectric Seebeck coefficient for amorphous oxide semiconductor superlattices with extremely thin conductive layers”, Phys. Stat. Sol. (Rapid Research Letter) 2, 105–107 (2008).
26. Y. Ishida, R. Eguchi, M. Matsunami, K. Horiba, M. Taguchi, A. Chainani, Y. Senba, H. Ohashi, H. Ohta, and S. Shin, “Coherent and Incoherent States of Electron-doped SrTiO₃”, Phys. Rev. Lett. 100, 056401 (2008).
27. K-H. Lee, Y. Mune, H. Ohta, and K. Koumoto, “Thermal stability of giant thermoelectric Seebeck coefficient for SrTiO₃/SrTi_0.8Nb_0.2O₃superlattices at high temperature”, Appl. Phys. Express 1, 015007 (2008).
28. Y. Wang, K-H. Lee, H. Ohta, and K. Koumoto, “Fabrication and thermoelectric properties of heavily rare-earth metal-doped SrO(SrTiO₃)_n(n= 1, 2) ceramics”, Ceram. Int. 34, 849–852 (2008).
29. A. Mizutani, K. Sugiura, H. Ohta, and K. Koumoto, “Epitaxial film growth of Li_xCoO₂(0.6 < x < 0.9) via topotactic ion exchange of Na_0.8CoO₂”, Cryst. Growth Des. 8, 755–758 (2008).
30. K. Sugiura, H. Ohta, K. Nomura, T. Saito, Y. Ikuhara, M. Hirano, H. Hosono, and K. Koumoto, “Thermoelectric properties of the layered cobaltite Ca₃Co₄O₉epitaxial films fabricated by topotactic ion-exchange method”, Mater. Trans. 48, 2104–2107 (2007).
31. Y. Wang, K-H. Lee, H. Hyuga, H. Kita, K. Inaba, H. Ohta, and K. Koumoto, “Enhancement of Seebeck coefficient for SrO(SrTiO₃)₂by Sm-substitution: Crystal symmetry restoration of disordered TiO₆ octahedra”, Appl. Phys. Lett. 91, 242102 (2007).
32. K. Kato, M. Yamamoto, S. Ohta, H. Muta, K. Kurosaki, S. Yamanaka, H. Iwasaki, H. Ohta, and K. Koumoto, “The effect of Eu-substitution on thermoelectric properties of SrTi_0.8Nb_0.2O₃”, J. Appl. Phys. 102, 116107 (2007).
33. Y. Mune, H. Ohta, K. Koumoto, T. Mizoguchi, and Y. Ikuhara, “Enhanced Seebeck coefficient of quantum-confined electrons in SrTiO₃/SrTi_0.8Nb_0.2O₃superlattices”, Appl. Phys. Lett. 91, 192105 (2007).
34. Y. Ishida, H. Ohta, A. Fujimori, and H. Hosono, “Temperature dependence of the chemical potential in Na_xCoO₂: Implications for the large thermoelectric power”, J. Phys. Soc. Jpn. 76, 103709 (2007).
35. K-H. Lee, S-W. Kim, A. Ishizaki, H. Ohta, and K. Koumoto, “Preparation and thermoelectric properties of heavily Nb-doped SrO(SrTiO₃)₁epitaxial films”, J. Appl. Phys. 102, 033702 (2007).
36. H. Hiramatsu, K. Ueda, H. Ohta, M. Hirano, M. Kikuchi, H. Yanagi, T. Kamiya, and H. Hosono, “Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass”, Appl. Phys. Lett. 91, 012104 (2007).
37. K-H. Lee, S-W. Kim, H. Ohta, and K. Koumoto, “Thermoelectric properties of layered perovskite-type (Sr_1-xCa_x)(Ti_1-yNb_y)₂O₇”, J. Appl. Phys. 101, 083707 (2007).
38. M. Yamamoto, H. Ohta, and K. Koumoto, “Thermoelectric phase diagram in a CaTiO₃-SrTiO₃-BaTiO₃system”, Appl. Phys. Lett. 90, 072101 (2007).
39. K. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, “Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations”, Phys. Rev. B 75, 035212 (2007).
40. H. Ohta, S-W. Kim, Y. Mune, T. Mizoguchi, K. Nomura, S. Ohta, T. Nomura, Y. Nakanishi, Y. Ikuhara, M. Hirano, H. Hosono, and K. Koumoto, “Giant Thermoelectric Seebeck coefficient of a Two-dimensional Electron Gas in SrTiO₃”, Nat. Mater. 6, 129–134 (2007).
41. T. Kamiya, Y. Takeda, K. Nomura, H. Ohta, H. Yanagi, M. Hirano, and H. Hosono, “Self-adjusted, three-dimensional lattice-matched buffer layer for growing ZnO epitaxial film: homologous series layered oxide, InGaO₃(ZnO)₅”, Cryst. Growth Des. 6, 2451–2456 (2006).
42. D. Flahaut, T. Mihara, R. Funahashi, N. Nabeshima, K. Lee, H. Ohta, and K. Koumoto, “Thermoelectric properties of A-site substituted Ca_1-xRe_xMnO₃ system”, J. Appl. Phys. 100, 084911 (2006).
43. D. Kurita, S. Ohta, K. Sugiura, H. Ohta, and K. Koumoto, “Carrier generation and transport properties of heavily Nb-doped anatase TiO₂epitaxial films at high-temperatures”, J. Appl. Phys. 100, 096105 (2006).
44. K-H. Lee, H. Ohta, S-W. Kim, and K. Koumoto, “Ruddlesden-Popper phase as thermoelectric materials: Nb-doped SrO(SrTiO₃)_n(n=1, 2)”, J. Appl. Phys. 100, 063717 (2006).
45. Y. Ishida, H. Ohta, M. Hirano, A. Fujimori, and H. Hosono, “Potential profiling of the nanometer-scale charge depletion in n-ZnO/p-NiO junction using photoemission spectroscopy”, Appl. Phys. Lett. 89, 153502 (2006).
46. H. Hiramatsu, H. Kamioka, K. Ueda, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, “Opto-electronic properties and light-emitting device application of widegap layered oxychalcogenides: LaCuOCh(Ch = chalcogen) and La₂CdO₂Se”, Phys. Stat. Sol. (a) 203, 2800–2811 (2006).
47. K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Amorphous oxide semiconductors for high-performance flexible thin-film transistors”, Jpn. J. Appl. Phys. 45, 4303–4308 (2006).
48. K. Sugiura, H. Ohta, K. Nomura, M. Hirano, H. Hosono, and K. Koumoto, “High electrical conductivity of layered cobalt oxide Ca₃Co₄O₉epitaxial films grown by topotactic ion exchange method”, Appl. Phys. Lett. 89, 032111 (2006).
49. H. Ohta, A. Mizutani, K. Sugiura, M. Hirano, H. Hosono, and K. Koumoto, “Surface Modification of Glass Substrate for Oxide Heteroepitaxy: Pastable Three-dimensionally Oriented Layered Oxide Thin Film”, Adv. Mater. 18, 1649–1652 (2006).
50. K. Sugiura, H. Ohta, K. Nomura, M. Hirano, H. Hosono, and K. Koumoto, “Fabrication and thermoelectric properties of layered cobaltite, γ-Sr_0.32Na_0.21CoO₂epitaxial films”, Appl. Phys. Lett. 88, 082109 (2006).
51. K. Sugiura, H. Ohta, K. Nomura, H. Yanagi, M. Hirano, H. Hosono, and K. Koumoto, “Epitaxial film growth and superconducting behavior of sodium-cobalt oxyhydrate, Na_xCoO₂·yH₂O (x~0.3,y~1.3)”, Inorg. Chem. (communication) 45, 1894–1896 (2006).
52. S. Ohta, H. Ohta, and K. Koumoto, “Grain size dependence of thermoelectric performance of Nb-doped SrTiO₃polycrystals”, J. Ceram. Soc. Japan 114, 102–105 (2006).
53. H. Hiramatsu, K. Ueda, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, “Excitonic blue luminescence from p-LaCuOSe/n-InGaZn₅O₈ light-emitting diode at room temperature”, Appl. Phys. Lett. 87, 211107 (2005).
54. PX. Zhu, T. Takeuchi, H. Ohta, WS. Seo, and K. Koumoto, “Preparation and thermoelectric properties of Na_xCoO₂/Co₃O₄layered nano-composite”, Mater. Trans. 46, 1453–1455 (2005).
55. S. Ohta, T. Nomura, H. Ohta, M. Hirano, H. Hosono, and K. Koumoto, “Large thermoelectric performance of heavily Nb-doped SrTiO₃epitaxial film at high-temperature”, Appl. Phys. Lett. 87, 092108 (2005).
56. F. Oba, Y. Sato, T. Yamamoto, H. Ohta, H. Hosono, and Y. Ikuhara, “Effect of boundary plane on the atomic structure of [0001] Σ7 tilt grain boundaries in ZnO”, J. Mater. Sci. 40, 3067–3074 (2005).
57. T. Kamiya, S. Narushima, H. Mizoguchi, K. Shimizu, K. Ueda, H. Ohta, M. Hirano, and H. Hosono, “Electrical properties and structure of p-type amorphous oxide semiconductorxZnO·Rh₂O₃”, Adv. Funct. Mater. 15, 968–974 (2005).
58. S. Ohta, T. Nomura, H. Ohta, and K. Koumoto, “High-temperature carrier transport and thermoelectric properties of heavily La- or Nb-doped SrTiO₃single crystals”, J. Appl. Phys. 97, 034106 (2005).
59. T. Kambayashi, H. Ohta, H. Hoshi, M. Hirano, H. Hosono, T. Takezoe, and K. Ishikawa, “Epitaxial growth of a copper-phthalocyanine on a transparent conductive substrate with an atomically flat surface”, Cryst. Growth Des. 5, 143–146 (2005).
60. H. Ohta, S-W. Kim, S. Ohta, K. Koumoto, M. Hirano, and H. Hosono, “Reactive solid-phase epitaxial growth of Na_xCoO₂ (x ~0.83) via lateral diffusion of Na into a cobalt oxide epitaxial layer”, Cryst. Growth Des. 5, 25–28 (2005).
61. Y. Gao, Y. Masuda, WS. Seo, H. Ohta, and K. Koumoto, “TiO₂ nanoparticles prepared using an aqueous peroxotitanate solutions”, Ceram. Int. 30, 1365-1368 (2004).
62. Y. Gao, Y. Masuda, H. Ohta, and K. Koumoto, “Room temperature preparation of ZrO₂precursor thin film in an aqueous peroxozirconium-complex solution”, Chem. Mater. 16, 2615-2622 (2004).
63. H. Hiramatsu, K. Ueda, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Optical properties and two-dimensional electronic structure in wide-gap layered oxychalcogenide: La₂CdO₂Se₂”, J. Phys. Chem. B 108, 17344–17351 (2004).
64. F. Oba, H. Ohta, Y. Sato, H. Hosono, T. Yamamoto, and Y. Ikuhara, “Atomic structure of [0001]-tilt grain boundaries in ZnO: A high-resolution TEM study of fiber-textured thin films”, Phys. Rev. B 70, 125415 (2004).
65. T. Sasaki, K. Matsunaga, H. Ohta, H. Hosono, T. Yamamoto, and Y. Ikuhara, “Atomic and Electronic Structures of Ni/YSZ(111) Interface”, Mater. Trans. 45, 2137–2143 (2004).
66. H. Hiramatsu, K. Ueda, K. Takafuji, H. Ohta, M. Hirano, T. Kamiya, and H. Hosono, “Degenerate electrical conductive and excitonic photoluminescence properties of epitaxial films of wide gap p-type layered oxychalcogenides, LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se)”, Appl. Phys. A 79, 1521–1523 (2004).
67. T. Kamiya, H. Ohta, M. Kamiya, K. Nomura, K. Ueda, M. Hirano, and H. Hosono, “Li-doped NiO epitaxial thin film with atomically flat surface”, J. Mater. Res. 19, 913–920 (2004).
68. H. Hiramatsu, K. Ueda, K. Takafuji, H. Ohta, M. Hirano, T. Kamiya, and H. Hosono, “Heteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy”, Appl. Phys. A 79, 1517–1520 (2004).
69. H. Hiramatsu, K. Ueda, K. Takafuji, H. Ohta, M. Hirano, T. Kamiya, and H. Hosono, “Fabrication of heteroepitaxial thin films of layered oxychalcogenidesLnCuOCh (Ln=La–Nd; Ch=S–Te) by reactive solid-phase epitaxy”, J. Mater. Res. 19, 2137–2143 (2004).
70. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO₃(ZnO)₅films”, Appl. Phys. Lett. 85, 1993–1995 (2004).
71. K. Nomura, H. Ohta, A. Takagi, T, Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors”, Nature 432, 488–492 (2004).
72. T. Kamiya, H. Ohta, H. Hiramatsu, K. Hayashi, K. Nomura, S. Matsuishi, K. Ueda, M. Hirano, and H. Hosono, “Natural nanostructures in ionic semiconductors”, Microelectron. Eng. 73-74, 620–626 (2004).
73. K. Ueda, H. Hiramatsu, H. Ohta, M. Hirano, T. Kamiya, and H. Hosono, “Single-atomic-layered quantum wells built in wide-gap semiconductors LnCuOCh (Ln = lanthanide, Ch = chalcogen)”, Phys. Rev. B 69, 155305 (2004).
74. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Orita, M. Hirano, T. Suzuki, C. Honjyo, Y. Ikuhara, and H. Hosono, “Growth mechanism for single-crystalline thin film of InGaO₃(ZnO)₅ by reactive solid-phase epitaxy”, J. Appl. Phys. 95, 5532–5539 (2004).
75. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “All oxide transparent MISFET using high-k dielectrics gates”, Miroelectron. Eng. 72, 294–298 (2004).
76. H. Ohta, T. Kambayashi, K. Nomura, M. Hirano, K. Ishikawa, H. Takezoe, and H. Hosono, “Transparent organic thin-film transistor with a laterally grown non-planar phthalocyanine channel”, Adv. Mater. 16, 312–315 (2004).
77. H. Hiramatsu, H. Ohta, T. Suzuki, C. Honjyo, Y. Ikuhara, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Mechanism for heteroepitaxial growth of transparent P-type semiconductor: LaCuOS by reactive solid-phase epitaxy”, Cryst. Growth. Des. 4, 301–307 (2004).
78. H. Kamioka, H. Hiramatsu, H. Ohta, M. Hirano, K. Ueda, T. Kamiya, and H. Hosono, “Third-order optical nonlinearity originating from room-temperature exciton in layered compounds LaCuOS and LaCuOSe”, Appl. Phys. Lett. 84, 879–881 (2004).
79. T. Sasaki, K. Matsunaga, H. Ohta, H. Hosono, T. Yamamoto, and Y. Ikuhara, “Atomic and electronic structures of Cu/α-Al₂O₃interfaces prepared by pulsed-laser deposition”, Science and Technology of Advanced Materials 4, 575–584 (2003).
80. H. Hiramatsu, K. Ueda, K. Takafuji, H. Ohta, M. Hirano, T. Kamiya, and H. Hosono, “Intrinsic excitonic photoluminescence and band-gap engineering of wide-gap p-type oxychalcogenide epitaxial films ofLnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys”, J. Appl. Phys. 94, 5805–5808 (2003).
81. H. Hiramatsu, K. Ueda, K. Takafuji, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, “Electrical and optical properties and electronic structures ofLnCuOS (Ln = La similar to Nd)”, Chem. Mater. 15, 3692–3695 (2003).
82. S. Narushima, H. Mizoguchi, K. Simizu, K. Ueda, H. Ohta, M. Hirano, T. Kamiya, and H. Hosono, “A p-type amorphous oxide semiconductor and room temperature fabrication of amorphous oxide p-n heterojunction diodes”, Adv. Mater. 15, 1409–1413 (2003).
83. H. Ohta, M. Hirano, K. Nakahara, H. Maruta, T. Tanabe, M. Kamiya, T. Kamiya, and H. Hosono, “Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO”, Appl. Phys. Lett. 83, 1029–1031 (2003).
84. H. Ohta, T. Kambayashi, M. Hirano, H. Hoshi, K. Ishikawa, H. Takezoe, and H. Hosono, “Application of transparent conductive substrate with atomically flat & stepped surface for lateral growth of organic molecule: vanadyl-phthalocyanine”, Adv. Mater. 15, 1258–1262 (2003).
85. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Thin film transistor fabricated in single-crystalline transparent oxide semiconductor”, Science 300, 1269–1272 (2003).
86. H. Ohta, K. Nomura, M. Orita, M. Hirano, K. Ueda, T. Suzuki, Y. Ikuhara, and H. Hosono, “Single-crystalline films of InGaO₃(ZnO)_m(m=integer) homologous phase grown by reactive solid-phase epitaxy”, Adv. Funct. Mater. 13, 139–144 (2003).
87. H. Ohta, H. Mizoguchi, M. Hirano, S. Narushima, T. Kamiya, and H. Hosono, “Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh₂O₄/n-ZnO”, Appl. Phys. Lett. 82, 823–825 (2003).
88. H. Hiramatsu, K. Ueda, H. Ohta, M. Hirano, T. Kamiya, and Hideo Hosono, “Degenerate p-type conductivity in wide-gap LaCuOS_1-xSe_x (x=0~1) epitaxial films”, Appl. Phys. Lett. 82, 1048–1050 (2003).
89. H. Hiramatsu, H. Ohta, M. Hirano, and H. Hosono, “Heteroepitaxial growth of single-phase zinc blend ZnS film on transparent substrate by pulsed laser deposition under H₂S atmosphere”, Solid State Comm. 124, 411–415 (2002).
90. H. Ohta, M. Orita, M. Hirano, I. Yagi, K. Ueda, and H. Hosono, “Electronic structure and optical properties of p-type transparent oxide semiconductor; SrCu₂O₂”, J. Appl. Phys. 91, 3074–3078 (2002).
91. H. Ohta, M. Orita, M. Hirano, and H. Hosono, “Surface morphology and crystal quality of low resistive indium tin oxide grown on yttria-stabilized zirconia”, J. Appl. Phys. 91, 3547–3550 (2002).
92. M. Miyakawa, R. Noshiro, T. Ogawa, K. Ueda, H. Kawazoe, H. Ohta, M. Orita, M. Hirano, and H. Hosono, “Carrier doping into MgIn₂O₄epitaxial thin films by proton implantation”, J. Appl. Phys. 91, 2112–2117 (2002).
93. H. Hiramatsu, K. Ueda, H. Ohta, M. Orita, M. Hirano, and H. Hosono, “Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS”, Appl. Phys. Lett. 81, 598–600 (2002).
94. H. Hosono, H. Ohta, K. Hayashi, M. Orita, and M. Hirano, “Near UV-emitting diodes based on transparent P-N junction composed of heteroepitaxially grown p-SrCu₂O₂ and n-ZnO”, J. Crystal Growth 237-239, 496–502 (2002).
95. H. Yanagi, K. Ueda, H. Hosono, H. Ohta, M. Orita, and M. Hirano, “Fabrication of all oxide transparent p-n homojunction using bipolar CuInO₂”, Solid State Comm. 121, 15–17 (2002).
96. H. Ohta, M. Orita, M. Hirano, and H. Hosono, “Fabrication and characterization of ultraviolet-emitting diode composed of transparent p-n heterojunction, p-SrCu₂O₂ and n-ZnO”, J. Appl. Phys. 89, 5720–5725 (2001).
97. M. Orita, H. Ohta, M. Hirano, S. Narushima, and H. Hosono, “Amorphous transparent conductive oxide InGaO₃(ZnO)_m (m<4): a Zn 4s Conductor”, Phil. Mag. 81, 501–515 (2001).
98. K. Ueda, T. Hase, H. Ynagai, H. Kawazoe, H. Hosono, H. Ohta, M. Orita, and M. Hirano, “Epitaxial growth of transparent p-type conducting CuGaO₂ thin films on sapphire (001) substrates by pulsed laser deposition”, J. Appl. Phys. 89, 1790–1793 (2001).
99. M. Orita, H. Ohta, H. Hiramatsu, M. Hirano, S. Den, M. Sasaki, T. Katagiri, H. Minura, and H. Hosono, “Pulsed laser deposition system for producing oxide thin films at high temperature”, Rev. Sci. Inst. 72, 3340–3343 (2001).
100. H. Ohta, K. Kawamura, M. Orita, N. Sarukura, M. Hirano, and H. Hosono, “Current injection emission from a transparent p-n junction composed of p-SrCu₂O₂/n-ZnO”, Appl. Phys. Lett., 77, 475–477 (2000).
101. H. Ohta, K. Kawamura, M. Orita, N. Sarukura, M. Hirano, and H. Hosono, “UV-emitting diode composed of transparent oxide semiconductors: p-SrCu₂O₂/n-ZnO”, Electron. Lett. 36, 984–985 (2000).
102. H. Ohta, M. Orita, M. Hirano, H. Tanji, H. Kawazoe, and H. Hosono, “Highly electrically conductive indium-tin-oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition”, Appl. Phys. Lett. 76, 2740–2742 (2000).
103. M. Orita, H. Ohta, M. Hirano, and H. Hosono, “Deep-ultraviolet transparent conductive β-Ga₂O₃ thin films”, Appl. Phys. Lett. 77, 4166–4168 (2000).
104. Y. Michiue, F. Brown, N. Kimizuka, M. Onoda, M. Nakamura, M. Watanabe, M. Orita, and H. Ohta, “Crystal structure of InTi_0.75Fe_0.25Ti_0.67O3.375 and phase relations in the pseudobinary system InFeO₃-In₂Ti₂O₇ at 1300°C”, Chem. Mater. 12, 2244–2249 (2000).
105. Y. Michiue, F. Brown, N. Kimizuka, M. Watanabe, M. Orita, and H. Ohta, “Orthorhombic InFe_0.33Ti_0.67O_3.33”, Acta. Cryst. C 55, 1755–1757 (1999).
106. H. Hiramatsu, H. Ohta, W. S. Seo, and K. Koumoto, “Thermoelectirc properties of (ZnO)₅In₂O₃ thin films prepared by r.f. sputtering method”, J. Jpn. Soc. Powder and Powder Metal. 44, 44–49 (1997).
107. H. Ohta, W. S. Seo, and K. Koumoto, “Thermoelectirc properties of homologous compounds in the ZnO-In₂O₃ system”, J. Am. Ceram. Soc. 79, 2193–2196 (1996).

1. H. Ohta, K. Sugiura, and K. Koumoto, “Recent Progress in Oxide Thermoelectric Materials -p-type Ca₃Co₄O₉ and n-type SrTiO₃ –”, Inorg. Chem. 47, 8429–8436 (2008).
2. H. Ohta, “Two-dimensional thermoelectric Seebeck coefficient of the SrTiO₃ based superlattices”, phys. stat. sol. (b) 245, 2363–2368 (2008).
3. H. Ohta, “Thermoelectrics based on Strontium Titanate”, Mater. Today 10, 44–49 (2007).
4. H. Ohta, “Reactive Solid-Phase Epitaxy: A powerful method for epitaxial film growth of complex layered oxides”, J. Ceram. Soc. Jpn. 114, 147 (2006).
5. H. Ohta and H. Hosono, “Transparent Oxide Optoelectronics”, Mater. Today 7, 42–51 (2004).
6. H. Ohta, K. Nomura, H. Hiramatsu, T. Suzuki, K. Ueda, T. Kamiya, M. Hirano, Y. Ikuhara, and H. Hosono, “High-Quality Epitaxial Film Growth of Trasparent Oxide Semiconductors”, J. Ceram. Soc. Jpn. 112[S], S602–S609 (2004).
7. H. Ohta, M. Orita, M. Hirano, K. Ueda, and H. Hosono, “Epitaxial growth of transparent conductive oxides”, International Journal of Modern Physics B 16, 173–181 (2002).
8. H. Hosono, H. Ohta, M. Orita, K. Ueda, and M. Hirano, “Frontier of transparent conductive oxide thin films”, Vacuum 66, 419–425 (2002).
9. H. Ohta, K. Nomura, H. Hiramatsu, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Frontier of transparent oxide semiconductors”, Solid State Electron. 47, 2261–2267 (2003).

1. H. Ohtaand K. Koumoto, Chapter 10 Thermoelectric oxides: films and heterostructures,Multifunctional Oxide Heterostructures, (Eds.) E. Y. Tsymbal, E. R. A. Dagotto, C-B. Eom, and R. Ramesh, Oxford (2012).
2. H. Ohta, Chapter 14 Junctions,Handbook of Transparent Conductors, 1st Edition, (Eds.) D. S. Ginley, H. Hosono, and D. C. Paine, Springer-Verlag (2010).

1. H. Ohta, “Electric Field Modulation of Thermopower for SrTiO₃“, MRS 2010 spring meeting, San Francisco, CA, 4-9th April, 2010 Invited
2. H. Ohta, Kenji Sugiura, Kunihito Koumoto, Kenji Nomura, Hidenori Hiramatsu, Masahiro Hirano and Hideo Hosono, “Heteroepitaxy of Complex Oxides With Natural Superlattice Structure”, MRS 2010 spring meeting, San Francisco, CA, 4-9th April, 2010 Invited
3. H. Ohta, “Thermoelectric Seebeck effect of SrTiO₃ – Electron doped bulks, superlattices and field effect transistors”, The 16th Workshop on Oxide Electronics, Tarragona (Spain), 6th October, 2009 Invited
4. H. Ohta, Akira Yoshikawa, Daisuke Kurita, Kunihito Koumoto, Ryoji Asahi, Yumi Masuoka, Kenji Nomura, and Hideo Hosono, “Electric Field Induced Giant Thermopower of Two-dimensional Electron Gas at the Gate Insulator/SrTiO₃ Heterointerface”, 2009 MRS spring meeting, San Francisco, CA, 13-17th April, 2009 Invited
5. H. Ohta, “Thermoelectric Seebeck coefficient of two-dimensional electron layer in SrTiO₃ crystal”, Villa Conference on Complex Oxide Heterostructures, Orange Tree Villa, Clermont, FL, 2nd-6th November, 2008 Invited
6. H. Ohta, “Enhancement of thermoelectric performance using 2DEG”, Shandong University Seminar (organized by Prof. Wang Chunlei), Shandong University, 22nd October, 2008 Invited
7. K. Koumoto and H. Ohta, “SrTiO₃-based superlattices for thermoelectric energy conversion”, Materials Science & Technology 2008 Conference and Exhibition, David Lawrence Convention Center, Pittsburgh, Pennsylvania, 5-9th October, 2008 Invited
8. H. Ohta, “Giant Thermopower of Two Dimensionally Confined Electrons in Dielectric Oxides”, Nagoya Univ.-Tsinghua Univ.-Toyota Motor Corp. Joint Symposium, Nagoya Univ., 10-12th September, 2008 Invited
9. H. Ohta, “Two-dimensional thermoelectric Seebeck coefficient of electron doped SrTiO₃”, The 7th Korea-Japan Conference on Ferroelectricity, Jeju, South Korea, 6-9th August, 2008 Invited
10. H. Ohta, “Two-dimensional Seebeck Effect in SrTiO₃ Superlattices”, 7th Pacific Rim Conference on Ceramic and Glass Technology, Shanghai (China), 13th November, 2007 Invited
11. H. Ohta and K. Koumoto, “Development of thermoelectric oxide based on SrTiO₃”, 1st International Forum on Advanced Materials, Shanghai (China), 10th November, 2007 Invited
12. H. Ohta, T. Mizoguchi, Y. Mune, Y. Ikuhara, K. Koumoto, “Enhanced Seebeck coefficient of quantum confined electrons in the SrTiO₃/SrTi_0.8Nb_0.2O₃ superlattices”, The 7th France-Japan Workshop on Nanomaterials, Strasbourg (France), 24th October, 2007 Invited
13. H. Ohta, “Development of SrTiO₃-based thermoelectric thin film with two dimensional electrons”, The 14th International Workshop on Oxide Electronics, Jeju (South Korea), 8th October, 2007 Invited
14. H. Ohta, “Enhanced Seebeck coefficient of two-dimensionally confined electrons in a SrTiO₃ unit cell layer”, International Symposium on Nano-Thermoelectrics, Osaka （Japan）, 11-12th June, 2007 Invited
15. H. Ohta, “Giant thermoelectric response of two-dimensional electrons confined within a unit cell layer of SrTiO₃”, The 5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-5), Kanagawa, Japan, 21-22nd May, 2008 Invited
16. Hiromichi Ohta, SungWng Kim, Kenji Nomura, Shingo Ohta, Takashi Nomura, Masahiro Hirano, Hideo Hosono, and Kunihito Koumoto, “Giant Seebeck effect originating from 2DEG at the TiO₂/SrTiO₃ heterointerface”, the 2005 MRS Fall Meeting, Boston (USA), 27th November – 2nd December, 2005 Invited
17. H. Ohta, S. Ohta, and K. Koumoto, “Large Thermoelectric Response of Ti-containing Perovskite Oxides”, SSTE-1; a special symposium on the 4th China International Conference on High-Performance Ceramics, China, 23-26th October, 2005 Invited
18. Hiromichi Ohta, Kenji Nomura, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano and Hideo Hosono: Epitaxial Growth and Application of Transparent Oxide Semiconductors; 204th Meeting of the Electrochemical Society, Olando, USA, 12-16th October, 2003 Invited
19. Hiromichi Ohta, Kenji Nomura, Hidenori Hiramatsu, Toshiyuki Suzuki, Kazushige Ueda, Toshio Kamiya, Msahiro Hirano, Yuichi Ikuhara and Hideo Hosono: Single-crystalline film growth techniques of transparent oxide semiconductors; PacRim 2003, Nagoya, Japan, October, 2003 Invited
20. H. Ohta, H. Hiramatsu, M. Orita, M. Hirano, K. Nomura, K. Ueda, H. Hosono, T. Suzuki, Y. Ikuhara, “Reactive Solid-Phase Epitaxy – A magical way to fabricate single-crystalline thin films of complex oxides with superlattice structure”, 2002 MRS Fall Meeting, Boston, USA, 2-6 December, 2002 Invited
21. Ohta, H; Nomura, K.; Ueda, K.;Orita, M.; Hirano, M.; Hosono, H. Single crystal films of In₂O₃(ZnO)_m(m=integer) natural super lattice grown by novel solid-state diffusiontechnique. The International Conference On Metallurgical Coatings And ThinFilms ICMCTF 2002, San Diego, California, USA , 22-26th April, 2002 Invited
22. H. Ohta, M. Orita, M. Hirano, H. Hosono: Improvement of UV-light emission for P-N heterojunction LED composed of p-SrCu₂O₂ and n-ZnO; MRS 2001 spring meeting, San Francisco, California, USA, 16-20th April, 2001 Invited
23. H. Ohta, M. Orita, K. Ueda, M. Hirano, H. Hosono, “Epitaxial growth of transparent conductive oxides”, International Conference on Materials for Advanced Technologies ICMAT 2001 MRS-Singapore, Singapore, Singapore, 1-6th July, 2001 Invited

1. H. Ohta, Y. Mune, K. Koumoto, T. Mizoguchi, and Y. Ikuhara, “Critical thickness for giant thermoelectric Seebeck coefficient of 2DEG confined in SrTiO₃/SrTi_0.8Nb_0.2O₃ superlattices”, Thin Solid Films 516, 5916 (2008).
2. T, Katase, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Fabrication of ScAlMgO₄ epitaxial thin films using ScGaO₃(ZnO)_m buffer layers and its application to lattice-matched buffer layer for ZnO epitaxial growth”, Thin Solid Films 516, 5842 (2008).
3. Y. Mune, H. Ohta, T. Mizoguchi, Y. Ikuhara, and K. Koumoto, Mater. Res. Soc. Symp. Proc. 1044, U09-05 (2008).
4. Y. Nakanishi, H. Ohta, T. Mizoguchi, Y. Ikuhara, and K. Koumoto, Mater. Res. Soc. Symp. Proc. 1044, U09-06 (2008).
5. K. Sugiura, H. Ohta, and K. Koumoto, “Thermoelectric performance of epitaxial thin films of layered cobalt oxides grown by reactive solid-phase epitaxy with topotactic ion-exchange methods”, Int. J. Appl. Ceram. Technol. 4, 308 (2007).
6. K-H. Lee, Y-F. Wang, S-W. Kim, H. Ohta, and K. Koumoto, “Thermoelectric properties of Ruddlesden-Popper phase n-type semiconducting oxides: La-, Nd-, and Nb-doped Sr₃Ti₂O₇”, Int. J. Appl. Ceram. Technol. 4, 326 (2007).
7. Y. Ogo, K. Nomura, H. Yanagi, H. Ohta, T. Kamiya, M. Hirano, and H. Hosono, “Growth and structure of heteroepitaxial thin films of homologous compounds RAO₃(MO)_m by reactive solid-phase epitaxy: Applicability to a variety of materials and epitaxial template layers”, Thin Solid Films 496, 64 (2006).
8. Y. Takeda, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Growth of epitaxial ZnO films on lattice-matched buffer layer: Application of InGaO₃(ZnO)₆ single-crystalline thin film”, Thin Solid Films 486, 28 (2005).
9. A. Takagi, K. Nomura, H. Ohta, H. Tanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO₄”, Thin Solid Films 486, 38 (2005).
10. T. Kamiya, K. Ueda, H. Hiramatsu, H. Kamioka, H. Ohta, M. Hirano, and H. Hosono, “Two-dimensional electronic structure and multiple excitonic states in layered oxychalcogenide semiconductors, LaCuOCh (Ch = S, Se, Te): Optical properties and relativistic ab intio study”, Thin Solid Films 486, 98 (2005).
11. H. Hiramatsu, K. Ueda, H. Ohta, M. Hirano, T. Kamiya, and H. Hosono, “Wide gap p-type degenerate semiconductor: Mg-doped LaCuOSe”, Thin Solid Films 445, 304 (2003).
12. H. Ohta, M. Kamiya, T. kamiya, M. Hirano, and H. Hosono, “UV-detector based on pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO/n-ZnO”, Thin Solid Films 445, 317 (2003).
13. K. Nomura, H. Ohta, K. Ueda, T. Kamiy, M. Hirano, and H. Hosono, “Electron transport in InGaO₃(ZnO)_m (m=integer) studied using single-crystalline thin films and transparent MISFETs”, Thin Solid Films 445, 322 (2003).
14. H. Ohta, K. Nomura. H. Hiramatsu, T. Suzuki, K. Ueda, M. Orita, M. Hirano, Y. Ikuhara, and H. Hosono, Mater. Res. Soc. Symp. Proc. 747, 257 (2003).
15. H. Hiramatsu, K. Ueda, H. Ohta, M. Orita, M. Hirano, and H. Hosono, “Preparation of transparent p-type (La_1-xSr_xO)CuS thin films by an rf sputtering technique”, Thin Solid Films 411, 125 (2002).
16. K. Nomura, H. Ohta, K. Ueda, M. Orita, M. Hirano, and H. Hosono, “Novel film growth technique of single crystalline In₂O₃(ZnO)_m(m=integer) homologous compound”, Thin Solid Films 411, 147 (2002).
17. H. Ohta, M. Orita, M. Hirano and H. Hosono, Key Eng. Mater. 214-215, 75 (2002).
18. M. Orita, H. Hiramatsu, H. Ohta, M. Hirano, and H. Hosono, “Preparation of highly conductive deep ultraviolet transparent β-Ga₂O₃ thin film”, Thin Solid Films 411, 134 (2002).
19. H. Ohta, M. Orita, H. Hiramatsu, K. Nomura, M. Miyakawa, K. Ueda, M. Hirano, H. Hosono, Proceedings of CIMTEC 2002 10th International Ceramics Congress and 3rd Forum on New Materials, Ed. By P. Vincenzini Part D, 983 (2002).
20. H. Ohta, M. Orita, M. Hirano, H. Hosono, Mater. Res. Soc. Symp. Proc. 666, F3.15.1 (2001).
21. H. Ohta, M. Orita, M. Hirano, H. Hosono, H. Kawazoe and H. Tanji, Mater. Res. Soc. Symp. Proc. 623, 253 (2000).
22. H. Ohta, H. Tanji, M. Orita, H. Hosono and H. Kawazoe, Mater. Res. Soc. Symp. Proc. 570, 309 (1999).

1. PCT/JP2007/059766
   THERMOELECTRIC MATERIAL, INFRARED SENSOR AND IMAGE FORMING DEVICE
   Hiromichi OHTA, Kunihito KOUMOTO, Yoriko MUNE
2. PCT/JP2005/003273
   AMORPHOUS OXIDE AND THIN FILM TRANSISTOR
   Hideo HOSONO, Masahiro HIRANO, Hiromichi OTA, Toshio KAMIYA, Kenji NOMURA
3. PCT/JP2003/001756
   LnCuO(S, Se, Te) MONOCRYSTALLINE THIN FILM, ITS MANUFACTURING METHOD, AND OPTICAL DEVICE OR ELECTRONIC DEVICE USING THE MONOCRYSTALLINE THIN FILM
   Hideo HOSONO, Masahiro HIRANO, Hiromichi OTA, Masahiro ORITA, Hidenori HIRAMATSU, Kazushige UEDA
4. PCT/JP2002/011404
   NATURAL SUPERLATTICE HOMOLOGOUS SINGLE CRYSTAL THIN FILM, METHOD FOR PREPARATION THEREOF, AND DEVICE USING SAID SINGLE CRYSTAL THIN FILM
   Hideo HOSONO, Hiromichi OTA, Masahiro ORITA, Kazushige UEDA, Masahiro HIRANO, Toshio KAMIYA
5. PCT/JP2001/005928
   ULTRAVIOLET-TRANSPARENT CONDUCTIVE FILM AND PROCESS FOR PRODUCING THE SAME
   Hiromichi OTA, Masahiro HIRANO, Hideo HOSONO, Masahiro HIRANO
6. PCT/JP2001/000465
   LIGHT EMITTING DIODE AND SEMICONDUCTOR LASER
   Hideo HOSONO, Hiromichi OTA, Masahiro ORITA, Kenichi KAWAMURA, Nobuhiko SARUKURA, Masahiro HIRANO

1. 2007 MRS Fall Meeting Symposium U Poster Award, Yoriko Mune, Hiromichi Ohta, Teruyasu Mizoguchi, Yuichi Ikuhara, and Kunihito Koumoto, “Origin of Giant Seebeck Coefficient for High Density 2DEGs Confined in the SrTiO₃/SrTi_0.8Nb_0.2O₃ Superlattices”, 26-30 Nov. 2007
2. Best Oral Paper Award, 3rd International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-3), Hiromichi Ohta, Masao Kamiya, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, “UV-detector based on pn-heterojunction diode　composed of transparent oxide semiconductors, p-NiO/n-ZnO”, 10-11 April 2003